Modification of the photoluminescence anisotropy of semiconductor nanowires by coupling to surface plasmon polaritons

We demonstrate efficient modification of the polarized light emission from single semiconductor nanowires by coupling this emission to surface plasmon polaritons on a metal grating. The polarization anisotropy of the emitted photoluminescence from single nanowires is compared for wires deposited on silica, a flat gold film, and a shallow gold grating. By varying the orientation of the nanowire with respect to the grating grooves, the large intrinsic polarization anisotropy can be either suppressed or enhanced. This modification is interpreted by the appearance of an additional emission channel induced by surface plasmon polaritons and their conversion to p-polarized radiation at the grating.     

太赫兹量子阱光电探测器光栅耦合的模拟与优化

光栅耦合是量子阱光电探测器探测正入射电磁辐射的常用耦合方法,本文采用模式展开法研究了一维金属光栅太赫兹量子阱光电探测器中的电磁场分布,并给出了器件有源区中的平均光强.研究结果表明,若一维光栅的周期与太赫兹波在器件材料中的波长相当,并且根据器件结构选取合理的光栅占空比,可使器件中的平均光场最强,光栅的光耦合效率最高,从而提高器件的响应率. 关键词： 太赫兹 量子阱光电探测器 光栅     

THzQWP二维光栅耦合效率的理论分析研究

将二维金属光栅结构引入到探测器结构中,以提高太赫兹(THz)量子阱光电探测器的探测率。采用三维时域有限差分算法,建立了THz量子阱光电探测器的二维金属光栅仿真模型,详细分析了二维金属光栅参数对太赫兹量子阱光电探测器的电场强度的影响。仿真分析结果表明:当入射光频率为6.27 THz(相对应波长为47.847 m)、光栅周期P=10.5 m、占空比=0.55（金属块宽度w= 5.755 m）、光栅层厚度h=0.4 m时,器件中的Z方向上的电场值最大,光栅的耦合效率最高。     

Triggered single photons and entangled photons from a quantum dot microcavity

Current quantum cryptography systems are limited by the attenuated coherent pulses they use as light sources: a security loophole is opened up by the possibility of multiple-photon pulses. By replacing the source with a single-photon emitter, transmission rates of secure information can be improved. We have investigated the use of single self-assembled InAs/GaAs quantum dots as such single-photon sources, and have seen a tenfold reduction in the multi-photon probability as compared to Poissonian pulses. An extension of our experiment should also allow for the generation of triggered, polarization-entangled photon pairs. The utility of these light sources is currently limited by the low efficiency with which photons are collected. However, by fabricating an optical microcavity containing a single quantum dot, the spontaneous emission rate into a single mode can be enhanced. Using this method, we have seen 78% coupling of single-dot radiation into a single cavity resonance. The enhanced spontaneous decay should also allow for higher photon pulse rates, up to about 3 GHz. Received 8 July 2001 and Received in final form 25 August 2001     

Efficient excitation and amplification of the surface plasmons

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (Λ = 700 nm) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module.Apart from this, grating devices of smaller periodicity (Λ = 280 nm) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).     

Les boı̂tes quantiques semi-conductrices : des atomes artificiels pour l'optique quantique

The recent development of high quality semiconductor quantum dots as opened the way to quantum optics experiments in the solid-state on these ‘artificial atoms’. We discuss in particular the control of their spontaneous emission in microcavities (strong coupling, spontaneous emission enhancement, monomode emission) and the generation of quantum states of light (single photons and photon pairs). We finally present a single-mode solid-state single photon source, which is based on a single quantum dot in a pillar microcavity, and is the first of a novel class of optoelectronic devices relying on cavity quantum electrodynamics for their operation. To cite this article: J.-M. Gérard et al., C. R. Physique 3 (2002) 29–40     

基于阵列波导光栅的边缘滤波温度解调系统

为克服传统阵列波导光栅解调系统体积大、价格昂贵等问题,提出了以窄带光源为输入光源,采用边缘滤波和阵列波导光栅相结合的解调方案,实现对增敏封装后的光纤光栅温度传感器进行温度解调实验。以窄带光源作为输入,通过边缘滤波的方法使得温度传感器反射谱的中心波长偏移程度与解调光路输出光强的变化相对应,利用阵列波导光栅的波分复用实现多传感器同时测量,实现了多传感器多通道的分布式测量,实验结果表明:解调系统的波长解调范围为1 545.30 nm～1 560.50 nm,对35 ℃～42 ℃的温度范围进行检测,波长解调精度为±5.34 pm,温度测量误差可达±0.1 ℃。     

