Synthesis of thin dense titania films via an aqueous solution-gel method

Nanostructured titanium dioxide films have been reported to be used in many applications ranging from optics and solar energy devices to gas sensors. This work describes the synthesis of nanocrystalline titania films via an aqueous solution-gel method. The thin films are deposited by spin coating an aqueous citratoperoxo-Ti(IV)-precursor solution onto a silicon substrate. The influence of processing parameters like Ti⁴⁺ concentration and crystallization temperature on the phase formation, crystallite size and surface morphology of the films is studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atomic force microscopy (AFM). Furthermore, the effect of successive layer deposition on the film thickness of the resulting films is studied by means of cross sectional SEM. SEM and TEM micrographs clearly show that, after optimization of the process parameters, thin, smooth, dense nanocrystalline films are synthesized in a reproducible manner. The films are composed of 15–20 nm grains. At higher crystallization temperatures (600, 650°C) also larger particles (40–70 nm) are present. XRD data reveal that a phase pure anatase film is formed at 450°C. Crystallization temperatures equal to or higher than 600 °C however give rise to the formation of both the anatase and rutile crystalline phases. The smoothness of the films is proved by their very low rms surface roughness (≤1.1 nm) measured by AFM.     

Electrodeposition of selenium from 1-ethyl-3-methyl-imidazolium trifluromethylsulfonate

The electrodeposition of thin selenium (Se) films from 1-ethyl-3-methyl-imidazolium trifluromethylsulfonate at room and elevated temperatures on gold and on copper substrates was studied under open-air conditions. The effect of bath temperature on the composition and structure of the deposited films was examined using cyclic voltammetry, chemical analysis and X-ray diffraction analysis. The obtained results showed that on gold substrate and at room temperature, a reddish Se film grows mainly in amorphous, monoclinic, rhombohedral and hexagonal structure, while at temperatures ≥90 °C, a grayish film of hexagonal and rhombohedral structure is deposited. Photoelectron spectroscopy shows that both films consist of pure Se with only slight surface contaminations by remnants from the electrodeposition. Due to the differences in phase structure and the presence of the monoclinic phase, the reddish films showed higher light absorbance. The band gap of the reddish film is close to that of pure amorphous Se reported in literature. Deposition on copper substrate leads to formation of CuSe and CuSe₂ at room temperature and at 70 °C, respectively.     

Effect of post‐deposition annealing on surface morphology and gas sensing properties of palladium phthalocyanine thin films

The effect of post‐deposition annealing on surface morphology and gas sensing properties of palladium phthalocyanine (PdPc) nanostructured thin films has been studied. PdPc thin films were deposited on polyborosilicate substrate by thermal evaporation technique at room temperature. The surface morphology of thin films was investigated by SEM, X‐ray diffraction, and optical absorption. X‐ray diffraction patterns showed a phase transition from α to β based on post‐deposition annealing at temperatures above 200 °C. The SEM and optical absorption confirmed that annealing strongly influenced the surface morphology of nanostructured thin films. Sandwich devices (Au|PdPc|Al) were fabricated and exposed to different concentrations of NO₂ and NH₃ as oxidizing and reducing gases at different temperatures, and the sensitivity of devices were obtained versus gases. Obtained results showed α‐PdPc thin film devices had higher sensitivity in comparison with devices in β‐phase. In particular, it was found that the sensitivity of devices is temperature dependent and the best operating temperature range of devices was measured at about 90–100 °C. Devices showed good reversibility, response, and recovery time at room temperature. Finally, the stability of sensors was investigated for a period of about 1 year; results showed that the sensors were stable for 2 months and lost about 30% of their sensitivity after 1 year. Copyright © 2012 John Wiley & Sons, Ltd.     

Preparation of ordered mesoporous TiO2 thin film and its application in methanol catalytic combustion

Ordered mesoporous titania thin films were synthesized by evaporation induced self‐assembly process in the presence of Pluronic block copolymers P123 (EO₂₀‐PO₇₀‐EO₂₀). The influence of several experimental parameters, including aging humidity, aging temperature, substrate properties and methods for organic templates removal, on the mesostructure of titania thin films was investigated in details. The mesoporous titania thin film supported Pt catalyst was prepared, and its methanol catalytic combustion performance was studied. The results showed that mesoporous titania thin film is an active support for catalyst. Mesoporous titania thin film supported platinum catalysts yields 70% methanol conversion at room temperature and 100% conversion at 100 °C. Copyright © 2013 John Wiley & Sons, Ltd.     

