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1.
We study the capacitance spectra of artificial molecules consisting of two and three coupled quantum dots from an extended Hubbard Hamiltonian model that takes into account quantum confinement, intra- and inter-dot Coulomb interaction and tunneling coupling between all single particle states in nearest neighbor dots. We find that, for weak coupling, the interdot Coulomb interaction dominates the formation of a collective molecular state. We also calculate the effects of correlations on the tunneling probability through the evaluation of the spectral weights, and corroborate the importance of selection rules for understanding experimental conductance spectra. 相似文献
2.
Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors
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The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate single electron tunneling through a phosphorus dopant induced quantum dots array in heavily n-doped junctionless nanowire transistors. Several subpeaks splittings in current oscillations are clearly observed due to the coupling of the quantum dots at the temperature of 6 K. The transport behaviors change from resonance tunneling to hoping conduction with increased temperature. The charging energy of the phosphorus donors is approximately 12.8 meV. This work helps clear the basic mechanism of electron transport through donor-induced quantum dots and electron transport properties in the heavily doped nanowire through dopant engineering. 相似文献
3.
Gerardot BD Strauf S de Dood MJ Bychkov AM Badolato A Hennessy K Hu EL Bouwmeester D Petroff PM 《Physical review letters》2005,95(13):137403
We present an optical study of two closely stacked self-assembled InAs/GaAs quantum dots. The energy spectrum and correlations between photons subsequently emitted from a single pair provide not only clear evidence of coupling between the quantum dots but also insight into the coupling mechanism. Our results are in agreement with recent theories predicting that tunneling is largely suppressed between nonidentical quantum dots and that the interaction is instead dominated by dipole-dipole coupling and phonon-assisted energy transfer processes. 相似文献
4.
Yisong Zheng Tianquan Lü Chengxiang Zhang Wenhui Su 《Physica E: Low-dimensional Systems and Nanostructures》2004,24(3-4):290-296
Electronic transport through a one-dimensional quantum dot array is theoretically studied. In such a system both electron reservoirs of continuum states couple with the individual component quantum dots of the array arbitrarily. When there are some dangling quantum dots in the array outside the dot(s) contacting the leads, the electron tunneling through the quantum dot array is wholly forbidden if the electron energy is just equal to the molecular energy levels of the dangling quantum dots, which is called as antiresonance of electron tunneling. Accordingly, when the chemical potential of the reservoir electrons is aligned with the electron levels of all quantum dots, the linear conductance at zero temperature vanishes if there are odd number dangling quantum dots; Otherwise, it is equal to 2e2/h due to resonant tunneling if the total number of quantum dots in the array is odd. This odd–even parity is independent of the interdot and the lead–dot coupling strength. 相似文献
5.
We investigate the Fock-Darwin states of the massless chiral fermions confined in a graphitic parabolic quantum dot. In light of Klein tunneling, we analyze the condition for confinement of the Dirac fermions in a cylindrically symmetric potential. New features of the energy levels of the Dirac electrons as compared to the conventional electronic systems are discussed. We also evaluate the dipole-allowed transitions in the energy levels of the dots. We propose that in the high magnetic field limit, the band parameters can be accurately determined from the dipole-allowed transitions. 相似文献
6.
Structures where the electrons of a two-dimensional electron gas are confined to disconnected regions can be fabricated by the use of appropriate gate geometries. The transport between these electrostatically defined quantum dots takes place by tunneling. Using the tunneling Hamiltonian approach we present a theoretical model of the system including electron-phonon interaction. The relevant coupling constants are determined from realistic wave functions for the expected confinement potentials. The phonon part of the Hamiltonian is diagonalized using a canonical transformation. Starting from the determination of the transmission matrix for the interacting system we calculate the current-voltage characteristics for different temperatures and phonon coupling strengths. 相似文献
7.
The influence of the electron-LO-phonon coupling on energy spectrum of the low-lying states ofan exciton inparabolic quantum dots is investigated as a function of dot size. Calculations are made by using the method of few-bodyphysics within the effective-mass approximation. A considerable decrease of the energy in the stronger confinement rangeis found for the low-lying states of an exciton in quantum dots, which results from the confinement of electron-phononcoupling. 相似文献
8.
