Enhanced Performance of Solution‐Processed TESPE‐ADT Thin‐Film Transistors

A solution‐processed anthradithiophene derivative, 5,11‐bis(4‐triethylsilylphenylethynyl)anthradithiophene (TESPE‐ADT), is studied for use as the semiconducting material in thin‐film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin‐coating and drop‐casting) on various gate dielectrics as well as additional post‐treatment are employed on thin films of TESPE‐ADT, and p‐channel OTFT transport with hole mobilities as high as ～0.12 cm² V^?1 s^?1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.     

n‐Channel Organic Transistors Processed from Halogen‐Free Solvents: Solvent Effect on Thin‐Film Morphology and Charge Transport

Non‐chlorinated solvents are highly preferable for organic electronic processing due to their environmentally friendly characteristics. Four different halogen‐free solvents, tetrafuran, toluene, meta‐xylene and 1,2,4‐trimethylbenzene, were selected to fabricate n‐channel organic thin film transistors (OTFTs) based on 3‐hexylundecyl substituted naphthalene diimides fused with (1,3‐dithiol‐2‐ylidene)malononitrile groups (NDI3HU‐DTYM2). The OTFTs based on NDI3HU‐DTYM2 showed electron mobility of up to 1.37 cm²·V^?1·s^?1 under ambient condition. This is among the highest device performance for n‐channel OTFTs processed from halogen‐free solvents. The different thin‐film morphologies, from featureless low crystalline morphology to well‐aligned nanofibres, have a great effect on the device performance. These results might shed some light on solvent selection and the resulting solution process for organic electronic devices.     

Crystal Engineering of Dual Channel p/n Organic Semiconductors by Complementary Hydrogen Bonding

The supramolecular arrangement of organic semiconductors in the solid state is as critical for their device properties as the molecular structure, but is much more difficult to control. To enable supramolecular design of semiconducting materials, we introduced dipyrrolopyridine as a new donor semiconductor capable of complementary hydogen bonding with naphthalenediimide acceptors. Through a combination of solution, crystallographic, and device studies, we show that the self‐assembly driven by H bonding a) modulates the charge‐transfer interactions between the donor and acceptor, b) allows for precise control over the solid‐state packing, and c) leads to a combination of the charge‐transport properties of the individual components. The predictive power of this approach was demonstrated in the synthesis of three new coassembled materials which show both hole and electron transport in single‐crystal field‐effect transistors. These studies provide a foundation for advanced solid‐state engineering in organic electronics, capitalizing on the complementary H bonding.     

Solution‐Based Direct Growth of Organic Crystals on an Active Channel Region for Printable Bottom‐Contact Organic Field‐Effect Transistors

The growth and self‐organization of organic crystals between a source (S) and drain (D) electrode by a method based on the use of a micropipette and isothermal evaporation of the solvent in a two‐liquid system led to the formation of organic‐crystal transistors (see polarized optical micrograph). The method is similar to ink‐jet printing and should be suitable for the fabrication of low‐cost and mass‐producible printed electronic devices.

     

A Solution‐Processed Air‐Stable Perylene Diimide Derivative for N‐type Organic Thin Film Transistors

For future all‐soluble organic thin film transistor (OTFT) applications, a new soluble n‐type air‐stable perylene diimide derivative semiconductor material with (trifluoromethyl)benzyl groups (TC–PDI–F) is synthesized. The film is formed by spin‐coating in air and optimized for OTFT fabrications. The transistor characteristics and air‐stability of the TC–PDI–F OTFTs is measured to investigate the feasibility of using solution‐processed TC–PDI–F for future OTFT applications. For all‐solution OTFT process applications, the transistor characteristics are demonstrated by using TC–PDI–F as an n‐type semiconductor material and liquid‐phase‐deposited SiO₂ (LPD–SiO₂) as a gate dielectric material. All processes (except material synthesis and electrode deposition) and electrical measurements are conducted in air.     