Evaluation of poly(4‐methyl‐1‐pentene) as a dielectric capacitor film for high‐temperature energy storage applications

Poly(4‐methyl‐1‐pentene) (P4MP) was characterized to evaluate its viability as a high‐temperature dielectric film for capacitors. Detailed investigation of thermal, mechanical, rheological, and dielectric properties was carried out to assess its high‐temperature performance and processability. P4MP was melt‐processable below 270 °C without degradation and application temperatures as high as 160–190 °C can be achieved. The dielectric constant and loss of melt‐processed P4MP films was comparable to biaxially oriented polypropylene (BOPP) capacitor films, although the dielectric strength was lower. Enhancements in dielectric strength up to 250–300% were achieved via solution‐processing P4MP films, which could be easily scaled up on a roll‐to‐roll platform to yield isotropic, free‐standing films as thin as 3–5 μm. The influence of crystal structure, crystallinity, and surface morphology of these films on the dielectric properties was examined. The dielectric strength was further increased by 450% through biaxial stretching of solution‐cast films, and a Weibull breakdown field of 514 V/μm was obtained. The dielectric constant was very stable as a function of frequency and temperature and the dielectric loss was restricted to <1–2%. Overall, these results suggest that BOP4MP is a promising candidate to obtain similar energy density as a BOPP capacitor film but at much higher operating temperatures. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2017 , 55, 1497–1515     

Structure analysis of SiCGe films grown on SiC

The island growth of SiCGe films on SiC at different temperatures has been investigated by SEM and transmission electron microscope (TEM). The island growth of SiCGe thin films depends on the processing parameter such as the growth temperature and follows the Stranski‐Krastanov (SK) mode. When the growth temperature is comparatively low, the thin film has two types of islands: one is a SiGe sphere‐like island of diamond‐cubic structure; another is a SiCGe cascading triangular island of zinc‐blende structure. As the growth temperature increases, the quantity of the sphere‐like islands reduces, while that of the cascading triangular islands increases. When the growth temperature is about 1060 °C, only cascading triangular islands are observed on the surface of the thin film, and the thickness of the 2D interfacial growth layer formed at the initial stage of the growth process is about 40 nm, which is twice of that grown at low temperature. Copyright © 2008 John Wiley & Sons, Ltd.     

Deposition of copper‐doped iron sulfide (CuxFe1−xS) thin films using aerosol‐assisted chemical vapor deposition technique

Copper‐doped iron sulfide (Cu_xFe_1?xS, x = 0.010–0.180) thin films were deposited using a single‐source precursor, Cu(LH)₂Cl₂ (LH = monoacetylferrocene thiosemicarbazone), by aerosol‐assisted chemical vapor deposition technique. The Cu‐doped FeS thin films were deposited at different substrate temperatures, i.e. 250, 300, 350, 400 and 450 °C. The deposited thin films were characterized by X‐ray diffraction (XRD) patterns, Raman spectra, scanning electron microscopy, energy dispersive X‐ray analysis (EDX) and atomic force microscopy. XRD studies of Cu‐doped FeS thin films at all the temperatures revealed formation of single‐phase FeS structure. With increasing substrate temperature from 250 to 450 °C, there was change in morphology from wafer‐like to cylindrical plate‐like. EDX analysis showed that the doping percentage of copper increased as the substrate temperature increased from 250 to 450 °C. Raman data supports the doping of copper in FeS films. Copyright © 2010 John Wiley & Sons, Ltd.     

Characterisation and properties of magnetron sputtered nanoscale bi‐layered Ni/Ti thin films and effect of annealing

