Atomic mixing of Ni2O3/SiO2, NiO/SiO2, and Ni/SiO2 interfaces induced by swift heavy ion irradiation

We have investigated the interface mixing of Ni₂O₃/SiO₂, NiO/SiO₂, and Ni/SiO₂ induced by the irradiation with Ar, Kr and Xe ions of energies ranging from 90 MeV to 260 MeV. Since these energies are in the electronic stopping regime, atomic transport processes will not be directly initiated by elastic ion–target collisions, but need to be excited by secondary processes like electron–phonon coupling or Coulomb explosion. Nevertheless, we have observed a strong mixing effect in the ceramic systems if the electronic energy loss exceeds a certain threshold value. Estimation of an effective diffusion constant indicates that diffusion takes place in the molten ion track. In contrast to the ceramics, the metallic Ni layer is still insensitive even for the highest electronic stopping power used (S_e=28 keV/nm) and does not exhibit mixing with its SiO₂ substrate. In addition, NiO/SiO₂ and Ni/SiO₂ were irradiated in the nuclear stopping regime with 600 keV Kr and 900 keV Xe–ions. Here the intermixing effect is in good agreement with the assumption of ballistic atomic transport. Received: 5 February 2002 / Accepted: 11 February 2002 / Published online: 3 May 2002 RID="*" ID="*"Corresponding author. Fax: +49-711/685-3866, E-mail: bolse@ifs.physik.uni-stuttgart.de     

Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching

We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 μm and subsequent selective wet chemical etching of the damaged regions by hot H₃PO₄. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1×10¹⁶ to 5×10¹⁷ He⁺/cm² and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire. Received: 14 October 2002 / Accepted: 15 October 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax +41-21/693-3701, E-mail: aurelian.crunteanustanescu@epfl.ch     

Ion-beam synthesis and growth mechanism of diamond-like materials

Opposite to most other deposition methods, the dominating nucleation and growth mechanism during ion-beam deposition of energetic ions in the range between 10 eV and 10 keV occurs in a region of a few nanometers below the surface of the growing film. This process is called ‘subplantation’ – emphasizing the implantation of ions into a subsurface region. Ordering and phase formation is a result of the interaction of the deposited ions with the solid state that takes place within the short time scale of femto- and picoseconds. This extreme non-equilibrium process can result in metastable amorphous or crystalline structures. This review will present several examples of the influence of the deposition parameters on the properties of diamond-like materials synthesized using mass-selected ion-beam deposition. Furthermore, several existing models of the deposition process will be presented and critically discussed. Received: 11 November 2002 / Accepted: 12 November 2002 / Published online: 4 April 2003 RID="*" ID="*"Corresponding author. Fax: +49-551/39-4493, E-mail: carsten.ronning@phys.uni-goettingen.de     

Femtosecond regenerative amplification in Cr:forsterite at 5–10 kHz

We developed a high-power oscillator–regenerative amplifier femtosecond laser system. Based on chromium-doped forsterite. The system is operating near 1.25 μm at a 5–10 kHz repetition rate. Chirped-pulse amplification produced 0.86 W (0.75 W) of average power, or 465 mW (400 mW) after compression at 5 kHz (10 kHz). Nearly bandwidth-limited pulses of duration 135 fs (shortest) and 150 fs (typical) are available with an energy of 93 μJ and 40 μJ at 5 and 10 kHz, respectively. Received: 7 June 2002 / Published online: 15 November 2002 RID="*" ID="*"Corresponding author. Fax: +49-30/63921289, E-mail: petrov@mbi-berlin.de     

