Excitonic magnetic polaron dynamics of MBE grown CdTe/Cd1 − xMnxTe,Cd1 − xMnxTe/Cd1 − vMgyTe single quantum wells in magneti fields

Excitonic lifetimes in Cd_1 − xMn_Ue2Te, Cd_1 − xMg_xTe epilayers and CdTe/Cd_1 − xMn_xTe, Cd_1 − xMn_xTe/Cd_1 − vMg_yTe single quantum wells with different well widths and Mn, Mg compositions are investigated. The excitonic lifetimes are found to reduce drastically by applying external magnetic fields to samples with giant Zeeman splittings. The observed phenomenon is interpreted in terms of the PL decay time contribution from the long-life dark excitons which can convert to excitons for recombinations by a spin-flip process. We attribute the lifetime reduction to the depletion of dark excitons due to their crossing over the exciton energies for dipole allowed transitions in magnetic fields.     

Predictions of the bonding properties inCd1 − xZnxTe

The electronic, optical and elastic properties of the ternary II–VI semiconductor alloys Cd_1 − x Zn _xTe are calculated by thesp³s ^*  semi-empirical tight-binding theory and the bond-orbital model. We found a nonlinear decrease of the transverse effective charge and refractive index and a nonlinear increase of the bandgap and elastic constants with increasing Zn composition x. For all these behaviours, the corresponding bowing factors are predicted. The results are compared with previous theoretical estimates and experiments.     

The effect of compositional disorder on electronic band structure in GaxIn1 − xAsySb1 − yalloys lattice matched to GaSb

A pseudopotential formalism coupled with the virtual crystal approximation are applied to study the effect of compositional disorder upon electronic band structure of cubic Ga_xIn_1 − xAs_ySb_1 − yquarternary alloys lattice matched to GaSb. The effects of compositional variations are properly included in the calculations. Our theoretical results show that the compositional disorder plays an important role in the determination of the energy band structure of Ga_xIn_1 − xAs_ySb_1 − y/GaSb and that the bowing parameter is dominated by the group V-anion-based sublattice. Moreover, the absorption at the fundamental optical gaps is found to be direct within a whole range of the x composition.     

Preparation,characterization and electrical property of Mn-doped ceria-based oxides

Manganese-doped ceria-based oxides, Ce_1−xMn_xO_2−δ (0.05 ≤ x ≤ 0.3) and Ce_1−x−yGd_xMn_yO_2−δ˙ (0.05 ≤ x≤ 0.2, 0.05 ≤ y ≤ 0.25) were synthesized, and crystal phase analysis by XRD and measurements of electrical properties were performed. Solubility limit of Mn in Ce_1−xMn_xO_2−δ˙ seemed to be between 5 mol% and 10 mol% and Mn₃O₄ was the main by-product above the solubility limit in the case of heat treatment at 1300 °C. Judging from the oxygen partial pressure dependence of total conductivity and emf measurements, Ce_1−xMn_xO_2−δ˙ is a single-phase mixed conductor within the composition below the solubility limit, and when the composition of Mn exceeds the solubility limit, it becomes the dual-phase mixed conductor of Ce_1−xMn_xO_2−δ˙ and Mn₃O₄. The doing of Mn in gadlia-doped ceria, Ce_1−x−yGd_xMn_yO_2−δ˙ (0.05 ≤ x ≤ 0.2, 0.05 ≤ y ≤ 0.25), was more difficult than that in CeO₂ presumably due to the preferential reaction between Gd and Mn to give GdMnO₃ to the GDC solid solution formation, and the Mn doping seems not to be so effective in preparing the mixed ionic–electronic conductor based on GDC.     