编码栅在光信息处理中的应用

本文从编码栅对光源、物函数、谱函数的调制原理出发,从三个方面分析了编码栅在光信息处理中的作用及应用实例。     

利用选择性外延法生长单芯片双波长白光InGaN/GaN多量子阱结构

为了制备单芯片无荧光粉白光InGaN/GaN多量子阱发光结构,利用选择性外延生长法在SiO2条纹掩膜板上生长出具有梯形形貌的GaN微面结构,并在该GaN微面结构上生长InGaN/GaN多量子阱结构,最终在单芯片上获得了双波长发光.结果表明:梯形GaN微面由(0001)和(11-22)面组成,两者的表面能和极性不同,并且在InGaN/GaN多量子阱生长过程中,In原子和Ga原子迁移速率不同,从而使得(0001)和(11-22)面上的多量子阱具有不同的发光波长;该性质可以使(11-22)面的微面量子阱发出蓝光(峰值波长为420nm),而(0001)面的量子阱发出黄光(峰值波长为525nm),最终形成双波长的复合白光外延结构.     

Angular resonances in the light emission from atoms near a grating

A two step light emission process becomes possible when atoms are placed near a metallic grating. The atoms can excite surface plasmons in the grating. The surface plasmons can then emit light. This light is emitted at certain angles determined by momentum conservation in the plane of the grating. Thus, the angles depend on the spacing of the grating. Our measurements on light from nitrogen atoms at distances, d, ranging from 10 to 100 nm from a silver grating are in agreement with a recent theory of Aravind, Hood and Metiu. We also report the effect of a nonsinusoidal grating profile and the emission of light at angles which can be predicted from a straightforward extension of the theory.     

Temperature dependent growth of InGaN/GaN single quantum well

InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the SQW surface is affected by the InGaN well-temperature, and the surface roughness decreased as the well-temperature reduced. Room-temperature photoluminescence (PL) and cathode luminescence (CL) shows the quantum well and quantum dot (QD)-like localized state light emission of the SQWs grown at 700 and 690 °C, respectively, whereas the samples grown at 670 and 650 °C present hybrid emission peaks. Excitation power dependent PL spectra indicates the QD-like localized state emission dominates at low excitation power and the quantum well emission starts to take over at high excitation power.     

Spatially resolved STM light emission spectra of cleaved (1 1 0) AlGaAs/GaAs heterostructures

We have measured the spectra of light emitted from individual single GaAs quantum wells of cleaved (1 1 0) AlGaAs/GaAs heterostructures using the STM (scanning tunneling microscope) tip as a local electron injection source. The cross-sectional STM images of the quantum wells were obtained, and the light emission spectra were measured by locating the STM tip over individual quantum wells of interest. Single emission peaks were observed to shift to the high-energy side with decreasing well width. The peak positions agree with the calculated transition energies for the corresponding well width. The thermalization length of the injected electron was estimated by observing the change in the emission intensity as the tip is moved at different distances from a given well.     

Carrier-diffusion-limited remote optical addressing of single quantum dots

We present a scheme for remotely addressing single quantum dots (QDs) by means of near-field optical microscopy that simply makes use of the polarization of light. A structure containing self-assembled CdTe QDs is covered with a thin metal film presenting sub-wavelength holes. When the optical tip is positioned some distance away from a hole, surface plasmons in the metal coating are generated which, by turning the polarization plane of the excitation light, transfer the excitation towards a chosen hole and induce emission from the underlying dots. In addition, our procedure gives valuable insight into the diffusion of photo-excited carriers in the QD plane that can put limits to the addressing scheme.     