Phenacyl–Thiophene and Quinone Semiconductors Designed for Solution Processability and Air‐Stability in High Mobility n‐Channel Field‐Effect Transistors

Electron‐transporting organic semiconductors (n‐channel) for field‐effect transistors (FETs) that are processable in common organic solvents or exhibit air‐stable operation are rare. This investigation addresses both these challenges through rational molecular design and computational predictions of n‐channel FET air‐stability. A series of seven phenacyl–thiophene‐based materials are reported incorporating systematic variations in molecular structure and reduction potential. These compounds are as follows: 5,5′′′‐bis(perfluorophenylcarbonyl)‐2,2′:5′,‐ 2′′:5′′,2′′′‐quaterthiophene ( 1 ), 5,5′′′‐bis(phenacyl)‐2,2′:5′,2′′: 5′′,2′′′‐quaterthiophene ( 2 ), poly[5,5′′′‐(perfluorophenac‐2‐yl)‐4′,4′′‐dioctyl‐2,2′:5′,2′′:5′′,2′′′‐quaterthiophene) ( 3 ), 5,5′′′‐bis(perfluorophenacyl)‐4,4′′′‐dioctyl‐2,2′:5′,2′′:5′′,2′′′‐quaterthiophene ( 4 ), 2,7‐bis((5‐perfluorophenacyl)thiophen‐2‐yl)‐9,10‐phenanthrenequinone ( 5 ), 2,7‐bis[(5‐phenacyl)thiophen‐2‐yl]‐9,10‐phenanthrenequinone ( 6 ), and 2,7‐bis(thiophen‐2‐yl)‐9,10‐phenanthrenequinone, ( 7 ). Optical and electrochemical data reveal that phenacyl functionalization significantly depresses the LUMO energies, and introduction of the quinone fragment results in even greater LUMO stabilization. FET measurements reveal that the films of materials 1 , 3 , 5 , and 6 exhibit n‐channel activity. Notably, oligomer 1 exhibits one of the highest μ_e (up to ≈0.3 cm² V^?1 s^?1) values reported to date for a solution‐cast organic semiconductor; one of the first n‐channel polymers, 3 , exhibits μ_e≈10^?6 cm² V^?1 s^?1 in spin‐cast films (μ_e=0.02 cm² V^?1 s^?1 for drop‐cast 1 : 3 blend films); and rare air‐stable n‐channel material 5 exhibits n‐channel FET operation with μ_e=0.015 cm² V^?1 s^?1, while maintaining a large I_on:off=10⁶ for a period greater than one year in air. The crystal structures of 1 and 2 reveal close herringbone interplanar π‐stacking distances (3.50 and 3.43 Å, respectively), whereas the structure of the model quinone compound, 7 , exhibits 3.48 Å cofacial π‐stacking in a slipped, donor‐acceptor motif.     

Head‐to‐Tail Zig‐Zag Packing of Dipolar Merocyanine Dyes Affords High‐Performance Organic Thin‐Film Transistors

Attachment of bulky substituents at both thiophene donor (D) and thiazole acceptor (A) heterocycles of a dipolar (μ_g=10.4 D) D‐π‐A merocyanine dye affords a more than 1 Å expansion of the common antiparallel supramolecular dimer motif in the solid state, enabling very close π‐contacts (3.36 Å) to two other neighbor molecules on each of the two remaining π‐faces. This unusual packing motif leads to three‐dimensional percolation pathways for hole transport and affords thin‐film transistors with mobility up to 0.64 cm² V^?1 s^?1.     

Synthesis and Properties of Semiconducting Bispyrrolothiophenes for Organic Field‐Effect Transistors

A series of new highly soluble bispyrrolothiophenes were synthesized from vinyl azides by using transition‐metal‐catalyzed C?H‐bond functionalization. In addition to modifying the substituents present on the end‐pyrrolothiophene moieties, the arene linker in between the two units was also varied. The solution‐state properties and field‐effect‐transistor (FET) electrical behavior of these bispyrrolothiophenes was compared. Our investigations identified that the optical properties and oxidation potential of our compounds were dominated by the pyrrolothiophene unit with a λ_max value of approximately 400 nm and oxidation at approximately 1 V. FET devices constructed with thin films of these bispyrrolothiophenes were also fabricated by means of thin‐film solution processing. One of these compounds, a bispyrrolothiophene linked with benzothiodiazole, exhibits a mobility of approximately 0.3 cm² V^?1 s^?1 and the I_on/I_off value is greater than 10⁶.     

Synthesis,Structures, and Properties of Fused Thiophenes for Organic Field‐Effect Transistors

