Effective Ru moment in RuSr2Eu2−xCexCu2O10 from high-temperature magnetic susceptibility

We have made high-temperature (250 K<T<800 K) DC susceptibility measurements in the compounds RuSr₂Eu_2−xCe_xCu₂O₁₀ for x=0.6,0.8, and 1.0 in order to determine the Ru effective magnetic moment. After carefully subtracting all contributions to the magnetic susceptibility except that of the Ru ions, we have been able to fit the Ru susceptibility with a law χ_Ru=χ₀+C_Ru/(T−Θ_Ru). We have found that the Ru effective moment falls between the values expected for Ru⁵⁺ in spin states and . We have also found a dependence of μ_eff(Ru) and Θ_Ru with the Ce content x.     

Non-Fermi liquid regimes in U1−xMxPd2Al3(M=Y,Th)

The temperature-composition (T–x) phase diagram and NFL characteristics in the electrical resistivity ρ(T), specific heat C(T), and magnetic susceptibility χ(T) at low temperatures for the systems U_1−xM_xPd₂Al₃ (M=Y,Th) are described. The T–x phase diagram, the NFL characteristics, and the underlying mechanism for the NFL behavior are distinctly different for M=Y³⁺ and Th⁴⁺, apparently reflecting the difference in valence of the M atom substituents, and suggesting that U is tetravalent in these two systems.     

Realization of quantum Fourier transform over ZN

Since the difficulty in preparing the equal superposition state of amplitude is 1/√N, we construct a quantile transform of quantum Fourier transform （QFT） over ZN based on the elementary transforms, such as Hadamard transform and Pauli transform. The QFT over Z_N can then be realized by the quantile transform, and used to further design its quantum circuit and analyze the requirements for the quantum register and quantum gates. However, the transform needs considerable quantum computational resources and it is difficult to construct a high-dimensional quantum register. Hence, we investigate the design of t-bit quantile transform, and introduce the definition of t-bit semiclassical QFT over Z_N. According to probability amplitude, we prove that the transform can be used to realize QFT over ZN and further design its quantum circuit. For this transform, the requirements for the quantum register, the one-qubit gate, and two-qubit gate reduce obviously when compared with those for the QFT over Z_N.     

Measurement of the proton spectra from non-mesonic weak decay of ΛHe, ΛLi and ΛC

The results of a measurement of the proton spectra following the non-mesonic weak decay of ⁵_ΛHe, ⁷_ΛLi and ¹²_ΛC are presented and discussed. The experiment was performed at the (e⁺ e⁻) collider DAΦNE at Laboratori Nazionale di Frascati of INFN. It is the first measurement for ⁷_ΛLi, and for all the spectra the lower limit on the energy of the protons is 15 MeV, never reached before. All the spectra show a similar shape, namely a peak at around 80 MeV as expected for the free Λp→np weak reaction, with a low energy rise that should be due to final state interactions and/or two-nucleon induced weak processes. The decay spectrum of ⁵_ΛHe is somehow similar to the ones reported by previous measurements and theoretical calculations, but the same does not happen for the ¹²_ΛC one.     

Synthesis and investigation of the complex copper oxides Bi2Sr2R2−xCexCu2O10+δ (R=rare earth)

Bi-2222 phases were prepared by solid state reactions and were studied using X-ray diffraction, chemical and EDS-analysis. Compounds with composition Bi₂Sr₂R_1.33Ce_0.67Cu₂O_10+δ were obtained for R=Pr, Nd, Sm-Er. The phases Bi₂Sr₂Cu₂O_10+δ with similar structure but without Ce were prepared for R = Pr, Sm-Dy. For Bi₂Sr₂Eu_2−xCe_xCu₂O_10+δ the solubility limit was determined and the effect of treatment under different oxygen pressures was investigated. Weak diamagnetic signals (<3%) were detected for some of these samples.     

Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

Synthesis and characterization of the Aurivillius phases Bi2 − xPbxSr1 − xNdxNb2O9

The n = 2 Aurivillius phase Bi_{2 − x}Pb_xSr_{1 − x}Nd₂O₉ was successfully synthesized as a ceramic material over the whole range of simultaneous, charge compensated substitution x = 0–1.0. Structural investigations were performed by Rietveld refinement applying different space groups Fmmm and A2₁am, and additionally by X-ray absorption spectroscopy (EXAFS) on the Nd L_III-edge, confirming the accommodation of Nd on the atomic sites of Sr, which implies the substitution of Bi³⁺ by the isoelectronic Pb²⁺. The ferroelectric transition temperature T_c = 270 °C of the substituted powders with x = 0.4 and 1.0 is distinctly reduced compared to the unsubstituted sample with T_c = 450 °C. In temperature resolved powder X-ray diffraction patterns no structural phase transition could be detected.     

AlOx prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 cm%-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software （PC1D）. With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.     

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.     

First-principles study of the structural,elastic, and optical properties for Sr0.5Ca0.5TiO3

A detailed theoretical study of the structural, elastic, and optical properties for Sr0.5Ca0.5TiO3 is carried out by first- principles calculations. The band structure exhibits a direct bandgap of 2.08 eV at the F point in the Brillouin zone. The bulk modulus, shear modulus, Young＇s modulus, and Poisson＇s ratio are derived based on the calculated elastic constants. The bulk modulus B = 153 GPa and shear modulus G = 81GPa are in good agreement with available experimental data. Poisson＇s ratio v = 0.275 suggests that Sr0.sCa0.sTiO3 should be classified as being a ductile material. Using the electronic band structure and density of states, we analyze the interband contribution to the optical properties. The real and imaginary parts of the dielectric function, as well as the optical properties such as the optical absorption coefficient, refractive index, extinction coefficient, and energy-loss spectrum are calculated. The static dielectric constant ε1 （0） and the refractive index n（0） are also investigated.     

The transition probability of DJ-F0 and hole-burning quantum efficiency in the SryBa1−yFCl0.5Br0.5:Sm system

We report the changes of the ⁵D_J-⁷F₀(J = 2, 1, 0) transition probability with composition y and its effect on the hole burning quantum efficiency in the Sr_yBa_1−yFCl_0.5Br_0.5:Sm²⁺ system. We observed that the ⁵D_J-⁷F₀ transition probability increases with the increase of Sr concentration. This result is attributed to the reduction of the energy separation between the ⁵D_J level and the 4f5d bands, which makes the electron wave functions of ⁵D_J states mix further with that of the 4f5d states. The dependence of the hole-burning quantum efficiency on the 5D_J-⁷F₀ transition probability was derived by the dynamical equations of the spectral hole burning of divalent samarium. Furthermore, the hole-burning experiments in SrFCl_0.5Br_0.5:Sm²⁺ and BaFCl_0.5:Sm²⁺ were performed under the same conditions. The experimental results present that the hole-burning quantum efficiency of SrFCl_0.5Br_0.5:Sm²⁺ is higher than that of BaFCl_0.5Br_0.5:Sm²⁺.     

Crystal structures of stage-n iodine-intercalated compounds IBi2nSr2nCanCu2nOx

The crystal structure of stage-3 iodine-intercalated superconducting IBi₆Sr₆Ca₃Cu₆O_x has been determined by transmission electron microscopy to belong to the space group Pma2 with lattice parameters a=5.4Å, B=5.4Å and C=49.4Å. Ioidine atoms intercalated between every three Bi---O bilayers expand the distance between the Bi---O layers by 3.6Å and alter the atomic stacking across Bi---O layers from the staggered configuration characteristic of host superconducting Bi₂Sr₂CaCu₂O_x to an aligned configuration characteristic of stage-1 iodine-intercalated superconducting IBi₂Sr₂CaCu₂O_x. Higher-stage intercalation has also been observed as stacking faults which predominantly contain both stage-2 and stage-3 phases. The space groups and c-axis dimensions of the higher-stage phases have been deduced to be Pma2 with c=3.6+15.3n Å when stage number n is odd, and Bbmb with c=2(3.6+15.3n) Å when n is even.     

