二硫化钼纳米点中的缺陷辅助载流子俘获超快动力学

二硫化钼纳米点正在成为有潜质的半导体材料用于光电设备的应用.然而,关于对其中激子动力学的研究却很少.本文利用飞秒瞬态吸收光谱学来研究二硫化钼纳米点的载流子动力学.结果显示,缺陷辅助的载流子再复合过程与观测到的动力学相符,通过俄歇散射对光激载流子进行俘获至少存在两种不同俘获速率的缺陷.四个过程参与了载流子驰豫,在受到光激发后,立即在~0.5 ps内载流子冷却,然后大部分载流子被缺陷快速俘获,随着泵浦能量的增加,该过程对应的时间从~4.9 ps增加到~9.2 ps,这可以用缺陷态的饱和来解释.接下来,拥有相对慢的载流子俘获速率的其它类型缺陷对小部分载流子进行俘获,该过程约65 ps.最后,剩余的少量载流子通过直接带间跃迁发生电子-空穴再复合,时间约为1 ns.研究结果可以深入了解二硫化钼纳米点中的载流子动力学基本原理,引导其更多的应用.     

Temperature relaxation and energy loss of hot carriers in graphene

The temperature relaxation and energy loss of hot Dirac fermions are investigated theoretically in graphene with carrier–optical phonon scattering. The time evolutions of temperature and energy loss for hot Dirac fermions in graphene are calculated self-consistently. It shows that the carrier–optical phonon coupling results in the energy relaxation of hot carriers excited by an electric field, and the relaxation time for temperature is about 0.5–1 ps and the corresponding energy loss is about 10–25 nW per carrier for typically doped graphene samples with a carrier density range of 1–5×10¹² cm^?2. Moreover, we analyze the dependence of temperature and energy relaxation on initial hot carrier temperature, lattice temperature and carrier density in detail.     

Dependence of hot carriers temperature on lattice temperature in CdS

Non-equilibrium carrier distributions were obtained in CdS at various temperatures from 77 to 400K. A study is made of the influence of the lattice temperature on the carrier temperature. It is found that the higher the lattice temperature the lower is the difference between carrier and lattice temperatures, though carriers are always thermalized among themselves. The results can be accounted for by carrier relaxation through optical polar phonon emission.     

RIBLLⅡ与CSRe中束流控制系统的设计

介绍了兰州重离子加速器冷却存储环（HIRFL-CSR）的实验环CSRe以及次级束线RIBLLⅡ中束流控制系统的设计。该系统主要采用了Java,COM,Oracle,ARM,DSP,FPGA等技术实现了对磁铁电源的实时、同步控制,已达到对束流的控制。该系统已经运行于现场的束流调试中,并在RIBLLⅡ的束流调试中运行正常、性能稳定。     

Relaxation phenomena in electronic and lattice subsystems on iron surface during its ablation by ultrashort laser pulses

Single-shot ablative spallation and fragmentation thresholds, as well as corresponding ablative crater depths, were measured on the surface of iron using optical interferometry, for different ultrashort laser pulse widths in the range τ_las = 0.3–3.6 ps. The nonmonotonic dependence of these thresholds on τlas with the minimum near 1.2 ps (the characteristic electron-phonon relaxation time τ _ep ) represents transport and emission relaxation phenomena for nonthermalized and thermalized carriers, generated by sub- and picosecond laser pulses, respectively. Compared to rather slow spallative ablation, much faster—picosecond—fragmentation ablation of the iron surface through hydrodynamic expansion of its supercritical fluid ceased for τ_las > τ _ep as a result of evaporative cooling.     

亚皮秒脉冲激光辐照硅薄膜热效应的模拟研究

基于Boltzmann方程,采用了Chen J K等人建立的自相关模型,考虑了Si薄膜的热容、热导率、弛豫时间等热力学参量随温度非线性变化的影响.采用有限差分法,数值求解了脉宽为500 fs的激光脉冲辐照2 μm厚硅膜的自相关模型.分析了膜表面载流子浓度、载流子温度、晶格温度等随入射激光功率和脉宽等的变化规律.结果表明：在脉冲辐照初期（t<0.68 ps）,载流子和晶格之间存在着明显的非热平衡性,之后通过相互之间的弛豫碰撞,逐渐达到热平衡,载流子热容是引起载流子温度在早期迅速上升的原因;载流子温度速率方程中单光子吸收、载流子-晶格能量交换和载流子能流变化率对载流子温升影响较大,而多光子吸收、双极能流和带隙能量变化率对载流子温升的影响较小,可以忽略;较高脉冲激光能量（Ф＞0.02 J·cm－2）辐照Si膜,会引起载流子密度方程中的俄歇复合项增大,从而使载流子密度下降率增大,导致载流子温度出现双峰.     

Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells

We demonstrate the ultrafast modulation of interband (IB)-resonant light (1.0–1.1 μm) by near-infrared intersubband (ISB)-resonant light (1.55–1.9 μm) in n-doped InGaAs/AlAsSb multiple quantum wells (QWs) using non-degenerate pump–probe spectroscopy. A modulation with an absorption recovery time of 1.0–2.0 ps has been observed in a planer-type modulation device due to ultrafast ISB relaxation of the carriers. The IB carrier relaxation process in the absence of an ISB-resonant light has also been investigated by time-resolved photoluminescence (PL) measurement. The modulation speed is determined by the inter- and intra-subband relaxation of the carriers in the conduction subband. The modulation speed at 1.1 μm due to an ISB-resonant pump light at 1.95 μm has been observed to be 1.4 ps at excitation energy of 500 fJ/μm².     

Ultrafast relaxation of hot optical phonons in monolayer and multilayer graphene on different substrates

Hot carrier cooling in few-layer and multilayer epitaxial graphene on SiC, and chemical vapor deposition (CVD) grown graphene transferred onto a glass substrate was investigated by transient absorption spectroscopy and imaging. Coupling to the substrate was found to play a critical role in charge carrier cooling. For both multilayer epitaxial graphene and monolayer CVD graphene, charge carriers transfer heat predominantly to intrinsic in-plane optical phonons of graphene. At high pump intensity, a significant number of optical phonons are accumulated, and the optical phonon lifetime presents a bottleneck for charge carrier cooling. This hot phonon effect did not occur in few-layer epitaxial graphene because of strong coupling to the substrate, which provided additional cooling channels. The limiting charge carrier lifetimes at high excitation densities were 1.8 ± 0.1 ps and 1.4 ± 0.1 ps for multilayer epitaxial graphene and monolayer CVD graphene, respectively. These values represent lower limits on the optical phonon lifetime for the graphene samples.     

多晶碲化锌薄膜载能子超快动力学实验研究

利用双波长飞秒激光抽运-探测实验方法测量了掺氮多晶ZnTe薄膜在飞秒激光加热情况下载能子超快动力学过程. 采用包含电子弛豫过程和晶格加热过程的理论模型拟合实验数据, 二者符合得很好. 拟合得到10 ps以内影响掺氮多晶ZnTe薄膜表面超快反射率变化的三个弛豫过程的时间常数均为亚皮秒量级. 其中, 正振幅电子弛豫过程是由电子-光子相互作用引起的载流子扩散和带间载流子冷却过程, 负振幅电子弛豫过程是由缺陷造成的光激载能子的俘获效应引起的, 晶格加热过程主要通过电子-声子耦合过程进行的.     

Carrier transport effects and dynamics in multiple quantum well optical amplifiers

The gain recovery dynamics of multiple quantum well semiconductor optical amplifiers, following gain compression caused by ultrashort optical pulse excitation, have been studied for several devices of different structures. Fast, slow, and intermediate time constants are identified. The fast component (0.6 to 0.9 ps) corresponds to cooling of the dense, inverted electron-hole plasma. The slow component (150 to 300 ps) corresponds to replenishment of carriers from the external bias supply, with the dynamics dominated by spontaneous recombination (primarily Auger) of the electron-hole plasma. The intermediate time constant (2 to 14 ps) is caused by carrier capture by the quantum wells and is structure-dependent. For most of the devices, the capture process is dominated by diffusion-limited transport in the cladding/barrier region. The variation of carrier density and temperature also affects the refractive index profile of the devices and, hence, affects the waveguiding properties. Dynamical variation of the mode confinement factor is observed on the fast and slow timescales defined above.     