Magnetic force microscopy applied in magnetic data storage technology

Microstructured thin-film elements with critical dimensions of 1 μm or less play an increasingly important role in magnetic components for information technology applications. Devices that are directly based on such microstructures are key components in magnetoelectronics for storage and sensor applications as well as modern concepts which are likely to substitute today’s hard disk drives. Basic research on magnetic materials as well as industrial applications create an increasing demand for high-resolution magnetic imaging methods. One such method is magnetic force microscopy (MFM). In spite of considerable achievements, MFM also has some serious shortcomings, which have not been overcome to date. Under normal circumstances, the method yields only qualitative information about the magnetic object and it is difficult to improve the resolution to values below 100 nm. In this paper, we will report on advanced MFM probe preparation, based on electron beam methods, and discuss the possibilities for batch fabrication of such advanced MFM tips. We show that the advanced probes allow high-resolution imaging of fine magnetic structures within thin-film permalloy elements without perturbing them. Additionally, we present high-frequency MFM measurements on a hard disk write head. Received: 2 September 2002 / Accepted: 2 September 2002 / Published online: 5 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-681/302-3790, E-mail: m.koblischka@mx.uni-saarland.de     

Phonon–phonon interactions due to non-linear effects in a linear ion trap

We examine in detail the theory of the intrinsic non-linearities in the dynamics of trapped ions due to the Coulomb interaction. In particular, the possibility of mode–mode coupling, which can be a source of decoherence in trapped ion quantum computation, or can be exploited for parametric down-conversion of phonons, is discussed and conditions under which such coupling is possible are derived. Received: 8 November 2002 / Published online: 26 March 2003 RID="*" ID="*"Permanent address: MIP, Université Pierre et Marie Curie and Département de Physique, école Normale Supérieure, 75005 Paris, France RID="**" ID="**"Corresponding author. Fax: +1-505/667-1931, E-mail: dfvj@lanl.gov     

Micromagnetism of two-dimensional permalloy particles with different aspect ratios

Micromagnetic properties of the Fe₁₉Ni₈₁ (5 nm)/NiO (50 nm)/Fe₁₉Ni₈₁ (30 nm) structured system have been investigated in a photoemission electron microscope in the magnetic X-ray circular dichroism operating mode. The microstructured Fe₁₉Ni₈₁ (5 nm) film contained two-dimensional islands with the aspect ratio varying from 1:1 to 10:1, and the linear size of their long axis comprised 24, 12 and 6 μm. It is shown that the magnetic domains have the direction of magnetization preferentially parallel and antiparallel to the magnetic field direction in which this system was prepared. Their number is determined by the particles’ sizes, their shape as well as by the direction of the external magnetizing field and can be characterized by a non-monotonic size dependence. The magnetization of domains with different lateral sizes was found to be 0.4 T with an accuracy better than 20%. Received: 29 May 2002 / Accepted: 17 July 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +49-6131/392-3807, E-mail: nepijko@mail.uni-mainz.de     

Differential mode delay (DMD) in graded-index multimode fiber: effect of DMD on bandwidth tuned by restricted launch conditions

The bandwidth behavior of graded-index multimode fibers (GI-MMFs) for different launching conditions is investigated to understand and characterize the effect of differential mode delay. In order to reduce the launch-power distribution the near field of a single-mode fiber is used to produce a controlled restricted launch. The baseband response is measured by observing the broadening of a narrow input pulse (time-domain measurement). The paper verifies the degradation in bandwidth due to profile distortion by scanning the spot of the single-mode fiber with a transversal offset from the center of the test sample. In addition, the impact of the launch-power distribution tuned by different spot-size diameters is demonstrated. Measurements were taken on ‘older’ 50-μm and 62.5-μm GI-MMFs as well as on laser-performance-optimized fibers more recently developed. Received: 12 November 2001 / Final version: 26 June 2002 / Published online: 25 September 2002 RID="*" ID="*"Corresponding author. Fax: +49-781/205-242, E-mail: opto@fh-offenburg.de     

Production of biologically inert Teflon thin layers on the surface of allergenic metal objects by pulsed laser deposition technology

