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1.
The polarization of traditional photonic crystal(PC) vertical cavity surface emitting laser(VCSEL) is uncontrollable,resulting in the bit error increasing easily.Elliptical hole photonic crystal can control the transverse mode and polarization of VCSEL efficiently.We analyze the far field divergence angle,and birefringence of elliptical hole PC VCSEL.When the ratio of minor axis to major axis b/a = 0.7,the PC VCSEL can obtain single mode and polarization.According to the simulation results,we fabricate the device successfully.The output power is 1.7 mW,the far field divergence angle is less than 10°,and the side mode suppression ratio is over 30 dB.The output power in the Y direction is 20 times that in the X direction.  相似文献   

2.
文章报道了国内首次研制成功的光子晶体垂直腔面发射850nm波长激光器, 实现了连续电注入激射.发现器件能否激射直接依赖于光子晶体结构参数,而激光器的阈值、输出功率、输出模式等与光子晶体的晶格常数、占空比、腔的大小等因素有关.  相似文献   

3.
大功率垂直腔面发射激光器单管器件出光口径大、横向模式多。随着注入电流和工作温度的改变出射光偏振态在两个正交偏振基态上转换。为分析输出光偏振特性,采用500μm出光口径980nm底发射器件,通过控制器件热沉温度,利用偏振分光镜分离正交偏振基态为透射波和反射波,半导体综合参数测试仪测量其功率、中心波长等参量。分析得出:两个偏振态的光功率温度特性与未加偏振分光镜时的总输出光的温度特性基本一致,中心波长差随温度升高缓慢增加。在温度低于328K时,随着注入电流的增大,反射波首先达到阈值,形成激射。但透射光波形成激射后其斜效率大于反射波。因此在达到某个电流后两个偏振态的功率变化曲线出现交替。当温度升高到328K以上时两个偏振态的功率曲线却没有明显的交替。根据对大尺寸VCSEL器件偏振特性的研究,提出通过外腔选频的方法来控制偏振的方案,分析计算后得出外腔腔长大约为0.45mm。  相似文献   

4.
制备了不同氧化孔径的940nm垂直腔面发射激光器(VCSEL),选取氧化孔径为3,6,9μm的VCSEL进行了测试表征分析。氧化孔径为3,6,9μm的VCSEL的最高输出功率分别为2.92,6.79,10.49mW,调制带宽分别为27.65,23.34,20.56GHz。此外,氧化孔径为3μm的VCSEL在整个工作电流下都可实现单模工作,氧化孔径为6μm和9μm的VCSEL在较大电流下呈现少模和多模特性。最后,选取3μm氧化孔径的VCSEL进行数据传输测试,在非归零(NRZ)码下实现了传输速率53Gbit/s。  相似文献   

5.
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In this work, the characteristics of the photonic crystal tunneling injection quantum dot vertical cavity surface emitting lasers(Ph C-TIQD-VCSEL) are studied through analyzing a modified modulation transfer function. The function is based on the rate equations describing the carrier dynamics at different energy levels of dot and injector well. Although the frequency modulation response component associated with carrier dynamics in wetting layer(WL) and at excited state(ES) levels of dots limits the total bandwidth in conventional QD-VCSEL, our study shows that it can be compensated for by electron tunneling from the injector well into the dot in TIQD structure. Carrier back tunneling time is one of the most important parameters, and by increment of that, the bias current dependence of the total bandwidth will be insignificant. It is proved that at high bias current, the limitation of the WL-ES level plays an important role in reducing the total bandwidth and results in rollovers on 3-d B bandwidth-I curves. In such a way, for smaller air hole diameter of photonic crystal, the effect of this reduction is stronger.  相似文献   

6.
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向磊  张星  张建伟  宁永强  王立军 《中国物理 B》2017,26(7):74209-074209
In this paper, stable single-mode operation at high temperatures is produced by the surface-relief-integrated vertical cavity surface emitting laser(VCSEL). The gain-cavity mode detuning technique is employed to realize high operating temperatures for the VCSEL. The surface relief is etched in the centre of the top side as a mode discriminator for the fundamental mode output, and the threshold current minimum is 1.94 mA at high temperatures by the gain-cavity mode detuning technique. Maximum single-fundamental-mode output power of 0.45 mW at 80℃ is obtained, and the side mode suppression ratios(SMSRs) are more than 30 dB with increasing temperature and current, respectively.  相似文献   

