Photoassisted tuning of silicon nanocrystal photoluminescence

Silicon is a rather inefficient light emitter due to the indirect band gap electronic structure, requiring a phonon to balance the electron momentum during the interband transition. Fortunately, momentum requirements are relaxed in the 1-5 nm diameter Si crystals as a result of quantum confinement effects, and bright photoluminescence (PL) in the UV-vis range is achieved. Photoluminescent Si nanocrystals along with the C- and SiC-based nanoparticles are considered bioinert and may lead to the development of biocompatible and smaller probes than the well-known metal chalcogenide-based quantum dots. Published Si nanocrystal production procedures typically do not allow for the fine control of the particle size. An accepted way to make the H-terminated Si nanocrystals consists of anodic Si wafer etching with the subsequent breakup of the porous film in an ultrasound bath. Resulting H-termination provides a useful platform for further chemical derivatization and conjugation to biomolecules. However, a rather polydisperse mixture is produced following the ultrasonic treatment, leading to the distributed band gap energies and the extent of surface passivation. From the technological point of view, a homogeneous nanoparticle size mixture is highly desirable. In this study, we offer an efficient way to reduce the H-terminated Si nanocrystal diameter and narrow size distribution through photocatalyzed dissolution in a HF/HNO3 acid mixture. Si particles were produced using the lateral etching of a Si wafer in a HF/EtOH/H2O bath followed by sonication in deaerated methanol. Initial suspensions exhibited broad photoluminescence in the red spectral region. Photoassisted etching was carried out by adding the HF/HNO3 acid mixture to the suspension and exposing it to a 340 nm light. Photoluminescence and absorbance spectra, measured during dissolution, show the gradual particle size decrease as confirmed by the photoluminescence blue shift. The simultaneous narrowing of the photoluminescence spectral bandwidth suggests that the dissolution rate varies with the particle size. We show that the Si nanoparticle dissolution rate depends on the amount of light adsorbed by the particle and accounts for the etching rate variation with the particle size. Significant improvement in the PL quantum yield is observed during the acid treatment, suggesting improvement in the dangling bond passivation.     

Highly luminescent silicon nanocrystals with discrete optical transitions.

A new synthetic method was developed to produce robust, highly crystalline, organic-monolayer passivated silicon (Si) nanocrystals in a supercritical fluid. By thermally degrading the Si precursor, diphenylsilane, in the presence of octanol at 500 degrees C and 345 bar, relatively size-monodisperse sterically stabilized Si nanocrystals ranging from 15 to 40 A in diameter could be obtained in significant quantities. Octanol binds to the Si nanocrystal surface through an alkoxide linkage and provides steric stabilization through the hydrocarbon chain. The absorbance and photoluminescence excitation (PLE) spectra of the nanocrystals exhibit a significant blue shift in optical properties from the bulk band gap energy of 1.2 eV due to quantum confinement effects. The stable Si clusters show efficient blue (15 A) or green (25-40 A) band-edge photoemission with luminescence quantum yields up to 23% at room temperature, and electronic structure characteristic of a predominantly indirect transition, despite the extremely small particle size. The smallest nanocrystals, 15 A in diameter, exhibit discrete optical transitions, characteristic of quantum confinement effects for crystalline nanocrystals with a narrow size distribution.     

Optical and photocatalytic properties of heavily F(-)-doped SnO2 nanocrystals by a novel single-source precursor approach