Spectroscopic studies of the structural properties of Ni substituted spinel LiMn2O4

Microstructure and local structure of spinel LiNi_xMn_2 − xO₄ (x = 0, 0.1 and 0.2) were studied using X-ray diffraction (XRD) and a combination of X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge spectroscopy (XANES) and Raman scattering with the aim of getting a clear picture of the local structure of the materials responsible for the structural stability of LiNi_xMn_2 − xO₄. XRD study showed that Ni substitution caused the changes of the materials’ microstructure from the view of the lattice parameter, mean crystallite size, and microstrain. XPS and XANES studies showed the Ni oxidation state in LiNi_xMn_2 − xO₄ was larger than + 2, and the Mn oxidation state increased with Ni substitution. The decrease of the intensity of the 1s → 4p_z shakedown transition on the XANES spectra indicated that Ni substitution suppressed the tetragonal distortion of the [MnO₆] octahedron. The Mn(Ni)–O bond in LiNi_xMn_2 − xO₄, which is stronger than the Mn–O bond in LiMn₂O₄ was responsible for the blue shift of the A_1g Raman mode and could enhance the structural stability of the [Mn(Ni)O₆] octahedron.     

Spectral sensitivity dependencies of backside illuminated planar MCT photodiodes

Spectral sensitivity dependencies of Hg_1−xCd_xTe (0.20 ⩽ x ⩽ 0.25) backside illuminated planar photodiodes were investigated at T = 80 K to study their longwavelength edge features. It was shown that the longwavelength part of these spectral dependencies is mainly formed by the exponential wavelength dependence of the optical transitions. Empirical dependencies of cut-off wavelengths at different values (λ_max, λ_0.5, λ_0.9) were obtained. The influence of the epitaxial layer thickness on the maximum sensitivity position was also studied.     

Experimental evidence for the third level (А+) of Hg vacancy in Hg1−xCdxTe

Mercury vacancy in Hg_1-xCd_xTe is not a two-level (as it was supposed until now), but a three-level acceptor. A third, most shallow (1–1.5 meV) level (А⁺ state) appears due to a capture of a third hole by a neutral acceptor, after the two deeper vacancy levels (A^? and А⁰ states) are already occupied by holes. Due to a capture of nonequilibrium holes by neutral mercury vacancies (under radiation) a positive space charge region arises near an irradiated surface. This causes the anomalies of photoelectromagnetic effect, observed in р-Hg_1?xCd_xTe at T < 10–12 K.     

Quantum dots of Cd0.5Mn0.5Te semimagnetic semiconductor formed by the cold isostatic pressure method

Cd_0.5Mn_0.5Te is a semimagnetic semiconductor, which crystallizes in the zinc-blende structure (ZB) and exhibits a magnetic spin glass like transition at 21 K. Under pressure it shows a first-order phase transition around 2.6 GPa to the NaCl like structure. In this work, the pressure cycled method using a Paris–Edinburgh cell up to 8 GPa has been applied to Cd_0.5Mn_0.5Te samples in order to obtain recovered nanocrystals. The nanoparticles have been characterized by EDX and electron microscopy. The X-ray and electron diffraction results confirmed the existence of nanocrystals in the ZB phase with an average size of 7 nm. Magnetization measurements made in the range of 2–300 K at low field show that the temperature of the magnetic transition decreases when the crystallites’ size is reduced.     

Admittance of metal–insulator–semiconductor structures based on graded-gap HgCdTe grown by molecular-beam epitaxy on GaAs substrates

Metal–insulator–semiconductor structures based on n-Hg_1−xCd_xTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe content were formed on both sides of the epitaxial HgCdTe. Admittance of these structures was studied experimentally in a wide temperature range (8–150) K. It is shown that an increase in the composition of the working layer and a decrease in temperature lead to a decrease in the frequency of transition to high-frequency behavior of the capacitance–voltage characteristics. The differential resistance of space charge region in the strong inversion increases with the composition of the working layer and for x = 0.22 and 0.25, the differential resistance is limited by the Shockley-Read generation. The values of the differential resistance of space charge region at different frequencies and temperatures were found.     