Dynamical Theory of X-Ray Diffraction for Restricted Beams: I. Coherent Scattering by a Porous Crystal

The processes of electron spin dynamics in a hybrid nonresonance structure, which includes a layer of a diluted magnetic II–Mn–VI semiconductor and an asymmetric quantum well (QW) of a nonmagnetic III–V semiconductor, are experimentally studied. The nonresonance of the structure is determined by the fact that the level of the ground state of the magnetic layer falls into the range of the excited states of the nonmagnetic QW. The electron polarization in the ground thermalized state of QW is found not to depend on the magnetic part of the structure. However, the magnetic part affects the electron polarization in the excited state via spin injection from the magnetic semiconductor and the mixing of the electronic states of the magnetic and nonmagnetic subsystems of the structure. The possibility of controlling the polarization of an electron spin by carrier excitation toward the region of mixed states along with the absence of depolarizing influence of the magnetic semiconductor on carriers in the thermalized state of QW can be applied to design new spintronic devices along with those that use spin injection, optical orientation, and depolarization.     

High performance of hot-carrier generation,transport and injection in TiN/TiO2 junction

Improving the performance of generation, transport and injection of hot carriers within metal/semiconductor junctions is critical for promoting the hot-carrier applications. However, the conversion efficiency of hot carriers in the commonly used noble metals (e.g., Au) is extremely low. Herein, through a systematic study by first-principles calculation and Monte Carlo simulation, we show that TiN might be a promising plasmonic material for high-efficiency hot-carrier applications. Compared with Au, TiN shows obvious advantages in the generation (high density of low-energy hot electrons) and transport (long lifetime and mean free path) of hot carriers. We further performed a device-oriented study, which reveals that high hot-carrier injection efficiency can be achieved in core/shell cylindrical TiN/TiO₂ junctions. Our findings provide a deep insight into the intrinsic processes of hot-carrier generation, transport and injection, which is helpful for the development of hot-carrier devices and applications.     

Spectral probing of carrier traps in Si–Ge alloy nanocrystals

Photogenerated carriers in Si–Ge alloy nanocrystals (NCs) prepared by co‐sputtering method were investigated by mean of transient induced absorption. The carrier relaxation features multiple components, with three decay life times of τ ≈ 600 fs, 12 ps, and 15 ns, established for Si_0.2Ge_0.8 alloy NCs of a mean crystal size of 9 nm and standard deviation of 3 nm. Deep carrier traps, identified at the boundary between the NCs and the SiO₂ host with the ionization energy of about 1 eV, are characterized by a long‐range Coulombic potential. These are responsible for rapid depletion of free carrier population within a few picoseconds after the excitation, which explains the low emissivity of the investigated materials, and also sheds light on the generally low luminescence of Si/Ge and Ge NCs. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

DYNAMICS OF CARRIER CAPTURE IN AlGaAs/GaAs MULTIPLE QUANTUM WELLS

Dynamics of carrier relaxation and capture in AlGaAs/GaAs multiple quantum wells (MQW) at 80 K is studied using picosecond luminescence and femtosecond absorption saturation measurements. Carriers generated in the wells and in the barriers scatter initially out of the excited states to a quasi-equilibrium state in 35 and 400 femtoseconds, respectively, before they are captured into the bound states of the quantum wells. Carrier capture occurs during carrier cooling and recombination. A carrier capture time of 25 ps has been deduced from time-resolved luminescence.     

GaAs光生载流子动力学机制的超快光谱学分析

利用飞秒激光泵浦探测技术,通过改变光学参数,如中心波长、功率,分别对未故意掺杂高纯n型砷化镓的差分反射谱进行研究,进而分析室温下砷化镓光生载流子动力学过程.首先,当泵浦光功率恒为100mW,探测光功率恒为10mW时,随着中心波长的增大,差分反射率峰值随之增大,信噪比也随之增加.其次,通过拟合不同延迟时间下泵浦光功率和差分反射率的实验曲线,并和理论模型比较后发现,在一定范围内的泵浦功率和差分反射率呈线性相关,未故意掺杂高纯n型砷化镓的饱和载流子浓度为(3.590 1±0.310 3)×1017 cm~(-3).在此基础上,把光生载流子动力学过程分为3个过程:804±67fs的光激发过程、134~268fs的初始散射过程、1ps和3~6ps的复合过程.研究表明,差分反射率与探测功率不存在显著的依赖性,但差分反射谱的信噪比与探测功率存在相关性.     

