可控高速旋转的纳米线和纳米线微型电动机

文章报道了一种通过在微型电极上加交流电场,实现有控制地高速度转动纳米线的通用方法.纳米线的转动可以被瞬时启动或瞬时停止,转动速度（每分钟至少可达1800 rpm）,方向和总转动角度都可被精确控制.文章作者推导出了流体阻力在不同长度纳米线上施加的转矩,还用一根转动的纳米线作为微型电动机,推动灰尘颗粒做圆周运动.这种方法可以被用来转动磁性的或者非磁性的纳米线,甚至碳纳米管.这和微流机械,微搅动机,以及MEMS的关系显而易见.     

衬底对化学气相沉积法制备氧化硅纳米线的影响

通过化学气相沉积法在不同衬底上制备了大量的氧化硅纳米线.选用衬底为Si片、带有约100nm厚SiO2氧化层Si片和石英片.利用场发射扫描电子显微镜(SEM)和透射电镜(TEM，配备有能谱仪)对样品的表面形貌、结构和成分进行研究.结果表明：这些纳米线都为非晶态，但在不同衬底上生长的纳米线形貌、尺寸和化学成分不同.讨论了各种衬底对不同特征氧化硅纳米线生长的影响. 关键词： 化学气相沉积 纳米线 纳米颗粒     

DNA银纳米线的制备及其拉曼光谱

根据DNA分子的静电自组装性质,利用加热和紫外照射相结合的方法制备出大小均匀,粒径约为7.8 nm的呈正电性的银纳米颗粒。在预先梳直的小牛胸腺DNA模板上合成了长约2 μm、直径约30 nm、银颗粒较均匀分布的银纳米线。拉曼光谱表明：银颗粒主要结合在DNA主链上,同时脱氧核糖和碱基的振动峰也受到影响。磷酸根骨架的伸缩振动峰782和1 098 cm-1的强度明显减少,且谱线782移动到791 cm-1。脱氧核糖C—O的伸缩特征峰1 011和1 050 cm-1分别移动到1 030和1 064 cm-1。碱基的特征峰1 372,1 334, 1 304和728 cm-1分别移动到1 368,1 320,1 294和731 cm-1。     

单晶ZnO纳米线的合成和生长机理研究

用化学气相输运(CVT)方法合成了直径在20～120nm呈单晶结构的ZnO纳米线.利用场发射扫描电 镜(FESEM)、高分辨透射电镜(HRTEM)以及选区电子衍射(SAED)等技术对ZnO纳米线的生长机理和结构进行 了系统研究,结果表明,纳米线的成核与Au Zn合金催化颗粒的饱和度有直接的关系,先饱和的颗粒上纳米线首 先成核.纳米线顶端合金颗粒组成的变化是导致纳米线生长终止的重要原因,大量纳米线的生长不是同时进行 的.本工作提供了支持纳米线气液固(V L S)生长机理的新实验证据,提出了氧化物纳米线的生长机理.     

高定向石墨表面金纳米粒子和金纳米线的研究

利用真空沉积方法在高定向石墨(HOPG)基底上直接制备了粒径分布较小的金纳米粒子.超高真空扫描隧道显微镜(STM)研究发现,在74℃退火后,表观直径为2.5nm的金纳米粒子在HOPG基底上形成了排列均匀的准一维纳米粒子链,并且此金纳米粒子链结构稳定.在122℃退火后,不同粒径的金纳米粒子在HOPG基底表面上聚合长大形成了准一维金纳米线.这一发现为制备由金粒子组成的有序纳米结构开辟了探索途径.     

高定向石墨表面金纳米粒子和金纳米线的研究

利用真空沉积方法在高定向石墨(HOPG)基底上直接制备了粒径分布较小的金纳米粒子.超高真空扫描隧道显微镜(STM)研究发现,在74℃退火后,表观直径为2.5?nm的金纳米粒子在HOPG基底上形成了排列均匀的准一维纳米粒子链,并且此金纳米粒子链结构稳定.在122℃退火后,不同粒径的金纳米粒子在HOPG基底表面上聚合长大形成了准一维金纳米线.这一发现为制备由金粒子组成的有序纳米结构开辟了探索途径.     

