TiO_2薄膜的硼掺杂对TiO_2/p~+-Si异质结器件电致发光的增强

利用磁控溅射在重掺硼硅(p+-Si)衬底上分别沉积TiO2薄膜和掺硼的TiO2(Ti O2∶B)薄膜,并经过氧气氛下600℃热处理,由此形成相应的TiO2/p+-Si和TiO2∶B/p+-Si异质结。与Ti O2/p+-Si异质结器件相比,TiO2∶B/p+-Si异质结器件的电致发光有明显的增强。分析认为:TiO2∶B薄膜经过热处理后,B原子进入TiO2晶格的间隙位,引入了额外的氧空位,而氧空位是TiO2/p+-Si异质结器件电致发光的发光中心,所以上述由B掺杂引起的氧空位浓度的增加是TiO2∶B/p+-Si异质结器件电致发光增强的原因。     

SnO_2/p~+-Si异质结器件的电致发光:利用TiO_2盖层提高发光强度

通过在重掺硼硅(p+-Si)衬底上溅射SnO2薄膜并在O2气氛下800℃热处理形成SnO2/p+-Si异质结.基于该异质结的器件可在低电压(电流)驱动下电致发光.进一步地,通过在SnO2薄膜上增加TiO2盖层,使器件的电致发光获得显著增强.这是由于TiO2盖层的引入,一方面使SnO2薄膜更加致密,减少了非辐射复合中心;另一方面TiO2较大的折射率和合适的厚度使SnO2薄膜电致发光的出光效率得到提高.     

紫外光下纳米TiO2薄膜亲水性机理的电化学研究

利用溶胶 凝胶方法在透明导电玻璃ITO (SnO2 ∶In)表面制备纳米TiO2 薄膜 ,XRD谱图表明TiO2 是锐钛矿晶型 ,AFM (Atomic Force Microscope)测得薄膜表面粒子约为 10 0nm .研究了ITO表面纳米TiO2 薄膜的光致亲水性变化 .通过循环伏安技术测定TiO2 薄膜电极在 2 5 3.7nm的紫外光照射后的电化学行为推测光致亲水性机理 .发现在紫外光照射一定时间后 ,TiO2 薄膜电极的循环伏安图在 +0 .0 35V处出现新的氧化峰 ;且随光照时间的增加 ,氧化峰的峰电流增大 ,溶液中的溶解氧对峰电流的大小有明显影响 .实验表明 ,在紫外光照下电极表面有Ti3 + 产生 ,证实了TiO2 薄膜的光致亲水性转变过程与Ti3 + 的生成导致的表面结构变化有关     

氧气后处理对氧化锌薄膜紫外发射性质的影响

为了提高ZnO光发射效率和制备p型ZnO,对热处理的氧分压对薄膜的结构、形貌、光致光发射和ZnO/Si异质结的Ⅰ-Ⅴ特性的影响进行了研究.用直流反应溅射法在p型硅衬底上生长ZnO薄膜形成n-ZnO/P-Si异质结.在1000℃下用不同比例的氧和氨热处理,我们发现,在纯氮气中得到的样品有强的紫外发射(390nm),随氧气比例增大,紫外增强,同时绿光也产生并随之增强.但过大的氧分压反而产生多的受主缺陷,使越来越多的激发能量转移到发射能量低的绿光中心,从而使紫外减弱.在纯氧和无氧条件下热处理的俄歇谱表明纯氧下氧过量,而无氧下锌大大过量.ZnO/p-Si异质结的Ⅰ-Ⅴ特性表明,无氧热处理表现为典型的n-ZnO/p-Si异质结;而在纯氧气氛中处理后所得Ⅰ-Ⅴ曲线反向,这表明在高氧压下受主缺陷的产生,表明ZnO薄膜有可能由于高氧压热处理由n型转为p型.     

a-Si(n)/c-Si(p)异质结太阳电池薄膜硅背场的模拟优化

采用AFORS-HET数值模拟软件,对不同带隙的薄膜硅材料在a-Si(n)/c-Si(p)异质结太阳电池上的背场效果进行了模拟,分析了影响背场效果的原因,得到了薄膜硅背场在a-Si(n)/c-Si(p)异质结太阳电池上的适用条件为薄膜硅材料是带隙16 eV,硼掺杂浓度在10¹⁸cm^-3以上的微晶硅材料,其最佳厚度在5nm左右. 这种背场从工艺上易于实现,并且,与常用的Al扩散背场相比,在相同的掺杂浓度下,电池效率可以大大提高. 关键词： 薄膜硅 背场 硅异质结太阳电池     

