Carbon Nitride Thin Films Deposited by Plasma Assisted Nd∶YAG Laser Ablation of Graphite in N2+H2 Atmosphere

Carbon nitride thin films are deposited on silicon wafers by 532 nm Nd∶YAG laser ablation of graphite in the N2+H2 atmosphere assisted by a dc glow discharge plasma at a higher gas pressure of about 4.0 kPa. The properties of the thin films are investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and X-ray diffraction (XRD). The results show that the deposited films are composed of α-C3N4, β-C3N4 phase and have the N/C atomic ratio of 2.01. The optical emission spectroscopy (OES) studies indicate that the introduction of a dc glow discharge and the adoption of a higher gas pressure during the film deposition are favorable to the net generation of the atomic N, CN radicals and N+2 in B2Σ+u excited state in the plasma, which are considered to play a major role in the synthesis of carbon nitride.     

Carbon Nitride Thin Films Deposited by Plasma Assisted Nd∶YAG Laser Ablation of Graphite in N_2 H_2 Atmosphere

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不同Ar/O2气压比例条件下立方MgZnO薄膜生长特性及紫外光吸收特性

利用脉冲激光沉积技术在非晶石英衬底上制备了立方结构MgZnO薄膜,研究了在不同Ar/O₂气压比例条件下,立方结构MgZnO薄膜的生长取向、光学带隙和Mg/Zn含量比例的变化规律。当固定氧气分压为2 Pa、通过注入惰性的Ar气使生长气压从2 Pa升高到7 Pa时,MgZnO薄膜的生长取向由（200）向（111）转变。当生长气压从2 Pa升高到6 Pa时,MgZnO薄膜光学带隙变窄。而当生长气压从6 Pa升高到7 Pa时,MgZnO薄膜光学带隙反而变宽。通过XPS数据分析,不同生长气压下MgZnO薄膜光学带隙的变化规律与薄膜Mg/Zn含量比例的变化规律不一致,MgZnO薄膜中Mg和Zn与O的结合情况的变化对薄膜的光学带隙也有影响。     

GaSb基PECVD法制备SiO2薄膜的应力研究

为了实现在GaSb衬底上获得低应力的SiO₂薄膜,研究了等离子体增强化学气相沉积法（PECVD）在晶格失配较大的GaSb衬底上沉积SiO₂薄膜的应力情况。通过改变薄膜沉积时的工艺条件,如反应温度、射频功率、反应压强、气体流量比,并基于曲率法模型,对镀膜前后的曲率半径进行了实验测量,利用Stoney公式计算相关应力值并绘制应力变化曲线。详细讨论了PECVD工艺条件的改变对SiO₂薄膜应力所产生的影响。同时通过在Si衬底上沉积SiO₂薄膜,对比分析了导致薄膜应力产生的因素及变化过程。实验结果表明,在沉积温度为300℃、射频功率为20 W、腔体压强为90 Pa、气体流量比SiH₄/N₂O为125/70 cm³·min^-1的工艺参数下,PECVD法在GaSb衬底上沉积的SiO₂薄膜应力相对较小。     

Nd：YAG激光器切割金刚石膜的特性研究

采用Ｎｄ：ＹＡＧ激光器对金刚石膜进行切割，研究了激光器在不同输出功率下切割金刚石膜的速率和切割深度与时间的关系，以及Ｎｄ：ＹＡＧ激光器切割的金刚石膜在成份和形状上的变化特点，给出了比较理想的切割工艺条件。     

快速退火对PLD法制备SnS薄膜结构和光学性质的影响

利用脉冲激光沉积(PLD)法在玻璃基片上室温生长SnS薄膜,并在Ar气保护下分别在200,300,400,500,600℃对薄膜进行快速退火处理。利用X射线衍射(XRD)、拉曼光谱仪(Raman)、原子力显微镜(AFM)、场发射扫描电子显微镜( FE-SEM)、紫外-可见-近红外分光光度计( UV-Vis-NIR)、Keithley 4200-SCS半导体参数分析仪研究了快速退火温度对SnS薄膜的晶体结构、表面形貌以及有关光学性质和电学性能的影响。所制备的SnS薄膜样品沿(111)晶面择优取向生长,退火温度为400℃时的薄膜结晶质量最好。薄膜均具有SnS特征拉曼峰。随着退火温度的升高,薄膜厚度逐渐减小,而平均颗粒尺寸逐渐增大。不同退火温度下的SnS薄膜在可见光范围内的吸收系数均为105 cm-1量级,400℃时退火薄膜的直接带隙为1.92 eV。随着退火温度从300℃升高到500℃,电阻率由1.85×104Ω·cm下降到14.97Ω·cm。     

