Effect of different oxidizing gases on the in-situ growth of YBa2Cu3O7−δ films by pulsed laser deposition

The effectiveness of oxygen (O₂), nitrous oxide (N₂O), and nitrogen dioxide (NO₂) as oxidizing agents during in-situ growth of YBa₂Cu₃O_7−δ (YBCO) films on (100) SrTiO₃ substrates by pulsed laser deposition has been studied as a function of deposition temperature (700–800°C), and laser wavelength (193,248 and 355 nm), for a wide range of oxidizer gas pressure (0.1–200 mTorr). In general, the superconducting transition temperature of the films has been found to increase with increasing oxidant pressure, with zero-resistance temperature ≈90 K only obtained in films prepared in a relatively high pressure (150–200 mTorr) of oxidizer gas. At lower pressures, the transition temperature while being depressed is quite sensitive to the nature of the oxidant, the laser wavelength and the deposition temperature. Nevertheless, independent of the oxygen source or other growth parameters, an almost linear decrease in transition temperature with a corresponding increase in the c-axis lattice parameter has been observed for all the film. YBCO films have also been deposited in a low pressure background (≤ 1 mTorr) using a combination of atomic oxygen and pulsed molecular oxygen. The results are discussed in terms of the oxygen requirement for kinetic and thermodynamic stability of YBCO during growth of the film by pulsed laser deposition.     

Nb/Au/(1 1 0)YBa2Cu3O7−δ Josephson junctions: evidence against atomic scaled “corner junctions”

We report on I–V characteristics for in situ formed Nb/Au/(1 1 0)YBa₂Cu₃O_7−δ (YBCO) Josephson junction, where the homoepitaxial (1 1 0)YBCO film shows ultra-smooth surface morphology. The field dependence of critical supercurrent I_c shows anisotropic large junction behavior with normal Fraunhofer patterns expected from BCS model of d_x²−y² wave superconductors. This strongly suggests that the Nb/Au/(1 1 0)YBCO junctions cannot be regarded as atomic scaled corner junctions, in contrast with (0 0 1)/(1 1 0)YBCO grain boundary junctions to show “π-junction” with a pronounced dip near zero fields in field modulation of I_c.     

Vortex pinning in polycrystalline Eu1.5Ce0.5Sr2Cu2NbO10 from rotational magnetic measurements

Rotational magnetization-vector measurements were carried out on a superconducting polycrystalline disk of EuCSCNO. The results at 4.2 K and low fields resemble recent results for YBa₂Cu₃O_7−δ (YBCO) and Ba_0.57K_0.43BiO₃ (BKBO) in revealing a broad distribution in the strength of the vortex pinning torques. This resemblance extends to higher fields, where it was found that the average pinning torque per vortex (τ_p), which is directly related to the critical current density, decreases steadily with increasing field in a manner consistent with vortex bundling. Quantitatively, however, the values of τ_p for EuCSCNO are smaller by an order of magnitude than those for YBCO but are only moderately smaller than those for BKBO. This comparison supports the notion that the vortex pinning may derive in part from deviations from oxygen stoichiometry, which are normally present in YBCO but are essentially absent in EuCSCNO and BKBO. Moreover, as in YBCO and BKBO, the τ_p in EuCSCNO at fixed field is found to diminish rapidly as the temperature rises towards T_c.     

A comparison of the zero bias differential resistance of Ag:Nb and Ag:Nd1.85Ce0.15CuO4−δ point contacts as a function of temperature below Tc

Point contact spectra for contacts between Ag and two different superconductors, Nb and Nd_1.85Ce_0.15CuO_4−δ, were measured as a function of temperature using a crossed wire-wedge technique (R.C. Reinertson et al., Physica B 165&166 (1990) 1615). The temperature dependence of the zero bias resistance quantitatively agrees with predictions of the theory by Blonder, Tinkham and Klapwijk (Phys. Rev. B 25 (1982) 4515) for normal:superconductor point contacts for all interface scattering barrier strengths observed in this study (Z = 0.3 to Z = 1.0). The zero bias temperature dependence of Ag:Nd_1.85Ce_0.15CuO_4−δ contacts indicates a systematically higher range of barrier strengths and contact resistances than typical Ag:Nb contacts.     

