新型GeSe2-In2Se3-AgI玻璃性能研究

采用传统熔融-淬冷法制备了一系列新型(100-x) (4GeSe₂-In₂Se₃) -xAgI(x=20,30,40 mol%)硫系玻璃样品.利用X射线衍射分析、差热分析、可见-近红外吸收光谱、红外透过光谱、喇曼分析等技术手段研究了该玻璃系统的组成、结构、热稳定性和光学特性等.利用Tauc方程计算出了样品的间接带隙;测试了部分样品在不同升温速率下的差示扫描量热曲线,并采用Kissinger法计算了玻璃样品的析晶活化能.X射线衍射数据表明,该玻璃体系在较宽的组分范围内有良好的非晶特性,成玻范围较宽;差热分析和析晶动力学研究表明,玻璃样品70(4GeSe₂-In₂Se₃)-30AgI具有较好的热稳定性(ΔT=114℃)和较高的活化能(E_a=320.4 kJ/mol).随着AgI含量的增加,玻璃的短波吸收限蓝移,并且光学带隙有增大的趋势.此外,红外透过光谱分析表明该玻璃体系具有良好的红外透过性能,其红外截止波长不会随着AgI含量的增加而发生明显变化,皆为16μm左右.     

新型GeSe2-In2Se3-AgI玻璃性能研究

采用传统熔融-淬冷法制备了一系列新型(100-x)(4GeSe2-In2Se3)-xAgI(x=20,30,40mol%)硫系玻璃样品.利用X射线衍射分析、差热分析、可见-近红外吸收光谱、红外透过光谱、喇曼分析等技术手段研究了该玻璃系统的组成、结构、热稳定性和光学特性等.利用Tauc方程计算出了样品的间接带隙;测试了部分样品在不同升温速率下的差示扫描量热曲线,并采用Kissinger法计算了玻璃样品的析晶活化能.X射线衍射数据表明,该玻璃体系在较宽的组分范围内有良好的非晶特性,成玻范围较宽;差热分析和析晶动力学研究表明,玻璃样品70(4GeSe2-In2Se3)-30AgI具有较好的热稳定性(ΔT=114℃)和较高的活化能(Ea=320.4kJ/mol).随着AgI含量的增加,玻璃的短波吸收限蓝移,并且光学带隙有增大的趋势.此外,红外透过光谱分析表明该玻璃体系具有良好的红外透过性能,其红外截止波长不会随着AgI含量的增加而发生明显变化,皆为16μm左右.     

GeS2-Ga2S3-CdS透明表面微晶玻璃的二阶非线性光学效应

采用热诱导法制备了GeS2-Ga2S3-CdS硫系微晶玻璃,X射线衍射(XRD)、透射光谱、扫描电子显微镜(SEM)测试结果表明,获得了含CdGa2S4微晶的透明表面微晶玻璃。采用Maker条纹法研究了微晶玻璃的二次谐波(SHG)效应,结果表明玻璃中的CdGa2S4微晶诱导了二次谐波效应的产生。CdGa2S4微晶在玻璃表面择优生长时,破坏玻璃的各向同性,可获得两个包络的Maker条纹,且入射角在±(35°~50°)左右时,二次谐波的相对强度出现最大值,二阶非线性强度最大可为α-石英单晶的8倍;CdGa2S4微晶在玻璃表面无择优生长时,由于玻璃表面较大的CdGa2S4晶粒的散射作用,只能获得一个包络的Maker条纹,即入射角为0°时,二次谐波的相对强度出现最大值。     

Ge-Sb-S硫系玻璃的光谱特性及网络结构阈值行为研究

用熔融淬冷技术制备了两组Ge-Sb-S三元体系的硫系玻璃,获得了在不同Ge和Sb元素含量下制备所得玻璃的一系列物化及光谱学特性,并结合拉曼光谱从玻璃微观结构层面对光学特性的变化进行了系统的分析。利用基于平均配位数(Z)的玻璃网络限制理论直观地描述了网络结构的变化趋势,发现当玻璃的Z值超过2.6时,其相应的拉曼谱上会有明显的新峰出现,说明玻璃的网络结构产生了阈值行为且结构组成发生了明显变化,具体表现为非金属化合键的减少和金属化合键的增加。玻璃网络中新功能团的形成改变了玻璃整体键能的大小,进而影响了玻璃的能带结构,从而玻璃的光学带隙(E_opg)值也随着Z值的变化表征出相应的阈值行为。     

