Thermoluminescence kinetic study of binary lead-silicate glasses

This paper describes a detailed experimental study of the thermoluminescence (TL) properties of four binary lead-silicate glasses, with PbO concentrations ranging from 32% to 62% in mole percent. The TL glow peaks between room temperature and 300 °C were analyzed using a systematic thermal cleaning technique. The T_max-T_stop and E-T_stop methods of analysis were used to identify the number of peaks under the glow curves, and to obtain the activation energy E for each TL trap. A computerized glow curve fitting analysis is used to fit the experimental data to four first-order peaks with maxima at temperatures of 54, 80, 110 and 210 °C, as measured with a heating rate of 2 °C/s. The kinetic parameters of the glow-peak at 210 °C were confirmed by using phosphorescence decay methods of analysis. The TL traps associated with the low-temperature TL peak at 54 °C are found to depend strongly on the PbO concentration of the samples, while the higher-temperature TL peaks show a behavior independent of the PbO concentration. The activation energy E and frequency factor s of the low-temperature TL trap associated with the peak at 54 °C are consistent with a trap involving a delocalized transition through the conduction band. However, the activation energies and frequency factors for the higher-temperature TL traps are consistent with traps involving localized transitions via an excited state below the conduction band. The data suggest that these higher-temperature TL traps are associated with the common silicate matrix in these binary silicate glasses.     

The application of thermoluminescence theory to natural semiconducting diamond

The main thermoluminescence glow peak at ~ 250°K in natural semiconducting diamond has been analysed by methods proposed by several authors, using the model of the thermoluminescence process developed in the preceding paper as a guide. Kinetic equations appropriate to two conditions of recombination are developed and discussed in the light of the recombination processes in natural semiconducting diamond. A summary of several methods of analysis is given. The various methods are then applied in turn to the 250°K glow peak. The method of initial rise is shown to be appropriate to the model of trapping and recombination given in the preceding paper, and gives a value 0.35 ± 0.02 eV for the trap depth. Halperin and Braner's method for the trap depth is unsuitable owing to the high value of their correction term 2kT_m/E, although their analysis suggests that the order of the kinetics changes from nearly 1st to nearly 2nd as the glow progresses. The methods of Grossweiner, Keating and Luschik apply only when 1st order processes are selected. An estimation of the trapping cross-section gives S_T ~ 10^-20 cm².     

The analysis of thermoluminescent glow peaks of copper doped ZnS thin films after β-irradiation

In the given study, the thermoluminescence (TL) properties of copper (Cu)-doped ZnS thin films were investigated after β-irradiation at room temperature (RT). It was observed that the glow curve of this material has two broad TL peaks, in which one of them was centered at about 110 °C and the other at about 170 °C for a heating rate of 1 °C s⁻¹ in the temperature range from RT to 350 °C. The additive dose (AD), T_m(E_a)−T_stop, repeated initial rise (RIR), variable heating rate (VHR) and computerized glow curve deconvolution (CGCD) methods were used to analyze its glow curves. These methods indicated that the glow curve of this material is the superposition of a number of first- and general-order glow peaks, or at least due to the distribution of traps. The dose responses and fading process of both peaks were also examined, and it was observed that the dose responses of both peaks have similar pattern. First they follow a good linearity with different slopes and then saturate at approximately same dose level (2 kGy). The low-temperature broad peak nearly disappeared after 1 week storage in the dark at RT. On the other hand, the intensity of the high-temperature broad peak was approximately reduced to 50% of its original value. The TL emission spectrum of this material has two main emission bands, namely, the blue and green bands. The first glow peak emits predominantly in blue region, whereas the second glow peak in the green region.     

Electron paramagnetic resonance and the thermoluminescence emission mechanism of the 280 °C peak in natural andalusite crystal

Samples of natural andalusite (Al₂SiO₅) crystal have been investigated in terms of thermoluminescence (TL) and electron paramagnetic resonance (EPR) measurements. The TL glow curves of samples previously annealed at 600 °C for 30 min and subsequently gamma-irradiated gave rise to four glow peaks at 150, 210, 280 and 350 °C. The EPR spectra of natural samples heat-treated at 600 °C for 30 min show signals at g=5.94 and 2.014 that do not change after gamma irradiation and thermal treatments. However, it was observed that the appearance of a paramagnetic center at g=1.882 for the samples annealed at 600 °C for 30 min followed gamma irradiation. This line was attributed to Ti³⁺ centers. The EPR signals observed at g=5.94 and 2.014 are due to Fe³⁺. Correlations between EPR and TL results of these crystals show that the EPR line at g=1.882 and the TL peak at 280 °C can be attributed to the same defect center.     

