Crossover between the thermodynamic and nonequilibrium scenarios of structural transformations of H<Subscript>2</Subscript>O I<Emphasis Type="Italic">h</Emphasis> ice during compression

A detailed investigation of different scenarios of structural transformations of H₂O Ih ice during compression to a pressure of 2 GPa in the temperature range from 77 to 200 K is performed. In the range of temperatures and pressures being treated, detailed data are obtained for the density and the shear modulus for different phases of ice including the hda, IX, and XII phases. The experimentally obtained correlations for the density and ultrasonic velocities, with due regard for the available data of structural investigations, are used to identify the transformation sequences Ih→hda (below 135 K), Ih→II→VI (above 165 K), and Ih→IX→VI (from 155 to 180 K). In the vicinity of the crystallization temperature of amorphous ice, i.e., at about 140 K, an anomalous transformation pattern is observed, which is interpreted as predominantly the Ih→XII phase transition. The temperature crossover is discussed between the mode of solid-phase amorphization (Ih→hda) and crystal-crystal transitions, as well as the metastable nature of IX ice and the mechanism of solid-phase amorphization.     

The influence of phase transitions in the Rb<Subscript>2</Subscript>CdI<Subscript>4</Subscript> ferroelastic on the exciton absorption spectrum

The parameters of the long-wavelength exciton band for Rb₂CdI₄ films are investigated in the temperature range 90–410 K. It is found that the Rb₂CdI₄ films undergo a sequence of phase transitions at temperatures T_c1=380 K (paraphase → incommensurate phase), T_c2=290 K (incommensurate phase → ferroelastic phase I), and T_c3 = 210 K (ferroelastic phase I → ferroelastic phase II). The parameters of the exciton band (such as the spectral position and the half-width) measured during heating and cooling of the Rb₂CdI₄ film differ significantly. This is especially true for the incommensurate phase. Upon heating of the incommensurate phase, the domain boundaries become frozen, whereas the cooling of this phase is accompanied by the generation of solitons and their pinning, which, in turn, results in a first-order phase transition at the temperature T_c2. It is revealed that the oscillator strength of the exciton band anomalously increases in the range of existence of commensurate phase I (T_c3<-T<-T_c2) due to ordering of the Rb₂CdI₄ crystal lattice.     

Phase transitions and metastable states in stressed SrTiO<Subscript>3</Subscript> films

The sequence of the ground states in SrTiO₃ films subjected to epitaxial strain and fixed mechanical stress in the [001] and [110] directions is calculated from first principles within the density functional theory. Under the fixed-strain conditions, an increase in the substrate lattice parameter results in the following sequence of the ground states: I4cm → I4/mcm → Ima2 → Cm → Fmm2 → Ima2(II). When moving to the fixed-stress conditions, the phase sequence changes significantly and depends on how the stress is applied. It is revealed that the simultaneous presence of two types of the lattice instability (the ferroelectric and structural ones) in strontium titanate leads to the formation of a whole system of metastable phases whose number increases abruptly under the fixed-stress conditions. The stability of these phases changes with pressure and phase transitions occur between them. The appearance of broad bistability regions in certain parts of the phase diagram enables the use of this phenomenon for developing nonvolatile phase-change memory.     

Hydrogen solubility in amorphous Mg<Subscript>0.6</Subscript>SiO<Subscript>2.6</Subscript> at high pressure

The solubility of hydrogen in amorphous Mg_0.6SiO_2.6 at a temperature of 250°C and pressures up to 75 kbar is studied using a quenching technique. The molar ratio H₂/formula unit is found to nonlinearly increase with pressure from x = 0.12 at P = 10 kbar to x = 0.303 at P = 75 kbar. An investigation of the quenched samples by Raman spectroscopy demonstrated that hydrogen dissolves in amorphous Mg_0.6SiO_2.6 in the form of H₂ molecules. X-ray diffraction and Raman studies showed that the hydrogenation of the samples is likely to be accompanied by a phase transition in the amorphous lattice of Mg_0.6SiO_2.6 at P ≈ 52.5 kbar to a denser amorphous modification.     