新型GeS_2-Ga_2S_3-KI玻璃性能的研究

用传统熔融淬冷法制备了新型硫卤玻璃(100-x)(80GeS2-20Ga2S3)-xKI(x=0,10,20mol%).利用差热分析、可见/近红外吸收光谱、红外透射光谱等技术对准三元硫卤玻璃体系GeS2-Ga2S3-KI的组成、结构和性能关系进行了研究.分析结果表明:GeS2-Ga2S3-KI三元系统玻璃具有较宽的玻璃形成区;当KI的含量为10mol%时,玻璃热稳定性最好;随着KI的加入,玻璃的红外截止波长无明显变化,皆为12.5μm;然而随着局域电位场的增大,玻璃的短波吸收限向短波方向发生了移动,光学带隙存在增大趋势.     

X-Ray Fluorescence Determination of the Composition of Chalcogenide Glasses

A procedure of x-ray spectroscopic fluorescence determination of the composition of chalcogenide glasses As _x S_100–x is developed, and its metrological characteristics are established. The magnitude of relative standard deviation in determining the content of the components does not exceed 0.003, and the results of x-ray spectroscopic fluorescence analysis (RSFA) agree well with the data of a gravimetric method.     

Er~(3+)掺杂新型GeS_2-In_2S_3-CsI玻璃上转换光谱性质研究

用熔融淬冷法制备了掺Er3+的80GeS2-10In2S3-10CsI(mol%)硫卤玻璃样品,测试了样品的热学稳定性、喇曼光谱、吸收光谱以及上转换光谱,分析了Er3+离子在该玻璃中的上转换发光机理.应用Judd-Ofelt理论计算分析了Er3+离子在该样品中的强度参量Ωt(t=2,4,6)、自发辐射跃迁几率A、荧光分支比β以及辐射寿命τrad等光谱参量.在980nmLD泵浦激发下,首次在该种玻璃中观察到强烈的绿光(526nm、549nm),分别对应于2H11/2→4I15/2和4S3/2→4I15/2的跃迁,其中549nm处绿光较强.549nm处上转换荧光寿命为0.34ms,量子效率为69%.同时研究了绿光(526nm、549nm)上转换发光强度随泵浦激发功率的变化,其发光曲线拟合斜率分别为1.71和2.03,表明绿光是双光子吸收过程.研究结果表明:掺Er3+的80GeS2-10In2S3-10CsI硫卤玻璃是一种上转换绿光激光器的潜在基质材料.     

Broadband Infrared Luminescence from Bismuth-Doped GeS2--Ga2S3 Chalcogenide Glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2Sa chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS2-2OGa2 Sa：O.fBi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum （FWHM） is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2Sa chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi＋. Raman scattering is also conducted to claxify the structure of glasses. These Bi-doped GeS2 Ga2Sa chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.     

Photoinduced Effects in the Luminescence Spectra of Chalcogenide Glasses

We investigate photostructural transformations in glassy Ge–S films by the method of luminescence and Raman scattering of light. The appearance of a new shortwave band in the luminescence spectra of sulfurenriched Ge–S specimens as a result of irradiation by a He–Cdlaser light and subsequent relaxation is discussed. To explain the results obtained, a model of photostructural transformations is invoked, in which the decisive role is assigned to solitary electrons of the chalcogen atoms.     

Compositional Trends of Radiation-Induced Effects in Ternary Systems of Chalcogenide Glasses

The effect of γ-irradiation on the optical transmittance spectra of pseudobinary stoichiometric and non-stoichiometric cuts of ternary systems of chalcogenide glasses was studied. The application of chemical-bond approach is proposed to explain the features of compositional dependencies of radiation-induced effects in these materials. It is shown that free volume concept must be taken into consideration at the presence of different radiation-sensitive structural units. The creation processes of coordination defects connected with the formation of free volume and coupled with the capability of the constituent atoms to passivation are the main factors determining the magnitude of the radiation-induced effects in chalcogenide glasses.     

双卤化物共掺新型硫系多光谱玻璃的制备及性能

利用传统熔融-淬冷工艺制备了65GeS_2-15Ga_2S_3-(20-x)CsCl-xCsI(x=0,5,10,15,20)系列硫卤玻璃;通过测试该系列玻璃样品的密度、显微硬度、可见/近红外吸收光谱、红外透射光谱、喇曼谱、XRD衍射谱、玻璃转变温度等,对其进行了系统研究.结果表明:该系列玻璃具有较宽的成玻范围,在0.42~12μm范围内具有良好的透过率;随着CsI含量(mol%)的增加,玻璃的密度逐渐增大;随着CsCl含量(mol%)的增加,光学带隙以及硬度逐渐增大;玻璃样品的玻璃转变温度随Cl~-、I~-的共掺比例发生明显变化,当Cl~-(mol%):I-(mol%)=1时,玻璃转变温度最低.     

