Massive Particle＇s Tunnelling from Black Hole with Topological Defect

We extend Zhang and Zhao＇s recent work to black hole with topological defect whose Arnowitt-Deser-Misner mass is no longer identical to its mass parameter. The behaviour of the tunnelling massive particles is investigated, and the emission rate at which massive particles tunnel across the event horizon of the black hole is calculated. The result is consistent with an underlying unitary theory, and takes the same functional form as that of mass-less particles.     

Tunnelling Effect of Massive Particles from Kerr Black Holes

In this paper, we extend Parikh’s (massless particles) and Zhang’ work to massive particles’ Kerr black hole tunnelling. By treating the massive particle as de Broglie wave, we calculate the emission rates of the particles across the event horizon of the Kerr black holes. Our result is successful and is in agreement with the form of the massless particles.     

Tunnelling Radiation of Charged and Magnetized Massive Particles from BTZ Black Holes

We investigate the tunnelling radiation of charged and magnetized massive particles from a Banados-Teitelboim- Zanelli （BTZ） black hole by extending the Parikh-Wilczek tunnelling framework. In order to calculate the emission rate, we reconstruct the electromagnetic field tensor and the Lagrangia~n of the field corresponding to the source with electric and magnetic charges, and treat the charges as an equivalent electric charge for simplicity in the later calculation. The result supports Parikh-Wilczek＇s conclusion, that is, the Hawking thermal radiation actually deviates from perfect thermality and agrees with an underlying unitary theory.     

Massive particles＇ tunnelling radiation from the black hole with a mass-quadruple moment

In this paper, we extend Zhang and Zhao's recent work to the black hole with a mass-quadruple moment. The behaviour of the tunnelling massive particles is investigated, and the emission rate at which massive particles tunnel across the event horizon of the black hole is calculated. The result is consistent with an underlying unitary theory, and takes the same functional form as that of a massless particle.     

From Schwarzschild to Kerr due to Black Hole Quantum Tunnelling

Hawking radiation can be viewed as a process of quantum tunnelling near black hole horizon. When a particle with angular momentum tunnels across the event horizon of Schwarzschild black hole, the black hole will change into a Kerr black hole. The emission rate of the massless particles with angular momentum is calculated, and the result is consistent with an underlying unitary theory.     

Nonlinear Landau--Zener Tunnelling with Two and Three-Body Interactions

We investigate the nonlinear Landau-Zener tunnelling of Bose-Einstein condensate （BEC） in an accelerating optical lattice with two- and three-body interactions between the particles. The influence of the three-body interaction on the eigenstates and the transition probability are discussed both anaJytically and numerically. The analytical eigenstates and the tunnelling probability are obtained, which are verified by numerical methods. It is shown that the eigenstates and the tunnelling probability are modified dramatically by three-body interaction.     

Tunnelling from black holes and tunnelling into white holes

Hawking radiation is nowadays being understood as tunnelling through black hole horizons. Here, the extension of the Hamilton–Jacobi approach to tunnelling for non-rotating and rotating black holes in different non-singular coordinate systems not only confirms this quantum emission from black holes but also reveals the new phenomenon of absorption into white holes by quantum mechanical tunnelling. The rôle of a boundary condition of total absorption or emission is also clarified.     

Thermal and field emission effects of laser radiation on metal whisker diodes: Application to infrared detection devices

In a series of recent experiments, research groups have made absolute frequency measurements with laser beams in the infrared region of the spectrum (λ ? 10 μm) using a metal point contact diode for generation, frequency mixing and detection. It has been postulated that the mechanism for the nonlinear current-voltage characteristic of the diode is tunnelling of electrons through an intermediate oxide film from the whisker into the metal base, i.e., the configuration is considered to be a metal-oxide-metal (MOM) tunnelling junction. Several features of the diode's operation create considerable doubt concerning the applicability of the MOM tunnelling mechanism. Analysis of the available experimental data led us to postulate an alternate solid state mechanism, namely a thermally enhanced field emission process. Such emission would be a consequence of the immersion of the whisker tip in the laser radiation resulting in (1) conduction heating which induces thermionic emission and (2) generation of an electric field at the tip necessary for electron tunnelling by field emission. In this paper we calculate rigorously the power absorbed in the metal whisker from the incident radiation. From the power absorbed, the heat conduction equation is solved for model geometries to obtain the laser induced temperature distribution at the whisker surface. Estimates of the electric field are obtained and combined with temperature calculations to obtain the nonlinear I–V characteristics of the thermally enhanced field emission model. Finally some simple experiments are proposed to test the thermal field emission hypothesis as a possible mechanism to explain the nonlinear characteristics of the metal whisker point contact diode.     