Sapmaz S Jarillo-Herrero P Blanter YM Dekker C van der Zant HS 《Physical review letters》2006,96(2):026801
Current-voltage characteristics of suspended single-wall carbon nanotube quantum dots show a series of steps equally spaced in voltage. The energy scale of this harmonic, low-energy excitation spectrum is consistent with that of the longitudinal low-k phonon mode (stretching mode) in the nanotube. Agreement is found with a Franck-Condon-based model in which the phonon-assisted tunneling process is modeled as a coupling of electronic levels to underdamped quantum harmonic oscillators. A comparison with this model indicates a rather strong electron-phonon coupling factor of order unity. 相似文献
9.
Filippo Troiani 《Solid State Communications》2003,128(4):147-151
I theoretically investigate the Stark shift of the exciton goundstate in two vertically coupled quantum dots as a function of the interdot distance. The coupling is shown to enhance the tuneability of the linear optical properties, including energy and oscillator strength, as well as the exciton polarizability. The coupling regime that maximizes these properties results from the detailed balance between the effects of the single-particle tunneling, of the electric field and of the carrier-carrier interaction. I discuss the relevance of these results to the possible implementation of quantum-information processing based on semiconductor quantum dots: in particular, I suggest the identification of the qubits with the exciton levels in coupled- rather than single-dots. 相似文献
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11.
抛物形量子点中弱耦合极化子的性质 总被引:4,自引:4,他引:0
采用线性组合算符和幺正变换方法研究了抛物形量子点中弱耦合极化子的基态能量和束缚能。计算结果表明,基态能量和束缚能随有效束缚强度增加而减小。随着有效束缚强度逐渐加大,最后逐渐趋于体结构极化子的基态能量。当有效束缚强度给定,基态能随电子-体纵光学声子耦合强度增加而减小。由于有效束缚强度与量子点受限强度平方根成反比,所以量子点受限越强,基态能和束缚能越大,电子-体纵光学声子耦合强度的变化对量子点的影响越小。当量子点受限变弱时,电子-体纵光学声子耦合强度变化对量子点的影响变大。所以在量子点弱受限区域,极化子对量子点的影响不容忽略。 相似文献
12.
A. Chavez-Pirson J. Temmyo H. Ando 《Physica E: Low-dimensional Systems and Nanostructures》2000,7(3-4)
Near-field optical probing, or nanoprobing, achieves spatial resolution that surpasses the diffraction limit of light and makes possible the luminescence imaging and spectroscopy of single quantum dots in dense arrays of dots. We use optical nanoprobing to study self-organized InGaAs quantum dots grown on (3 1 1)B oriented GaAs substrates. Here, we emphasize a new feature of nanoprobing: pressure-induced strain modulation near the surface. Operating in near-field optical excitation–collection mode, the probe makes contact with the surface and exerts direct pressure whose main effect is a compressive uniaxial strain under the probe. By adjusting the applied pressure, we modulate the local strain environment in and around a quantum dot, but still preserve the capability to capture its near-field luminescence. Nanoprobe pressure effects modify the confinement potential and radiative emission of single quantum dots, and the coupling strength between dots. This opens new possibilities for the study and control of the optical and electronic properties of single- and coupled-quantum dots. 相似文献
13.
C. Dal Savio K. Pierz G. Ade H.-U. Danzebrink E.O. Göbel A. Hangleiter 《Applied physics. B, Lasers and optics》2006,84(1-2):317-322
Single self-assembled InAs quantum dots embedded in a In0.12Ga0.88As quantum well and emitting in the near infrared have been optically investigated. The dependence on the excitation power
of the single quantum dot photoluminescence has been used to identify the emission of the biexciton complex. The biexciton
binding energy, which has been measured for a dozen dots, increases with increasing exciton transition energy for the dot
sizes investigated in the present work, as a consequence of stronger confinement in a smaller quantum dot. The obtained data
is compared with experimental results available in the literature for InAs quantum dots.
PACS 78.67.Hc; 73.21.La; 78.55.Cr 相似文献
14.
Christoph Stampfer Stefan Fringes Johannes Gfittinger Francoise Molitor Christian Yolk Bernat Terrds Jan Dauber Stephan Engels Stefan Schnez Arnhild Jacobsen Susanne Droscher Thomas Ihn Klaus Ensslin 《Frontiers of Physics》2011,6(3):271-293
Graphene nanostructures are promising candidates for future nanoelectronics and solid-state quantum information technology. In this review we provide an overview of a number of electron transport experiments on etched graphene nanostructures. We briefly revisit the electronic properties and the transport characteristics of bulk, i.e., two-dimensional graphene. The fabrication techniques for making graphene nanostructures such as nanoribbons, single electron transistors and quantum dots, mainly based on a dry etching ??paper-cutting?? technique are discussed in detail. The limitations of the current fabrication technology are discussed when we outline the quantum transport properties of the nanostructured devices. In particular we focus here on transport through graphene nanoribbons and constrictions, single electron transistors as well as on graphene quantum dots including double quantum dots. These quasi-one-dimensional (nanoribbons) and quasi-zero-dimensional (quantum dots) graphene nanostructures show a clear route of how to overcome the gapless nature of graphene allowing the confinement of individual carriers and their control by lateral graphene gates and charge detectors. In particular, we emphasize that graphene quantum dots and double quantum dots are very promising systems for spin-based solid state quantum computation, since they are believed to have exceptionally long spin coherence times due to weak spin-orbit coupling and weak hyperfine interaction in graphene. 相似文献
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16.