Heavily F-doped SnO(2) nanocrystals were successfully prepared by a novel synthetic approach involving low-temperature oxidation of a Sn(2+)-containing fluoride complex KSnF(3) as the single-source precursor with H(2)O(2). The F-doped SnO(2) powder was characterized by powder X-ray diffraction, TG-MS, BET surface area, diffuse reflectance spectroscopy, XPS, PL, FTIR spectroscopy, Raman spectroscopy, EPR spectroscopy, SEM, and TEM. Broadening of the diffracted peaks, signifying the low crystallite size of the products, was quite evident in the powder X-ray diffraction pattern of SnO(2) obtained from KSnF(3). It was indexed in a tetragonal unit cell with lattice constants a = 4.7106 (1) ? and c = 3.1970 (1) ?. Agglomeration of particles, with an average diameter of 5-7 nm, was observed in the TEM images whose spotwise EDX analysis indicated the presence of fluoride ions. In the core level high-resolution F 1s spectrum, the peak observed at 685.08 eV was fitted by the Gaussian profile yielding the fluoride ion concentration to be 21.23% in the SnO(2) lattice. Such a high fluoride ion concentration is reported for the first time in powders. SnO(2):F nanocrystals showed greater thermal stability up to 300 °C when heated in a thermobalance under flowing helium, after which generation of small quantities of HF was observed in the TG coupled mass spectrometry analysis. The band gap value, estimated from the Kubelka-Munk function, showed a large shift from 3.52 to 3.87 eV on fluoride ion doping, as observed in the diffuse reflectance spectrum. Such a large shift was corroborated to the overdoped situation due to the Moss-Burstein effect with an increase in the carrier concentration. In the photoluminescence (PL) spectrum, SnO(2):F nanocrystals exhibited a broad green emission arising from the singly ionized oxygen vacancies created due to higher dopant concentration. The evidence for singly ionized vacancies was arrived from the presence of a signal with a g value of 1.98 in the ESR spectrum of SnO(2):F at room temperature. The disordered nature of the rutile lattice and the enormous oxygen vacancies created due to fluoride ion doping were evident from the broad bands observed at 455, 588, and 874 cm(-1) in the room-temperature Raman spectrum of SnO(2):F. As the consequence of the oxygen vacancies, F-doped SnO(2) was examined for the function as a photocatalyst in the degradation of aqueous RhB dye solution under UV irradiation. A very high photocatalytic efficiency was observed for the F-doped SnO(2) nanocrystals as compared to pure SnO(2). The BET surface area of pure SnO(2) was quite high (207.81 m(2)/g) as compared to the F-doped SnO(2) nanocrystals (45.16 m(2)/g). Pore size analysis showed a mean pore diameter of 1.97 and 13.97 nm for the pure and doped samples. The increased photocatalytic efficiency was related to the very high concentration of oxygen vacancies in SnO(2) induced by F doping.     

17O magic angle spinning NMR studies of Brønsted acid sites in zeolites HY and HZSM-5

High-resolution 17O/1H double resonance NMR spectra were obtained for two zeolites, one with a low Si/Al ratio (zeolite HY) and one with a high Si/Al ratio (HZSM-5), to investigate their local structure and Br?nsted acidity. Two different oxygen signals, corresponding to Br?nsted acid sites in supercages and sodalite cages of zeolite HY were readily resolved in the two-dimensional (2-D) 1H-17O heteronuclear correlation (HETCOR) NMR spectra allowing the 17O isotropic chemical shift (deltaCS) and quadrupolar coupling parameters (quadrupolar coupling constant, QCC, and asymmetry parameter, eta) for the two oxygen atoms to be extracted. Similar experiments for HZSM-5 showed that the sites in this system are associated with a much larger distribution in NMR parameters than found in HY. 17O-1H rotational echo double resonance (REDOR) NMR was applied to probe the O-H distances in zeolites HY and HZSM-5. Weaker 17O-1H dephasing was observed for zeolite HZSM-5 in comparison to that of HY, consistent with longer O-H bonds and/or increased proton mobility.     

Structural and Chemical Properties of NiOx Thin Films: Oxygen Vacancy Formation in O2 Atmosphere

NiO_x films on Si(111) were put in contact with oxygen at elevated temperatures. During heating and cooling in oxygen atmosphere Near Ambient Pressure (NAP)-XPS and -XAS and work function (WF) measurements reveal the creation and replenishing of oxygen vacancies in dependence of temperature. Oxygen vacancies manifest themselves as a distinct O1s feature at 528.9 eV on the low binding energy side of the main NiO peak as well as by a distinct deviation of the Ni2p_3/2 spectral features from the typical NiO spectra. DFT calculations reveal that the presence of oxygen vacancies leads to a charge redistribution and altered bond lengths of the atoms surrounding the vacancies causing the observed spectral changes. Furthermore, we observed that a broadening of the lowest energy peak in the O K-edge spectra can be attributed to oxygen vacancies. In the presence of oxygen vacancies, the WF is lowered by 0.1 eV.     