Single‐bi‐layer of Ni–Ti thin film was deposited using DC and RF magnetron sputtering technique by layer‐wise deposition of Ni and Ti on Si(100) substrate in the order of Ni as the bottom layer and Ti as the top layer. The deposition of these amorphous as‐deposited thin films was followed by annealing at 300 °C, 400 °C, 500 °C, and 600 °C temperature with 1‐h annealing time for each to achieve crystalline thin films. This paper describes the fabrication processes and the novel characterization techniques of the as‐deposited as well as the annealed thin films. Microstructures were analysed using FESEM and HRTEM. Nano‐indentation and AFM were carried out to characterize the mechanical properties and surface profiles of the films. It was found that, for the annealing temperatures of 300 °C to 600 °C, the increase in annealing temperature resulted in gradual increase in atomic‐cluster coarsening with improved ad‐atom mobility. Phase analyses, performed by GIXRD, showed the development of silicide phases and intermetallic compounds. Cross‐sectional micrographs exhibited the inter‐diffusion between the two‐layer constituents, especially at higher temperatures, which resulted either in amorphization or in crystallization after annealing at temperatures above 400 °C. Copyright © 2015 John Wiley & Sons, Ltd.     

Effects of gold‐induced crystallization process on the structural and electrical properties of germanium thin films

Gold‐induced (Au‐) crystallization of amorphous germanium (α‐Ge) thin films was investigated by depositing Ge on aluminum‐doped zinc oxide and glass substrates through electron beam evaporation at room temperature. The influence of the postannealing temperatures on the structural properties of the Ge thin films was investigated by employing Raman spectra, X‐ray diffraction, and scanning electron microscopy. The Raman and X‐ray diffraction results indicated that the Au‐induced crystallization of the Ge films yielded crystallization at temperature as low as 300°C for 1 hour. The amount of crystallization fraction and the film quality were improved with increasing the postannealing temperatures. The scanning electron microscopy images show that Au clusters are found on the front surface of the Ge films after the films were annealed at 500°C for 1 hour. This suggests that Au atoms move toward the surface of Ge film during annealing. The effects of annealing temperatures on the electrical conductivity of Ge films were investigated through current‐voltage measurements. The room temperature conductivity was estimated as 0.54 and 0.73 Scm⁻¹ for annealed samples grown on aluminum‐doped zinc oxide and glass substrates, respectively. These findings could be very useful to realize inexpensive Ge‐based electronic and photovoltaic applications.     

Evolution of surface topography and optical band gap of ZnO film deposited on NiO/Si(100)

Evolution of surface features and optical band gap of ZnO thin films deposited on different NiO/Si(100) are reported. In order to create different initial microstructure, we first deposited NiO film on Si(100) at 3 different temperatures (400°C, 650°C, and 700°C) by pulsed laser deposition. These NiO/Si(100) films are used as substrate for the deposition of ZnO films. Combining the results obtained from grazing incidence X‐ray diffraction, atomic force microscope, and UV‐Visible characterization, our study indicated that the microstructure of the substrate takes the important role in dictating properties of the film. Our study also indicated that one needs to choose appropriate synthesis condition to achieve good quality ZnO films.     

Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Ordered Mesoporous Thin Films of Rutile TiO2 Nanocrystals Mixed with Amorphous Ta2O5

Ordered mesoporous thin films of composites of rutile TiO₂ nanocrystals with amorphous Ta₂O₅ are fabricated by evaporation‐induced self‐assembly followed by subsequent heat treatment beyond 780 °C. Incorporation of selected amounts of Ta₂O₅ (20 mol %) in the mesoporous TiO₂ film, together with the unique mesoporous structure itself, increased the onset of crystallization temperature which is high enough to ensure the crystallization of amorphous titania to rutile. The ordered mesoporous structure benefits from a block‐copolymer template, which stabilizes the mesostructure of the amorphous mixed oxides before crystallization. The surface and in‐depth composition analysis by X‐ray photoelectron spectroscopy suggests a homogeneous intermixing of the two oxides in the thin film. A detailed X‐ray absorption fine structure measurement on the composite film containing 20 mol % Ta₂O₅ and heated to 800 °C confirms the amorphous nature of the Ta₂O₅ phase. Photocatalytic activity evaluation suggests that the rutile nanocrystals in the synthesized ordered mesoporous thin film possess good ability to assist the photodegradation of rhodamine B in water under illumination by UV light.     