7.
光脉冲注入下VCSEL的偏振开关特性   总被引:2,自引:0,他引:2  
基于描述主、副垂直腔表面发射激光器(M-VCSEL,S-VCSEL)动态特性的速率方程,研究了M-VCSEL在脉冲电流调制下,输出光脉冲的偏振特性,以及S-VCSEL在M-VCSEL输出光脉冲的注入下,其偏振开关特性.研究结果表明:M-VCSEL在周期性脉冲电流的作用下,将产生周期性光脉冲输出;S-VCSEL在该光脉冲的注入下,输出光将在两个互相垂直的方向之间发生周期性转化,且变化周期与M-VCSEL所受到的调制脉冲电流周期相同;通过改变M-VCSEL驱动脉冲电流的调制幅度,可控制S-VCSEL输出的垂直偏振抑制比.关键词:垂直腔表面发射激光器(VCSEL)光脉冲偏振开关  相似文献   

8.
质子注入型面发射激光器相干耦合阵列能够实现同相模式的激射,但是由于制作过程中的工艺不均匀性引起单元间存在相位差,影响光束的质量。本文通过设计分离电极结构,使每个单元注入的电流得到分别的控制,实现了3单元三角排列阵列高光束质量同相耦合模式的激射。阵列远场发散角仅为3.4°,大约有25.6%的全部能量聚集在中心光斑。激射光谱的线宽为0.24nm,边模抑制比为27dB。该方法能够有效提高相干耦合阵列的光束质量,弥补制作工艺中引入的单元不均匀性,提高器件的可靠性和实用性。质子注入方法简单、成本低,能够成为制作高光束质量相干耦合阵列的一个重要方法。

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9.
    
Polarization plays a critical role in optical systems that range from optical communications to imaging, lithography, metrology, and data storage. Thus, in systems that need to generate a certain polarization state, a light source (e.g., laser) is combined with polarization control elements such as polarizers, polarizing beam splitters, and waveplates. Similarly, in systems requiring polarization state detection, such elements are combined with photodetectors. There is currently a trend toward miniaturized optical systems. This motivates the question of how to achieve what may be argued as an ultimate level of miniaturization: a single chip that can both generate light with a prescribed polarization state and detect the polarization state of light impinging upon it. This paper demonstrates this via vertical cavity surface emitting lasers (VCSELs) with on-facet metasurfaces. Two classes of devices are demonstrated. The first class uses high-index dielectric metasurfaces (amorphous silicon nanofins), whereas the second class uses plasmonic metasurfaces (aluminum bilayer gratings). Each can operate as a laser (to generate) and as a photodetector (to detect) circularly or linearly polarized light.  相似文献   

10.
陈静  李相民 《光学技术》2004,30(6):696-698
通过分析垂直腔面发射激光器的速率方程,并结合电子电路的特点,建立了等效电路模型。采用数值计算和电路模拟两种方法给出了垂直腔面发射激光器的频率响应特性。通过分析,证明了电路模型的正确性。通过电路模拟得出了脉冲调制的响应特性,验证了激光器固有的电光延迟和张驰振荡现象。  相似文献   

11.
垂直腔面发射激光器热特性的实验研究   总被引:4,自引:2,他引:4  
高洪海  林世鸣 《光子学报》1997,26(6):522-526
本文通过对垂直腔面发射激光器发光波长随器件本身温度变化的实验研究,得到了我们研制的垂直腔面发射激光器在连续工作状态下内部温度升高的值,并且通过对激光器脉冲激射阈值随器件本身温度变化的关系研究,得到了我们现有工艺条件下,研制低阈置器件所需的实验数据.  相似文献   

12.
光子晶体垂直腔面发射激光器的电流分布研究   总被引:2,自引:0,他引:2  
对氧化限制型外腔式光子晶体垂直腔面发射激光器注入到有源区的电流密度分布进行了分析研究.提出三维电流分布计算模型,研究了光子晶体结构对电流密度分布和器件串联电阻的影响.研究发现,光子晶体孔刻蚀深度越深,电流分布圆对称性越差,引起的串联电阻越大.不同光子晶体图案对电流分布的均匀性和圆对称性也有很大的影响.该模型对于研究、设计氧化限制型外腔式光子晶体垂直腔面发射激光器提供了一个有用的分析方法.  相似文献   

13.
The characteristics of a wavelength tunable vertical cavity surface emitting laser diode (VCSEL) with an external short cavity are analyzed, in which the oscillation wavelength can be changed over several tens of nanometers with a nearly constant optical power by slightly altering the external cavity length. Analysis is based on rate equations for the optical power and carrier density, taking the effect of carrier-induced refractive index change into consideration, together with the study of behaviors of a complex resonator. The reflection coefficient r2 of a laser facet facing the external mirror is shown to affect notably the characteristics of wavelength tuning, optical power and carrier density for a change of the external cavity length. It is also noticed that the wavelength change for this length becomes slower with relatively larger r2 due to an increasing contribution of the effect of carrier-induced refractive index change, within the optical gain spectrum of the laser diode.  相似文献   