Effects of N2 and glow discharge on growth behaviours of carbon nanotubes prepared by the hot filament chemical vapour deposition method

Carbon nanotubes (CNTs) are prepared by the hot filament chemical vapour deposition method using CH4 and H2 as reaction gases, and the growth behaviours are investigated by scanning electron microscopy and transmission electron microscopy. The results indicate that the CNTs prepared in the absence of N2 or glow discharge are bent; however, they are in an aligned state after introducing N2 into the chamber or forming glow discharge under a negative biased voltage. The results also indicate that the CNTs are of a bamboo-like structure when N2 is intruded as a reaction gas and the alignment degree of the CNTs grown under glow discharge is higher than that grown in N2. This illustrates that the nitric environment and glow discharge play important roles in the growth of CNTs. Combining with the theory related to alloy thermodynamics and collisions, we have analysed the growth mechanism of the CNTs in nitric environment and glow discharge.     

低温等离子体分解N2/O2/NO气氛中NO试验研究

利用自行设计的介质阻挡放电型低温等离子体反应器,研究了NO初始浓度、O₂初始浓度、放电功率、电源频率等因素对NTP转化N₂/O₂/NO气氛中NO的影响规律。研究发现,NO去除率随功率增大而升高,到达一最大值后随功率增大而降低;NO去除率随O₂初始浓度增加而降低,随NO初始浓度增大而减小。相同放电功率下,同一组分中NO去除率随电源频率的增加而降低,因此相同放电功率下降低电源频率可提高NO去除率。O₂初始浓度不高于5%时,NO_x大部分为NO,NO₂和O₃浓度均随放电功率增大而降低,NO₂、O₃生成量随O₂初始浓度升高而增多。     

脉冲激光沉积方法制备ZnO薄膜生长参量对发光特性的影响

用脉冲激光沉积（PLD）方法在Si（111）衬底上制备了ZnO薄膜。以325nmHe-Cd激光器为光源对薄膜进行了荧光光谱分析,用X射线衍射仪（XRD）和原子力显微镜（AFM）分别对薄膜的结构和形貌进行了分析。脉冲激光沉积方法的主要生长参量为氧压、激光重复频率、生长温度和激光能量。通过控制这些参量变量,研究了这些参量对ZnO薄膜发光特性的影响,得到了用于紫外发光的ZnO薄膜生长的优化条件：发现在温度为650℃左右、氧压50Pa左右、频率5Hz左右的范围内能得到半峰全宽较窄,强度较大的紫外发光峰。分析认为紫外峰主要是由激子辐射复合发光形成的,绿光带主要和Ozn的存在密切相关,氧空位是蓝光发射的重要原因。     

离子(N2+, N+)在氮辉光放电等离子体光辐射中的作用

采用氮辉光放电等离子体电子与重粒子综合的Monte Carlo模型,研究了离子(N2+,N+)与氮分子碰撞产生光辐射的强度分布及其 在氮辉光放电等离子体光辐射中的作用。两种离子产生的各种碰撞激发和辐射都分布在鞘层区内,光辐射强度向阴极方向逐渐 增加,且总强度随放电电压增加而增强。相对于电子产生的碰撞激发辐射,离子(N2+,N+)引起的辐射在阴极附近引起次最大 光强,且原子离子N+的作用较分子离子N2+大。当电压较低时,离子(N2+,N+)引起的辐射可以忽略。模拟结果很好解释了两 种典型的N2辉光放电光学发射谱的实验结果,为等离子体诊断研究中的光谱数据分析提供参考。     

Influence of N2:(N2 + Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering

Preferred crystal orientation and low electrical resistivity are required for ZrN_x films applied in electronic devices. In this paper, effects of N₂:(N₂+Ar) flow ratio (F(N₂)) and substrate temperature on the properties of the films deposited on glass substrate by reactive dc sputtering are investigated. In a wide range of F(N₂) (4–24%), the films show fcc NaCl structure. While for F(N₂) in the ranges of 5–12, 12–24 and >24%, the films show (1 1 1)/(2 0 0), (1 1 1) only and amorphous structures, respectively. The electrical resistivity increases with F(N₂) from 5 to 24%, and can be controlled to some extent by changing the substrate temperature.     