Pressure-induced superconductivity and structural transitions in Ba(Fe<Subscript>0.9</Subscript>Ru<Subscript>0.1</Subscript>)<Subscript>2</Subscript>As<Subscript>2</Subscript>

Electrical transport and structural characterizations of isoelectronically substituted Ba(Fe_0.9Ru_0.1)₂As₂ have been performed as a function of pressure up to ～ 30 GPa and temperature down to ～ 10 K using designer diamond anvil cell. Similar to undoped members of the AFe₂As₂ (A = Ca, Sr, Ba) family, Ba(Fe_0.9Ru_0.1)₂As₂ shows anomalous a-lattice parameter expansion with increasing pressure and a concurrent ThCr₂Si₂ type isostructural (I4/mmm) phase transition from tetragonal (T) phase to a collapsed tetragonal (cT) phase occurring between 12 and 17 GPa where the a is maximum. Above 17 GPa, the material remains in the cT phase up to 30 GPa at 200 K. The resistance measurements show evidence of pressure-induced zero resistance that may be indicative of high-temperature superconductivity for pressures above 3.9 GPa. The onset of the resistive transition temperature decreases gradually with increasing pressure before completely disappearing for pressures above ～ 10.6 GPa near the T-cT transition. We have determined the crystal structure of the high-T _c phase of Ru-doped BaFe₂As₂ to remain as tetragonal (I4/mmm) by analyzing the X-ray diffraction pattern obtained at 10 K and 9.7 ± 0.7 GPa, as opposed to inferring the structural transition from electrical resistance measurement, as in a previous report [S.K. Kim, M.S. Torikachvili, E. Colombier, A. Thaler, S.L. Bud’ko, P.C. Canfield, Phys. Rev. B 84, 134525 (2011)].     

Raman scattering spectroscopy of inclusions of carbon in Al<Subscript>2</Subscript>O<Subscript>3</Subscript> films and its solid solutions with HfO<Subscript>2</Subscript>

We apply Raman scattering spectroscopy to study the nature of carbon inclusions in Al₂O₃ and (HfO₂) _x (Al₂O₃)_{1 ? x} films deposited using volatile complex compounds. Raman spectra of the films under investigation contain D and G vibrational modes, which indicate that carbon clusters of the sp ² configuration tend to form in the films. We estimate the size of clusters from the integrated intensity ratio I _D /I _G and find it to be in the range of 14–20 Å. The content of hydrogen in carbon clusters is calculated from the height of the photoluminescence pedestal and is found to vary from 14 to 30 at % depending on the regime of the film’s synthesis.     

Structure,ionic conduction,and phase transformations in lithium titanate Li<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>12</Subscript>

The spinel structure of lithium titanate Li₄Ti₅O₁₂ is refined by the Rietveld full-profile analysis with the use of x-ray and neutron powder diffraction data. The distribution and coordinates of atoms are determined. The Li₄Ti₅O₁₂ compound is studied at high temperatures by differential scanning calorimetry and Raman spectroscopy. The electrical conductivity is measured in the high-temperature range. It is shown that the Li₄Ti₅O₁₂ compound with a spinel structure undergoes two successive order-disorder phase transitions due to different distributions of lithium atoms and cation vacancies (□, V) in a defect structure of the NaCl type: (Li)_8a[Li_0.33Ti_1.67]_16dO₄ → [Li□]_16c[Li_1.33Ti_1.67]_16dO₄ → [Li_1.33□_0.67]_16c[Ti_1.67□_0.33]_16dO₄. The low-temperature diffusion of lithium predominantly occurs either through the mechanism ... → Li(8a) → V(16c) → V(8a) → ... in the spinel phase or through the mechanism ... → Li(16c) → V(8a) → V(16c) → ... in an intermediate phase. In the high-temperature phase, the lithium cations also migrate over 48f vacancies: ... Li(16c) → V(8a, 48f) → V(16c) → ....     

Ab initio study of I<Subscript>2</Subscript> and T<Subscript>2</Subscript> stacking faults in C14 Laves phase MgZn<Subscript>2</Subscript>

Based on the synchroshear mechanism, the formation of intrinsic stacking fault I ₂ and twin-like stacking fault T ₂ in C14 Laves phases has been modeled in detail and the generalised stacking fault energy curve of I ₂ and T ₂ for C14 Laves phase MgZn₂ has been calculated from first-principles. The results demonstrate that the unstable stacking fault energy of I ₂ by synchroshear is still very large, and the stable stacking fault energy of I ₂ is higher in comparison with pure Mg implying that the formation of I ₂ stacking fault in MgZn₂ is difficult. Starting with the I ₂ configuration, the T ₂ stacking fault can be formed by an additional synchroshear. The unstable and stable stacking fault energies of T ₂ are only slightly larger than those of I ₂, implying that the formation of T ₂ may be essentially similar to that of I ₂. From the obtained generalised stacking fault energy, the relevant deformation mechanism of MgZn₂ is also discussed. Finally, the electronic structure during synchroshear process is further studied.     

Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

Exponential Increase in the Resistivity upon Cooling and Superconductivity in Indium-Doped Pb<Subscript>0.45</Subscript>Sn<Subscript>0.55</Subscript>Te

We have analyzed the temperature and magnetic-field dependences of resistivity ρ(T, H) of semiconducting compound Pb_0.45Sn_0.55Te doped with 5 at % In under a hydrostatic compression at P < 12 kbar. It is found that the temperature dependence ρ(T) at all pressures at T < 100 K is exponential with the activation energy decreasing upon an increase in pressure; this is accompanied with a superconducting transition on the ρ(T) and ρ(H) dependences at P > 4.8 kbar at T > 1 K (T _c = 1.72 K at a level of 0.5ρ _N at P = 6.8 kbar). We consider the model describing the low-temperature “dielectrization” of the semiconducting solid solution and the formation of the superconducting state upon an increase in the hydrostatic compression P > 4 kbar.     

Crystallographic characteristics and phase transitions in the [N(C<Subscript>2</Subscript>H<Subscript>5</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>CdBr<Subscript>4</Subscript> crystal in the low-temperature range

The results of x-ray structural studies of the [N(C₂H₅)₄]₂CdBr₄ crystal at low temperatures are presented. The unit cell parameters and the thermal expansion coefficients along the main crystallographic directions are measured at temperatures in the range from 90 to 320 K. The integrated intensities of the diffraction reflections are investigated as a function of the temperature. It is shown that the curves a = f(T), c = f(T), I ₅₀₀ = f(T), and I ₀₀₆ = f(T) at temperatures T ₁ ≈ 174 K and T ₂ ≈ 226 K exhibit anomalies in the form of abrupt changes in the lattice parameters and the diffraction reflection intensities. This indicates that the [N(C₂H₅)₄]₂CdBr₄ crystal undergo phase transitions at these temperatures. Moreover, there is an anomaly in the form of a small maximum at the temperature T ₃ = 293 K.     

Optical 4<Emphasis Type="Italic">f</Emphasis>-4<Emphasis Type="Italic">f</Emphasis> transitions in multiferroic HoMnO<Subscript>3</Subscript>

In the absorption spectra of the hexagonal single-crystal manganite HoMnO₃ in the paramagnetic ferroelectric state, lines near 1.1 and 2.0 μm were observed associated with the transitions ⁵ I ₈ → ⁵ I ₆ and ⁵ I ₈ → ⁵ I ₇, respectively, within the 4f ¹⁰ configuration of the Ho³⁺ ion. At T = 80 K, to the ⁵ I ₈ → ⁵ I ₇ transition corresponds one band at 1.9 μm for both polarizations E ∥ c and E ⊥ c. As the temperature increases from 80 to 293 K, a low-energy band with a peak at 2.04 μm for E ⊥ c and a peak at 2.07 μm for E ∥ c arises associated with transitions from an excited Stark level of the ground ⁵ I ₈ multiplet to the Stark levels of the ⁵ I ₇ multiplet and with an increase in the population of the initial Stark level, the energy of which is ～100 K.     

Investigation of the conditions of efficient I*<Subscript>2</Subscript> (342 nm) luminescence in a barrier discharge in a Kr-I<Subscript>2</Subscript> mixture

The energy and spectral characteristics of a barrier discharge in a mixture of iodine vapor with krypton have been investigated theoretically and experimentally. The emission spectrum consists of the single I*₂ molecular band D′ → A′ peaking at 342 nm, the iodine resonance line at 206.2 nm, and the group of bands corresponding to iodine emission. The highest intensity of the I*₂ (342 nm) band was obtained at a mixture pressure near 450 Torr. A mean output power and an efficiency of 550 mW and 1.6%, respectively, have been achieved. It is shown that, for the I₂ barrier-discharge excilamp, the homogeneous, rather than filamentary form of discharge glow is optimal from the viewpoint of the highest mean output power. The maximal calculated value of the emission efficiency for the 342-nm band was 5%. The main processes determining energy losses in plasma have been found, and ways to increase the efficiency of emission in the D′ → A′ band of the I*₂ molecule have been proposed.     

Mechanisms of ionization of <Emphasis Type="Italic">F</Emphasis><Subscript>2</Subscript>-centers in laser media on the basis of LiF crystals

F₂ color centers with a superhigh concentration (5000-cm^–1 absorption coefficient at 450 nm) were formed by high-density electron beams in a layer of LiF crystals of micrometer thickness. The F₂-centers excited by high-power nanosecond wide-band optical pulses (the “soft” pumping regime) efficiently amplified the laser radiation and showed high stability under these conditions. A low stability of F₂-centers to laser radiation (the “hard” excitation regime) is explained by the dissociation of (F ₂ ⁺ , F^–) pairs induced by two-step ionization of F₂-centers: (2hν > 4.5 eV) → F₂ → (F₂)* → F ₂ ⁺ + e; F + e → F^–; F ₂ ⁺ + F^– → 3F.     