Hawking radiation via tunnelling from black holes with topological defects

In this paper, we extend Parikh's recent work to two kinds of the black holes whose ADM mass is no longer identical to its mass parameter, each with a topological defect, one being a global monopole black hole and another a cosmic string black hole. We view Hawking radiation as a tunnelling process across the event horizon and calculate the tunnelling probability. From the tunnelling probability we also find a leading correction to the semiclassical emission rate. The results are consistent with an underlying unitary theory.     

Tunnelling effect from a Vaidya--de Sitter black hole

In this paper, we extend Parikh' recent work to the Vaidya--de Sitter black hole which is non-stationary. We view Hawking radiation as a tunnelling process across the event horizon and calculate the tunnelling probability when the particle crosses the event horizon. From the tunnelling probability we also find a leading correction to the semiclassical emission rate.     

Studies of the tunnelling recombination between VK-Na° centre pairs in CsI:Na crystals

The tunnelling recombination of trapped holes (V_K) and electrons (Na°) pairs in CsI:Na crystals is studied by optical detection of ESR in the 420 nm emission. A model is developed and it explains the optically detected ESR spectra. The tunnelling probabilities are determined from the transient ODESR behavior.     

Effect of silver doping on the current–voltage characteristic of PbS nanorods

We report on field emission property from a single nanorod measured by using scanning tunnelling spectroscopy. It has been shown that field emission from nanorods of small band gap semiconductor is significantly increasing by doping. The current transport mechanism is explained using double barrier tunnel junction formalism. It is observed experimentally that the Fowler–Nordheim tunnelling mechanism is dominant and governs the transport mechanism. The transport properties of PbS nanostructures in the form of nanorod are investigated in terms of various conduction mechanism. The minimum voltage necessary for triggering Fowler–Nordheim tunnelling under the revised biased for intrinsic sample ~0.95 V and decreases to ~0.67 V for increase doping concentration up to 1.76 wt%.     

Atomic quantum diffusion,tunnelling states and some related phenomena in condensed systems

This article presents a review of some basic problems and results in the theory of atomic quantum diffusion, atomic tunnelling states and some related phenomena in condensed systems: crystals and amorphous materials.General concepts, including the defecton concept, are reviewed in the introduction. The first part of this paper considers the principal ideas, results and problems in the quantum diffusion theory for both underbarrier and overbarrier transitions of atomic particles in solids. Much attention is given to the fundamental role of the interactions between a weakly tunnelling particle and its environment, i.e. defects, other tunnelling particles and thermal fluctuations of atomic configurations.The second part of this review deals with the theory of atomic tunnelling states, their peculiar origin and low-temperature effects and, particularly, the origin and effects of the intrinsic atomic low-energy excitations in amorphous materials. The third part of this article discusses some related low-temperature phenomena. Some experimental data associated with the phenomena under consideration are presented. Finally, some actual problems of the theory are discussed in the Concluding Remarks.The review contains a discussion of results mainly coming to our attention by the summer of 1982.     

Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells

Temperature-dependent photoluminescence （PL） and time resolved photoluminescence （TRPL） are performed to study the PL characteristics and carrier transfer mechanism in asymmetric coupled InGaN/GaN multiple quantum wells （AS-QWs）. Our results reveal that abnormal carrier tunnelling from the wide quantum well （WQW） to the narrow quantum well （NQW） is observed at temperature higher than about lOOK, while a normal carrier tunnelling from the NQW to the WQW is observed at temperature lower than 100 K. The reversible carrier tunnelling between the two Q Ws makes it possible to explore new types of temperature sensitive emission devices. It is shown that PL internal quantum efficiency （IQE） of the NQW is enhanced to about 46% due to the assistant of the abnormal carrier tunnelling.     