Thermo and photoluminescence properties of Eu activated hexagonal, monoclinic and cubic gadolinium oxide nanorods

Different phases of Eu³⁺ activated gadolinium oxide (Gd (OH)₃, GdOOH and Gd₂O₃) nanorods have been prepared by the hydrothermal method with and without cityl trimethyl ammonium bromide (CTAB) surfactant. Cubic Gd₂O₃:Eu (8 mol%) red phosphor has been prepared by the dehydration of corresponding hydroxide Gd(OH)₃:Eu after calcinations at 350 and 600 °C for 3 h, respectively. When Eu³⁺ ions were introduced into Gd(OH)₃, lattice sites which replace the original Gd³⁺ ions, a strong red emission centered at 613 nm has been observed upon UV illumination, due to the intrinsic Eu³⁺ transition between ⁵D₀ and ⁷F configurations. Thermoluminescence glow curves of Gd (OH)₃: Eu and Gd₂O₃:Eu phosphors have been recorded by irradiating with gamma source (⁶⁰CO) in the dose range 10-60 Gy at a heating rate of 6.7 °C sec⁻¹. Well resolved glow peaks in the range 42-45, 67-76, 95-103 and 102-125 °C were observed. When γ-irradiation dose increased to 40 Gy, the glow peaks were reduced and with increase in γ-dose (50 and 60 Gy) results the shift in first two glow peak temperatures at about 20 °C and a new shouldered peak at 86 °C was observed. It is observed that there is a shift in glow peak temperatures and variation in intensity, which is mainly attributed to different phases of gadolinium oxide. The trapping parameters namely activation energy (E), order of kinetics (b) and frequency factor were calculated using peak shape and the results are discussed.     

Determination of kinetic parameters of thermally stimulated luminescence of Cu-doped BaSO4

Studies of thermally stimulated luminescence (TSL) of doped BaSO₄ with Cu activator have been carried out. The polycrystalline sample of Cu-doped BaSO₄ is prepared by recrystallisation method. The characterization and elemental analysis of BaSO₄:Cu compound are carried out by X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDX). The compound has orthorhombic structure at room temperature. The TSL studies of Cu-doped BaSO₄ sample show two glow peaks at 160 and 227 °C. Comparison of TL intensity of the most intensive glow peak of Cu- and Mn-doped BaSO₄ compounds with that of undoped BaSO₄ shows that addition of Cu and Mn impurity in BaSO₄ compound enhances the TL intensity by about 9 and 3 times, respectively. Among the studied samples, namely undoped, Cu- and Mn-doped BaSO₄, Cu-doped BaSO₄ is found to be the most sensitive. The trap parameters namely order of kinetics (b), activation energy (E), frequency factor (s) and Balarin parameter (γ) associated with the most intensive glow peak, i.e. the 227 °C glow peak of BaSO₄:Cu phosphor were determined by using isothermal decay method and glow curve shape (Chen's) method and these parameters are in good agreement.     

Studies on shallow traps in Li2B4O7:Eu,Mn

Li₂B₄O₇ (LTB) single crystals doped with 0.5 mol% Mn and 0.005 mol% Eu have been grown by the Czochralski method. The presence of Eu³⁺ has been confirmed by photoluminescence spectra of non-irradiated crystals, whereas the presence of Mn²⁺ by absorption spectra of gamma-irradiated ones, as well as by EPR measurements. Unlike in most thermoluminescence studies on pure and doped LTB, performed usually above 300 K, glow curves have been recorded between 10 and 300 K in order to focus the attention on shallow traps. A broad, intense glow peak is observed around 80 K, with three weaker peaks at 205, 255, and 280 K. Based on supplementary T_max − T_stop experiments, the trap parameters have been derived assuming that the glow curve is in fact formed by a superposition of a double Gaussian band related to a quasi-continuous distribution of trapping levels, and several glow peaks produced by discrete traps. The nature of the traps is also discussed.     

