GaAs integrated quantum photonics: Towards compact and multi‐functional quantum photonic integrated circuits

The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different material platforms being investigated, direct‐bandgap semiconductors and particularly gallium arsenide (GaAs) offer the widest range of functionalities, including single‐ and entangled‐photon generation by radiative recombination, low‐loss routing, electro‐optic modulation and single‐photon detection. This paper reviews the recent progress in the development of the key building blocks for GaAs quantum photonics and the perspectives for their full integration in a fully‐functional and densely integrated quantum photonic circuit.

     

Polymer-based photonic integrated circuits

A myriad of passive and active guided-wave devices has been successfully demonstrated using the photolime gel polymer. These include high density linear and curved channel waveguide arrays, electro-optic modulator and modulator arrays, highly multiplexed waveguide holograms for wavelength division demultiplexing and optical interconnects, waveguide lens, and rare-earth ion-doped polymer waveguide amplifiers. A single-mode linear channel waveguide array with device packaging density of 1250 channels cm^-1 has been achieved. The first 12-channel wavelength division demultiplexer working at 830, 840, 850, 860, 870, 880, 890, 900, 910, 920, 930 and 940 nm on a GaAs substrate is also described in this paper. A polymer-based electro-optic travelling wave modulator with 40 GHz electrical bandwidth is further delineated. A rare-earth ion-doped polymer waveguide amplifier working at 1.06 μm with 8.5 dB optical gain is also achieved using this polymer matrix. The tunability of the waveguide refractive index of photolime gel polymer allows the formation of a graded index (GRIN) layer. As a result, these active and passive guided wave devices can be realized on any substrate of interest. High quality waveguides (loss<0.1 dB cm^-1) have been made on glass, LiNbO3, fused silica, quartz, PC board, GaAs, Si, Al, Cu, Cr, Au, Kovar, BeO, Al₂O₃ and AIN.     

石墨烯-硅基混合光子集成电路

近年来硅基光子学已经慢慢走向成熟,它被认为是未来取代电子集成电路,实现下一代更高性能的光子集成电路的关键技术.这得益于硅基光子器件与现代的互补金属氧化物半导体工艺相兼容,能够实现廉价的大规模集成.然而,由于受硅材料本身的光电特性所限,在硅基平台上实现高性能的有源器件仍然存在着巨大挑战.石墨烯-硅基混合光子集成电路的发展为解决这一问题提供了可行的方案.这得益于石墨烯作为一种兼具高载流子迁移率、高电光系数和宽带吸收等优点的二维光电材料,能够方便地与现有硅基器件相集成,并充分发挥自身的光电性能优势.本文结合我们课题组在该领域研究的一些最新成果,介绍了国际上在石墨烯-硅基混合光子集成电路上的一些重要研究进展,涵盖了光源、光波导、光调制器和光探测器四个重要组成部分.     

Chalcogenide glass waveguides integrated with quantum cascade lasers for on-chip mid-IR photonic circuits

We demonstrate on-chip hybrid integration of chalcogenide glass waveguides and quantum cascade lasers (QCLs). Integration is achieved using an additive solution-casting and molding method to directly form As(2)S(3) strip waveguides on an existing QCL chip. Integrated As(2)S(3) strip waveguides constructed in this manner display strong optical confinement and guiding around 90° bends, with a NA of 0.24 and bend loss of 12.9dB at a 1mm radius (λ=4.8μm).     

Digital synthesis of programmable photonic integrated circuits

Programmable photonic waveguide meshes can be programmed into many different circuit topologies and thereby provide a variety of functions.Due to the complexity of the signal routing in a general mesh,a particular synthesis algorithm often only accounts for a specific function with a specific cell configuration.In this paper,we try to synthesize the programmable waveguide mesh to support multiple configurations with a more general digital signal processing platform.To show the feasibility of this technique,photonic waveguide meshes in different configurations(square,triangular and hexagonal meshes)are designed to realize optical signal interleaving with arbitrary duty cycles.The digital signal processing(DSP)approach offers an effective pathway for the establishment of a general design platform for the software-defined programmable photonic integrated circuits.The use of well-developed DSP techniques and algorithms establishes a link between optical and electrical signals and makes it convenient to realize the computer-aided design of optics–electronics hybrid systems.     

