条形畴结构的FeCoAlON薄膜磁性的研究

用磁控射频溅射法制备了FeCoAlON薄膜, 研究了Al-O和N元素的添加对FeCo合金薄膜的软磁性的影响. 研究结果表明: 随着Al, O, N元素添加量的增加, 薄膜微结构从多晶转化到纳米晶再转化到非晶态, 薄膜表现为软磁性; 在N的含量较高时, 薄膜呈现条形畴结构, 本文对条形畴结构出现的机理和条件作了详细讨论, 并发现具有条形畴结构的薄膜的磁导率频率特性具有多峰共振的特点. 关键词： 铁钴基合金 薄膜 条形畴     

The structure and magnetic properties of amorphous magnetic thin films

A review of the structural and magnetic properties of amorphous ferromagnetic and ferrimagnetic thin films is presented. An attempt is made to report structural information on atomic and microstructural scales, and to stress its relevance to the magnetic properties of these materials. The more obvious microstructural features of deposited films are not present in the other important type of amorphous magnetic material prepared by rapid quenching from the melt, and present opportunities for differences in structure dependent magnetic properties. In the main, three classes of amorphous magnetic films are considered. Ferromagnetic transition metal (TM) films which are metastable only at temperatures well below room temperature are discussed. Their importance lies in the fact that they clearly represent the most fundamental amorphous phase. Ferromagnetic transition metal-metalloid (TM-Me) alloys have potential applications as magnetically soft materials. These alloys are, perhaps, the most studied amorphous magnetic materials both in deposited thin film and rapidly quenched ribbon forms. Finally, amorphous rare earth-transition metal (RE-TM) films are reviewed. They exhibit a wide variety of magnetic properties encompassing both extremely low and very high coercivities and also perpendicular magnetic anisotropy. The possible application of these materials in various types of device has encouraged much detailed research into their magnetic properties. This has highlighted the importance of preparation conditions and microstructure in defining their properties.     

Ni-Zn铁氧体薄膜的结构和磁性

采用交替溅射方法制备了Ni_Zn铁氧体薄膜，并研究了薄膜成分和制 备条件例如热处理温度、氧分压、膜厚、衬底层等因素对Ni_Zn铁氧体薄膜的影响.实验表明沉积态薄膜为非晶态，经大气中不同温度热处理后得到了尖晶石结构，其主峰为(311)峰 .另外，通过不同条件对Ni_Zn铁氧体薄膜的研究，找到了合适的Ni_Zn铁氧体薄膜的制备条件. 关键词： 薄膜 Ni_Zn铁氧体 交替溅射     

Synthesis and characterization of Ni-implanted and 200-MeV Ag ion-irradiated CeO2 thin films

CeO₂ thin films were deposited on quartz substrates by using the rf-sputtering technique. The 80-keV Ni^- ion-implanted and, subsequently, post-annealed films have shown the formation of Ni oxide and Ni metallic phases at 7 at% of Ni concentration. Such secondary phases were dissolved by swift heavy ion irradiation with 200-MeV Ag⁺¹⁵ ion beams. Structural properties, surface roughness, and magnetic behavior of the samples were investigated by X-ray diffraction, atomic force microscopy, and hysteresis loop measurements, respectively. Dissolution of secondary phases has been discussed in the light of irradiation-induced local temperature rise and energy loss processes.     

Investigation of structure and magnetic properties of the as-deposited and post-annealed iron nitride films by reactive facing-target sputtering

Structure and magnetic properties of the as-deposited and post-annealed iron nitride films have been investigated systematically. A series of phases containing α-Fe, ?-Fe₃N, ξ-Fe₂N and γ″-FeN were obtained as nitrogen flow rate (FN₂) increases from 0.5 to 30 sccm. An increase of the nitrogen concentration in the as-deposited films could be concluded from the phase transition with the increasing FN₂. After being annealed, some of the iron nitride phases are decomposed and γ′-Fe₄N appears in the films. The magnetic characteristics are dependent on FN₂, which can be ascribed to the facts that the nitrogen in the films turns the valence states of Fe into Fe⁺ or Fe^dipole with high magnetic momentum or ever H-like bond Fe^+/dipole with low magnetic momentum based on the bond-band-barrier correlation mechanism.     

Strain-induced modification of magnetic structure and new magnetic phases in rare-earth epitaxial films

Rare earths exhibit complex magnetic phase diagrams resulting from the competition between various contributions to the magnetic energy: exchange, anisotropy and magnetostriction. The epitaxy of a rare-earth film on a substrate induces (i) a clamping to the substrate and (ii) pseudomorphic strains. Both these effects are shown to lead to modifications of the magnetic properties in (0 0 1)Dy, (0 0 1)Tb and (1 1 0)Eu films. In Dy and Tb films, spectacular variations of the Curie temperature have been evidenced. Additionally, Tb films exhibit a new large wavelength magnetic modulation. In Eu films, one of the helical magnetic domains disappears at low temperature whereas the propagation vectors of the other helices are tilted. The link between structural and magnetic properties is underlined via magnetoelastic models. Moreover, molecular beam epitaxy permits the growth of Sm in a metastable dhcp phase. The magnetic structure of dhcp Sm has been elucidated for the first time. In this review, neutron scattering is shown to be a powerful technique to reveal the magnetic structures of rare-earth films.     

