脉冲偏磁场作用下硬磁泡形成与温度的关系

用一次脉冲偏场法研究了外延石榴石磁泡薄膜条状畴畴壁中VBL群体形成与温度的关系。发现了与材料参量有关的临界温度T₀₂,当T>T₀₂时,硬磁泡不再形成。还发现了当T02时,VBL群体形成有两个明显不同的阶段,它们的分界温度为T₀₁。定性解释了第一个阶段的实验曲线并用双重曝光照相法揭示了两个阶段中导致软畴段硬化的运动形式的差别。 关键词：     

面内场对三类硬磁畴的影响

采用直流偏场整形的方法,研究了面内场对石榴石磁泡薄膜中三类硬磁畴的影响.得到面内场作用下三类硬磁畴畴壁中垂直布洛赫线(VBL)是逐步解体的,而且三类硬磁畴具有相同的临界面内场范围［H¹_ip,H²_ip］,其中H¹_ip是硬磁畴中VBL开始丢失时的临界面内场,H²_ip是VBL完全丢失 关键词： 硬磁畴 整形 垂直布洛赫线     

垂直布洛赫线在畴段畴壁中的形成和消失

在不同的直流偏场下,对脉冲偏场作用后的磁泡膜中的磁畴观测结果表明:磁泡膨胀时的分枝生长往往伴随有大量垂直布洛赫线(以下称VBL)产生;它的正负与反向畴膨胀时所施加的直流偏场大小有确定关系;在幅度不太高的系列脉冲作用下畴端运动可使畴壁中形成大量VBL;足够强的脉冲偏场可使VBL消失。 关键词：     

一次脉冲偏磁场作用下硬磁泡的形成

实验研究了一次脉冲偏场作用下外延石榴石膜硬磁泡的形成规律。通过实验和计算,证明了硬泡畴壁中同号的VBL一般地说并非一个脉冲产生一对。通过双重曝光照相法揭示出软畴段的硬化与畴段运动形式的关系,发现了最适于硬泡形成的两种运动形式,并阐明了“软硬磁泡形成的分界场”H_[b]的物理意义。 关键词：     

三类硬磁畴的形成及静态特性

本文提出畴壁中含有大量VBL的石榴石磁泡材料的三类硬磁畴的分类标准,描述了它们的形成方法和静态特性,并示出典型照片。从形成条件可以合理地推论,畴壁中VBL数目的增加导致硬磁畴静态特性的质的变化。 关键词：     

枝状畴的形成及分形维数计算

对于石榴石磁泡薄膜,提出了产生单个枝状畴（MBD)的“低静态偏磁场法”.MBD的形成是与其畴壁内垂直布洛赫线（VBL）的形核相联系的.随着静态偏磁场H_b从“枝状膨胀的临界偏磁场”H[d]的降低,相应的MBD的畴形变得越来越复杂,伴随有几类硬磁泡的相继形成.对MBD进行了分形研究,把线结构维数的计算应用于MBD极其弯曲的畴壁结构,定量地描述了它们的弯曲和分枝程度,并与其畴壁内VBL的形核联系起来. 关键词：     

面内场和静态偏磁场作用下条畴和泡畴的稳定性

实验研究面内场H_in和静态偏磁场H_b作用下,(111)面磁泡膜内条畴的消失过程。保持H_b恒定,增加H_in,测量条畴消失场H_s^*和泡畴消失场H_k^*与面内场方向β的变化关系。计及立方磁晶各向异性的影响,建立H_in和H_b共同存在时的条畴稳定性理论。定性解释了实验的主要特点。导出黑、白条畴同时消失时的角度 β_n=1/3(2nπ±arc cos│3/(2^1/2)(M_sH_b)/K₁│)(n=0,±1,±2,…)与实验基本符合。 关键词：     

面内磁场对硬磁泡形成的影响

实验研究了面内磁场对一次脉冲偏磁场作用下外延石榴石薄膜中硬磁泡形成的影响,发现存在一个使硬磁泡不再形成的临界面内磁场H_in⁰,它与材料参量有关,通过实验,运用面内磁场对条状畴的作用和枝状畴的形成,定性解释了软硬磁泡形成的分界场H_[b]随面内磁场增大、快降以及缓降这三个物理过程。 关键词：     