Investigating Pb diffusion across buried interfaces in Pb(Zr0.2Ti0.8)O3 thin films via time‐of‐flight secondary ion mass spectrometry depth profiling

The diffusion of Pb through Pb(Zr_0.2Ti_0.8)O₃(PZT)/Pt/Ti/SiO₂/Si thin film heterostructures is studied by using time‐of‐flight secondary ion mass spectrometry depth profiling. The as‐deposited films initially contained 10 mol% Pb excess and were thermally processed at temperatures ranging from 325 to 700°C to promote Pb diffusion. The time‐of‐flight secondary ion mass spectrometry depth profiles show that increasing processing temperature promoted Pb diffusion from the PZT top film into the buried heterostructure layers. After processing at low temperatures (eg, 325°C), Pb⁺ counts were low in the Pt region. After processing at elevated temperatures (eg, 700°C), significant Pb⁺ counts were seen throughout the Pt layer and into the Ti and SiO₂ layers. Intermediate processing temperatures (400, 475, and 500°C) resulted in Pb⁺ profiles consistent with this overall trend. Films processed at 400°C show a sharp peak in PtPb⁺ intensity at the PZT/Pt interface, consistent with prior reports of a Pt₃Pb phase at this interface after processing at similar temperatures.     

Effect of annealing temperature on titania thin films prepared by spin coating

Essentially fully dense titania thin films were spin coated on fused quartz substrates under identical conditions and subjected to annealing over the range 750°–900°C. The films were of a consistent ~400 nm thickness. The anatase → rutile phase transformation temperature was between 750°C and 800°C, with first-order kinetics; annealing at 900°C yielded single-phase rutile. Silicon contamination from the fused quartz substrate was considered to be critical since it suppressed both titania grain growth (maintaining constant grain size) and the phase transformation (occurring at an unusually high temperature); its presence also was considered to be responsible for the formation of lattice defects, which decreased the transmittances and the band gaps.     

Influence of substrate chemistry and the network homogeneity of ultra‐thin cross‐linked polymer films cured at their surface on the main relaxations temperatures probing by microthermal analysis

Thin 200‐nm epoxy–amine mixtures were cured on silicon wafers with different surface chemistry to quantify the effect of the chemistry on the glass transition temperature evolution in ultra‐thin thermosetting films. Two surface treatments were investigated: the first one only consisted in the activation of the silanols groups at the silicon surface, whereas the second one consisted in the grafting 3‐aminopropyltrimethoxysilane (APTMS) monolayer on the silicon wafers. The epoxy films were deposited on these chemistry modified wafers by spin coating a toluene solution of DGEBA–amine mixture at stoichiometric ratio. The same cure processing was used for both samples. Thin films were analysed not only using microthermal and thermomechanical analysis to determine the relaxation transitions temperatures of these films but also using FTIR in infrared reflection absorption spectroscopy mode to determine the curing rate of these networks. It was found that all these thin films showed two different glass transitions, the first one at 96 °C and was independent of the surface treatments, whereas the second one increasing from 142 °C for the oxidised wafers surface to 167 °C for the aminosilane grafted on the silicon wafer. The substrate chemistry extent on the film network structure, the interfacial bonds and interactions are discussed. This work also illustrates the interest in using microthermal analysis to obtain relevant temperature glass transition of thin film at sub‐micrometre scale, strongly dependant of local structure and chemistry composition. Copyright © 2009 John Wiley & Sons, Ltd.     

Preparation of Ordered Mesoporous Alumina‐Doped Titania Films with High Thermal Stability and Their Application to High‐Speed Passive‐Matrix Electrochromic Displays

Ordered mesoporous alumina‐doped titania thin films with anatase crystalline structure were prepared by using triblock copolymer Pluronic P123 as structure‐directing agent. Uniform Al doping was realized by using aluminum isopropoxide as a dopant source which can be hydrolyzed together with titanium tetraisopropoxide. Aluminum doping into the titania framework can prevent rapid crystallization to the anatase phase, thereby drastically increasing thermal stability. With increasing Al content, the crystallization temperatures tend to increase gradually. Even when the Al content doped into the framework was increased to 15 mol %, a well‐ordered mesoporous structure was obtained, and the mesostructural ordering was still maintained after calcination at 550 °C. During the calcination process, large uniaxial shrinkage occurred along the direction perpendicular to the substrate with retention of the horizontal mesoscale periodicity, whereby vertically oriented nanopillars were formed in the film. The resulting vertical porosity was successfully exploited to fabricate a high‐speed and high‐quality passive‐matrix electrochromic display by using a leuco dye. The vertical nanospace in the films can effectively prevent drifting of the leuco dye.     