Synthesis and electrical properties of nanocrystalline Ca1 − xEuxMnO3 ± δ (0.1 ≤ x ≤ 0.4) powders prepared at low temperature using citrate gel method

Nanopowders of Ca_1 − xEu_xMnO₃ (0.1 ≤ x ≤ 0.4) manganites were synthesized as a single phase using the auto gel-combustion method. The citrate method shows to be simple and appropriate to obtain single phases avoiding segregation or contamination. The Ca_1 − xEu_xMnO₃ system has been synthesized at 800 °C during 18 h, against the conventional method of mixing oxides used to obtain these materials at higher temperatures of synthesis. The formation reaction was monitored by X-ray diffraction (XRD) analysis and an infrared absorption technique (FTIR). The polycrystalline powders are characterised by nanometric particle size, ∼ 48 nm as determined from X-ray line broadening analysis using the Scherrer equation. Morphological analysis of the powders, using the scanning electron microscope (SEM), revealed that all phases are homogeneous and the europium-substituted samples exhibit a significant decrease in the grain size when compared with the undoped samples. The structure refinement by using the Rietveld method indicates that the partial calcium substitution by europium (for x ≥ 0.3) modifies the orthorhombic structure of the CaMnO₃ perovskite towards a monoclinic phase. All manganites show two active IR vibrational modes around 400 and 600 cm^− 1. The high temperature dependence of electrical resistivity (between 25 and 600 °C) allows us to conclude that all the samples exhibit a semiconductor behaviour and the europium causes a decrease in the electrical resistivity by more than one order of magnitude. The results can be well attributed to the Mn⁴⁺/Mn³⁺ ratio.     

Supersymmetric quantum-well shape optimization for intersubband bound–continuum second harmonic generation

A method is described for the optimized design of quantum-well structures, with respect to maximizing the second-order susceptibilities relevant for second harmonic generation. The possibility is explored of obtaining resonantly enhanced nonlinear optical susceptibilities in quantum wells with two bound states and a continuum resonance state as the dominant third state. The method relies on applying the isospectral (energy structure preserving) transformations to an initial Hamiltonian in order to generate a parameter-controlled family of Hamiltonians. By changing the values of control parameters one changes the potential shape and thus the values of matrix elements relevant to susceptibility to be maximized. The method was used for the design of Al_xGa_1 − xAs -based QWs. The results indicate the possibility of employing continuum states in resonant second harmonic generation at higher photon energies,ℏω =  200–300 meV.     

On the superconductivity and structural properties of YBa2Cu3 − xCdxO7 − y

A series of superconducting cuprates with the nominal composition YBa₂Cu_3 − xCd_xO_7 − yand the effect of Cd substitution on Cu sites in this compound is presented. X-ray powder diffraction patterns for these cadmium cuprates with reduced diamagnetism indicate an orthorhombic unit cell like-perovskite structure for (0 ≤ x ≤ 0.15), while for higher Cd concentration, i.e.x = 1.0 the material is polyphasic. The observed superconducting transition temperature of the samples is nearly the same ([formula] K), except for (x = 1.0) whereT_cdrops to 72 K and a transition from metallic to semiconducting behavior of the normal state of the resistivity is observed. Such a decrease inT_cfor higher Cd concentration could be attributed to the presence of the green phase in this composition.     

Stimulated emission from optically excited CdxHg1−xTe structures at room temperature

Main requirements for the optimization of Cd_xHg_1?xTe (MCT) structures with a view to increasing the wavelength of stimulated emission under optical pumping are discussed. A 2–2.5 μm stimulated emission from optimized MCT structures is observed experimentally at room temperature. The measured values of the gain in the active medium amount to 50 cm^?1 at a 2 μm emission wavelength.     

The miscibility of CuxAg1 − xI using a Tersoff potential

Simulation methods have been used to study the miscibility ofCu_xAg_1 − xI based on a Tersoff potential. Monte Carlo calculations show that Cu_xAg_1 − xI is a complete solid solution. This result agrees well with experiments using NMR and X-ray diffractions methods. Structural, elastic and thermodynamic properties are also predicted at 0.25, 0.5 and 0.75 using molecular dynamics simulations.     