温度对垂直布洛赫线链解体临界面内磁场区间的影响

实验研究了温度对液相外延石榴石磁泡薄膜中条状普通硬磁畴壁内的垂直布洛赫线（ＶＢＬ）链解体临界面内磁场区间的影响。发现存在一对特征温度T⁽¹⁾₀ 和 T⁽²⁾₀（前者比后者略低但均高于室温），在从室温到T⁽²⁾₀的每个温度Ｔ下，使ＶＢＬ逐渐消失的面内磁场Ｈ_ip都分布于一个与Ｔ有关的区间[H_ip⁽¹⁾(T), H_ip⁽²⁾(T)]内，称为临界面内磁场区间：H_ip^{＜H_ip(1)(T)时，ＶＢＬ链保持不变;H_ip(1)(T)< H_ip < H_ip(2)(T)时，随着Ｈ_ip的增加，越来越多的ＶＢＬ消失;H_ip > H_ip(2)(T)时，所有ＶＢＬ都消失。H_ip(1)(T),H_ip(2)(T)及H_ip(2)(T)-H_ip(1)(T)均随Ｔ的升高而下降，前二者分别于T(1)₀ 和 T(2)₀降为零。比值H_ip(2)(T)/H_ip(1)(T)随Ｔ的升高而升高，在低温段（包括室温）升高缓慢且约为21/2,在T(1)₀附近急剧升高且至T(1)₀时趋于∞。对以上结果做了理论分析。 关键词：}     

脉冲偏场作用下硬磁泡的形成

对低频脉冲偏场产生磁泡的过程中硬磁泡的形成条件进行了实验研究。发现硬磁泡的百分比p随着脉冲偏场强度的增加而迅速减小,同时发现存在一临界脉冲偏场强度H_po,当H_p≥H_po时,所产生的磁泡都是软磁泡。 关键词：     

Behavior of vertical-Bloch-line chains of hard domains in garnet bubble films

As a main micromagnetic structure of domain walls in garnet bubble films, vertical-Bloch-line (VBL) chains play an important role in the characteristics of hard domains. In the 1970s, their study progressed rapidly during the period in which bubble devices were developed. When ultra-high-density Bloch line memory (BLM) was proposed in 1983, VBL chain behavior again attracted attention. This review will introduce the early achivements focusing primarily on the results of the last decade. A convenient method of forming VBL chains, a new classification scheme of hard domains and the unsolved “number effect” of VBLs will be discussed. Various behaviors of VBL chains under static compression, and in-plane magnetic fields will also be presented. Finally, the temperature stability of VBL chains will be reported.     

INFLUENCE OF IN-PLANE FIELD ON THE STABILITY OF VERTICAL BLOCH LINE CHAINS IN HARD DOMAINS OF GARNET BUBBLE FILMS

The stability of vertical Bloch line (VBL) chains was statistically studied for all three types of bard domains in garnet bubble films subjected to an in-plane field H_ip. With a set of integrate data taken from seven bubble samples and with two typical figures of a sample, four main features of the behavior of VBL chains subjected to H_ip were summarized.     

ANNIHILATION OF VERTICAL-BLOCH-LINE CHAINS IN THE WALLS OF THE SECOND KIND OF DUMBBELL DOMAINS SUBJECTED TO JOINT STATIC BIAS FIELD AND IN-PLANE FIELD

Experiments were statistically carried out on the behavior of vertical-Bloch-line(VBL) chains in the walls of the second kind of dumbbell domains (IIDs) is garnet bubble films subjected to joint action of static bias field H_b and in-plane field H_ip. The curves of the four critical in-plane fields, (H_ip)_IID-ID (H_ip)_IID-OHB (H_ip)_IID-SB and H'_ip vs H_b were measured and explained. In particular, in terms of two series of IID photos, a new experimental manifestation of the unknown "number effect" of VBL chains was found.     

Influence of Temperature on Equilibrium Separation Between Vertical Bloch Lines in OHBs in Garnet Bubble Films

The diameters of the ordinary hard bubbles （OHBs） and soft bubbles in epitaxial garnet films are measured under the microscope at various temperatures. It is found that the bubble diameters of OHBs increase with temperature, and it is concluded that the equilibrium separation between two neighbouring vertical Bloch lines （VBLs） Seq is widened with increasing temperature. At the same time, the results can be understood simply as that there are more VBLs in the domain walls of the first dumbbell domains （IDs） than those in walls of OHBs at the same temperature.     

Magneto-optical studies of epitaxial EuS films on silicon

An improved simple method for magneto-optical display of ferromagnetic domains by means of laser light is reported. As an example, characteristic domain patterns are presented and discussed, which develop during the magnetization reversal of ferromagnetic EuS-films grown epitaxially on silicon substrates. The critical field strength for domain nucleation, H_K, the coercive field, H_c, the saturation field, H_s, and the direction and width of the domains have been studied as function of angle varied between the magnetical easy and hard axes of (110)- and (111)-EuS films, and as a function of temperature between 6 and 14.5 K. By extrapolating the linear decrease of H²_K,cs vs. T to zero the Curie temperature of the (110)- and (111)-EuS films has been determined to (15.3±0.2) K and (14.5±0.2) K, respectively.