Thermally stimulated luminescence and electron paramagnetic resonance studies on uranium doped K2Ca2(SO4)3

Thermally stimulated luminescence (TSL) studies of gamma-irradiated uraniumdoped K₂Ca₂(SO₄)₃ revealed two glow peaks around 400 K and 435 K. Electron paramagnetic resonance (EPR) studies carried out on these samples have shown the formation of the radical ions SO ₄ ⁻ , SO ₃ ⁻ , SO ₂ ⁻ and O ₃ ⁻ . From the study of the thermal stabilities of these radical ions, it was found that the thermal destruction of SO ₂ ⁻ and SO ₄ ⁻ radical ions are associated with the glow peaks observed around 400 K and 435 K respectively. Uranate ion was identified as the luminescent centre for the observed TSL glow. The trap depth values for the glow peaks have been determined from TSL data.     

Thermoluminescence of NaCl:Tl at 340°K

Thermoluminescence and optical absorption have been studied in X-irradiated NaCl:Tl crystals. It is suggested that the filled electron traps and the filled hole traps responsible for 340°K glow peak are the F-centres and the TI⁺⁺ ions respectively. The emission at 340°K results from the thermal release of F-electrons and their recombination with the holes at TI⁺⁺ centres.     

Development of NaCl:K(6T) phosphor for thermoluminescence dosimetry

The present paper discusses the development of the NaCl:K (10 ^–1 molar fraction of potassium) phosphor as dosimeter material for beta-radiation thermoluminescent dosimetry (TLD). The TLD grade NaCl:K(6T) material was prepared by annealing the NaCl:K powder obtained from aqueous solution by the method of recrystalization and annealed at 600°C for two hours in open air. It is observed that thermal glow curves of NaCl:K(6T) specimen exhibit well defined glow peak around 170°C alongwith a weaker peak at lower temperature. The high-temperature peak is found to grow supralinearily with increase in beta dose in the range 10–2×10³ rad. Since the nature of glow curves under the influence of different doses remains more or less identical, it is believed that the phosphor does not undergo radiation damage and give high intrinsic TL around peak III. Examination of the system for fundamental dosimetry requirement shows that the NaCl:K(6T) material can be used as a suitable TLD material in beta radiation.     

Excitation of thermoluminescence in Eu doped Ba0.12Sr0.88SO4 nanophosphor by low energy argon ions

In the present paper thermoluminescence properties of argon ions irradiated barium strontium mixed sulphate phosphor are reported. The Ba_0.12Sr_0.88SO₄ phosphor was prepared by chemical co-precipitation method. The X-ray diffraction study of prepared sample suggests orthorhombic structure with average grain size of 37 nm. The samples were irradiated with 1.2 MeV Argon ions at fluences varying between 10¹¹-10¹⁵ ions/cm². The argon ions penetrate to the depth of 1.89 μm and lose their energy mainly via electronic stopping. Due to ion irradiation, a large number of defects in the sample are formed. Thermoluminescence (TL) glow curves were recorded for each of the ion fluence. These curves exhibit one broad peak with maximum intensity at 498 K composed of three overlapping peaks. This indicates that different sets of traps are being activated within the particular temperature range each with its own value of activation energy (E) and frequency factor (s). The peaks were observed due to formation of trap levels by ion irradiation and subsequently activation of traps on thermal stimulation. The TL response of the nanophosphor is linear in the dose range 59 kGy-590 MGy. Kinetic parameters associated with the prominent peaks were calculated using glow curve deconvolution (GCD) and verified by different glow curve shape and sample heating rate methods.     

