Application of pseudopotential theory to magnetic semiconductor heterostructures

The results of empirical pseudopotential calculations for the semiconductor compound Cd_1 − xMn_xTe are presented. The effective electron and hole masses obtained from the pseudopotential calculations are then employed in an envelope function approximation, using two different effective mass Hamiltonians to evaluate the transition energies of the excitonic ground state in CdTe– Cd_1 − xMn_xTe quantum wells of variable width. It is shown that in non-magnetic systems it is not possible to utilize exciton energies alone to either distinguish between different model Hamiltonians or to quantify the interface roughness. However, it is shown that the latter can be quantified in magnetic systems via the resulting Zeeman effect.     

Nonlinear properties in InxGa1 − xAs/GaAs multiple quantum well laser structures

In this paper we investigated nonlinear properties and lasing in In_xGa_1 − xAs/GaAs multiple quantum wells grown by metal-organic chemical vapour deposition. A systematic study, performed by high excitation photoluminescence measurements as a function of excitation intensity, allowed us to identify the minimum well width for observing stimulated emission from well states. We also determined the threshold for stimulated emission for well and barrier lasing. Radiative recombination energies are identified by using theoretical data obtained in the effective mass approximation, including boundary conditions and strain.     

Chirped Bloch oscillations in strain-balanced InGaAs/InGaAs superlattices

Bloch oscillations excited in a strain-balanced In_xGa_1 − xAs/In_yGa_1 − yAs superlattice by fs optical pulses at 1.55 μ m are investigated in time-resolved transmission spectroscopy. The transition from the coherent oscillatory motion to an incoherent drift transport of the electrons is observed via a transient frequency shift of the Bloch oscillations due to the associated screening of the applied electric field. These electric field changes are analyzed quantitatively as a function of the initial field strengths and excitation densities. The incoherent transport can be described by a drift-diffusion model. As a result, the carrier mobility in the superlattice is obtained on a picosecond timescale.     

The improvement of pyroelectric properties of PZT thick films on Si substrate by TiOx barrier layer

The effects of TiO_x diffusion barrier layer thickness on the microstructure and pyroelectric characteristics of PZT thick films were studied in this paper. The TiO_x layer was prepared by thermal oxidation of Ti thin film in air and the PZT thick films were fabricated by electrophoresis deposition method (EPD). To demonstrate the barrier effect of TiO_x layer, the electrode/substrate interface and Si content in PZT thick films were characterized by scanning electron microscope (SEM) and X-ray energy dispersive spectroscopy (EDS), respectively. The TiO_x barrier thickness shows significant influence on the bottom electrode and the pyroelectric performance of the PZT thick films. The average pyroelectric coefficient of PZT films deposited on 400 nm TiO_x layer was about 8.94 × 10⁻⁹ C/(cm² K), which was improved by 70% than those without diffusion barrier layer. The results showed in this study indicate that TiO_x barrier layer has great potential in fabrication of PZT pyroelectric device.     

Resonances in the final Rydberg state population of multiply charged ions ArVIII,KrVIII, and XeVIII escaping solid surfaces

The appearance of resonances (pronounced maxima at n_A = n_res) in the probability distributions for the population of the Rydberg state (n_A, l_A, m_A) of multiply charged ions (Z ? 1) escaping solid surfaces at intermediate velocities (v ≈ 1 a.u.) is discussed. Within the framework of the time-symmetrized two-state vector model, in which the state of a single active electron is described by two wave functions Ψ₁ and Ψ₂, the resonances are explained by means of an electron tunneling in the very vicinity of the ion–surface potential barrier top. To include this specific feature of electron transitions into the model, the appropriate etalon equation method is used in the calculation of the function Ψ₁. We consider the ions ArVIII, KrVIII, and XeVIII with the same core charges Z = 8 a.u., but with different core polarizations. The effect of the ionic core polarization is associated with the function Ψ₂. The population probabilities for n_A ≈ n_res are complemental to those obtained recently for n_A < n_res, and in sufficiently good agreement with available beam-foil experimental data. The pronounced resonances in the final population distributions are recognized only in the case of ArVIII ion and for the lower values of the solid work function (argon anomaly).     

Dielectric and piezoelectric properties of Li-substituted lead-free (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–BaTiO3 ceramics

Lead-free 0.79(Bi_0.5Na_0.5)TiO₃–0.14[Bi_0.5(K_0.5−xLi_x)]TiO₃–0.07BaTiO₃ (BNBK79 + xLi, x = 0.0, 0.1, 0.2, 0.25, 0.3, and 0.4) ceramics were prepared by conventional solid state reaction process. The crystalline structures and surface morphologies are investigated by X-ray diffraction method and scanning electron microscopy. Dielectric and piezoelectric properties were measured. With increasing of lithium substitution, the Curie temperatures of BNBK79 + xLi ceramics increase, but the maximum value of the dielectric constant decreases. And a relatively large remnant polarization of 17.6 μC/cm² and 157 pC/N of d₃₃ has been obtained when x = 0.3.     