普通发射式光谱仪的功能扩展与改造研究

光谱仪是进行光谱分析时所必需的重要仪器。目前在科学研究和高等教育教学中广泛应用的光谱仪大多单为某一功能而设计,且价格昂贵。本文以常见的发射式光栅光谱仪为例,进行普通光谱仪的功能扩展设计研究与测试,使普通光谱仪从单一的发射光谱仪扩展成为集荧光光谱、透射光谱和反射光谱的测量于一体的综合性光谱仪。结果表明:通过添加外部光源、搭建测试样品架的方法,在精度要求不是特别高的情况下,可以满足一般教学科研的需要。通过扩展设计,降低了分析测量的成本,对于样品的低成本分析测量及改进普通光谱仪的设计具有一定的借鉴意义。     

Optical bistability based on surface plasmon coupled between a noble metal film and a metal grating involving Kerr materials

A phenomenon about optical bistability is successfully investigated in a layered structure consisting of a silver film with Kerr medium and a silver grating sandwiched between semi-infinite linear dielectrics.This type of structure can lead to the optical bistability phenomena occurring in reflection and transmission.There exists an optimal thickness of the metal grating that can cut off the effect of the near-field enhancement and may have the lowest effect on conversion from surface plasmon to light.This structure can realize the functions of the beam splitter and the polarization splitter and will be essential for future classical and quantum information processing.     

Effect of grating on IR LED device performance

The electroluminescence in the range of 3–4.5 μm and 6–10 μm from a Sb-based type II interband quantum cascade structure is reported. We measured the light emission from the top surface of the LED device with different grating structures. We used different etch depths for the grating formation. The light–current–voltage (LIV) characteristics measured at both room and cryogenic temperatures show that the device with 45° angle grating and 1.0 μm deep etch onto the GaSb surface has the highest emission power.     

Color view of atomic highs and lows in tunneling induced light emission

Based on a detailed experimental study of light emission stimulated with a scanning tunneling microscope, we put forward a consistent picture for the atomic-scale contrasts observed to date on noble metal surfaces. Divergent contrasts near various atomic steps and conflicting interpretations of light emission from a model atomic grating, (2 x 1) reconstructed Au(110), are accounted for. The light intensity modulation results from different spatial distributions of the local density of final states in the elastic and inelastic tunneling channels.     

基于表面等离激元的长波QWIP光栅优化

为了提高长波量子阱红外探测器的灵敏度及探测率,采用表面等离激元效应来提高量子阱红外探测器中二维光栅的耦合效率。利用三维时域有限差分算法,分析表面等离激元作用下,长波量子阱红外探测器中二维金属薄膜光栅参数对入射光的调制作用。计算结果表明,对于8 m的入射光,当光栅周期P=2.8 m,孔直径D=1.4 m,光栅层厚度L=0.04 m时,X Y平面内Z方向电场值最大,光栅的耦合效率最高。     

用粘贴表面光栅法计算和测试金属材料应变

目前,利用光栅作为应变传感器测量材料应变引起了研究人员的兴趣。本文分析了衍射光栅法的基本测量原理,建立了一套相应的实验测试装置。该装置由光源、测试台、CCD、计算机数据采集与处理等部分构成。利用该装置进行了不同载荷下单向拉伸平板中心圆孔附近应力应变分布的实验,结果令人满意。由于借助CCD和计算机进行数据采集与处理,可实现金属材料应变的近实时显示与测量。     

基于类表面等离子体激元的矩形金属光栅色散特性的研究

等离子体激元(surface plasmon polaritons, SPP)因其独特的光学和物理特性, 使其具有诸如透射增强和局域共振等一系列新颖现象, 已成为当前国内外学者研究的热点. 本文对基于类表面等离子体激元(Spoof Surface Plasmons, SSP)的矩形金属光栅色散特性和模式分布进行了研究. 利用本征函数法并结合场匹配条件, 获得了矩形栅表面SSP的场表达式、色散关系和模式分布, 并通过电磁仿真进行了验证. 在此基础上分析了矩形栅各参数对SSP色散及模式分布的影响, 研究结果表明: 由本征函数法获得的SSP色散特性与仿真结果基本符合; 增大金属栅高度或减小排列周期能减小SSP的相速度; 而增大金属栅周期占空比能在一定程度上拓展SSP与电子束互作用的带宽; 改变金属盖板高度对慢波SSP色散模式基本没有影响; 减小金属栅侧面宽度能增大模式之间的间隔, 从而能有效避免模式竞争的发生. 本文对基于SSP的矩形金属光栅色散特性的研究将为进一步研究SSP与电子束的相互作用, 形成高效、宽带的新型太赫兹源奠定良好的理论基础.