Allergic-type diseases are current nowadays, and they are frequently caused by certain metals. We demonstrated that the metal objects can be covered by Teflon protective thin layers using a pulsed laser deposition procedure. An ArF excimer laser beam was focused onto the surface of pressed PTFE powder pellets; the applied fluences were 7.5–7.7 J/cm². Teflon films were deposited on fourteen-carat gold, silver and titanium plates. The number of ablating pulses was 10000. Post-annealing of the films was carried out in atmospheric air at oven temperatures between 320 and 500 °C. The thickness of the thin layers was around 5 μm. The prepared films were granular without heat treatment or after annealing at a temperature below 340 °C. At 360 °C a crystalline, contiguous, smooth, very compact and pinhole-free thin layer was produced; a melted and re-solidified morphology was observed above 420 °C. The adhesion strength between the Teflon films and the metal substrates was determined. This could exceed 1–4 MPa depending on the treatment temperature. It was proved that the prepared Teflon layers can be suitable for prevention of contact between the human body and allergen metals and so for avoidance of metal allergy. Received: 12 June 2002 / Accepted: 13 June 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. E-mail: bhopp@physx.u-szeged.hu     

Germania/ormosil hybrid materials derived at low temperature for photonic applications

We report on germania/organically modified silane (ormosil) hybrid materials produced by the sol–gel technique for photonic applications. Acid-catalyzed solutions of γ-glycidoxypropyltrimethoxysilane mixed with germanium isopropoxide have been used as precursors for the hybrid materials. Planar waveguide films with a thickness of about 2 μm have been prepared by a single spin-coating process and low-temperature heat treatment from these high germanium content hybrid materials. Atomic force microscopy, thermal gravimetric analysis, UV–visible spectroscopy, and Fourier-transform infrared spectroscopy have been used to investigate the optical and structural properties of the films. The results have indicated that a dense, low absorption, and high transparency (in the visible range) waveguide film could be achieved at a low temperature. A strong UV-absorption region at short wavelengths ∼200 nm, accompanied by a shoulder peaked at ∼240 nm, has been noticed due to the neutral oxygen monovacancy defects. The propagation mode and loss properties of the planar waveguide films have also been investigated by using a prism-coupling technique. Received: 5 November 2002 / Revised version: 27 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +65-67909081, E-mail: ewxque@ntu.edu.sg     

Generation of 100 μJ pulses at 82.8 nm by frequency tripling of sub-picosecond KrF laser radiation

. Investigations of the efficient generation of powerful coherent radiation at 82.8 nm by frequency tripling of short-pulse KrF laser radiation are presented. Argon gas is selected as nonlinear medium due to the resonantly enhanced 3rd-order susceptibility χ⁽³⁾(-3ω,ω,ω,ω). Pulse energies of 100 μJ at 82.8 nm have been measured for a pump pulse energy of 14 mJ. An upscaling to more than 500 μJ is expected with available more powerful pump lasers. Features of this XUV source and possible applications are discussed. Received: 26 July 2002 / Published online: 15 November 2002 RID="*" ID="*"Corresponding author. Fax: +49-511/7622211, E-mail: reinhardt@iqo.uni-hannover.de     

Wavelength-agile fiber laser using group-velocity dispersion of pulsed super-continua and application to broadband absorption spectroscopy

A swept-wavelength source is created by connecting four elements in series: a femtosecond fiber laser at 1.56 μm, a non-linear fiber, a dispersive fiber and a tunable spectral bandpass filter. The 1.56-μm pulses are converted to super-continuum (1.1–2.2 μm) pulses by the non-linear fiber, and these broadband pulses are stretched and arranged into wavelength scans by the dispersive fiber. The tunable bandpass filter is used to select a portion of the super-continuum as a scan-wavelength output. A variety of scan characteristics are possible using this approach. As an example, an output with an effective linewidth of approximately 1 cm^-1 is scanned from 1350–1550 nm every 20 ns. Compared to previous scanning benchmarks of approximately 1 nm/μs, such broad, rapid scans offer new capabilities: a gas sensing application is demonstrated by monitoring absorption bands of H₂O, CO₂, C₂H₂ and C₂H₆O at a pressure of 10 bar. Received: 5 August 2002 / Revised version: 23 September 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +1-608/265-2316, E-mail: ssanders@engr.wisc.edu     