Modified Lanthanum Zirconium Oxide buffer layers for low-cost,high performance YBCO coated conductors

The pyrochlore Lanthanum Zirconium Oxide, La₂Zr₂O₇ (LZO), has been developed as a potential replacement barrier layer in the standard RABiTS three-layer architecture of physical vapor deposited CeO₂ cap/YSZ barrier/Y₂O₃ seed on Ni–5%W metal tape. The main focus of this research is to ascertain whether: (i) we can further improve the barrier properties of LZO; (ii) we can modify the LZO cation ratio and still achieve a high level of performance; and (iii) it is possible to reduce the number of buffer layers. We report a systematic investigation of the LZO film growth with varying compositions of La:Zr ratio in the La₂O₃–ZrO₂ system. Using a metal–organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of La_xZr_1?xO_y (x = 0.2–0.6) on standard Y₂O₃ buffered Ni–5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial LZO phase with only (0 0 1) texture can be achieved in a broad compositional range of x = 0.2–0.6 in La_xZr_1?xO_y. Both CeO₂ cap layers and MOD–YBCO films were grown epitaxially on these modified LZO barriers. High critical currents per unit width, I_c of 274–292 A/cm at 77 K and self-field were achieved for MOD–YBCO films grown on La_xZr_1?xO_y (x = 0.4–0.6) films. These results indicate that LZO films can be grown with a broad compositional range and still support high performance YBCO coated conductors. In addition, epitaxial MOD La_xZr_1?xO_y (x = 0.25) films were grown directly on biaxially textured Ni–3W substrates. About 3 μm thick YBCO films grown on a single MOD–LZO buffered Ni–3W substrates using pulsed laser deposition show a critical current density, J_c, of 0.55 MA/cm² (I_c of 169 A/cm) at 77 K and 0.01 T. This work holds promise for a route for producing simplified buffer architecture for RABiTS based YBCO coated conductors.     

The static and dynamic screening of power loss of a two-dimensional electron gas

Experimental results concerning the well-width dependence of the acoustic-phonon-assisted energy relaxation of a two-dimensional electron gas in GaAs/Ga_1 − xAl_xAs quantum-well structures are compared with theoretical models that involve piezoelectric and deformation-potential scattering and the effects of static and dynamic screening of the electron–acoustic phonon interaction. It is shown that screening only slightly modifies the predictions of the approximate calculations.     

The effect of compositional disorder on electronic band structure in GaxIn1 − xAsySb1 − yalloys lattice matched to GaSb

A pseudopotential formalism coupled with the virtual crystal approximation are applied to study the effect of compositional disorder upon electronic band structure of cubic Ga_xIn_1 − xAs_ySb_1 − yquarternary alloys lattice matched to GaSb. The effects of compositional variations are properly included in the calculations. Our theoretical results show that the compositional disorder plays an important role in the determination of the energy band structure of Ga_xIn_1 − xAs_ySb_1 − y/GaSb and that the bowing parameter is dominated by the group V-anion-based sublattice. Moreover, the absorption at the fundamental optical gaps is found to be direct within a whole range of the x composition.     

Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field

The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga_1 − xAl_xAs quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and the size of the quantum well in the presence of an arbitrary magnetic field. The applied magnetic field is taken to be parallel to the axis of growth of the quantum well structure. The role of the asymmetric barriers, magnetic field, and well width in the excitonic binding is discussed as the tunability parameters of the GaAs/Ga_1 − xAl_xAs system.     

The effect of copper concentration on structural,optical and dielectric properties of CuxZn1 − xS thin films

Cu_xZn_1 ? xS (x = 0, 0.25, 0.50, 0.75, 1) thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The copper concentration (x) effect on the structural, morphological and optical properties of Cu_xZn_1 ? xS thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing copper concentration. The energy bandgap values were changed from 2.07 to 3.67 eV depending on the copper concentration. The refractive index (n), optical static and high frequency dielectric constants (ε_o, ε_∞) values were calculated by using the energy bandgap values as a function of the copper concentration.     