Spectroscopic properties of colloidal indium phosphide quantum wires

Colloidal InP quantum wires are grown by the solution-liquid-solid (SLS) method, and passivated with the traditional quantum dots surfactants 1-hexadecylamine and tri-n-octylphosphine oxide. The size dependence of the band gaps in the wires are determined from the absorption spectra, and compared to other experimental results for InP quantum dots and wires, and to the predictions of theory. The photoluminescence behavior of the wires is also investigated. Efforts to enhance photoluminescence efficiencies through photochemical etching in the presence of HF result only in photochemical thinning or photooxidation, without a significant influence on quantum-wire photoluminescence. However, photooxidation produces residual dot and rod domains within the wires, which are luminescent. The results establish that the quantum-wire band gaps are weakly influenced by the nature of the surface passivation and that colloidal quantum wires have intrinsically low photoluminescence efficiencies.     

A mononuclear cyclopentadiene-iron complex grafted in the supercages of HY zeolite: synthesis, structure, and reactivity

The reaction of ferrocene with the acidic hydroxy groups in the supercages of zeolite HY dehydrated at 673 K and the reactivity of the resultant surface species towards CO and O(2) were investigated by temperature-programmed decomposition (TPD) and reduction (TPR) and IR, X-ray absorption fine structure analysis (XAFS), and X-ray photoelectron (XP) spectroscopy. In situ FTIR, TPD, TPR, and chemical analysis reveal that the Cp(2)Fe molecule adsorbed on the zeolite surface loses one cyclopentadienyl group under vacuum at 423 K, which leads to the formation of a well-defined mononuclear surface Fe-C(5)H(6) complex grafted to two acidic sites and one ([triple bond]Si-O-Si[triple bond]) unit, as confirmed by the lack of Fe-Fe contributions in the EXAFS spectra. Each iron atom is coordinated, on average, to three oxygen atoms of the zeolite surface with a Fe--O distance of 2.00 A and to five carbon atoms with a Fe--C distance of 2.09 A. IR spectra indicate that the cyclopentadiene-iron species grafted on the surface of the zeolite is quite stable in vacuo or under an inert or hydrogen atmosphere below 423 K, and is also relatively stable under oxygen at room temperature. However, the cyclopentadiene ligand readily reacts with CO to form a compound containing carbonyl at 323 K, and even at room temperature. The single carbonyl band in the IR spectra provides evidence for the nearly uniform formation of a cyclopentadiene-iron species on the surface of the zeolite.     

Optical spectra and structure of CdP4 nanoclusters fabricated by incorporation into zeolite and laser ablation

CdP(4) nanoclusters were fabricated by incorporation into the pores of zeolite Na-X and by deposition of the clusters onto a quartz substrate using the laser ablation-evaporation technique. Absorption and photoluminescence (PL) spectra of CdP(4) nanoclusters in zeolite were measured at temperatures 4.2, 77, and 293 K. Both absorption and PL spectra consist of two blue-shifted bands. We performed DFT calculations to determine the most stable clusters configuration in the size region up to the size of the zeolite Na-X supercage. The bands observed in absorption and PL spectra were attributed to the emission of (CdP(4))(3) and (CdP(4))(4) clusters with binding energies of 3.78 and 4.37 eV per atom, respectively. The Raman spectrum of CdP(4) clusters in zeolite proved the fact of creation of (CdP(4))(3) and (CdP(4))(4) clusters in zeolite pores. The PL spectrum of CdP(4) clusters produced by laser ablation consists of a single band that was attributed to the emission of the (CdP(4))(4) cluster.     