Structure and magnetic properties of Co-CoO films with layered structure

Co-CoO multi-layered films were prepared using the rf sputtering method by modulating the substrate bias voltage. The multi-layered film with 80 Å modulation period had an extremely low-in-plane coercivity and multi-domain structure of the in-plane magnetization with random direction. The films with 220 and 60 Å modulation period show maze domains.     

Heat-treatment effect on structure and magnetic properties of hard magnetic Co-W films for perpendicular magnetic recording

The variations of coercivity for different preferred orientation (PO) of electrodeposited Co-W films with perpendicular magnetic anisotropy are demonstrated by manipulating the inter-particle separation through the heat-treatment effect. The character of the dependences corresponds to magnetization reversal of the films with (002) PO by the rotational mechanism.     

Local measurements of magnetic characteristics of high-temperature superconducting films

A new experimental technique for measuring magnetic characteristics of high-temperature superconducting (HTS) films is described. The measurement system includes a laser providing for local measurements. The measured magnetic characteristics of the HTS films are of scientific and practical interest.     

Effects of Cr underlayer and Pt buffer layer on the interfacial structure and magnetic characteristics of sputtered FePt films

This work develops a new method for growing L1₀ FePt(0 0 1) thin film on a Pt/Cr bilayer using an amorphous glass substrate. Semi-coherent epitaxial growth was initiated from the Cr(0 0 2) underlayer, continued through the Pt(0 0 1) buffer layer, and extended into the L1₀ FePt(0 0 1) magnetic layer. The squareness of the L1₀ FePt film in the presence of both a Cr underlayer and a Pt buffer layer was close to unity as the magnetic field was applied perpendicular to the film plane. The single L1₀ FePt(1 1 1) orientation was observed in the absence of a Cr underlayer. When a Cr underlayer is inserted, the preferred orientation switched from L1₀ FePt(1 1 1) to L1₀ FePt(0 0 1) and the magnetic film exhibited perpendicular magnetic anisotropy. However, in the absence of an Pt intermediate layer, the Cr atoms diffused directly into the FePt magnetic layer and prevented the formation of the L1₀ FePt(0 0 1) preferred orientation. When a Pt buffer layer was introduced between the FePt and Cr underlayer, the L1₀ FePt(0 0 1) peak appeared. The thickness of the Pt buffer layer also substantially affected the magnetic properties and atomic arrangement at the FePt/Pt and Pt/Cr interfaces.     

FeCoBSiO2磁性纳米颗粒膜的微波电磁特性

采用交替沉积磁控溅射工艺制备了超薄多层的FeCoBSiO2磁性纳米颗粒膜.利用x射线衍射仪、扫描探针显微镜、透射电子显微镜分析了薄膜的微结构和形貌特征.采用振动样品磁强计、四探针法、微波矢量分析仪及谐振腔法测量薄膜试样的磁电性能和微波复磁导率.重点对SiO2介质相含量、薄膜微结构对电磁性能产生重要影响的机理做了分析和探讨.结果 表明：这类FeCoBSiO2磁性纳米颗粒膜具有良好的软磁性能和高频电磁性能，2GHz时的 磁导率μ′高于70，可以应用于高频微磁器件或微波吸收材料的设计. 关键词： 磁性纳米颗粒膜 高频特性 复磁导率 磁控溅射     

FeCoB-SiO2磁性纳米颗粒膜的微波电磁特性

采用交替沉积磁控溅射工艺制备了超薄多层的FeCoB SiO2 磁性纳米颗粒膜 .利用x射线衍射仪、扫描探针显微镜、透射电子显微镜分析了薄膜的微结构和形貌特征 .采用振动样品磁强计、四探针法、微波矢量分析仪及谐振腔法测量薄膜试样的磁电性能和微波复磁导率 .重点对SiO2 介质相含量、薄膜微结构对电磁性能产生重要影响的机理做了分析和探讨 .结果表明 :这类FeCoB SiO2 磁性纳米颗粒膜具有良好的软磁性能和高频电磁性能 ,2GHz时的磁导率 μ′高于 70 ,可以应用于高频微磁器件或微波吸收材料的设计     

Imaging the magnetic spin structure of exchange-coupled thin films

We have investigated the magnetic spin structure of a soft-magnetic film that is exchange-coupled to a hard-magnetic layer to form an exchange-spring layer system. The depth dependence of the magnetization direction was determined by nuclear resonant scattering of synchrotron radiation from ultrathin 57Fe probe layers. In an external field a magnetic spiral structure forms that can be described within a one-dimensional micromagnetical model. The experimental method allows one to image vertical spin structures in stratified media with unprecedented accuracy.     