ZnO/Si异质结的光电转换特性研究

利用直流反应溅射方法在p型Si衬底上生长掺Al的n型ZnO薄膜,测量了由n型ZnO薄膜和p型Si衬底组成的异质结在黑暗和光照条件下的I-V特性,结果表明该异质结具有优良的整流特性,而且在光照条件下的反向电流迅速增大并很快趋于饱和.通过测量ZnO薄膜的光电流和异质结的光电压的光谱响应,初步分析了异质结的光电转换机理.测量结果显示,在入射光波长为380nm时光电流强度明显下降,反映出光电流与ZnO薄膜禁带宽度的密切关系;同时还发现,在与ZnO禁带宽度相对应的波长前后所产生的光生电压方向相反.推测这一现象与异质结的能带结构密切相关. 关键词： ZnO薄膜 异质结 光电转换 光谱响应     

原子尺度控制钙钛矿氧化物薄膜的异质外延生长和特性研究

用激光分子束外延,原子尺度控制的外延生长出多种钙钛矿氧化物异质结.X射线衍射和原子力显微镜测量结果表明,在Si基底上生长的SrTiO3和LaAlO3薄膜具有很好的外延结构和取向,其表面达到原子尺度的光滑.YBCO/SrNb0.01Ti0.99O3、La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3(LSMO/SNTO)等异质结,均观测到较好的p-n结I-V特性.首次观测到钙钛矿结构氧化物p-n结电流的磁调制和正巨磁电阻效应,在255K条件下,当外加磁场分别为5×10-4T、1×10-3T、1×10-2T和0.1T时,LSMO/SNTO p-n结的磁电阻变化率ΔR/R0达到:46.7%、59.7%、70.5%和83.4%;当外加磁场为3T时,在100K条件下,在LSMO/SNTO多层p-n异质结上观测465%的正磁电阻变化率.     

Si基Bi4Ti3O12铁电薄膜的制备与特性研究

采用sol-gel工艺,在分层快速退火的工艺条件下成功地制备了高质量Si基BiTi3O12铁电薄膜.研究了Si基Bi4Ti3O12薄膜的生长行为、铁电性能、C-V特性和疲劳特性.研究表明:Si基Bi4Ti3O12薄膜具有随退火温度升高沿c轴择优生长的趋势;退火温度通过影响薄膜的晶粒尺寸、生长取向和薄膜中载流子的浓度来改变Si基Bi4Ti3O12薄膜的铁电性能;Ag/Bi4Ti3O12/p-Si异质结的C-V特性曲线呈现顺时针回滞,可以实现极化存储;109次极化反转后Bi4Ti3O12薄膜的剩余极化仅下降12%,具有较好的疲劳特性.     

CVD法制备p-ZnO薄膜/n-Si异质结发光二极管及其性能研究

利用简单的化学气相沉积方法, 首先在n-Si衬底上生长Sb掺杂p-ZnO薄膜, 并在此基础上制作了p-ZnO/n-Si异质结发光二极管．对制备的Sb掺杂ZnO薄膜 在800 ℃下进行了热退火处理, 发现退火后样品的晶体质量和表面形貌都得到明显提高, 并且薄膜呈现的电导类型为p型, 载流子浓度为9.56× 10¹⁷ cm^-3. 此外, 该器件还表现出良好的整流特性, 正向开启电压为4.0 V, 反向击穿电压为9.5 V. 在正向45 mA的注入电流条件下, 器件实现了室温下的电致发光. 这说明较高质量的ZnO薄膜也可以通过简单的化学气相沉积方法来实现, 这为ZnO基光电器件的材料制备提供了一种简单可行的方法. 关键词： CVD p-ZnO 异质结 电致发光     

TiO_2/Sm~(3+)下转换薄膜的制备及其在染料敏化太阳能电池中的应用

采用溶胶-凝胶法制备了TiO2/Sm3+下转换薄膜,利用其下转换特性将紫外光转换为可见光,提高了可见光光照强度。利用X射线衍射和荧光光谱对TiO2/Sm3+粉体进行了表征,并对TiO2/Sm3+下转换薄膜进行了荧光光谱测试和紫外-可见分光光度计测试。荧光光谱显示,TiO2/Sm3+薄膜在受到395 nm紫外光照射时可发射出540~600 nm连续波长的可见光,具有下转换特性。二层TiO2/Sm3+下转换薄膜的可见光透过率与单纯的TiO2薄膜基本相同,利用其下转换特性使电池短路电流提高了13.2%,光电转换率提高了16.2%。     