M. Hauser J. Smoliner C. Eder G. Ploner G. Strasser E. Gornik 《Superlattices and Microstructures》1996,20(4):623-626
We report the use of single quantum dot structures as tips on a scanning tunneling microscope (STM). A single quantum dot structure with a diameter of less than 200 nm and a height of 2 μm was fabricated by reactive ion etching. This dot was placed on a 40 μm-high mesa and mounted on the tip of a STM. The topography of large structures such as quantum wires or gold test substrates is clearly resolved with such a tip. To check the transport properties of the tip, quantum dot arrays were fabricated on resonant tunneling double barrier structures using the same process parameters. Conventional tunneling spectroscopy clearly resolved the 0D states in our samples. Using a metal substrate as second electrode such STM tips can be used to perform high resolution energy spectroscopy on single dots and free standing wire structures. 相似文献
17.
Klappenberger F Kühne D Krenner W Silanes I Arnau A García de Abajo FJ Klyatskaya S Ruben M Barth JV 《Physical review letters》2011,106(2):026802
The confinement of Ag(111) surface-state electrons by self-assembled, nanoporous metal-organic networks is studied using low-temperature scanning tunneling microscopy and spectroscopy as well as electronic structure calculations. The honeycomb networks of Co metal centers and dicarbonitrile-oligophenyl linkers induce surface resonance states confined in the cavities with a tunable energy level alignment. We find that electron scattering is repulsive on the molecules and weakly attractive on Co. The tailored networks represent periodic arrays of uniform and coupled quantum dots. 相似文献
18.
采用线性组合算符和幺正变换方法研究磁场对非对称量子点中弱耦合束缚磁极化子性质的影响。导出量子点中弱耦合束缚磁极化子振动频率和基态能量随量子点的横向和纵向有效受限长度、库仑束缚势、磁场的回旋共振频率和电子-声子耦合强度的变化关系。数值计算结果表明:非对称量子点中弱耦合束缚磁极化子的振动频率和基态能量随量子点的横向和纵向有效受限长度的减小而迅速增大。振动频率随库仑束缚势和磁场的回旋共振频率的增加而增大。基态能量随库仑束缚势和电子-声子耦合强度的增加而减小。 相似文献
19.
抛物量子点中强耦合磁极化子的性质 总被引:5,自引:3,他引:2
采用Pekar类型的变分方法研究了抛物量子点中强耦合磁极化子的基态和激发态的性质。计算了基态和激发态磁极化子的束缚能以及磁极化子的共振频率。讨论了这些量对回旋频率和有效限制强度的依赖关系,以及磁极化子光学声子平均数的性质,结果表明:由于Zeeman劈裂,抛物量子点中磁极化子的回旋共振频率劈裂为两支。基态和激发态磁极化子的束缚能以及磁极化子的共振频率都随回旋频率的增加而增大,随量子点的有效束缚强度的增大而减小。 相似文献
20.
C 《Superlattices and Microstructures》2000,28(5-6)
Charging and discharging phenomena from silicon nanocrystals have been studied by means of capacitance–voltage characteristics on P-type metal-oxide-semiconductor (P-MOS) capacitors with embedded self-assembled silicon quantum dots. The dots have a floating gate behavior as shown by the hysteresis onC –V curves. The Si-dots are charged or discharged by direct tunneling of carriers through a 3 nm thick oxide. The nanocrystals could be charged by electrons or holes, depending on the charging bias conditions. The discharge is studied by constant bias method and shows a logarithmic variation with time. Retention times higher than several hours are observed. A simple model is developed in order to evaluate the electric field within the tunneling oxide layer. Then, complete simulations are done for the different discharge paths. The barrier heights are extracted from the discharge data and possible confinement effects are discussed. The results confirm the high potentiality of silicon nanocrystal-floating gates for memory applications. 相似文献