Thermally activated flux dissipation in c-axis-oriented YBa2Cu3O7−δ ultrathin films

The resistive transitions of ultrathin YBa₂Cu₃O_7−δ (YBCO) films with thicknesses 75 and 200 Å were studied under magnetic fields. For the 75 Å film under a 5 T parallel magnetic field (Hbab-plane), no broadening of the resistive transition occurred. In the perpendicular magnetic field (H ab-plane), the broadening of the resistive transition of the 75 Å film is larger than that of the 200 Å thick film. The flux activation energy U was found to be linearly dependent on the temperature and logarithmically dependent on the magnetic field for both 75 and 200 Å films, which means the two samples have a two-dimensional vortex lattice. Furthermore, the activation energy U also increased with the film thickness, indicating that the magnetic correlation length in the c-axis direction l_c is larger than the 200 Å for bulk YBCO.     

RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2

Ohmic contacts to p-type CuCrO₂ using Ni/Au/CrB₂/Ti/Au contact metallurgy are reported. The samples were annealed in the 200–700 °C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of 2 × 10⁻⁵ Ω cm² was obtained after annealing at 400 °C. Further increase in the annealing temperature (>400 °C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 °C, followed by Cr at higher temperature. The CrB₂ diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone.     

High critical current density YBa2Cu3O7−δ tapes prepared by the surface-oxidation epitaxy method

YBa₂Cu₃O_7−δ (YBCO) films with high critical current density (J_c) were successfully fabricated on nickel tapes buffered with epitaxial NiO. NiO was prepared on the textured nickel tape by the surface-oxidation epitaxy (SOE) method. We have reported so far a critical temperature (T_c) of 87 K and J_c=4–6×10⁴ A/cm² (77 K, 0 T) for the YBCO films on NiO/Ni tapes. To enhance the superconducting properties of the YBCO films on the SOE-grown NiO, depositions of thin oxide cap layers such as YSZ, CeO₂, and MgO on NiO were investigated. These oxide cap layers were epitaxially grown on NiO and provided the template for the epitaxial growth of YBCO films. Substantially improved data of T_c=88 K and J_c=3×10⁵ A/cm² (77 K, 0 T) and 1×10⁴ A/cm² (77 K, Hc, 4 T) were obtained for YBCO film on NiO, by using a MgO cap layer with a thickness of 50 nm. The method described in this paper is a simple way to produce long YBCO tape conductors with high-J_c values.     

High TcYBa2Cu3O7−δ superconducting transition-edge microbolometers

High T_c superconducting thin film YBa₂Cu₃O_7−δ (YBCO) bolometers have been fabricated on various substrates such as MgO, LaAlO₃, YSZ and Si using laser ablation technique. Performance of these IR bolometers operating with a Joule-Thomson refrigerator has been investigated. Measurements of the responsivity and low frequency noise near T_c in the current biased YBCO bolometers show that reliable devices can be fabricated. Measured noise equivalent power (NEP), for YBCO/YSZ bolometer, reaches 6 × 10⁻¹⁰W/Hz^1/2 at 165 Hz and has a responsivity of 60 V/W with a blackbody source. This performance is comparable to that of the optimized pyroelectric detectors. The characteristics of YBCO films deposited on Si substrates reveal that superconducting thin film multi-elements or focal plane array with silicon integrated readout circuit are feasible. Such bolometers exhibit NEP of 7 × 10⁻⁹W/Hz^1/2, and significant improvement appears possible. Electrical measurements show no noticeable film degradation after the bolometer is exposed to atmosphere for three months.     