Non-strictly black body spectrum from the tunnelling mechanism

The tunnelling mechanism is widely used to explain Hawking radiation. However, in many cases the analysis used to obtain the Hawking temperature only involves comparing the emission probability for an outgoing particle with the Boltzmann factor. Banerjee and Majhi improved this approach by explicitly finding a black body spectrum associated with black holes. Their result, obtained using a reformulation of the tunnelling mechanism, is in contrast to that of Parikh and Wilczek, who found an emission probability that is compatible with a non-strictly thermal spectrum. Using the recently identified effective state for a black hole, we solve this contradiction via a slight modification of the analysis by Banerjee and Majhi. The final result is a non-strictly black body spectrum from the tunnelling mechanism. We also show that for an effective temperature, we can express the corresponding effective metric using Hawking’s periodicity arguments. Potential important implications for the black hole information puzzle are discussed.     

Remarkable physicists: from Galileo to Yukawa

Electrical conduction in ultra-thin metal films is examined and the part played by an anomalous quantum mechanical tunnelling process is investigated. The process varies greatly with temperature, because the discrete metal particles forming the film are very small. The work required to remove a charge from such a particle being an inverse function of the particle size.

The nature of the conduction path between the metal particles is considered, and it is shown that conduction occurs through the substrate supporting the film. Experimental results for gold, platinum end chromium films on soda and alumino-borosilicate glasses are analysed in terms of a proposed model. The consistency of the values of the barrier heights between the metal particles and the glass substrate, supports the quantum mechanical tunnelling model.     

Black hole quantum tunnelling and black hole entropy correction

The Parikh–Wilczek tunnelling framework, which treats Hawking radiation as a tunnelling process, is investigated once more in this work. The first order correction, the log-corrected entropy-area relation, emerges naturally in the tunnelling picture if we consider the emission of a spherical shell. The second order correction to the emission rate for the Schwarzschild black hole is also calculated. At this level, the entropy of the black hole will contain three parts: the usual Bekenstein–Hawking entropy, a logarithmic term and an inverse area term. We find that the coefficient of the logarithmic term is −1. Thus, apart from a coefficient, our correction to the black hole entropy is consistent with that calculated in loop quantum gravity.     

Investigation of gate current in nano-scale MOSFETs by Monte Carlo solution of quantum Boltzmann equation

This paper investigates gate current through ultra-thin gate oxide of nano-scale metal oxide semiconductor field effect transistors (MOSFETs), using two-dimensional (2D) full-band self-consistent ensemble Monte Carlo method based on solving quantum Boltzmann equation. Direct tunnelling, Fowler--Nordheim tunnelling and thermionic emission currents have been taken into account for the calculation of total gate current. The 2D effect on the gate current is investigated by including the details of the energy distribution for electron tunnelling through the barrier. In order to investigate the properties of nano scale MOSFETs, it is necessary to simulate gate tunnelling current in 2D including non-equilibrium transport.     

The role of sequential tunnelling in the dark current of quantum well infrared photodetectors (QWIPs)

A quantum mechanical approach is taken to investigate the contribution of sequential tunnelling as a component of the dark current in quantum well infrared photodetectors (QWIPs). Calculations are performed on three different experimentally reported QWIP devices made for different detection wavelengths. The results show that the sequential tunnelling component remains rather constant with different devices, however it is swamped by the thermionic emission components of the dark current at longer wavelengths. The lack of a local maximum in the dark current due to resonant LO phonon emission, which should be observed at short wavelengths, suggests that interface roughness and alloy disorder could be destroying the coherence of the electron wavefunctions between quantum wells.     

A study of the dark currents of InSb charge injection devices

The dark currents of InSb metal-insulator-semiconductor (MIS) charge injection devices (CIDs) in the temperature range 30 to 120K are studied. It is found that a thermal-generating process dominates the dark current in the high temperature region. When the device is under small bias voltage, a bump in the trap emission current appears below 70K. This current is due to carrier capture and emission processes of a hole trap state located in the bulk material, and the measured activation energy is 50meV. For larger bias conditions, the band-to-band tunnelling current gradually overcomes the trap emission current. It smears out the bump in the trap emission current, and shows a slightly temperature-dependent behaviour in the plot. The effects of field electrodes are also studied. It is found from experimental results that the edge of the electric field around the device periphery plays an important role in the band-to-band tunnelling process, and a field electrode with suitable bias can improve the dark current response drastically.