低温铝诱导晶化制备纳米晶硅薄膜的物相和光学性能研究

采用射频磁控溅射镀膜系统,在玻璃衬底上制备了非晶硅(α-Si)/铝(Al)复合薄膜,结合氮气(N₂)气氛中低温快速光热退火制备了纳米晶硅(nc-Si)薄膜;利用光学显微镜、共焦光学显微仪、X射线衍射(XRD)仪、拉曼散射光谱(Raman)仪和紫外-可见光-近红外分光光度计(UV-VIS-NIR)对纳米晶硅薄膜的表面形貌、物相及光学性能进行了表征,研究了退火工艺对薄膜性能的影响。结果表明： 300 ℃,25 min光热退火可使α-Si/Al膜晶化为纳米晶硅薄膜,晶化率为15.56%,晶粒尺寸为1.75 nm;退火温度从300 ℃逐渐升高到400 ℃,纳米晶硅薄膜晶粒尺寸、晶化率、带隙逐渐增加,表面均匀性、晶格畸变量逐渐减小;退火温度从400 ℃逐渐升高到500 ℃,纳米晶硅薄膜的晶粒尺寸、晶化率继续增加,带隙则逐渐降低;采用纳米晶硅薄膜的吸光模型验证了所制备的纳米晶硅薄膜的光学特性,其光学带隙的变化趋势与吸光模型得出的结果一致。     

光电变色器件用纳米晶氧化钛薄膜的微结构与特性

纳米晶TiO2薄膜在光电变色器件中具有很重要的作用。它的微结构直接影响染料的吸附、光的散射以及电荷输运的特性。因此，探索TiO2薄膜的微结构(如粒径、表面形貌和厚度等)及光电性能是非常有意义的。采用电子束蒸发工艺制备了光电变色器件用纳晶TiO2薄膜，利用原子力显微镜、X射线衍射、俄歇电子能谱等手段对纳米晶TiO2薄膜的表面形貌、结晶状态及组分进行了分析。从理论上研究和讨论了纳米晶TiO2薄膜晶粒尺寸对光电性能的影响，并用量子限制效应解释了吸收光谱峰值波长随粒径减小而发生蓝移的现象。     

Morphology and properties of ZnO films obtained by repeated spin coating on porous silicon substrates

Layers of porous silicon (PS), multilayered ZnO films, and heterostructures based on them are obtained. The surface morphology, chemical and phase composition of the PS layers and ZnO films, and the transverse cleavage of ZnO–PS nanocomposite, are investigated via energy-dispersive X-ray spectral analysis (EDX), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The current–voltage characteristics of Al/Ag/p-Si(100)/PS/ZnO/Ag/Al and Al/Ag/p-Si(100)/PS/ZnO/SiC/Ag/Al heterostructures are studied.     

纳米TiO_2薄膜的带宽研究(英文)

利用磁控溅射方法制备了纳米TiO2 薄膜,通过Raman光谱和UV Vis光谱讨论了TiO2 薄膜的带宽随着厚度变化的规律。随着薄膜厚度的增加,TiO2 薄膜的带宽变窄,这是由于纳米薄膜的纳米效应所致     

Optical properties of anatase and rutile TiO_2 studied by GGA + U

The optical properties of thermally annealed TiO_2 samples depend on their preparation process, and the TiO_2 thin films usually exist in the form of anatase or rutile or a mixture of the two phases. The electronic structures and optical properties of anatase and rutile TiO_2 are calculated by means of a first-principles generalized gradient approximation(GGA) +U approach. By introducing the Coulomb interactions on 3d orbitals of Ti atom(U~d) and 2p orbitals of O atom(U~p), we can reproduce the experimental values of the band gap. The optical properties of anatase and rutile TiO_2 are obtained by means of the GGA+U method, and the results are in good agreement with experiments and other theoretical data. Further, we present the comparison of the electronic structure, birefringence, and anisotropy between the two phases of TiO_2. Finally,the adaptability of the GGA+U approach has been discussed.     