SiO2 passivation film effects on microwave characteristics of YBa2Cu3O7−x-based resonators

SiO₂ film coated as a passivation layer for YBa₂Cu₃O_7−x (YBCO)-based microwave devices is investigated by measuring the microwave characteristics of microstrip line resonators. The SiO₂ film is deposited with its 0.3 to 0.4 μm thickness by a sputtering method using Ar + 30%O₂ plasma. These deposition conditions do not degrade the microwave characteristics and the critical temperature (T_c). Next, the SiO₂ film coated resonators are compared with the uncoated ones for two kinds of degradation conditions: a 200°C annealing in air, and an exposure to air at 85°C and 85% RH (relative humidity). We find that the SiO₂ passivation film prevents the YBCO thin film from the surface degradation and reacting with water.     

Interaction of oxygen and CO with thin Ag films at AgTi2 substrates

Clean Ag overlayers with a thickness of about three atomic layers are prepared at polycrystalline AgTi₂ surfaces. Adsorption of oxygen and CO at these overlayers is studied with AES, UPS, and TDS methods. UP spectra reveal that oxygen adsorbs dissociatively on the surface of the Ag overlayers at 120 K, similar as at the surfaces of bulk Ag crystals. At higher temperatures, O atoms diffuse into the overlayer and get trapped at Ti at the interface underneath the Ag layer. Unlike at bulk Ag, oxygen adsorption proceeds with high sticking probability, which is attributed to a reduced activation barrier. CO adsorbs at the Ag overlayers in a weakly chemisorbed state with an adsorption energy of ca. 9 kcal/mol, whereas at bulk Ag true physisorption has been observed. Accordingly, UP spectra of CO adsorbed at 120 K exhibit well separated 4σ, 1π and 5σ emission peaks at energetic positions which are essentially different from the CO/Ag physisorption system. This observation is interpreted as a demonstration of the ligand effect, i.e., the activation of weak CO bonding at Ag by strong bonding Ti.     

掺杂Y2O3和BaCeO3提高MOD-YBCO超导性能的研究

本文通过在前驱液中添加过量钇盐和铈的有机盐,采用三氟乙酸盐-金属有机沉积法(TFA-MOD) 在铝酸镧单晶基体上制备了含有纳米氧化钇和纳米铈酸钡的YBCO薄膜. 与纯YBCO薄膜相比,掺杂Y₂O₃/BaCeO₃的YBCO膜的临界转变温度几乎保持不变,为91 K左右. 而掺杂Y₂O₃/BaCeO₃的YBCO膜的临界电流密度达到5.0 MA/cm² (77 K, 0T), 是纯YBCO膜临界电流密度的1.5倍.薄膜中的Y₂O₃和BaCeO₃可能在YBCO内部起到了 有效的钉扎磁通作用. 关键词： 钇钡铜氧薄膜 2O₃和纳米BaCeO₃')" href="#">纳米Y₂O₃和纳米BaCeO₃ 磁通钉扎 三氟乙酸盐-金属有机沉积     

Suppression of antiferromagnetic spin fluctuation in Zn-substituted YBa2Cu3O7

We have prepared Zn-substituted YBa₂Cu_3−xZn_xO₇ (YBCO, x=0.0–0.09) and performed ^63,65Cu nuclear quadrupole resonance (NQR) measurements for the plane site at 300 and 100 K as a function of Zn concentration. The substitutional effects are observed in resonant frequencies and linewidths of spectra, and relaxation times as well as in the superconducting transition temperature. The spin–lattice relaxation rate 1/T₁ is reduced for the higher Zn concentration and the reduction is more significant at 100 K. The ratio of ^63,65Cu spin–lattice relaxation rates suggests that a magnetic contribution due to the antiferromagnetic spin fluctuation becomes weak as the Zn concentration increases. These effects confirm that the antiferromagnetic spin fluctuation of Cu 3d spins is suppressed by the Zn substitution due to the absence of local moment at the zinc site.     

Magnetic properties of TmFeO3 and TmGa0.13Fe0.87O3 orthoferrites

The magnetization σ_c has been observed to depend strongly on temperature and biasing field in the Γ₄-phase. Two families of σ_c (T) occur corresponding to the poly-domain (H < 200 Oe), and mono-domain (H > 200 Oe) states of the samples. This was proved by observation of domain structures in these samples. In addition to the maximum due to the second-order phase transition Γ₂-Γ₄, we have revealed a maximum in the susceptibility curves _Xc(T) at the high-temperature point of phase transition. The second maximum strongly depends on the biasing field value. Domain structure behaviour in that temperature range, and in various external fields, allowed us to suggest that there exists a relation between this maximum and the shifting processes of domain boundaries, which create a significant susceptibility along the c-axis.     