X-ray study of [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>ZnCl<Subscript>4</Subscript> at low temperatures

The unit cell parameters a, b, and c of [N(CH₃)₄]₂ZnCl₄ have been measured by x-ray diffraction in the temperature range 80–293 K. Temperature dependences of the thermal expansion coefficients α_a, α_b, and α_c along the principal crystallographic axes and of the unit cell thermal expansion coefficient α_V were determined. It is shown that the a=f(T), b=f(T), and c=f(T) curves exhibit anomalies in the form of jumps at phase transition temperatures T₁=161 K and T₂=181 K and that the phase transition occurring at T₃=276 K manifests itself in the a=f(T) and b=f(T) curves as a break. A slight anisotropy in the coefficient of thermal expansion of the crystal was revealed. The phase transitions occurring at T₁=161 K and T₂=181 K in [N(CH₃)₄]₂ZnCl₄ were established to be first-order.     

Rotation of the inner shell in a C<Subscript>20</Subscript>@C<Subscript>80</Subscript> nanoparticle

The stability of a C₂₀@C₈₀ nanoparticle and the rotation of its inner shell are studied theoretically within the tight-binding approximation. It is found that the C₂₀ skeleton in the free state is described by space group D_3d; in the case where C₂₀ is placed into the C₈₀(I _h ) fullerene field, the space group of C₂₀ is raised to I _h due to isomerization. The total energy surface of the C₂₀@C₈₀ compound is scanned over two rotation angles. Based on an analysis of the surface relief and energy isoline map, orientational melting of the nanoparticle is predicted. A nanoparticle gyroscope—C₂₀ rotating in the field of C₈₀ at a certain relative orientation and energy supply—is also predicted to exist.     

Thermophysical studies of the phase transitions in (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>NbOF<Subscript>6</Subscript> crystals

The thermophysical properties of oxyfluoride (NH₄)₃NbOF₆ were studied in detail over wide ranges of temperatures and pressures. At atmospheric pressure, a sequence of four structural phase transitions was established with the following changes in entropy: ΔS ₁ = Rln 2.7, δS ₂ = Rln38.3, ΔS ₃ = 0.08R, and ΔS ₄ = 0.17R. An external hydrostatic pressure was found to narrow the region of existence of the initial cubic phase. A triple point was detected in the p-T diagram; at a pressure above 0.07 GPa, the transition between the tetragonal and monoclinic phases occurs through a distorted high-pressure phase.     

Optical characteristics of plasma of I*<Subscript>2</Subscript>, Cl*<Subscript>2</Subscript>, Br*<Subscript>2</Subscript> halogen dimer barrier-discharge excilamps

Barrier-discharge excilamps operating in homonuclear chlorine, bromine, and iodine and their mixtures with inert gases have been studied. The spectral and energy characteristics of the barrier-discharge plasma have been obtained. The conditions have been determined at which the band D′ → A′ predominates in the spectra of molecules I*₂ (342 nm), Cl*₂ (257.8 nm), and Br*₂ (291 nm). The efficiencies of I₂, Cl₂, and Br₂ excilamps were found to be 1.6, 2, and 3.8%.     

Transport and magnetic properties of a Zn<Subscript>0.1</Subscript>Cd<Subscript>0.9</Subscript>GeAs<Subscript>2</Subscript> + 10 wt % MnAs composite with magnetic clusters at high pressure

The temperature (T = 77–420 K) dependences of the electrical resistivity and the magnetization, the magnetic-field (H ≤ 5 kOe) and pressure (P ≤ 7 GPa) dependences of the resistivity, the Hall coefficient, and the magnetization have been measured in the Zn_0.1Cd_0.9GeAs₂ + 10 wt % MnAs composite with the Curie temperature T _C = 310 K. The magnetoresistive effect has been observed at high hydrostatic pressure to 7 GPa. At nearly room temperature, the pressure dependence of the magnetization demonstrated a transition from the ferromagnetic to paramagnetic state at P ~ 3.2 GPa that was accompanied by the semiconductor–metal phase transition.     

Elastic properties of D<Subscript>2</Subscript>O ices in solid-state amorphization and transformations between amorphous phases

Nonequilibrium phase transformations in D₂O ices, including the solid-state amorphization of ice 1h (1h-hda) and the heating-induced transition cascade hda-lda-1c-1h from high-density amorphous (hda) ice to low-density amorphous (lda) ice followed by crystallization in cubic ice 1c and phase transition to ordinary hexagonal ice 1h, were studied using an ultrasonic technique. It has been shown that, as in H₂O ice, the softening of a crystal lattice or an amorphous network precedes nonequilibrium transformations. However, noticeable isotopic differences in the behavior of the elastic properties of H₂O and D₂O, in particular, their 1h and hda modifications, call for a more detailed study of the structural features of these H₂O and D₂O phases.