High-Jc GdBa2Cu3O7−δ films fabricated by the metal–organic deposition process

We report a successful fabrication of high-J_c GdBa₂Cu₃O_7−δ (GdBCO) films by the metal–organic deposition process on the LaAlO₃ (LAO) (0 0 1) substrates. The coating solution was prepared by mixing Gd, Cu fluorine-free sources with Ba trifluoroacetate. Samples were dip-coated, pyrolized within 3 h at the temperature up to 400 °C in a humid oxygen atmosphere, and finally fired at various high temperatures in 100 ppm Ar/O₂ atmosphere. The GdBCO films fired at 775 and 800 °C exhibited J_c values of ∼2.1 MA/cm² at 77 K in a self-field, which are attributable to both high T_c,zero values of ∼89 K and high in-plane textures of 1.3–1.4°. Above 800 °C, however, the superconducting properties of GdBCO films are degraded due to the thermal decomposition of GdBCO film in 100 ppm Ar/O₂ atmosphere.     

Luminescence studies of rare earth doped yttrium gadolinium mixed oxide phosphor

This paper reports the photoluminescence and thermoluminescence properties of gamma ray induced rare earth doped yttrium gadolinium mixed oxide phosphor. The europium (Eu³⁺) was used as rare earth dopant. The phosphor was prepared by chemical co-precipitation method according to the formula (Y_2−x−yGd_x) O₃: Eu_y³⁺ (x=0.5; y=0.05). The photoluminescence emission spectrum of the prepared phosphor shows intense peaks in the red region at 615 nm for ⁵D₀→⁷F₂ transitions and the photoluminescence excitation spectra show a broad band located around 220–270 nm for the emission wavelength fixed at 615 nm. The thermoluminescence studies were carried out after irradiating the phosphor by gamma rays in the dose range from 100 Gy to 1 KGy. In the thermoluminescence glow curves, one single peak was observed at about 300 °C of which the intensity increases linearly in the studied dose range of gamma rays. The glow peak was deconvoluted by GlowFit program and the kinetic parameters associated with the deconvoluted peaks were calculated. The kinetic parameters were also calculated by various glow curve shape and heating rate methods.     

Magnetic susceptibility and electrical resistivity of CexY1−xAl2

The magnetic susceptibility and the electrical resistivity have been measured for Ce_xY_1−xAl₂ (x = 0, 0.05, 0.15, 0.25) between 4.2°K and 300°K. _x3kT vanishes at low temperature. We find a minimum in resistivity at 60°K (x = 5) and 68°K (x = 0.25).     

Argon ions induced thermoluminescence properties of Ba0.12Sr0.88SO4 phosphor

Thermoluminescence properties of barium strontium mixed sulfate have been studied by irradiation with Argon ions. The sample was recrystallized by chemical co-precipitation techniques using H₂SO₄. The X-ray diffraction study of prepared sample suggests the orthorhombic structure with average grain size of 60 nm. The samples were irradiated with 1.2 MeV Argon ions at fluences varying between 10¹¹ and 10¹⁵ ions/cm². The argon ions penetrate to the depth of 1.89 μm and lose their energy mainly via electronic stopping. Due to ion irradiation, a large number of defects in the sample are formed. Thermally stimulated luminescence (TSL) glow curves of ion irradiated Ba_0.12Sr_0.88SO₄ phosphor exhibit broad peak with maximum intensity at 495 K composed of four overlapping peaks. This indicates that different sets of traps are being activated within the particular temperature range each with its own value of activation energy (E) and frequency factor (s). Thermoluminescence (TL) glow curves were recorded for each of the ion fluences. A linear increase in intensity of TL glow peaks was found with the increase in ion dose from 59 kGy to 5.9 MGy. The kinetic parameters associated with the prominent glow peaks were calculated using glow curve deconvolution (GCD), different glow curve shape and sample heating rate methods.     

Temperature dependence of the elastic constants of single-crystal rutile between 4° and 583°K