Efficient submicron processing of metals with femtosecond UV pulses

The generation of submicron-sized holes on metal surfaces by applying femtosecond UV laser pulses was investigated. Different optical schemes based on a Schwarzschild-type reflective objective were used to reach optimized ablation quality and efficiency in different applications (hole ablation, through-hole drilling, generation of surface patterns consisting of holes, etc.). Submicron-sized holes and hole patterns were ablated onto metal surfaces and drilled through ∼5-μm-thick steel foils with 600-nm diameter on the output side. Using a special optical interferometric method, large-area surface processing of high-conductivity materials in the submicron regime was performed. Combining these techniques with the application of high-repetition-rate ultra-short UV laser sources, large-area sub-μm processing of all kinds of materials in industrial environments is possible. Received: 28 February 2002 / Accepted: 12 March 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +49-551/503599, E-mail: psimon@llg.gwdg.de     

The synthesis of highly oriented GaN nanowire arrays

Highly oriented GaN nanowire arrays have been achieved by the catalytic reaction of gallium with ammonium. The resulting materials were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM images show that the resulting materials are nanowire arrays with a uniform length of about 10 μm. XRD, EDS, TEM and SAED indicate that the nanowire arrays are single-crystal hexagonal GaN with a wurtzite structure. They have diameters of 10 to 20 nm. Received: 2 October 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. E-mail: wwwangjc@sina.com     

Efficient tunable laser operation of diode- pumped Yb,Tm:KY(WO4)2 around 1.9 μm

A new laser medium – Yb,Tm:KY(WO₄)₂ – for diode pumped solid state laser applications operating around 1.9 to 2.0 μm has been investigated and the main laser characteristics are presented. Diode pumping at 981 nm and around 805 nm was realised. For 981-nm pumping, the excitation occurs into Yb³⁺ ions followed by an energy transfer to Tm³⁺ions. A slope efficiency of 19% was realised. For pumping around 805 nm, the excitation occurs directly into the Tm³⁺ ions. Here a maximum slope efficiency of 52%, an optical efficiency of 40%, and output powers of more than 1 W were realised. Using a birefringent quartz plate as an intracavity tuning element, the tunability of the Yb,Tm:KY(WO₄)₂ laser in the spectral range of 1.85–2.0 μm has been demonstrated. The possibility of laser operation in a microchip cavity configuration for this material has also been shown. Received: 12 March 2002 / Revised version: 20 May 2002 / Published online: 25 September 2002 RID="*" ID="*"Corresponding author. Fax: +49-531/592-4116, E-mail: stefan.kueck@ptb.de     

High-peak-power diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript> laser

We report on a passively Q-switched diode-pumped Nd:YVO₄ laser polarized along the a axis (corresponding to the smallest value of emission cross section at 1064 nm), generating 157-μJ pulses with 6.0-ns time duration (>20 kW peak power) and 3.6 W of average power at 1064 nm with good beam quality (M²<1.4). The selection of the polarization was performed by a novel technique relying on the birefringence of the laser crystal and on the misalignment sensitivity of the resonator. Received: 30 September 2002 / Revised version: 22 November 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +39-382/422583, E-mail: agnesi@ele.unipv.it     

Copper nanowire arrays for infrared polarizer

A micropolarizer of copper nanowire arrays within anodic alumina membrane (AAM) was fabricated by anodization of pure Al foil and electrodeposition of Cu, respectively. X-ray diffraction, scanning electron microscopy and transmission electron microscopy investigations reveal that the ordered Cu nanowires are essentially single crystal, and have an average diameter of 90 nm. Spectrophotometer measurements show that the copper nanowire arrays embedded in AAM can only transmit polarized light vertical to the wires. An extinction ratio of 24 to 32 dB and an average insertion loss of 0.5 dB in the wavelength range of 1 to 2.2 μm were obtained, respectively. Therefore Cu nanowire/AAM can be used as a wire grid type micropolarizer. Received: 28 January 2002 / Accepted:17 May 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +86-551/559-1434, E-mail: ytpang@263.net     

Ablation with a single micropatterned KrF laser pulse: quantitative evidence of transient liquid microflow driven by the plume pressure gradient at the surface of polyesters

