Radiative recombination enhancement of bare ions in storage rings with electron cooling

Experiments on ion-electron recombination in electron coolers show an enhancement of the recombination rate with respect to the standard theory. The theoretical explanation of this effect is an active field of research. Here a parameter-free model is presented in terms of the Vlasov equation. Its inherent scaling rests on two dimensionless variables and agrees with measurements. Additionally, numerical calculations yield the correct magnitude for the enhancement and trace its cause to the process of beam merging.     

Radiative recombination of an electron with multiply charged uranium ions

Optics and Spectroscopy - Precise relativistic calculations of the total and differential cross sections of radiative recombination of an electron with hydrogen-, helium-, and lithium-like uranium...     

Radiative atomic recombination of antiprotons with light nuclei

The explicit, analytical expression of the photorecombination cross section of negative particles with nuclei has been deduced in terms of non-confluent, hypergeometrical functions of complex variable. The initial population of antiprotons, after atomic recombination with hydrogen, deuterium and tritium, has been calculated.     

Nonextensive interpretation of radiative recombination in electron cooling

An interest for the low-energy range of the nonextensive distribution function arises from the study of radiative recombination in electron cooling devices in particle accelerators, whose experimentally measured reaction rates are much above the theoretical prediction. The use of generalized distributions, that differ from the Maxwellian in the low energy part (due to subdiffusion between electron and ion bunches), may account for the observed rate enhancement. In this work, we consider the isotropic distribution function and we propose a possible experiment for verifying the existence of a cut-off in the generalized momentum distribution, by measuring the spectrum of the X-rays emitted from radiative recombination reactions.     

Radiative cooling of tokamak plasmas due to multiply-charged Fe impurity ions

Calculations are presented for the rates of radiative energy loss from tokamak plasmas arising from radiation processes involving collisions between electrons and multiply-charged Fe impurity ions. The distribution of ionization states is determined from the steady-state corona model. The inclusion of dielectronic recombination raises the temperature at which each ion has its maximum equilibrium abundance. For certain nonhydrogenic ions, the dielectronic recombination rates obtained from previous calculations are found to be overestimated due to the neglect of autoionization into an excited state of the recombining ion. Electron impact excitation of resonance line radiation in the far ultraviolet and X-ray regions is the dominant radiative cooling mechanism at temperatures where ions with bound electrons are abundant. However, the radiation emitted during dielectronic recombination can be more important than direct recombination radiation and bremsstrahlung.     

Laser-induced electron--ion recombination used to study enhanced spontaneous recombination during electron cooling

Spontaneous recombination of highly charged ions with free electrons in merged velocity matched electron and ion beams has been observed in earlier experiments to occur at rates significantly higher than predicted by theoretical estimates. To study this enhanced spontaneous recombination, laser induced recombination spectra were measured both in velocity matched beams and in beams with well defined relative velocities, corresponding to relative electron-ion detuning energies ranging from 1 meV up to 6.5 meV where the spontaneous recombination enhancement was found to be strongly reduced. Based on a comparison with simplified calculations, the development of the recombination spectra for decreasing detuning energies indicates additional contributions at matched velocities which could be related to the energy distribution of electrons causing the spontaneous recombination rate enhancement. This revised version was published online in August 2006 with corrections to the Cover Date.     

Radiative recombination in stressed superlattices

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 3, pp. 160–163, May–June, 1995.     

Coherent interaction of ion and electron beams in systems with electron cooling

A hydrodynamic approximation is used to study the behavior of dipole modes of the transverse oscillations of an ion beam in a storage ring with an electron cooling section. It is shown that in addition to the finite interaction time of the beams, instability may be caused by a specific interaction effect between the ion and electron beams in the magnetic field which leads to redistribution of energy between the various modes of the ion beam oscillations. In this case, the condition that the determinant of the transfer matrix for the cooling section does not exceed unity no longer guarantees the stability of the transverse coherent oscillations of the ion beam and all the eigenvalues of the complete matrix of the ion motion including the storage ring must be analyzed. Calculations of the stability of ion beam dipole oscillations are presented for the parameters of CELSIUS.     