The crystallographic symmetries of single BaPb1−xBixO3 crystals grown from BaCO3-PbO2-Bi2O3 solutions

Single crystals of Perovskite-type oxide BaPb_1−xBi_xO₃ are grown from BaCO₃-PbO₂-Bi₂O₃ solutions which are weighed in two kinds of mixing ratios: X/2 mol % BaCO₃ − (100−X) mol % PbO₂ − X/2 mol % Bi₂O₃ and (10+X/2) mol % BaCO₃ − (90−X) mol % PbO₂ − X/2 mol % Bi₂O₃ These room temperature crystal structures are examined by using an X-ray powder diffraction method. The crystals grown from X/2−(100−X)−X/2 mol % solutions are orthorhombic at room temperature, while the structures are tetragonal with crystals grown from relatively Ba rich and Pb poor ( (10+X/2)−(90−X)−X/2 mol % ) solutions. This result indicates that the difference in the mixing ratio of the initial materials brings about a drastic structural change. The orthorhombic and the tetragonal crystals of x0.25 exhibit superconducting transition at 10K and 12K, respectively. The transition temperature in the latter is 2K higher than the former. In the light of this result, some difference between orthorhombic and tetragonal crystals is considered to influence superconductivity in this system.     

The weak center nature and their pinning anisotropy of radiation damage defects in Y1Ba2Cu3O7−δ single crystals

A field induced weak pinning center, in MeV proton irradiated Y₁Ba₂Cu₃O_7−δ (YBCO) single crystal and in ⁶Li-doped sintered YBCO exposed to thermal neutron irradiation, has been identified. The pinning contribution of those radiation caused weak centers (RWCs) showed strong field dependence, which resembles that of the common weak centers of oxygen deficient regions (OWCs) in most of the bulk YBCO materials. The radiation dose dependence of the pinning enhancement, in proton irradiated single crystal, showed strong angular dependence, when the field orientation relative to the crystal was changed. This is believed to be due to the different flux line size (orξ) in different directions, and the so caused volume or line pinning effects. No angular dependence has been observed in neutron irradiated YBCO, which is polycrystalline in nature.     

Structural, magnetic and transport properties of NiFeχAg(1−χ) heterogeneous alloys

We carried out a comprehensive study of structural, magnetic and electrotransport properties of as-deposited and annealed (Ni₈₀Fe₂₀)_χAg(_1−χ) heterogenous alloys prepared by sputtering. The NiFe atomic concentration was varied between 15% and 40%. These alloys consist of small magnetic particles (Ni₈₀Fe₂₀) embedded in a nonmagnetic matrix (Ag). The structures of these alloys were investigated by X-ray diffraction, scanning electron microscopy and high-resolution cross-section transmission electron microscopy. The magnetic measurements were made using SQUID magnetometry and ferromagnetic resonance. Magnetoresistance was measured with a conventional four-point probe between 1.5 K and room temperature in field range 0–6T. Three contributions to the magnetoresistance of these granular alloys have been clearly identified: the spin-valve (or giant) magnetoresistance as in multilayers, scattering on magnetic fluctuations (as in any ferromagnetic metal around its magnetic ordering temperature), and anisotropic magnetoresistance. These three contributions have their own dependences on the size of the magnetic particles, on the degree of intermixing between Ni₈₀Fe₂₀ and Ag, and on temperature. We discuss the different shapes and amplitudes of magnetoresistance versus Ni₈₀Fe₂₀ concentration or temperature and their evolution upon annealing in terms of the relative roles of these three contributions. The magnetoresistance in multilayers (current in-plane or perpendicular to the plane) and granular alloys are also compared.     