Polarization management for silicon photonic integrated circuits

Polarization management is very important for photonic integrated circuits (PICs) and their applications. Due to geometrical anisotropy and fabrication inaccuracies, the characteristics of the guided transverse‐electrical (TE) and transverse‐magnetic (TM) modes are generally different. Polarization‐dependent dispersion and polarization‐dependent loss are such manifestations in PICs. These issues become more severe in high index contrast structures such as nanophotonic waveguides made of silicon‐on‐insulator (SOI), which has been regarded as a good platform for optical interconnects because of the compatibility with CMOS processing. Recently, polarization division multiplexing (PDM) with coherent detection using silicon photonics has also attracted much attention. This trend further highlights the importance of polarization management in silicon PICs. The authors review their work on polarization management for silicon PICs using the polarization independence and polarization diversity methods. Polarization issues and solutions in PICs made of SOI nanowires and ridge waveguides are discussed.     

Analysis of ultra-small photonic large scale integrated circuits

A detailed study of a platform of ultra-small photonic large-scale integrated circuits was conducted. Bandgap structure calculations of silicon-on-insulator (SOI) based photonic crystals have been investigated. The photonic crystal consists of dielectric cylinders in air. Using the band structure calculations we obtained design parameters for the proposed structures. The coupling between the photonic crystal and a waveguide fabricated from SOI system has been analysed. It is shown that the optical coupling is improved by interfacing different types of spot-size converters (SSCs) between the SOI waveguide and the photonic crystal. Also, the possibility and limitations of silicon doped germanium and SOI photonic crystals to analyse the light guiding in the third dimension is discussed.     

Design method for high performance grating couplers in photonic integrated circuits

The optimization of grating couplers is usually realized by multiple simulations using specific computational software for this task. Many grating parameters must be analyzed and designed to get the maximum coupling efficiency and the transmission spectrum centred at the wavelength of operation. However, these simulations may take a long time and consume high computational resources depending on the simulation resolution. This work is focused on finding a method to optimize the grating parameters with the lowest number of simulations. In this way, closed-form expressions are presented to get the optimal values for the period and fill-factor, which are the main parameters in the grating design. The usefulness of the proposed approach is shown for the design of silicon grating couplers operating at 1.31 µm and 1.55 µm and both TE and TM polarizations.     

Three-dimensional gap plasmon power splitters suitable for photonic integrated circuits

In this paper we have investigated the performance of a nano-optical power splitter based on gap plasmon waveguides. The structure consists of the rectangular gap plasmon waveguides in metal films. It is clear that the wave number and correspondingly light confinement and the loss in the waveguides are the most effective parameters in power splitting, but as we know coupling length is another important factor which should be considered. Some dependencies of the coupling length and the maximum transfer power on the structure parameters are studied. It has been shown that approximately 43% transfer power for each arm of the splitter is achievable. Simulation results have been obtained by the compact finite-difference time-domain method. The considered structures, because of their small coupling length and dimensions are appropriate for implementation in photonic integrated circuits.     

Intermixing of multiple quantum wells for all-optical integrated circuits

All-optical waveguide switches that can potentially be implemented in all-optical integrated circuits are described. These switches are presently made in either single or multiple semiconductor quantum well structures. Selective-area intermixing of the quantum wells is presented as a most viable means of achieving the passive waveguide sections for the interconnections between the switches.     

Four-wave mixing, quantum control, and compensating losses in doped negative-index photonic metamaterials

The possibility of compensating absorption in negative-index metamaterials (NIMs) doped by resonant nonlinear-optical centers is shown. The role of quantum interference and the extraordinary properties of four-wave parametric amplification of counterpropagating electromagnetic waves in NIMs are discussed.     

Deterministic separation of arbitrary photon pair states in integrated quantum circuits

Entangled photon pairs must often be spatially separated for their subsequent manipulation in integrated quantum circuits. Separation that is both deterministic and universal can in principle be achieved through anti‐coalescent two‐photon quantum interference. However, such interference‐facilitated pair separation (IFPS) has not been extensively studied in the integrated setting, which has important implications on performance. This work provides a detailed review of IFPS and examines how integrated device dependencies such as dispersion impact separation fidelity and interference visibility. The analysis applies equally to both on‐chip and in‐fiber implementations. When coupler dispersion is present, the separation performance can depend on photon bandwidth, spectral entanglement and the dispersion. By design, reduction in the separation fidelity due to loss of non‐classical interference can be perfectly compensated for by classical wavelength demultiplexing effects. This work informs the design of devices for universal photon pair separation of states with tunable arbitrary properties.