水相中CdTe纳米晶的制备及其光学性质

用不同稳定剂(巯基乙酸(TGA)、巯基丙酸(MPA)、L-半胱氨酸(L-Cys)、3-巯基-1,2-丙二醇(TG))在水相中制备了CdTe纳米晶, 并用透射电子显微镜(TEM)、X射线光电子能谱(XPS)和X射线粉末衍射(XRD)等技术对其进行了表征. 研究了不同水相合成条件对CdTe纳米晶光学性质的影响, 结果表明, n(Cd):n(Te)、溶液pH值、回流时间以及稳定剂的性质, 对纳米晶的光学性质具有显著影响. 制得的CdTe纳米晶发射峰窄且对称(半高全宽达38 nm), 用不同稳定剂制备的纳米晶发光量子效率有所不同, 用不同的激发波长对纳米晶进行激发时, 发射峰并未表现出明显的移动.     

Passivation of GaAs nanocrystals by chemical functionalization

The effective use of nanocrystalline semiconductors requires control of the chemical and electrical properties of their surfaces. We describe herein a chemical functionalization procedure to passivate surface states on GaAs nanocrystals. Cl-terminated GaAs nanocrystals have been produced by anisotropic etching of oxide-covered GaAs nanocrystals with 6 M HCl(aq). The Cl-terminated GaAs nanocrystals were then functionalized by reaction with hydrazine or sodium hydrosulfide. X-ray photoelectron spectroscopic measurements revealed that the surfaces of the Cl-, hydrazine-, and sulfide-treated nanocrystals were As-rich, due to significant amounts of As0. However, no As0 was observed in the photoelectron spectra after the hydrazine-terminated nanocrystals were annealed at 350 degrees C under vacuum. After the anneal, the N 1s peak of hydrazine-exposed GaAs nanocrystals shifted to 3.2 eV lower binding energy. This shift was accompanied by the appearance of a Ga 3d peak shifted 1.4 eV from the bulk value, consistent with the hypothesis that a gallium oxynitride capping layer had been formed on the nanocrystals during the annealing process. The band gap photoluminescence (PL) was weak from the Cl- and hydrazine- or sulfide-terminated nanocrystals, but the annealed nanocrystals displayed strongly enhanced band-edge PL, indicating that the surface states of GaAs nanocrystals were effectively passivated by this two-step, wet chemical treatment.     

On the Origin of the Large Stokes-Shift of the Emission of CdS Nanoparticles Embedded in a Phosphate Glass Matrix

XRD and TEM characterisation evidenced the formation of well-dispersed CdS nanoparticles inside a phosphate glass matrix. Optical absorption and time-resolved photoluminescence study were carried out on the prepared glass samples. Optical absorption revealed the fast character of the growth of CdS nanoparticles in this medium. Photoluminescence spectra showed only one large band with a maximum at almost 740 nm, which was associated to transitions between energy levels within the bandgap of the CdS nanoparticles. From the steady state and time-resolved measurements, it was suggested that the emission comes mainly from sulfur vacancies inside the nanocrystals and on its surface, which act as deep traps for the photogenerated electrons. The creation of such vacancies was attributed to the loss of sulfur during the glass preparation as evidenced from a chemical analysis using energy dispersive X-ray spectrometry. These traps may be also induced by the fast growth of CdS nanocrystals in this matrix or laser exposure during PL measurements. These CdS-doped glasses with an intense absorption in the UV–Vis region and a large emission band with long lifetime and a large Stokes-shift are adequate for luminescent solar concentrators, photocatalytic applications and solid-state lasers.     

Effect of Radiation Defects on the Electronic Structure of Zircon by X-Ray Photoelectron Spectroscopy Data

X-Ray photoelectron spectroscopy (XPS) is used to study the electronic structure of radiation damaged samples of ZrSiO₄ zircon mineral at early and middle stages of its radiation destruction. The effects of radiation induced atomic disordering are found to be most distinctly manifested in the spectra of O1s states and to a smaller extent in the spectra of Si2p states, and also in the zircon valence band. Based on the quantum chemical calculation results the conclusion is drawn that the observed changes in XPS lines are caused by the formation of oxygen vacancy defects and an increase in the covalency of interatomic bonds near oxygen vacancies. For zircon samples with a low/moderate degree of radiation damage these changes reflect the initial stage of the polymerization of the ZrSiO₄ structure due to the formation of Si—O—Si chain fragments.     