Realization of an uncooled photoconductor based on Hg1−xCdxTe operating in the 2–6 μm spectral range

A p-type uncooled Hg_1−xCd_xTe photoconductor was realized which can be used in the 2–6 μm spectral region with a maximum detectivity occurring at 5 μm. The basic parameters of this photoconductor have been optimized as a function of composition, doping, thickness and dissipation power. Numerical calculations show that the optimum values for composition, thickness, doping (defined as Z=p₀/n_i) and bias power density are equal to 0.240, 20 μm, 2.2 and 0.05 W mm⁻², respectively. Comparison of the experimental and numerical results shows a good agreement.     

Donor binding energies in GaAs quantum wells considering the band nonparabolicity effects and the wavefunction elongation

The donor binding energies in finite GaAs/Ga_xAl_1 − xAs quantum wells have been calculated by considering the confinement of electrons, which increases as the well width increases. The variational solutions have been improved by using a two-parameter trial wavefunction, and by including the conduction band nonparabolicity. It is shown that the method used gives results in agreement with those obtained in the experiments on the effective mass and the donor binding energy, both of which are strongly dependent on the well width.     

Band structure of a cylindrical GaAs/AlxGa1 − xAs superwire

We investigate the existence of a band structure in GaAs/Al_xGa_1 − xsuperlattices with cylindrical symmetry, namely GaAs/Al_xGa_1 − xAs cylindrical superwires. These systems consists of a large number of concentric GaAs and Al_xGa_1 − xAs alternate cylindrical shells around a central GaAs cylindrical wire. Despite the radial configuration (that breaks the translational symmetry) and the electron confinement in the central three-dimensional well, a band structure can emerge depending on the number and thickness of the cylindrical shells.     

Electrical and mechanical properties of diluted magnetic semiconductor Zn1−xMnxS nanocrystalline films

Nanostructured Zn_1−xMn_xS films (0 ⩽ x ⩽ 0.25) were deposited on glass substrates by simple resistive thermal evaporation technique. All the films were deposited at 300 K in a vacuum of 2 × 10⁻⁶ m bar. All the films temperature dependence of resistivity revealed semiconducting behaviour of the samples. Hot probe test revealed that all the samples exhibited n-type conductivity. The nanohardness of the films ranges from 4.7 to 9.9 GPa, Young’s modulus value ranging 69.7–94.2 GPa.     

Composition and lattice mismatch dependent dielectric constants and optical phonon modes of InAs1−x−ySbxPy quaternary alloys

Based on the pseudopotential formalism under the virtual crystal approximation, the dielectric and lattice vibration properties of zinc-blende InAs_1−x−ySb_xP_y quaternary system under conditions of lattice matching and lattice mismatching to InAs substrates have been investigated. Generally, a good agreement is noticed between our results and the available experimental and theoretical data reported in the literature. The variation of all features of interest versus either the composition parameter x or the lattice mismatch percentage is found to be monotonic and almost linear. The present study provides more opportunities to get diverse high-frequency and static dielectric constants, longitudinal and transversal optical phonon modes and phonon frequency splitting by a proper choice of the composition parameters x and y (0 ⩽ x ⩽ 0.30, 0 ⩽ y ⩽ 0.69) and/or the lattice mismatch percentage.     

Characteristics of pulse plated CdxZn1−xSe films

Cd_xZn_1−xSe films (0 ⩽ x ⩽ 1) were deposited for the first time by the pulse plating technique at different duty cycles in the range 6–50% at room temperature from an aqueous bath containing zinc sulphate, cadmium sulphate and selenium oxide. To the author’s knowledge this is the first report on pulse plated Cd_xZn_1−xSe films. The deposition potential was −0.9 V (SCE). The as deposited films exhibited cubic structure. Composition of the films was estimated by Energy Dispersive Analysis of X-ray studies. X-ray photoelectron spectroscopy studies indicated the binding energies corresponding to Zn(2p_3/2), Cd(3d_5/2 and 3d_3/2) and Se(3d_5/2 and 3d_3/2). Optical band gap of the films varied from 1.72 to 2.70 eV as the composition varied from CdSe to ZnSe side. Atomic force microscopy studies indicated grain size in the range of 20–150 nm.