     

Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits

We propose a novel resonator containing an elliptical microring based on a silicon-on-insulator platform. Simulations using the three-dimensional finite-difference time-domain method show that the novel elliptical microring can efficiently enhance the mode coupling between straight bus waveguides and resonator waveguides or between adjacent resonators while preserving relatively high intrinsic quality factors with large free spectral range. The proposed resonator would be an alternative choice for future high-density integrated photonic circuits.     

Analysis of the plasmonic power splitter and MUX/DEMUX suitable for photonic integrated circuits

In this paper, the metal-insulator-metal (MIM) plasmonic directional coupler (PDC) with 45° waveguide bends based on surface plasmon polaritons (SPPs) excitation has been analyzed by the finite-difference time-domain (FDTD) numerical method. Effects of the variations of the coupler length and the metal gap thickness on the output powers and the propagation loss at 1550 nm wavelength have been studied. By choosing proper coupler lengths, power splitters with various output power ratios at 1550 nm wavelength and multi/demultiplexers, as some applications of the directional couplers have been proposed and their performances have been simulated.     

Disorder-induced losses in planar photonic crystals

The phenomenological approach introduced by Benisty [Appl. Phys. Lett. 76, 532 (2000)] to model out-of-plane radiation losses in planar photonic crystals with a low vertical refractive index contrast is extended to the case of in-plane disorder. The model is experimentally validated by means of optical measurements on GaAs-based structures. For the present fabrication techniques the disorder-induced contribution is found to be negligible compared with the other loss mechanisms.     

Waveguide circuits in three-dimensional photonic crystals

Waveguide circuits in three-dimensional photonic crystals with complete photonic band gaps are simulated with finite difference time domain (FDTD) simulations, and compared with measurements on microwave scale photonic crystals. The transmission through waveguide bends critically depends on the photonic crystal architecture in the bend region. We have found experimentally and theoretically, a new waveguide bend configuration consisting of overlapping rods in the bend region, that performs better than the simple waveguide bend of terminated rods, especially in the higher frequency portion of the band. Efficient beam splitters with this junction geometry are also simulated.     

Electromigration in integrated circuits

We review the mechanism of integrated circuit failure known as “electromigration.” Electromigration is a physical wearout process that operates primarily in the on-chip interconnections of an integrated circuit. It is caused by the currents that run through those interconnections. The first part of the review introduces the founding principles of electromigration and the research history upon which those principles are based. The second part introduces and reviews the increasingly relevant issue of pulsed current electromigration, and the final part contains a relatively detailed review of a recent study of pulsed current electromigration.     

Low bending loss waveguide opens the avenue to downsizing of 3D photonic integrated circuits

正Photonic integrated circuits(PIC)enable efficient and flexible control of photons within a compact space,thereby revolutionizing both information technology and biological and chemical sensing.Currently,semiconductor materials including silicon,silicon nitride(Si N),and indium phosphate(In P)are still the prominent PIC platforms,which can be patterned using mature photolithographic technologies[1].     

Experimental demonstration of a fast calibration method for integrated photonic circuits with cascaded phase shifters

With the development of research on integrated photonic quantum information processing, the integration level of the integrated quantum photonic circuits has been increasing continuously, which makes the calibration of the phase shifters on the chip increasingly difficult. For the calibration of multiple cascaded phase shifters that is not easy to be decoupled, the resources consumed by conventional brute force methods increase exponentially with the number of phase shifters, making it impossible to calibrate a relatively large number of cascaded phase shifters. In this work, we experimentally validate an efficient method for calibrating cascaded phase shifters that achieves an exponential increase in calibration efficiency compared to the conventional method, thus solving the calibration problem for multiple cascaded phase shifters. Specifically, we experimentally calibrate an integrated quantum photonic circuit with nine cascaded phase shifters and achieve a high-precision calibration with an average fidelity of 99.26%.