14.
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解意洋  阚强  徐晨  许坤  陈弘达 《中国物理 B》2017,26(1):14203-014203
The characteristics of the photonic crystal vertical cavity surface emitting lasers(PhC-VCSELs) were investigated by using the full vector finite-difference time-domain(FDTD) method through the transverse mode loss analysis. PhC-VCSELs with different photonic crystal structures were analyzed theoretically and experimentally. Through combining the dual mode confinement of oxide aperture and seven-point-defect photonic crystal structure, the PhC-VCSELs with low threshold current of 0.9 mA and maximum output power of 3.1 mW operating in single fundamental mode were demonstrated. Mode loss analysis method was proven as a reliable and useful way to analyze and optimize the PhC-VCSELs.  相似文献   

15.
We report on experimental demonstration of an impulse radio ultrawideband (IR-UWB) based converged communication and sensing system. A 1550-nm VCSEL-generated IR-UWB signal is used for 2-Gbps wireless data distribution over 800-m and 50-km single mode fiber links which present short-range in-building and long-reach access network applications. The IR-UWB signal is also used to simultaneously measure the rotational speed of a blade spinning between 18 and 30 Hz. To the best of our knowledge, this is the very first demonstration of a simultaneous gigabit UWB telecommunication and wireless UWB sensing application, paving the way forward for the development and deployment of converged UWB VCSEL-based technologies in access and in-building networks of the future.  相似文献   

16.
液晶与垂直腔面发射半导体激光器(VCSELs)阵列结合可实现波长可调谐、偏振精确控制等,同时液晶的引入也会改变垂直腔面发射半导体激光器阵列的热特性,本文设计了表面液晶-垂直腔面发射激光器阵列结构,并开展了阵列的热特性实验研究.对比分析了向列相液晶层对VCSEL阵列热特性的影响,实验结果表明,1×1,2×2,3×3三种表...  相似文献   

17.
赵红东  彭晓灿  马俐  孙梅 《发光学报》2016,37(8):996-1001
为了分析质子轰击垂直腔面发射激光器(VCSEL)中注入电流引起的激光模式竞争过程,在三维空间中对VCSEL激射后光电热进行了研究。给出仿真光电热的方程之后,在室温连续工作条件下,对电流孔半径r为4μm、阈值电流Ith为4.5mA的VCSEL进行自洽求解。当注入电流Iin分别为5.0,5.5,6.0mA时,得到了对应的外加电压和输出光功率,并绘制了VCSEL的电势、注入电流、载流子、光场和热场的空间分布,给出了连续工作下输出光功率随注入电流变化的曲线。仿真结果表明:随着注入VCSEL中的电流增加,电流密度增大,激光的横向基模和横向一阶模式同时增强。横向一阶模式增加的强度及扩展的范围大于横向基模,激光输出能量逐渐向横向一阶模式过渡,横向模式竞争的同时产生载流子空间烧孔,因此在电流孔半径r≥μm的VCSEL中,连续工作激光模式不稳定。

  相似文献   

18.
刘发  徐晨  赵振波  周康  解意洋  毛明明  魏思民  曹田  沈光地 《物理学报》2012,61(5):54203-054203
用时域有限差分方法对氧化孔限制型外腔式光子晶体垂直腔面发射激光器 (VCSEL) 在小氧化孔下氧化孔形状对激光器模式特性的影响进行了模拟计算. 建立了三维光子晶体面发射激光器光场计算模型, 分析了氧化孔形状变化对器件远场特性与频率特性的影响. 研究发现, 氧化孔形状可影响光子晶体VCSEL的模式特性, 尤其是频谱特性. 从模场分布的角度可解释为菱形氧化孔的对称性与高阶模的不一致. 但随着光子晶体刻蚀深度的增加和氧化孔的增大, 这种影响逐渐减小, 分析解释了其原因. 研究结果为提高光子晶体面发射激光器的性能提供了参考.  相似文献   

19.
钟东洲  曾能  杨华  徐喆 《物理学报》2021,(7):154-166
基于外部光注入的光泵浦自旋垂直腔表面发射激光器(vertical cavity surface-emitting laser,VCSEL)的两个混沌偏振分量,提出了对两个复杂形状目标中的多区域精确测距方案.这里,两个混沌偏振探测波具有飞秒量级快速动态并且被双极性sinc波形调制,使它们具有时空不相关特性.利用这些特性,...  相似文献   

20.
张晓旭  张胜海  吴天安  孙巍阳 《物理学报》2016,65(21):214206-214206
基于自旋反转模型,研究了1550 nm垂直腔面发射激光器(1550 nm-VCSELs)在偏振保持光反馈和正交光注入下的偏振转换特性.结果表明:正交光注入下的从激光器会随着注入强度的增加产生偏振转换.在归一化注入电流较小时,改变反馈强度,会使从激光器发生偏振转换的注入强度出现规律不同的变化;改变频率失谐,会使从激光器发生偏振转换的注入强度出现规律相同的变化.  相似文献   

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