SiO2纳米线簇、C-Si-O纳米球的制备及形貌、红外光谱和光致发光光谱研究

以二茂铁和硅油作为催化剂和原料,利用高温裂解硅油为C,Si,O源,在常压N₂和H₂混合气氛的化学气相沉积管式炉中制备了大量直径为5—40 nm、长数百纳米的非晶SiO₂纳米线簇及粒径为100—300 nm的C-Si-O实心纳米球. 利用透射电子显微镜、扫描电子显微镜对产物形貌进行表征.Fourier红外吸收谱显示出非晶SiO₂所具有的474,802和1100 cm^-1三个特征峰;SiO₂纳米线簇的光致发光光谱具有较强440 nm蓝光发光峰;而C-Si-O（原子数之比为1.13∶1∶2.35）纳米球具有奇特的红绿蓝（625,540,466 nm）三色光致发光谱. 关键词： 2纳米线簇')" href="#">SiO₂纳米线簇 C-Si-O纳米球 高温裂解 Fourier红外谱     

基于纳米线波导和一维光子晶体纳米梁腔的模分-波分混合解复用器

设计了一种基于纳米线波导和一维光子晶体纳米梁腔的模分-波分混合解复用器,该器件由波分解复用(WDM)和模分解复用(MDM)两部分组成.其中,波分解复用部分由两个一维光子晶体纳米梁腔构成,模分解复用部分采用硅基纳米线波导结构.利用三维时域有限差分法,计算分析了该混合解复用器的性能参数.结果 表明,该器件可以在波长1570...     

基于交指滤波器的高隔离度宽带双工器设计

针对用于无线通信系统中的高隔离度宽带双工器, 首先将双工器指标拆分为留有一定余量的Tx, Rx滤波器指标, 然后使用微带交指结构和基于耦合系数与外部品质因数的改进方法, 设计出满足指标的宽带Tx, Rx滤波器, 最后使用两种T型结和滤波器组合的结构对双工器进一步设计, 并对这两种结构的微带双工器进行了仿真分析。仿真结果显示, 并行连接的双工器结构紧凑, 但隔离度较差; 串行连接的双工器通带内最小回波损耗为14.16dB, 最大插入损耗为1.01dB, 通带间最小隔离度为53.46dB, 双工器尺寸为8.089 9mm×2.059 1mm×0.302mm, 完全满足指标要求, 并且具有相对带宽大、隔离度高、插入损耗低的优点, 为设计高性能双工器提供了可行性。     

Windows95环境中转速测量和直流电机转速控制方法

介绍在Windows95环境中用Visual Basic5.0编写转速测量和直流电机转速控制方法的过程。     

Synthesis and field emission properties of GaN nanowires

Gallium nitride (GaN) nanowires grown on nickel-coated n-type Si (1 0 0) substrates have been synthesized using chemical vapor deposition (CVD), and the field emission properties of GaN nanowires have been studied. The results show that (1) the grown GaN nanowires, which have diameters in the range of 50-100 nm and lengths of several micrometers, are uniformly distributed on Si substrates. The characteristics of the grown GaN nanowires have been investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM), and through these investigations it was found that the GaN nanowires are of a good crystalline quality (2) When the emission current density is 100 μA/cm², the necessary electric field is an open electric field of around 9.1 V/μm (at room temperature). The field enhancement factor is ∼730. The field emission properties of GaN nanowires films are related both to the surface roughness and the density of the nanowires in the film.     

Effective AC and DC Responses of Nonlinear Composites at Higher Concentration

For higher concentration of inclusions, an effective medium approximation （EMA） method is used to investigate the bulk effective response of weakly nonlinear composites, which are subject to the constitutive relation of electric displacement and electric field, Dα = εαE ＋Xα｜E｜^2 E. As an example of three dimensions, under the external AC and DC electric fields Eapp = Eα（1 ＋ sinωt）, we have derived the general effective nonh＇near response of composites by the EMA method for higher concentration of spherical inclusions. Furthermore, the effective nonlinear responses at harmonics are predicted.     

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利用离子香蕉轨道中心坐标和香蕉轨道平均算符,讨论了磁岛转动引起的沿磁力线电流分布及其对新经典撕裂模演进的影响.结果显示,考虑此电流的影响,当磁岛旋转频率ω=ω*i时,被离子香蕉轨道宽度效应削弱的自举电流驱动项基本恢复;当ω=ω*e时,离子香蕉轨道宽度效应对自举电流驱动项的削弱则加剧.这意味着磁岛转动方向不同时,此沿力线电流能显著增大或减弱离子香蕉轨道宽度效应对自举电流驱动项的削弱作用.     