Electrodeposition of ZnO on carbon nanofiber buckypaper

ZnO nanostructures have been electrochemically synthesized on three-dimensional, interconnected, and porous carbon nanofiber Buckypaper substrates. Using potentiostatic deposition, wurtzite ZnO with controlled microstructure and morphology has been deposited. While all ZnO deposits exhibit a band gap value of around 3.2 eV, impurity states determined by photoluminescence (PL) measurements show strong deposition potential influences. Both the green and red emissions corresponding to respective oxygen vacancies and oxygen rich impurity states can be identified. Thermal annealing can greatly reduce oxygen vacancy concentration but has limited effects on the oxygen rich defects. This study suggests a cost-effective and high-throughput approach in deposition of ZnO nanostructures suitable for photovoltaic applications.     

Microstructure-controlled aerosol-gel synthesis of ZnO quantum dots dispersed in SiO2 nanospheres

ZnO quantum dots dispersed in a silica matrix were synthesized from a TEOS:Zn(NO(3))(2) solution by a one-step aerosol-gel method. It was demonstrated that the molar concentration ratio of Zn to Si (Zn/Si) in the aqueous solution was an efficient parameter with which to control the size, the degree of agglomeration, and the microstructure of ZnO quantum dots (QDs) in the SiO(2) matrix. When Zn/Si ≤ 0.5, unaggregated quantum dots as small as 2 nm were distributed preferentially inside SiO(2) spheres. When Zn/Si ≥ 1.0, however, ZnO QDs of ～7 nm were agglomerated and reached the SiO(2) surface. When decreasing the ratio of the Zn/Si, a blue shift in the band gap of ZnO was observed from the UV/Visible absorption spectra, representing the quantum size effect. The photoluminescence emission spectra at room temperature denoted two wide peaks of deep-level defect-related emissions at 2.2-2.8 eV. When decreasing Zn/Si, the first peak at ～2.3 eV was blue-shifted in keeping with the decrease in the size of the QDs. Interestingly, the second visible peak at 2.8 eV disappeared in the surface-exposed ZnO QDs when Zn/Si ≥ 1.0.     

Formation of indium nitride nanorods within mesoporous silica SBA-15

We report the first formation of arrays of InN nanorods inside the nanoscale channels of mesoporous silica SBA-15. In(NO3)3 dissolved in methanol was incorporated into SBA-15 powder without prior pore surface functionalization. Formation of InN nanorod arrays was carried out by ammonolysis at 700 degrees C for 8 h. The final products have been characterized by FT-IR spectra, (29)Si MAS NMR spectra, Raman spectra, XRD patterns, TEM images, nitrogen adsorption-desorption isotherm measurements, and optical spectroscopy. The freestanding InN nanorods observed after silica framework removal with HF solution show diameters of 6-7.5 nm and lengths of 25-50 nm. Formation of a trace amount of In2O3 was also verified. The InN nanorods exhibit a broad band centered at around 550-600 nm, and a band gap energy of 1.5 eV was determined. No light absorption in the near-IR region was measured. The nanorods give a weak emission band centered at around 600 nm. These optical properties are believed to be related to the possible incorporation of oxygen during InN nanorod synthesis.     

Solvothermal synthesis of well-dispersed NaMgF3 nanocrystals and their optical properties

Complex metal fluoride NaMgF(3) nanocrystals were successfully synthesized via a solvothermal method at a relatively low temperature with the presence of oleic acid, and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared (FT-IR) spectra, photoluminescence (PL) excitation and emission spectra, respectively. In the synthetic process, oleic acid as a surfactant played a crucial role in confining the growth and solubility of the NaMgF(3) nanocrystals. The as-prepared NaMgF(3) nanocrystals have quasi-spherical shape with a narrow distribution. A possible formation mechanism of the nanocrystals was proposed based on the effect of oleic acid. The as-prepared NaMgF(3) nanocrystals are highly crystalline and well-dispersed in cyclohexane to form stable and clear colloidal solutions, which demonstrate a strong emission band centered at 400 nm in photoluminescence (PL) spectra compared with the cyclohexane solvent. The PL properties of the colloidal solutions of the as-prepared nanocrystals can be ascribed to the trap states of surface defects.     