1.34 μm fluorescence and laser properties of Nd:La0.11Y0.89VO4 crystal

For Nd:La_xY_1−xVO₄ (x = 0.11) crystal, the ⁴F_3/2 → ⁴I_13/2 transition property was investigated for the first time. The fluorescence peak of Nd:La_0.11Y_0.89VO₄ crystal exhibited obvious inhomogeneous broadening comparing with that of Nd:YVO₄ crystal. With laser diode array as pump source, 1.34 μm continuous-wave (CW) and active Q-switched laser operations based on ⁴F_3/2 → ⁴I_13/2 transition were realized. For CW laser operation, the maximum output power of 2.47, 2.13 W is obtained with slope efficiencies of 29.4%, 27.6%, and optical to optical conversion efficiency of 26.2%, 24.7%, respectively for a, c cut crystal samples. For acousto-optic (AO) Q-switched laser operation, the shortest pulse width, highest peak power and maximum pulse energy came from the a-cut sample, which were 13 ns, 2.69 kW and 35 μJ, respectively.     

Empirical expression for the composition and temperature dependence of the energy gap in InAlSb

An empirical expression for the energy bandgap as a function of alloy composition x and temperature for In_1−xAl_xSb was reported. The In_1−xAl_xSb epitaxial layers were grown by molecular beam epitaxy (MBE) on InSb(1 0 0) substrate, utilizing a p⁺–p⁺–n–n⁺ structure. High resolution X-ray diffraction was used to characterize the epitaxial layers. The Al composition of 2.8% was obtained by assuming the Bragg’s formula and Vegard’s law. Spectral response measurement of the diodes has been employed to investigate the temperature dependence of the band gap of In_1−xAl_xSb alloys in the range between 77 K and 260 K. The calculated results for energy gap of InAlSb were in good agreement with the available data and our experimental observation.     

Investigation of carrier scattering mechanisms in n-Cd1−xMgxSe single crystals using Fourier Transform Infrared Spectroscopy

This paper presents results of investigations of carrier scattering mechanisms in n-Cd_1−xMg_xSe mixed crystals with magnesium content varying from x = 0 to x = 0.33. Experimental results obtained by means of the Fourier Transform Infrared Spectroscopy (FT-IR) and Hall measurements are discussed in the frame of the Drude and the quantum theories. The character of the wavelength dependence of the optical absorption coefficient in investigated crystals was found to be of the type ∼λ^p, where 2 < p < 3.5. The p = 2 is expected from the Drude theory and the relaxation time approximation. The obtained experimental values of p parameter suggest that the optical phonon and impurity scattering mechanisms are dominating scattering mechanisms in these crystals. The calculated carrier concentration from optical absorption spectrum for a n-CdSe crystal is in a good agreement with this obtained from Hall measurement.     

On the step-graded doped-channel (SGDC) field-effect transistor

An i-InGaP/n-In_xGa_1 − xAs/i- GaAs step-graded doped-channel field-effect transistor (SGDCFET) has been fabricated and studied. Due to the existence of a V-shaped energy band formed by the step-graded structure, a large output current density, a large gate voltage swing with high average transconductance, and a high breakdown voltage can be expected. In this study, first, a theoretical model and a transfer matrix technique are employed to analyze the energy states and wavefunctions in the step-graded quantum wells. Experimentally, for a 1  ×  80 μm²gate dimension device, a maximum drain saturation current density of 830 mAmm ^− 1, a maximum transconductance of 188mSmm ^− 1 , a high gate breakdown voltage of 34 V, and a large gate voltage swing 3.3 V with transconductance larger than 150 mSmm ^− 1are achieved. These performances show that the device studied has a good potentiality for high-speed, high-power, and large input signal circuit applications.     

Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

In this work, we investigate the effect of the δ-Si doping on the barrier and the spacer thickness on the electronic properties of AlGaAs/GaAs HEMTs structures grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. Photoluminescence measurements as function of the temperature are used to determine the relaxation processes of the electron and the hole in the channel. The photoluminescence characterizations of Si-delta-doped AlGaAs/GaAs HEMTs structures have been studied in the 10–300 K temperature range. Low temperature PL spectra show the optical transition (E_e–h) that occurs between the fundamental states of electrons to holes in the GaAs channel. Increase of the Si-δ-doping density and decrease of the spacer width improve the two-dimensional electron gas confinement and decrease defects densities in the canal. The band structure of Si-delta-doped AlGaAs/GaAs HEMTs structures at T = 10 K has been studied theoretically using the finite differences method to self-consistently and simultaneously solve Schrödinger and Poisson equations written within the Hartree approximation.     