Vis-NIR characteristics of amorphous germanium films and electrical properties of a-Ge/<Emphasis Type="Italic">p</Emphasis>-Si heterostructures obtained by pulsed-laser deposition method

Optical properties of a-Ge films (glass substrate) and electrical properties of a-Ge/p-Si heterostructures obtained by the pulsed-laser deposition method have been studied. It is shown that optical properties of a-Ge films can be well explained by the Tauc model for amorphous semiconductors. The dependence of optical gap on the film thickness is obtained for a-Ge films. Forward-bias current-voltage characteristics of the a-Ge/p-Si heterostructures are satisfactorily approximated by the relation for current density J = CV ^m , where m varies from 1.45 to 1.95 depending on the applied forward bias and a-Ge film thickness. Also, for the mentioned heterostructure (a-Ge film thickness is 400 nm) nearly quadratic dependence of the current density is observed, which indicates the predominance of the space-charge-limited current.     

Sb掺杂纳米TiO2光催化剂的晶体结构与光催化性能

用溶胶-凝胶法将纳米TiO2:Sb薄膜沉积在玻璃基板上．通过XRD、Raman光谱研究了Sb掺杂量对薄膜的晶体结构和晶相转变的影响．结果表明:纯TiO2薄膜中,TiO2不仅以无定型态存在,而且还以板钛矿和锐钛矿的形式存在．掺入适量的Sb后,由于Sb替代了TiO2的部分Ti形成Sb-O-Ti结构,改变了TiO2的晶格结构,改善了薄膜的结晶效率,使锐钛矿结构的TiO2:Sb含量明显提高．掺杂0．2％Sb时,薄膜的结晶效率最高．254 nm光源照射时,掺杂0．2％Sb的电极的阳极光电流密度可达42．49μA／cm2,是用同种方法制备的纯TiO2薄膜电极的近11倍;对亚甲基蓝具有最高分解性能,其一级反应速率常数为0．171 h／cm2,是未掺杂的纯TiO2薄膜的近2倍．     

TiO_2-Loaded WO_3 Composite Films for Enhancement of Photocurrent Density

Titanium dioxide(TiO_2) loaded tungsten trioxide(WO_3) composite films are prepared by an E-beam vapor system. Associated with the existence of a heterojunction at the interface of TiO_2 and WO_3, the prepared TiO_2-WO_3 composite film shows enhanced photocurrent density; four times than the pure WO_3 film illuminated under xenon lamp, and higher incident-photon-to-current conversion efficiency. By varying the initial TiO_2 film thickness, such composite structures could be optimized to obtain the highest photocurrent density. We believe that thin TiO_2 films improve the light response and increase the surface roughness of WO_3 films. Furthermore,the existence of the heterojunction results in the efficient charge carriers' separation, transfer process, and a lower recombination of electron-hole pairs, which is beneficial for the enhancement of photocurrent density.     

Synthesis of Different TiO_2 Nanostructures and Their Physical Properties

Titanium dioxide(TiO_2) nanosheet, nanorod and nanotubes are synthesized using chemical vapor deposition(CVD) and anodizing processes. TiO_2 nanosheets are grown on Ti foil which is coated with Au catalyst in CVD,TiO_2 nanorods are synthesized on treated Ti foil with HCI by CVD, and TiO_2 nanotubes are prepared by the three-step anodization method. Scanning electron microscopy shows the final TiO_2 structures prepared using three processes with three different morphologies of nanosheet, nanorod and nanotube. X-ray diffraction verifies the presence of TiO_2. TiO_2 sheets and rods are crystalized in rutile phase, and TiO_2 tubes after annealing turn into the anatase crystal phase. The optical investigations carried out by diffuse reflection spectroscopy reveal that the morphology of TiO_2 nanostructures influencing their optical response and band gap energy of TiO_2 is changed for different TiO_2 nanostructures.     

Compositional and structural evolution of the titanium dioxide formation by thermal oxidation

Titanium oxide films were prepared by annealing DC magnetron sputtered titanium films in an oxygen ambient. X-ray diffraction （XRD）, Auger electron spectroscopy （AES） sputter profiling, MCs^＋-mode secondary ion mass spectrometry （MCs^＋-SIMS） and atomic force microscopy （AFM） were employed, respectively, for the structural, com- positional and morphological characterization of the obtained films. For temperatures below 875 K, titanium films could not be fully oxidized within one hour. Above that temperature, the completely oxidized films were found to be rutile in structure. Detailed studies on the oxidation process at 925K were carried out for the understanding of the underlying mechanism of titanium dioxide （TiO2） formation by thermal oxidation. It was demonstrated that the formation of crystalline TiO2 could be divided into a short oxidation stage, followed by crystal forming stage. Relevance of this recognition was further discussed.