The role of surface defects in multi-exciton generation of lead selenide and silicon semiconductor quantum dots

Multi-exciton generation (MEG), the creation of more than one electron-hole pair per photon absorbed, occurs for excitation energies greater than twice the bandgap (E(g)). Imperfections on the surface of quantum dots, in the form of atomic vacancies or incomplete surface passivation, lead to less than ideal efficiencies for MEG in semiconductor quantum dots. The energetic onset for MEG is computed with and without surface defects for nanocrystals, Pb(4)Se(4), Si(7), and Si(7)H(2). Modeling the correlated motion of two electrons across the bandgap requires a theoretical approach that incorporates many-body effects, such as post-Hartree-Fock quantum chemical methods. We use symmetry-adapted cluster with configuration interaction to study the excited states of nanocrystals and to determine the energetic threshold of MEG. Under laboratory conditions, lead selenide nanocrystals produce multi-excitons at excitation energies of 3 E(g), which is attributed to the large dielectric constant, small Coulomb interaction, and surface defects. In the absence of surface defects the MEG threshold is computed to be 2.6 E(g). For lead selenide nanocrystals with non-bonding selenium valence electrons, Pb(3)Se(4), the MEG threshold increases to 2.9 E(g). Experimental evidence of MEG in passivated silicon quantum dots places the onset of MEG at 2.4 E(g). Our calculations show that the lowest multi-exciton state has an excitation energy of 2.5 E(g), and surface passivation enhances the optical activity of MEG. However, incomplete surface passivation resulting in a neutral radical on the surface drives the MEG threshold to 4.4 E(g). Investigating the mechanism of MEG at the atomistic level provides explanations for experimental discrepancies and suggests ideal materials for photovoltaic conversion.     

Mechanisms of photoluminescence at cds polycrystalline electrodes in contact with aqueous electrolytes

The red and infrared emissions in the photoluminescence spectra of polycrystalline CdS electrodes have been studied as a function of the atmosphere and temperature of annealing, excitation light intensity, applied bias and electrolyte composition. The experimental results suggest that the red luminescence is associated with a recombination mechanism involving valence band holes and electrons trapped at sulfur vacancies at about 0.7 eV below the conduction band edge. Infrared emission seems to involve, besides sulfur vacancies, cadmium vacancies (hole traps) at about 0.3 eV above the valence band edge. Both hole injection rate and concentration of S and Cd vacancies are the parameters determining the shape of the luminescence spectra.     

Raman and Photoluminescence Spectroscopic Detection of Surface‐Bound Li+O2− Defect Sites in Li‐Doped ZnO Nanocrystals Derived from Molecular Precursors

We present a detailed study of Raman spectroscopy and photoluminescence measurements on Li‐doped ZnO nanocrystals with varying lithium concentrations. The samples were prepared starting from molecular precursors at low temperature. The Raman spectra revealed several sharp lines in the range of 100–200 cm^?1, which are attributed to acoustical phonons. In the high‐energy range two peaks were observed at 735 cm^?1 and 1090 cm^?1. Excitation‐dependent Raman spectroscopy of the 1090 cm^?1 mode revealed resonance enhancement at excitation energies around 2.2 eV. This energy coincides with an emission band in the photoluminescence spectra. The emission is attributed to the deep lithium acceptor and intrinsic point defects such as oxygen vacancies. Based on the combined Raman and PL results, we introduce a model of surface‐bound LiO₂ defect sites, that is, the presence of Li⁺O₂^? superoxide. Accordingly, the observed Raman peaks at 735 cm^?1 and 1090 cm^?1 are assigned to Li? O and O? O vibrations of LiO₂.