Doping dependence of irreversibility line in Y1−xCaxBa2Cu3O7−δ

The irreversibility lines (IL) for series of Y_1?xCa_xBa₂Cu₃O_7?δ (x = 0.025; 0.10 and 0.20) polycrystalline samples with different overdoping were investigated. The irreversibility fields were determined from measurements of third harmonics AC susceptibility as a function of DC field at constant temperature. For the weakly overdoped sample (with x = 0.025) H_irr(77 K) is about 7 T, which is higher than the previously reported for the non-substituted one. The irreversibility line behavior is typical for glass–liquid phase transition and this is confirmed by transport measurements. On increasing the overdoping the irreversibility fields were shifted towards lower temperatures. The behavior of H_irr(T) for the highly overdoped sample (with x = 0.20) is influenced by the surface barrier effect. It is supposed that in highly overdoped specimen the process of phase separation is enhanced and the Fermi clusters grow in size. This leads to a suppression of the bulk pinning and to a domination of the surface barrier effects and flux creep as well. As a confirmation, the obtained quadratic J_c(T) dependences were presented demonstrating the existence of S–N–S type inter-grain joints in the highly overdoped samples.     

The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1 − xAs1 − yNy/GaAs laser structures

We present a review of published work concerning the effect of In and N compositions on the operation wavelength, optical quality and lasing threshold in Ga_xIn_1 − xAs_1 − yN_y/GaAs QW and double heterostructure lasers. We show that the emission wavelength in the range between 1.0 and 1.4 μ m can be obtained for a wide range of In and/or N concentrations. However, in most Fabry–Perot lasers and vertical cavity surface emitting lasers (VCSELs) reported in the literature, the threshold current density plotted as a function of the relative In/N composition (R =  (1  − x) / y) indicate a broad minima for 40  < R <  70, suggesting an optimum relative composition. We also present the results of our studies concerning the optical quality of Ga_xIn_1 − xAs_1 − yN_y/GaAs single quantum wells for R =  15. We show that the optical quality of GaInAsN can be improved while achieving a red shift in the PL spectra. This is unlike the results obtained by rapid thermal annealing or conventional annealing, which are widely employed as post-growth treatment techniques, where any increase in the PL intensity is almost always accompanied by an undesired blue shift.     

Oxygen nonstoichiometry and defect equilibrium in La2 − xSrxNiO4 + δ

Nonstoichiometric variation of oxygen content in La_2 ? xSr_xNiO_4 + δ (x = 0, 0.1, 0.2, 0.3, 0.4) and decomposition P(O₂) were determined by means of high temperature gravimetry and coulometric titration. The measurements were carried out in the temperature range between 873 and 1173 K and the P(O₂) range between 10^? 20 and 1 bar. La_2 ? xSr_xNiO_4 + δ showed the oxygen excess and the oxygen deficient compositions depending on P(O₂), temperature, and the Sr content. The value of partial molar enthalpy of oxygen approaches zero as δ increases in the oxygen excess region, which indicate that the interstitial oxygen formation reaction is suppressed as δ increase. The relationship between δ and logP(O₂) were analyzed by two types of defect equilibrium models. One is a localized electron model, and the other is a delocalized electron model. Both models can well explain the oxygen nonstoichiometry of La_2 ? xSr_xNiO_4 + δ with a regular solution approximation.     

Influence of thickness and band structure of insulating barriers on resistance and tunneling magnetoresistance properties of magnetic tunnel junctions with Al-oxide and Ti-alloyed Al-oxide barriers

We investigated the influence of insulating barrier thickness and the Ti composition dependence of the band structure of Al-oxide on the resistance and tunneling magnetoresistance (TMR) behavior of the magnetic tunnel junction (MTJ). Low resistance × area (RA) value (1.1 MΩ μm²) was achieved by decreasing the Al-oxide thickness down to 1.0 nm. However, this led to the partial oxidation of the bottom ferromagnetic (FM) electrode of the junction and non-continuous thin barriers by the occurrence of pinholes, with low TMR ratio of 8.3%. For an alternative for low RA value, we developed a new Ti-alloyed Al-oxide (TiAlO_x) that had lower band gap than Al-oxide as an insulating barrier of MTJ. As the Ti concentration increased up to 5.33 at.% Ti in Al, the RA value of the MTJs was reduced from 9.5 to 0.69 MΩ μm², owing to the band-gap reduction of TiAlO_x caused by the formation of extra bands, mainly composed of Ti-3d orbitals, within the band gap. It was analyzed that TiAlO_x has localized d states in the band gap below the conduction band. In addition, the TMR ratio increased with the Ti concentration and reached a maximum of 49% at 5.33 at.% Ti owing to the microstructural evolution of Ti–Al alloy film in the pre-oxidation state.