脉冲激光制备类金刚石薄膜及原位激光等离子体发射光谱

用ＹＡＧ脉冲激光轰击真空室内的石墨靶,可以形成包含碳素的激光等离子体,并在硅或石英衬氏上淀积形成某种类型的碳膜。用光学多道分析仪原位测量了激光等离子体的发射光谱,给出反应空间可能存在的反应基团有碳原子、碳离子、碳分子等,用拉曼光谱研究了薄膜的结构,证明所形成的薄膜为类金刚石膜,并得出碳原子和碳离子与薄膜的类金刚石结构有关。制备过程中,氢的参与有利于薄膜中金刚石成分的形成。空间分辨的原位激光等离子体发射光谱表明,在反应空间存在薄膜形成的最佳位置。     

Deposition and characterization of YBCO/CeO2/YSZ/CeO2 multilayers on biaxially textured Ni substrates

CeO2/YSZ/CeO2 buffer layers were deposited on biaxially textured Ni substrates by pulsed laser deposition. The influence of the processing parameters on the texture development of the seed layer CeO2 was investigated. Epitaxial films of YBCO were then grown in situ on the CeO2/YSZ （yttria-stabilized ZrO2）/CeO2-buffered Ni substrates. The resulting YBCO conductors exhibited self-fleld critical current density Jc of more than 1 MA/cm^2 at 77K and superconducting transition temperature Tc of about 91K.     

金属纳米团簇复合薄膜Au/BaTiO3与Fe/BaTiO3的PLD制备及其光吸收特征

用脉冲激光沉积技术制备了掺杂纳米金属颗粒Au或Fe的BaTiO₃复合薄膜.用透射电子显微镜和x射线光电子能谱表征了金属颗粒的形态和化学态.330—800nm范围的吸收谱研究表明，掺Au颗粒的BaTiO₃薄膜在580nm附近有一个明显的共振吸收峰，而掺Fe颗粒的BaTiO₃薄膜没有这样的吸收峰.用Mie散射理论对结果进行了分析. 关键词： 复合薄膜 金属颗粒 脉冲激光沉积 吸收谱     

Laser-induced damage of Ta2O5/SiO2 narrow-band interference filters under different 1064 nm Nd:YAG laser modes

The laser-induced damage (LID) behavior of narrow-band interference filters was investigated with a Nd:YAG laser at 1064 nm under single-pulse mode and free-running mode. The absorption measurement of such coatings was performed with surface thermal lensing (STL) technique. The damage morphologies under the two different laser modes were also studied in detail. It was found that all the filters exhibited a pass-band-center-dependent absorption and laser-induced damage threshold (LIDT) behavior, but the damage morphologies were diverse. The explanation was given with the analysis of the electric field distribution and the operational behavior of the irradiation laser.     

钽掺杂二氧化钛薄膜的光电性能研究

采用脉冲激光沉积法 (PLD), 以石英玻璃为衬底制备了钽掺杂TiO₂薄膜并研究了薄膜样品的光电性质. 沉积氧气分气压从0.3 Pa变化到0.7 Pa时薄膜样品的帯隙变化范围是3.26 eV到3.49 eV. 通过测量电阻率随温度的变化关系确定了薄膜内部的主要导电机理. 在150 K到210 K温度范围内, 热激发导电机理是主要的导电机理; 而在10 K到150 K范围内; 电导率随温度的变化复合Mott的多级变程跳跃模型 (VRH); 在210 K到300 K范围内, 电阻率和exp(b/T)^1/2呈正比关系. 关键词： 2')" href="#">Ta掺杂TiO₂ 脉冲激光沉积法 薄膜 导电机理     

相分离La0.33Pr0.34Ca0.33MnO3薄膜体系中的交换偏置效应

在相分离La_0.33Pr_0.34Ca_0.33MnO₃薄膜体系中发现了大的交换偏置效应．在4 K时,交换偏置场的大小达到了约1 kOe．交换偏置效应可能源自薄膜内禀的电子相分离特性或薄膜的表面效应．交换偏置效应表现出强的温度、冷却磁场以及厚度依赖的关系．     

Stability of a Laser-diode-pumped Cr4+:YAG Passively Q-switched Nd3+:YAG Laser

In this paper, the stability of a laser-diode-pumped Cr4+:YAG passively Nd3+:YAG Q-switched laser and the influence of the transversal mode structure on the stability are investigated. With the laser operating in TEM00 mode, the pulse energy fluctuation and the repetition rate fluctuation as functions of the repetition rate are measured, and semi-quantitatively and qualitatively analyzed, respectively.     

Some considerations on the design of a high-power N2 laser

The design of a high-power transverse discharge N₂ laser is reported. TThe overall maximum efficiency of the laser is 0.51%— thought to be the second highest value reported so far. Details of the pressurized and free-running type spark gap switch and certain parametric studies are also given.