Large and Ultrafast Third-Order Nonlinear Optical Properties of Ge-S Based Chalcogenide Glasses

We report ultrafast third-order nonlinear optical （NLO） properties of several chalcogenide glasses GeSx （x = 1.8, 2.0, 2.5） measured by femtosecond time-resolved optical Kerr gate technique at 82Ohm. The third-order nonlinear susceptibility of GeS1.8 glass is determined to be as large as 1.41 ×10^-12 esu, which is the maximum value of the third order nonlinear susceptibility Х^（3） for the three compositions investigated. The symmetric Gauss profiles of optical Kerr signals reveal the nature of ultrafast nonlinear response of these samples, which are originated from the ultrafast polarization of the electron clouds. By detailed microstructural analysis of these glasses based on the chain-crossing model （CCM） and the random-covalent-network model （RCNM）, it can be concluded that Х^（3） value of GeSx glasses can be enhanced greatly by S-S covalent bonds or S3 Ge-GeS3 ethane-l＆e units.     

新型远红外Ge-Te-Se-Sn硫系玻璃的热学与光学性质研究

采用熔融淬冷法制备了新型远红外Te基硫系玻璃Ge20-xTe65 Se15 Snx(x=0,2,4).在Ge-Te-Se玻璃的基础上,通过引入重金属Sn,研究其对玻璃组成、结构和性能的影响.测试了样品的中红外热成像、X射线衍射(XRD)图谱、差热分析曲线(DSC)、可见/近红外吸收光谱、红外透射光谱.利用经典的Tauc...     

掺Yb3+激光玻璃光谱特性研究

采用高温熔融工艺制备了Yb3 掺杂激光玻璃.测试了玻璃的吸收光谱和发射光谱,计算了Yb3 的积分吸收截面和受激发射截面及荧光寿命等参数.玻璃光谱曲线表明:吸收主峰位于975.35 nm,在900～962 nm范围内有一较为弥散的吸收次峰,中心波长为939.17nm;荧光主峰位于977.15 nm,荧光次峰位于997.42 m;随着样品厚度的增加,荧光次峰强度和荧光主峰强度在增大,荧光次峰波长和荧光主峰波长向长波方向移动;荧光有效线宽从34.64 nm增大到54.50 nm;荧光寿命由1.04 ms减小为1.00 ms.     

Frequency dependent conductivity in As2Se3 and As2Se3 + 15% Sb

Dc and ac measurements were performed on bulk samples of undoped and 15% Sb doped As₂Se₃ as a function of temperature (90–400 K) and frequency (10³–10⁶ Hz). The dc results show an activated conductivity dependence on temperature with an activation energy of 0.8 eV above room temperature. The ac results give a temperature dependent frequency exponent s. The temperature dependence of G _ac is discussed in terms of the mechanisms involved. Results are compared with the predictions of the Quantum Mechanical Tunnelling and Correlated Barrier Hopping models. It is found that doping increases the dc conductivity but has no effect on the ac conductivity.     

Investigation of the optical properties of In2Se3xTe3(1−x) single crystals

In [1] it was shown that when In₂Te₃ interacts with In₂Se₃ in samples which are mainly indium telluride, substitutional solid solutions having the zinc blende structure are formed in the concentration range 0–40 mol.% In₂Se₃ (0 x 0.4). The solubility of the low temperature hexagonal modification-In₂Se₃ did not exceed 2 mol.%; formation of solid solutions having the medium temperature hexagonal modification of-In₂Se₃ was observed for the interval 0.9 x 0.95. These published data [2, 3] are concerned with electrical properties of the crystals. In this paper the results of an investigation of the optical properties of In₂Se_3xTe_3(1–x) single crystals for temperatures between 300 and 77°K are presented. Crystals suitable for optical measurements were obtained by a modified Bridgman method, which included vibarational mixing. All the samples were n-type. The resistivity varied from 10⁶ to 10⁴ ohm · cm in the course of the transition from-In₂Te₃ to the solid solutions (0 x 0.4).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 65–68, May, 1972.