Measurements of all the six principal elastic constants of single-crystal rutile were made in the temperature range of 298–583°K. The temperature derivatives (in kb/deg) at 298°K are: dC₁₁/dT = − 0·510, dC₃₃/dT = − 0·900, dC₄₄/dT = − 0·220, dC₆₆dT = − 0·458, dC₁₂/dT = − 0·580, and dC₁₃/dT = − 0·330. Measurements of the four modes, C₁₁, C′ = (C₁₁ — C₁₂)/2, C₆₆, and C_110L = (C₁₁ + C₁₂ + 2C₆₆)/2, were extended to 4°K. Two features related to the temperature and volume dependences of the lattice vibrational frequencies are revealed: first, all the measured dC_lj/dT except dC′/dT become less negative with increasing temperature above 100°K. Second, dC′/dT is positive at all temperatures but decreases with increasing temperature at temperatures > 300°K. Indirectly shown is that (∂C′/∂P)_T having a value of − 1·32 at 298°K, decreases with decreasing temperatures. The significance of this latter fact is discussed in light of the computation of Grüneisen mode γ's from the acoustic (∂C_ij/∂P)_T values, and the results are compared with the γ (α_v) values obtained by Kirby from thermal expansion data. It is concluded that the large increase in γ(α_v) at low temperatures cannot be ascribed to a large temperature dependence of (∂C′/∂P)_T. Therefore, Kirby's explanation, that the large increase in γ(α_v) is caused by the large volume dependence of the acoustical mode frequencies, is not substantiated.     

The field fluctuational model of thermally stimulated processes in ferroelectric LiNbO3

The thermally stimulated processes in the x-irradiated LiNbO₃ crystals were studied by the fractional glow technique. The trap ionization with unusually high values of the mean activation energy and the effective frequency factor as well as decreasing the activation energy of the traps when the temperature increased from 150–180 K were observed. We suggest that all these effects are due to the ion-fluctuation process (the electric field generated by thermal reorientation of dipoles.     

Dosimetric properties of rare earth doped LiCaBO3 thermoluminescence phosphors

Lithium Calcium borate (LiCaBO₃) polycrystalline thermoluminescence (TL) phosphor doped with rare earth (RE³⁺) elements has been synthesized by high temperature solid state diffusion reaction. The reaction has produced a very stable crystalline LiCaBO₃:RE³⁺ phosphors. Among these RE³⁺ doped phosphors thulium doped material showed maximum TL sensitivity with favorable glow curve shape. TL glow curve of gamma irradiated LiCaBO₃:Tm³⁺ samples had shown two major well-separated glow peaks at 230 and 430 °C. The glow peak at 430 °C is almost thrice the intensity of the glow peak at 230 °C. The TL sensitivity of the phosphor to gamma radiation was about eight times that of TLD-100 (LiF). Photoluminescence and TL emission spectra showed the characteristic Tm³⁺ peaks. TL response to gamma radiation dose was linear up to 10³ Gy. Post-irradiation TL fading on storage in room temperature and elevated temperatures was studied in LiCaBO₃:Tm³⁺ phosphor.     

Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices

The effects of thermal annealing on the large monolayer (11 ML) coverage of In_0.45Ga_0.55As/GaAs quantum dots (QDs) is being investigated in this study. Low temperature (8 K) photoluminescence (PL) spectra exhibits suppressed blueshift of the strongest PL emission peak even at high temperature annealing (800 °C). TEM and DCXRD characterizations showed the existence of the dots with good crystalline quality at annealing temperatures of 800-850 °C. The physics of annealing induced compositional modification of the InGaAs QDs with various monolayer coverage has been studied by a theoretical model and simulation. All our studies establish the thermal stability of large ML coverage InGaAs QDs, which is desirable for optoelectronic devices required for selective wavelength tuning in specific applications.     

Internal irradiation effects in239Pu doped K2Ca2(SO4)3): EPR,TSL and PAS investigations

The electron/hole trapped centres created during internal irradiation in²³⁹Pu doped K₂Ca₂(SO₄)₃ were investigated using electron paramagnetic resonance (EPR), thermally stimulated luminescence (TSL) and photoacoustic spectroscopic studies (PAS). These techniques were used to identify the defects and characterize the thermally induced relaxation processes. TSL studies of self (α)/γ-irradiated²³⁹Pu doped K₂Ca₂(SO₄)₃ revealed two glow peaks around 400 and 433K. Plutonium introduced as Pu⁴⁺ was partly reduced to Pu³⁺ due to self irradiation. This was ascertained from PAS studies. EPR studies carried out on these samples showed the formation of radical ions SO ₄ ⁻ , SO ₃ ⁻ , O ₃ ⁻ , etc. The thermal destruction of SO ₄ ⁻ ion was found to be associated with the prominent glow peak around 433K. Pu³⁺ was found to act as luminescent centre for the observed TSL glow. The trap depth for the glow peak at 433K has been determined from TSL and EPR data.