Radiative recombination in ZnTe-CdSe and ZnSe-CdTe heterojunctions

Electroluminescence in II–VI heterojunctions has been investigated. Three types of ZnTe-CdSe heterojunctions were studied depending on the preparation method: Red diodes obtained by doping with O₂, yellow Cu-doped diodes and green undoped heterojunctions. Radiation was observed only in the forward biased junctions. At 80 K the external quantum efficiency is about 1.3% for red ZnTe-CdSe heterojunctions and decreases by one order of magnitude at room temperature. The radiation intensity for the other heterojunctions is the same at 80 K but at 150 K the luminescence disappears. The band diagram and the electroluminescence spectra show that the two-directional injection takes place in the ZnTe-CdSe heterojunctions. The blue electroluminescence for ZnSe-CdTe heterojunctions is due to the injection of hot holes in ZnSe from the high-resistivity layer at the interface and the recombination of these holes with the free electrons through an accepto level at 0.124 eV from the valence band. At 80 K slow periodic current oscillations accompanied by in-phase oscillations of the luminescence have been observed in ZnSe-CdTe heterojunctions.     

Radiative recombination in the helium sequence

Recombination coefficients for the reaction X^+m+1(1²S+e → X^+m(1¹S) + hv for the helium] sequence are calculated using recently obtained optical differential oscillator strengths for electron temperatures in the range 10 to 5 x 10⁴ K. The coefficients for the entire sequence are represented by a simple formula, which requires only the ionization potential of the members of the sequence.     

Radiative recombination in hydrogenated amorphous silicon

Hydrogenated amorphous silicon exhibits efficient optical transitions across a gap larger than that of crystalline Si. Hydrogen passivates the dangling bonds and endows the material with a reduced number of non-radiative recombination centers. A gap widening has been observed in other hydrogenated semiconductors.Research reported herein was supported by the Department of Energy, Division of Solar Technology, under Contract No. EY-76-C-03-1286 and by RCA Laboratories, Princeton, NJ 08540.     

Radiative muon capture in medium-heavy nuclei

Radiative muon capture in nuclei is thoroughly investigated in view of its sensitivity to the pseudoscalar coupling constant g_P. In the photon energy domain of interest (k ? 60 MeV) the effective one-body hamiltonian in use is shown essentially to hold true, with minor corrections due to the muon propagator in the nuclear field and to the two-step process. The closure approximation is avoided by appropriately integrating the response function calculated in the Fermi gas model, in the energy-momentum transfer plane.Theoretical predictions in medium-heavy nuclei of the high-energy photon spectrum, of photon polarization, and of muon-spin photon angular correlation are given for various values of the pseudoscalar coupling constant.     

Radiative recombination of donor-acceptor pairs in ZnTe

Lifetime of the first excited state of donor-acceptor pairs has been measured in ZnTe as a function of the donor-acceptor distance. The measured lifetime for the radiative recombinations of donor-acceptor pairs agrees well with the calculated one in which the central cell correction for the 1s state of the acceptors is taken into account. It has been found that the lifetime depends on the impurity concentration. The concentration dependence is discussed in connection with the non-exponential decay of the luminescence observed for more distant donor-acceptor pairs.     

Radiative Ml capture in light nuclei

The importance of semi-direct processes in E1 and E2 capture reactions has been well documented. Little is known, however, about M1 capture although a vast body of data indicates a non-statistical nature. We discuss here the importance of the semi-direct M1 process and concentrate in particular on recent experimental results claiming that the M 1 strength in²⁹Si isnearly one order of magnitude smaller than in ²⁸Si, the target nucleus. We use shell model arguments to demonstrate that this reduction is indeed consistent with the semi-direct reaction process and that other mechanisms like2p-2h fragmentation and phonon coupling are not likely to be instrumental in elucidating further the non-statistical nature of the²⁸Si+n reaction.     

Radiative and nonradiative recombination times in semiconducting films

The radiation emitted spontaneously by a semiconductor which has been excited for a very short time decays exponentially with a time constant that depends on the recombination rate of electrons and holes. This recombination rate is the combination of radiative and nonradiative transition rates between conduction and valence bands of the semiconductor. The radiative recombination rate depends on the density of states of the electromagnetic field, which can be made to be dependent on the geometry. In this paper, we report on the dependence of the fluorescence lifetime upon the thickness of active thin films. For systems in which the radiative recombination rate is dominant over the nonradiative ones, the total recombination time can be changed by suitable modifications of the thickness of the film. In this situation, the nonradiative rate can be evaluated. We present experimental results for the case of cadmium sulphide (CdS) thin films.