A microscopic flow of a transient liquid film produced by KrF laser ablation is evidenced on targets of PET and PEN. Experiments were done by using single pulses of the excimer laser beam micropatterned with the aid of submicron projection optics and grating masks. The samples of various crystalline states, ablated with a grating-forming beam (period Λ=3.7 μm), were precisely measured by atomic force microscopy, in order to evidence any deviation from the ablation behavior predicted by the current theory (combination of ablation curve and beam profile). This was confirmed by comparing various behaviors dependent on the polymer nature (PC, PET and PEN). PC is a normally ablating polymer in the sense that the ablated profile can be predicted with previous theory neglecting liquid-flow effects. This case is called ‘dry’ ablation and PC is used as a reference material. But, for some particular samples like crystalline PET, it is revealed that during ablation a film of transient liquid, composed of various components, which are discussed, can flow under the transient action of the gradient of the pressure of the ablation plume and resolidify at the border of the spot after the end of the pulse. This mechanism is further supported by a hydrodynamics theoretical model in which a laser-induced viscosity drop and the gradient of the plume pressure play an important role. The volume of displaced liquid increases with fluence (0.5 to 2 J/cm²) and satisfactory quantitative agreement is obtained with the present model. The same experiment done on the same PET polymer but prepared in the amorphous state does not show microflow, and such an amorphous sample behaves like the reference PC (‘dry’ ablation). The reasons for this surprising result are discussed. Received: 31 October 2002 / Accepted: 4 November 2002 / Published online: 22 January 2003 RID="*" ID="*"Present address: ST Microelectronics, Crolles, France RID="**" ID="**"Corresponding author. Fax: +33-556/84-6645, E-mail: s.lazare@lpcm.u-bordeaux1.fr     

Application of mid-infrared cavity-ringdown spectroscopy to trace explosives vapor detection using a broadly tunable (6–8 μm) optical parametric oscillator

A novel instrument, based on cavity-ringdown spectroscopy (CRDS), has been developed for trace gas detection. The new instrument utilizes a widely tunable optical parametric oscillator (OPO), which incorporates a zinc–germanium–phosphide (ZGP) crystal that is pumped at 2.8 μm by a 25-Hz Er,Cr:YSGG laser. The resultant mid-IR beam profile is nearly Gaussian, with energies exceeding 200 μJ/pulse between 6 and 8 μm, corresponding to a quantum conversion efficiency of approximately 35%. Vapor-phase mid-infrared spectra of common explosives (TNT, TATP, RDX, PETN and Tetryl) were acquired using the CRDS technique. Parts-per-billion concentration levels were readily detected with no sample preconcentration. A collection/flash-heating sequence was implemented in order to enhance detection limits for ambient air sampling. Detection limits as low as 75 ppt for TNT are expected, with similar concentration levels for the other explosives. Received: 1 April 2002 / Revised version: 13 June 2002 / Published online: 12 September 2002 RID="*" ID="*"Corresponding author. Fax: +1-408/524-0551, E-mail: mtodd@picarro.com     

Ultrashort-laser-pulse-driven rewritable phase-change optical recording in Sb-based films

This paper reviews the work we have carried out over the last years on the development of ultrashort-laser-pulse-driven, rewritable, phase-change optical memories. The materials we have tailored for this application are non-stoichiometric, Sb-rich amorphous thin films, which can be crystallized upon irradiation with ultrashort laser pulses, showing a large optical contrast upon transformation. This result makes them very promising for the development of rewritable phase-change optical memories under ultrashort pulses, since the reversibility of the process has also been demonstrated. Adequate control of the heat-flow conditions has allowed us to achieve a full transformation time faster than 400 ps for crystallization/amorphization using 30-ps pulses. The crystallization threshold fluence has been found to decrease upon irradiation with pulses shorter than 800 fs, thus suggesting the relevance of high-electronic-excitation-induced processes in the amorphous-to-crystalline phase transition. This has been confirmed by the observation of an ultrafast, non-thermal phase transition occurring 200–300 fs after the arrival of the laser pulse at the surface, for fluences above the crystallization threshold. The presence of this transient phase conditions the final state induced therefore enabling the applicability of this material as a rewritable recording medium using femtosecond pulses. Received: 11 October 2001 / Accepted: 9 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/564-5557, E-mail: J.Solis@io.cfmac.csic.es