A series of fused thiophenes composed of fused α‐oligothiophene units as building blocks, end‐capped with either styrene or 1‐pentyl‐4‐vinylbenzene groups, has been synthesized through Stille coupling reactions. The compounds have been fully characterized by means of ¹H NMR spectrometry, high‐resolution mass spectrometry, and elemental analysis. The molecules present a trans–trans configuration between their double bonds, which has been verified and confirmed by Fourier‐transform infrared spectroscopy and single‐crystal X‐ray diffraction analysis. The X‐ray crystal structures showed π–π overlap and sulfur–sulfur interactions between the adjacent molecules. The decomposition temperatures were all found to be above 300 °C, indicating that compounds of this series possess excellent thermal stability. The fact that no phase transition occurs at low temperature indicates that they should be well‐suited for application in devices. Moreover, they possess low HOMO energy levels, based on cyclic voltammetry measurements, and suitable energy gaps, as determined from their thin‐film UV/Vis spectra. Thin‐film X‐ray diffraction analysis and atomic force microscopy revealed high crystallinity on supporting substrates. In addition, as the substrate temperature has a significant influence on the morphology and the degree of crystallinity, the device performance could be optimized by varying the substrate temperature. These materials were found to exhibit optimal field‐effect performance, with a mobility of 0.17 cm² V^?1 s^?1 and an on/off ratio of 10⁵, at a substrate temperature of 70 °C.     

Organic Thin Film Transistors Based on 2,3‐Dimethylpentacene and 2,3‐Dimethyltetracene

2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO₂/Si surface. Thin film transistors prepared on SiO₂/Si and n‐nonyltrichlorosilane‐modified SiO₂/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO₂/Si substrate gave the highest field‐effect mobility of 0.46 cm²/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm²/Vs.     

Tuning Redox Chemistry and Photophysics in Core‐Substituted Tetraazaperopyrenes (TAPPs)

Core substitution of tetraazaperopyrenes (TAPPs) has been achieved, and with it, considerable variation of their photo‐ and redox‐chemical properties. Through Suzuki cross coupling starting from the fourfold core‐brominated tetraazaperopyrene, aryl‐substituted TAPPs were synthesized, which displayed very high fluorescence quantum yields (up to 100 %) in solution. Besides the Suzuki reactions, Stille and Sonogashira cross‐couplings were also found to be suitable methods for core derivatization, as demonstrated in the syntheses of alkynyl‐substituted tetraazaperopyrene congeners. Furthermore, TAPPs incorporating intramolecular donor–acceptor combinations of aromatic units ( 8 , 9 ) were accessible by coupling the electron‐poor peropyrene core with electron‐rich aromatic units, which act as strong electron donors. Finally, C‐heteroatom coupling (O, S, N) gave rise to novel TAPP derivatives with strongly modified redox‐chemical behaviour and photophysics in the solid state as well in solution. In particular, TAPP derivatives displaying red fluorescence were obtained for the first time.     

An Air‐Stable Semiconducting Polymer Containing Dithieno[3,2‐b:2′,3′‐d]arsole

Arsole‐containing conjugated polymers are a practically unexplored class of materials despite the high interest in their phosphole analogues. Herein we report the synthesis of the first dithieno[3,2‐b;2′,3′‐d]arsole derivative, and demonstrate that it is stable to ambient oxidation in its +3 oxidation state. A soluble copolymer is obtained by a palladium‐catalyzed Stille polymerization and demonstrated to be a p‐type semiconductor with promising hole mobility, which was evaluated by field‐effect transistor measurements.     

Organic semiconductors for solution-processable field-effect transistors (OFETs)

The cost-effective production of flexible electronic components will profit considerably from the development of solution-processable, organic semiconductor materials. Particular attention is focused on soluble semiconductors for organic field-effect transistors (OFETs). The hitherto differentiation between "small molecules" and polymeric materials no longer plays a role, rather more the ability to process materials from solution to homogeneous semiconducting films with optimal electronic properties (high charge-carrier mobility, low threshold voltage, high on/off ratio) is pivotal. Key classes of materials for this purpose are soluble oligoacenes, soluble oligo- and polythiophenes and their respective copolymers, and oligo- and polytriarylamines. In this context, micro- or nanocrystalline materials have the general advantage of somewhat higher charge-carrier mobilities, which, however, could be offset in the case of amorphous, glassy materials by simpler and more reproducible processing.     

Novel Conjugated Polymers Based on Dithieno[3,2‐b:6,7‐b]carbazole for Solution Processed Thin‐Film Transistors

Two conjugated polymers (CPs) P‐tCzC12 and P‐tCzC16 comprising alternating dithieno[3,2‐b:6,7‐b]carbazole and 4,4′‐dihexadecyl‐2,2′‐bithiophene units have been designed and synthesized. Upon thermal annealing, they can form ordered thin films in which the polymer backbones dominantly adopted an edge‐on orientation respective to the substrate with a lamellar spacing of ≈24 Å and a π‐stacking distance of ≈3.7 Å. Organic thin‐film transistors (OTFTs) were fabricated by solution casting. A hole mobility of 0.39 cm² V⁻¹s⁻¹ has been demonstrated with P‐tCzC16. This value is the highest among the CPs containing heteroacenes larger than 4 rings.