Observation of defects and growth orientations of YBa2Cu3Ox thin films with YSZ buffer layers on Si

We have investigated defects and in-plate orientations of YBa₂Cu₃O_x thin films prepared by pulsed laser deposition (PLD) with YSZ as a buffer layer. The films showed c-axis oriented growth with the transition temperature T_co up to 87 K. Several types of defects including thermally induced cracks, grain boundaries and outgrowths were observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The grain boundary provided a favorable path for crack propagation. The outgrowths nucleated on the YSZ surface grew with stoichiometric composition. According to X-ray diffraction (XRD) and HRTEM studies the YSZ buffer layer grew with the orientation relationship, YSZ110//Si110 and YSZ(001)//Si(001) up to the YBCO/YSZ interface. The superconducting YBCO films on top grew mainly with YBCO100//Si110 and YBCO(001)//Si(001), with some minor portions of YBCO110//Si110 and YBCO(001)//Si(001).     

Electronic conduction properties of Au/C60/p-Si and C60/Au/p-Si sandwich structures: I–V and transducer characteristics

Gold-fullerite [C₆₀]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C₆₀/p-Si p–n heterojunction. The turn-on voltage of this p–n heterojunction lies in the range 0.25–0.27 V. The I–V characteristics of the Au/C₆₀/p-Si structure are mostly defined by the bulk specific resistance of the fullerite crystal film itself (6×10⁷ Ω cm). I–V curves in the C₆₀/Au/p-Si structure are shown to be ohmic. Au/C₆₀/p-Si sandwiches irradiated with swift (300 MeV) heavy ions, (⁸⁴Kr¹⁴⁺) to a total fluence 10¹⁰ ion/cm² yield structures which are sensitive to ambient air pressure, specifically in the case of a transverse contact configuration, and if one of the contacts is located on the irradiated part of the fullerite film. The sandwich-structure sensitivity to pressure is 5×10⁻⁶ Pa⁻¹. This exceeds the sensitivity of conventional silicon pressure transducers by almost three orders of magnitude.     

Tuning the multiferroic properties of Pb(Fe1/2Nb1/2)O3 by cationic substitution

A series of substituted lead iron niobate compounds with the general formula Pb²⁺_(1−x)A^Z_x(Fe_{{(1−(2−Z)x)/2}}Nb_{{(1+(2−Z)x)/2}})O₃ (0<x<0.6 and A=La³⁺, K⁺ or Sr²⁺) were prepared by a modified solid-state synthesis. The relative concentrations of Fe³⁺ and Nb⁵⁺ were adjusted to compensate the charge imbalance due to the aliovalent substitution. The dielectric constant and magnetic susceptibilities were studied as a function of temperature. The temperature of the dielectric maximum, T_M, of the substituted compounds decreased linearly with increasing concentration of the substituent ions. The magnetic measurements showed an antiferromagnetic transition at temperatures T_N1 due to the superexchange interactions mediated by Fe–O–Fe and an additional antiferromagnetic-type transition at T_N2. T_N1 linearly increased with the increasing concentration of Fe³⁺ ion at the B-site of ABO₃-type substituted compounds. T_M is shown to be directly dependent on the concentration of the ferroactive Nb⁵⁺ ions at the B-site and Pb²⁺ ions at the A-site.     

Direct measurement of the magnetocaloric effect in La0.67Ca0.33MnO3

Polycrystalline perovskite La_0.67Ca_0.33MnO₃ was synthesized by a sol–gel method. Its adiabatic temperature change ΔT_ad induced by a magnetic field change was measured directly. At 268 K, near its Curie temperature T_C, ΔT_ad of La_0.67Ca_0.33MnO₃ induced by a magnetic field change of 2.02 T reaches 2.4 K. The latent heat Q and magnetic entropy change −ΔS_M induced by a magnetic field change were calculated from the temperature dependence of ΔT_ad and zero-field heat capacity C_p. The maximum values of Q and −ΔS_M in La_0.67Ca_0.33MnO₃ induced by a magnetic field change of 2.02 T are 1.85 J g⁻¹ and 6.9 J kg⁻¹ K⁻¹, respectively. The former is larger than the phase transition latent heat of heating or cooling, which is about 1.70 J g⁻¹.