Investigation of magnetic properties for oblique deposited granular films by magnetic field annealing

A series of (Fe₅₇Co₂₄Ni₄Nb₂B₁₃)_x-(SiO₂)_1−x nano-granular thin films were fabricated by magnetron sputtering with different oblique incidence angle θ and excellent soft magnetic properties are achieved. Based on the results of magnetic field anneal at different temperature T_a, it is evidenced that orientation of atomic pairs contributes to the annealing treatment, and could manipulate magnetic anisotropy. The damping coefficient α decreases with increasing angle θ and this is ascribed to the anisotropy dissipation.     

Synthesis and study of the magnetic characteristics of nanocrystalline cobalt films

The effect of various technological factors on the main magnetic characteristics of nanocrystalline cobalt films obtained by chemical deposition is studied. The effective saturation magnetization, uniaxial anisotropy, coercive force, and other characteristics of local spots of films were measured using a scanning FMR spectrometer over the decimeter wavelength range. A technique for preparing substrates is developed, and the optimum technological conditions of thin-film synthesis are found making it possible to significantly decrease magnetic inhomogeneities across the area and thickness of samples. It is shown that one can significantly decrease the FMR linewidth and increase the magnetic permeability of films in a given microwave frequency range.     

On the characteristics of AlGaN films grown on (111) and (001) Si substrates

High Al-content Al_xGa_1−xN films were deposited on (001) and (111) Si substrates at 1000 °C using high temperature AlN buffer layers. Experimental results show that Al_xGa_1−xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content Al_xGa_1−xN/(111) Si samples but they were not observed in the Al_xGa_1−xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline Al_xGa_1−xN films were achieved on (111) Si substrates while columnar structure was observed in the Al_xGa_1−xN/(001) Si samples. According to the depth profiles of Al_xGa_1−xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al_xGa_1−xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the Al_xGa_1−xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.     

AlGaN barrier thickness dependent surface and interface trapping characteristics of AlGaN/GaN heterostructure

The aluminium gallium nitride (AlGaN) barrier thickness dependent trapping characteristic of AlGaN/GaN heterostructure is investigated in detail by frequency dependent conductance measurements. The conductance measurementsin the depletion region biases (−4.8 V to −3.2 V) shows that the Al_0.3Ga_0.7N(18 nm)/GaN structure suffers from both the surface (the metal/AlGaN interface of the gate region) and interface (the AlGaN/GaN interface of the channel region) trapping states, whereas the AlGaN/GaN structure with a thicker AlGaN barrier (25 nm) layer suffers from only interface (the channel region of AlGaN/GaN) trap energy states in the bias region (−6 V to −4.2). The two extracted time constants of the trap levels are (2.6–4.59) μs (surface) and (113.4–33.8) μs (interface) for the Al_0.3Ga_0.7N(18 nm)/GaN structure in the depletion region of biases (−4.8 V to −3.2 V), whereas the Al_0.3Ga_0.7N (25 nm)/GaN structure yields only interface trap states with time constants of (86.8–33.3) μs in the voltage bias range of −6.0 V to −4.2 V. The extracted surface trapping time constants are found to be very muchless in the Al_0.3Ga_0.7N(18 nm)/GaN heterostructure compared to that of the interface trap states. The higher electric field formation across the AlGaN barrier causes de-trapping of the surface trapped electron through a tunnelling process for the Al_0.3Ga_0.7N(18 nm)/GaN structure, and hence the time constants of the surface trap are less.     

用于紫外探测器DBR结构的高质量AlGaN材料MOCVD生长及其特性研究

利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同工艺条件下的高质量AlGaN材料的制备.得到了无裂纹的全组分Al_xGa_1-xN(0<x<1)薄膜.通过XRD，SEM，AFM等测量分析方法系统研究了生长工艺参数对材料的结构质量、组分、厚度和表面形貌的影响.分析了不同生长工艺对AlGaN材料特性的影响.研制的高质量AlGaN材料在紫外探测器的DBR结构应用中得到比较好的特性.     

Static magnetic characteristics nonuniform over the thickness of CoNi films

A method based on the meridional magnetooptical intensity effect is used to study the hysteresis loops on opposite sides of thin cobalt-nickel films deposited at a varying angle on a polyethyleneterephthalate substrate. A comparison of the magnetic propertes of the films on the different sides and in the bulk show that these properties change continuously over the thickness. The coercivity is always greater on the side of the film where the angle of deposition is higher. The difference in the magnetic characteristics on the opposite sides of the film is greater in thicker films. Zh. Tekh. Fiz. Zh. Tekh. Fiz. 67, 63–66 (March 1997)