Donor-acceptor pair capture cross section for highly excited electrons in polar semiconductors

The capture cross section σ (R) for Donor-Acceptor Pairs (DAPs) with pair separation distance R is improved for the case of hot carriers by taking into account the LO-phonon interaction so that an energy dependend cross section σ(E_k, R) results. This latter process, which is of importance for a non-equilibrium carrier distribution, yields a preferential occupation of close DAPs thus provoking a blue shift and a deformation of the main emission band if compared with line profiles where only thermalized carriers are involved.     

Optical detection of picosecond processes of formation of free carriers and primary photolysis products in AgBr(J) nanocrystals

The fastest picosecond processes occurring in the electronic stage of photolysis in photosensitive AgBr(J) nanocrystals—the generation of free carriers and their initial capture by lattice defects and impurity centers with subsequent transition of captured carriers to deeper levels—were identified and quantitatively studied by methods of optical detection for the first time. The experimental characteristic times of these processes for AgBr(J) nanocrystals were shorter than 5 ps in the first stage and about 30 and 300 ps (for the generation and the capture of free carriers, respectively) in subsequent stages. The minimum durations of pulses of destructive nonactinic radiation at which dephotolysis processes can be reliably detected were estimated to be 20 ps for simultaneous illumination by pulses of destructive and exciting radiation and about 5 ps in the case of successive illumination. The decisive role of two-photon absorption in nonlinear processes of formation of hidden images under the action of picosecond pulses of nonactinic radiation was shown experimentally.     

Heating and cooling of a two-dimensional electron gas by terahertz radiation

The absorption of terahertz radiation by free charge carriers in n-type semiconductor quantum wells accompanied by the interaction of electrons with acoustic and optical phonons is studied. It is shown that intrasubband optical transitions can cause both heating and cooling of the electron gas. The cooling of charge carriers occurs in a certain temperature and radiation frequency region where light is most efficiently absorbed due to intrasubband transitions with emission of optical phonons. In GaAs quantum wells, the optical cooling of electrons occurs most efficiently at liquid nitrogen temperatures, while cooling is possible even at room temperature in GaN heterostructures.     

Picosecond dynamics of quantum structure carriers measured by time resolved photoinduced intersubband absorption

A novel interband-pump intersubband-probe technique is developed in order to study the dynamics of photogenerated carriers and excitons in GaAs/AlGaAs superlattices by time resolved photoinduced absorption. The photogenerated population reaches a thermal distribution a few picoseconds after the excitation. The time dependence of the intersubband absorption strength and its time resolved excitation spectra yield a measure for the time it takes for that population to cool first to the lattice temperature and then to radiatively decay. The first time is roughly 70-100 ps depending on the excess energy with which the photogenerated carriers are created. The second is on a sub-nanosecond scale and depends linearly on the lattice temperature.     

Comparison of optical pump-probe characterization of low-temperature-grown GaAs at well-above-bandgap and near-bandedge wavelengths

Annealed low-temperature-grown GaAs was studied by time-resolved photoreflectance measurement at well-above-bandgap photon energies and by photoreflectance as well as transmission measurements at near-bandedge wavelength. At near-bandedge wavelength, the initial changes in reflectivity and transmission were observed to relax at identical relaxation rate, which was attributed to the absence of carrier cooling and the domination of carrier trapping. All the measured photoreflectance traces were found to be well fitted by the previously proposed three-component decomposition procedure. Among the three components, the fast positive peak was attributed to absorption bleaching and its relaxation, that is, the scattering of the photo-carrier out of their initially excited states by carrier cooling and trapping. The decay times of the positive peak, combined with the carrier cooling times extracted from photoreflectance measurement on semi-insulating GaAs, give consistent estimate of carrier trapping time at all wavelengths within the spectral range. Our results verify that well-above-bandgap photoreflectance measurement combined with the three-component fitting procedure can be used to estimate the photo-carrier trapping time which are consistent with that obtained by near-bandedge photoreflectance and transmission techniques.