Influence of Nd substitution on the superconducting properties of ceramics in the 2212 system Bi2−wPbwSr2−xCa1−yNdx+yCu2O8+z

In the system Bi_2−wPb_wSr_2−xCa_1−yNd_x+yCu₂O_8+z different fractions of Nd are substituted on either Sr of Ca sites in order to introduce intrinsic insulating pinning centres. It is shown that a Nd concentration around x or y = 0.2 is likewise favourable with an average Nd---Nd distance in the range of the coherence length in the a, b-plane. However, clear evidence of flux pinning is only present for charge compensation with Pb²⁺. A simultaneous substitution of the Bi-based 2212 superconductor with moderate amounts of Nd³⁺ and Pb²⁺ improves the superconducting properties by strengthening the flux pinning forces.     

Thermodynamic analysis of BaxK1 − xBiO3 using the Eliashberg theory

In order to understand the mechanism that gives rise to superconductivity in the ceramic superconductors of the type Ba_xK_{1 − x}BiO₃, we analyze the thermodynamic properties with the use of the Eliashberg equations. For these calculations we used the electron-phonon spectral density function ²(ω)F(ω), calculated by Shirai et al. [1] from first principles for two different K concentrations, x=0.5 and x=0.7.     

The crystal structure, magnetism, and colossal magnetoresistance of Y2CrS4

Ternary yttrium chromium sulfide,Y2CrS4,prepared by the solid-state reaction of Y2S3,Cr,and S,was found to exhibit an antiferromagnetic transition at about 64 K.The X-ray diffraction pattern at 300 K was refined with space group Pca2 1,and the structure parameters were determined to be a = 12.51 Ab = 7.53A,and c = 12.49A,We investigated the magnetotransport properties,and observed negative colossal magnetoresistance reaching up to 2.5 × 10^ 4 % in the semiconducting compound of Y2CrS4.     

多铁材料Bi1-xCaxFeO3的介电、铁磁特性和高温磁相变

采用溶胶凝胶法制备Bi_1-xCa_xFeO₃ (x=0, 0.05, 0.1, 0.15, 0.2)陶瓷样品. X衍射图谱表明所有样品的主衍射峰均与纯相BiFeO₃相符合且具有良好的晶体结构. 随着x的增大, Bi_1-xCa_xFeO₃样品的主衍射峰由双峰(104)与(110) 逐渐重叠为单峰(110), 当x ≥0.15时, 样品呈现正方晶系结构; 扫描电镜形貌分析可知, 晶粒由原来的0.5 μm逐渐增大到2 μm. Bi_1-xCa_xFeO₃样品介电常数和介电损耗随着x 的增加先增大而后减小. 当f=1 kHz, Bi_0.9Ca_0.1FeO₃ 的介电常数达到最大值, 是BiFeO₃的7.5倍, 而Bi_0.8Ca_0.2FeO₃的介电常数达到最小值, 仅仅是BiFeO₃的十分之一. Bi_1-xCa_xFeO₃样品所呈现的介电特性是由偶极子取向极化和空间电荷限制电流两种极化机理共同作用的结果. 随着Ca²⁺ 的引入, BiFeO₃ 样品的铁磁性显著提高. X射线光电子能谱图表明Fe²⁺和Fe³⁺ 共存于Bi_1-xCa_xFeO₃ 样品中, Fe²⁺/Fe³⁺比例随着Ca²⁺ 掺杂量的增加而增大, 证明Ca²⁺掺杂增加了Fe²⁺的含量, 增强BiFeO₃的铁磁特性. 从M-T曲线观察到BiFeO₃样品在878 K附近发生铁磁相变, 示差扫描量热法测试再次证明BiFeO₃ 在878 K发生相变. Ca²⁺掺杂使BiFeO₃样品的T_N略有变化而T_M基本不变, 其主要原因是Fe-O-Fe反铁磁超交换作用的强弱和磁结构相对稳定.     