Preparation and characterization of crack-free sol–gel based SiO2–TiO2 hybrid nanoparticle film

Owing to the diverse potential applications of hybrid silica–titania thin films, the synthesis and characterization of these films have been carried out with a special focus on application as a medium index layer for multilayered functional coatings. For synthesis, tetraethylorthosilicate and titanium tetraisopropoxide were chosen as precursors for the formation of silica-titania hybrid thin films/nano-composites through an in situ sol–gel process. These films were sequentially obtained on Cu substrate utilizing spin coating. The hybrids were characterized by field emission scanning electron microscope, energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction, atomic force microscopy and Fourier transform infrared spectroscopy (FTIR). Field emission scanning electron microscope morphology displayed a smooth, densified and crack- free layer of silica-titania hybrid nanoparticles in the range of 20–71 nm after calcinations at low temperature of 300ºC for 1 h. X-ray diffraction pattern confirms the phases of titania with higher crystallinity and phase transformation at low temperature. The prepared films were uniform with low 8.852 nm RMS value. The stoichiometry of films was confirmed by EDX results. The FTIR spectroscopy indicated the establishment of heterogeneous chemical bonding between the Ti and Si surfaces through oxygen.     

Preparation of CuAlO<Subscript>2</Subscript> thin films with high transparency and low resistivity using sol–gel method

CuAlO₂ thin films were deposited on quartz substrates by sol–gel process using copper acetate monohydrate and aluminum nitrate nanohydrate as starting materials and isopropyl alcohol as solvent. The influence of annealing temperature on the film structure and the phase evolution of CuAlO₂ films were investigated, so as to obtain CuAlO₂ films with superior performance. The phase compositions of the films were dependent on the annealing temperature. The films annealed at temperatures below 400 °C were amorphous while those annealed above 400 °C were polycrystalline. The phases of CuO and CuAl₂O₄ appeared gradually with the increase of annealing temperature. When the heat treatment temperature was elevated to 900 °C, the uniform and dense films with single phase of CuAlO₂ were obtained, with a resistivity of 15 Ωcm. The transmittance of the 310 nm-thick CuAlO₂ film is 79% at 780 nm and the direct optical band gap is 3.43 eV.     

Mesoporous Titania Thin Film with Highly Ordered and Fully Accessible Vertical Pores and Crystalline Walls

We report the preparation of mesoporous titania thin films with the R m pore structure derived from the Im m self‐assembled ordering of the titania species and an EO₁₀₆PO₇₀EO₁₀₆ triblock copolymer. The films were spin‐cast and then aged at 18 °C at a relative humidity of 70 %, which led to the orientation of the Im m structure with the [111] direction perpendicular to the substrates. The [111] body‐diagonal channels became vertical channels upon calcination at 400 °C, thus leading to thin films with vertical channels. The pores are ordered over a large area of up to 1 μm². The titania films can be formed on various types of substrates. By using a titania film formed on a Pt‐coated Si wafer as a template, we produced by an electrochemical‐deposition technique arrays of gold nanowires, whose morphology suggests that most of the pores of the titania thin films are accessible. The pore structure of vertical channels is stable up to 600 °C, at which temperature the wall materials crystallize into anatase.     

Tuning hydrophobicity of a fluorinated terpolymer in differently assembled thin films

In the current report, casting from good solvent (acetone) and casting from mixed solvent and nonsolvent were employed for preparing thin films of terpolymer of T etrafluoroethylene (TFE), H exafluoropropylene (HFP), and V inylidene fluoride (VDF) (THV), on silicon wafers. These films revealed various morphologies and wetting behaviors depending on the solution concentration, temperature, and thin film preparation method. The THV thin films prepared by casting from good solvent showed smooth morphology with holes. The thin film prepared from a 3 wt % THV/acetone solution by casting from good solvent at 15 °C demonstrated spheres in addition to the smooth morphology, while the thin film prepared from a 5 wt % THV/acetone solution at 15 °C by casting from good solvent had a mesh‐like structure with some linked spheres. Casting the thin films from mixed solvent and nonsolvent resulted in various morphologies such as different sphere sizes embedded in a dense film layer, and hexagonal close packed structures. The thin films prepared by casting from good solvent showed a slightly hydrophobic character, with a measured water contact angle of approximately 99°, while the nonsolvent cast films had a water contact angle as high as 145°. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2017 , 55, 643–657