小磁岛转动引起的沿磁力线电流对撕裂模的影响

利用离子香蕉轨道中心坐标和香蕉轨道平均算符,讨论了磁岛转动引起的沿磁力线电流分布及其对新经典撕裂模演进的影响。结果显示,考虑此电流的影响,当磁岛旋转频率ω=ω_*i 时,被离子香蕉轨道宽度效应削弱的自举电流驱动项基本恢复;当ω=ω_*e时,离子香蕉轨道宽度效应对自举电流驱动项的削弱则加剧。这意味着磁岛转动方向不同时,此沿力线电流能显著增大或减弱离子香蕉轨道宽度效应对自举电流驱动项的削弱作用。     

Modeling and simulation of long reach high speed inter-satellite link (ISL)

A hybrid OFDM–IsOWC system incorporating diverse modulation schemes like optical double side band (ODSB), optical tandem side band (OTSB) and optical single side band (OSSB) is carried out to optimize a long reach high speed inter-satellite link (ISL) with acceptable SNR and BER. The proposed system is also reported under the influence of antenna efficiency and pointing error at varied values of power levels. Simulations point toward that the proposed hybrid OFDM–OSSB–IsOWC transmission system promises significantly enhanced ISL link compared to conventional IsOWC systems.     

Characterization of laser processing of single‐crystal natural diamonds using micro‐Raman spectroscopic investigations

The application of lasers for processing diamond has revolutionized the diamond industry and its applications in microelectronics, microelectromechanical system (MEMS) and microoptoelectromechanical system (MOEMS) technologies. The process quality can be evaluated using spectroscopic techniques. In the present investigation, four different types of Q‐switched solid‐state lasers (with different beam parameters), namely, a lamp‐pumped Nd:YAG laser operating at 1064 nm, a lamp‐pumped Nd:YAG laser operating at second harmonically generated 532 nm, a diode‐pumped Nd:YVO₄ laser operating at 1064 nm and a diode‐pumped Nd:YAG laser operating at 1064 nm, have been employed for the processing of a single‐crystal, gem‐quality, natural diamond. The main objective behind the selection of these lasers with different beam parameters was to study the effect of wavelength, pulse width, pulse energy, peak power and beam quality factor (M² factor) on various aspects of processing (such as microcracking, material loss and cut surface quality) and their relative merits and demerits. The overall weight loss of the diamond and formation of microcracks during processing have been studied for the above four cases. The characteristics of the graphite formed during processing, elemental analysis, surface morphology of the cut surface and process dynamics have been studied using micro‐Raman spectroscopy and scanning electron microscopy (SEM). We observed that laser cutting of single‐crystal diamonds used for industrial applications can be accomplished without microcracking or surface distortion using Q‐switched Nd:YAG lasers. This allows direct processing without extensive postgrinding and polishing stages. Very efficient diamond processing is possible using diode‐pumped lasers, which results in the lowest possible breakage rate, good accuracy, good surface finish and low weight loss. From the micro‐Raman and SEM studies, it is concluded that the surface quality obtained is superior when diode‐pumped Nd:YVO₄ laser is used, owing to its extremely high peak power. The maximum graphite content is observed while processing with lamp‐pumped Nd:YAG laser at 532 nm. An overall comparison of all the laser sources leads to the conclusion that diode‐pumped Nd:YAG laser is a superior option for the efficient processing of natural diamond crystals. Copyright © 2006 John Wiley & Sons, Ltd.     

高速OCDM系统中的全光阈值技术分析

分析了高速OCDM系统中基于非线性光学环境(NOLM)和非线性放大(NALM)环境的全光阈值技术。考虑了NOLM环境输入脉冲峰值功率对其阈值判决功能的影响,数值模拟了由高非线性光纤构成的NOLM和NALM环境的脉冲整形和旁瓣抑制功能,并和实验结果进行了比较。结果表明基于NOLM和NALM环境的全光阈值技术都能有效地抑制40 Gbit/s的OCDM系统中的干扰噪声,最优的NOLM环境的脉冲峰值输入功率为2 W,而NALM环境只需要mW量级的脉冲峰值输入功率即能够更好地抑制干扰噪声。