Thermal properties of high-k Hf1-xSixO2

Classical atomistic simulations based on the lattice dynalnics theory and the Born core-shell model are performed to systematically study the crystal structure and thermal properties of high-k Hfl-xSixO2. The coefficients of thermal expansion, specific heat, Griineisen parameters, phonon densities of states and Debye temperatures are calculated at different temperatures and for different Si-doping concentrations. With the increase of the Si-doping concentration, the lattice constant decreases. At the same time, both the coefficient of thermal expansion and the specific heat at a constant volume of Hf1-mSixO2 also decreases. The Griineisen parameter is about 0.95 at temperatures less than 100 K. Compared with Si-doped HfO2, pure HfO2 has a higher Debye temperature when the temperature is less than 25 K, while it has lower Debye temperature when the temperature is higher than 50 K. Some simulation results fit well with the experimental data. We expect that our results will be helpful for understanding the local lattice structure and thermal properties of Hf1-mSixO2.     

Oxygen nonstoichiometry and phase transitions of the neodymium-rich Nd1+xBa2−xCu3Oz solid solution

On the basis of chemical, thermal analysis and Cu K-edge X-ray absorption measurements, oxygen content in the Nd_1+xBa_2−xCu₃O_z solid solution was determined between 1000°C in air and 400°C in oxygen for x=0.05–0.9 compositions. It has been observed that the oxygen nonstoichiometry Δz of the Nd_1+xBa_2−xCu₃O_7+x/2−Δz solid solution decreases 2–2.5 times for a large substitution (Δz≈0.3–0.33 for x=0.9), despite of the acclaimed higher total oxygen content. The difference in nonstoichiometry is explained by a higher average value of the copper oxidation state (ACV), which is vital for the solid solution with large x even at elevated temperatures (ACV≈2–2.05 for x>0.3 at 1000°C, PO₂=0.21 atm). On the contrary, the ACV after complete oxygenation is almost constant (about 2.25–2.3) for the whole series. The x-dependence of the oxygen content is not monotonous and structural phase transitions can be observed at x=0.3 and x=0.6, as confirmed by the X-ray diffraction and the Raman scattering spectroscopy. The first well-known transition is connected with the oxygen disorder due to the Nd substitution for Ba at random Ba-sites. In the present work, it is proved by the apical oxygen mode broadening in Raman spectra. Ordering of the Nd and Ba atoms with a subsequent orthorhombic distortion of the lattice may occur even at 1000°C in air due to the second transformation at x≈0.6. The invariable orthorhombicity of the Nd-rich solid solution with x>0.6 is not caused by the oxygen absorption as in the x=0.05 case. Existence of high- and low-temperature orthorhombic modifications of this solid solution has been observed for the first time. Finally, a tentative 3D (z–x–T) diagram is suggested for the Nd_1+xBa_2−xCu₃O_z solid solution up to 1000°C in air, including the new x=0.6–0.9 region.     

Effects of 230 MeV Au irradiation on Bi2Sr2CaCu2Ox

Bi₂Sr₂CaCu₂O_x tapes were irradiated using 230 MeV Au¹⁴⁺ ions. Columnar defects were presumably produced due to irradiation. Zero-field-cooling (ZFC) magnetization increased up to a fluence of 1.6 × 10¹¹ Au⁺/cm², but field-cooling (FC) magnetization decreased, indicating the strong pinning effects resulting from the columnar defects. The critical current density as well as the irreversibility field, obtained from the hysteresis loops, were enhanced. Irreversibility fields are fitted by H_irr = A exp(−T/T_A). An effective activation energy for flux motion was obtained from the measurements of magnetization relaxation. The features of flux pinning as a result of the columnar defects were compared with those of point defects brought about by 120 MeV O⁷⁺ irradiation.