Growth of ultrathin Pd films on Al(001) surfaces

High-energy ion backscattering spectroscopy (HEIS) and X-ray photoelectron spectroscopy (XPS) were used to determine the growth mode and the interface structure of ultrathin Pd films deposited on Al(001) surfaces at room temperature. Measured Al and Pd surface peak areas for MeV He⁺ ions incident normal to the surface show that Pd atoms intermix with and displace Al substrate atoms. The mixing continues for Pd coverages from 0–5 monolayers, at which point a Pd metal film begins to grow on the alloy surface. XPS measurements of the Pd 3d photopeaks show a chemical shift that is consistent with the formation of an AlPd-like compound during the mixing phase, and Pd metal thereafter. HEIS results further reveal that the alloyed overlayer as well as the Pd metal film have some degree of axial alignment with respect to the Al substrate. The XPS intensity measurements are consistent with this two-stage growth model.     

Growth mechanism of the Pd(100)-p(2×2)-p4g-Al surface alloy

We have studied the growth mechanism of a Pd(100)-p(2×2)-p4g-Al surface alloy by scanning tunneling microscopy (STM). The surface alloy has a bilayer structure and is formed by annealing at 450–700 K (depending on the initial aluminum coverage) after the deposition of aluminum on Pd(100) at room temperature. The ratio of the surface-alloy coverage to the initial aluminum coverage is found to be constant (0.44) irrespective of the initial aluminum coverage from 0.5 monolayers (ML) up to 2 ML. The growth mechanism of the surface alloy is proposed on the basis of the STM measurements at various annealing temperatures. Upon annealing at 450 K, some of the surface aluminum atoms migrate into the bulk and, instead, palladium atoms come out to the surface. These palladium atoms react with aluminum atoms remaining on the surface to form a surface alloy. When the initial aluminum coverage is less than 1 ML, bilayer-high islands of the surface alloy with an average area of 100 nm² are formed at 450–500 K, which diffuse on the terrace at 500–700 K and coalesce to form larger islands. A possible role of the percolation transition of aluminum islands in the formation of the surface alloy is discussed.     

Structure of V thin films on Al(100) using XPD,LEED, and LEIS

We have used X-ray photoelectron diffraction (XPD), low energy electron diffraction (LEED), and low energy ion scattering (LEIS) to determine the atomic structure of V thin films grown on the Al(100) single crystal surface. For V film thicknesses ranging from 0.75 ML–7 ML, the LEED patterns show no significant changes from the p(1 × 1) symmetry of a clean Al(100) surface, other than becoming more diffuse for higher V coverage. XPD and LEIS spectra indicate that during the initial deposition (1–3 ML) V atoms diffuse into the Al lattice, and tend to accumulate at the surface during subsequent deposition. Strain associated with the lattice mismatch for V and Al is likely relieved by the formation of a surface alloy during the first few ML's of V deposition. For 7 ML V coverage, XPD and LEED showed that an ordered V structure is stabilized on the Al(100) surface. Due to the close resemblance of the V and Al XPD polar scans, we conclude that V and Al are occupying similar lattice sites in tetragonally distorted bcc lattice, although the specific lattice location of the V and Al atoms is not clear.     

Al原子在Pb基底上的沉积过程研究

利用分子动力学方法模拟了Al原子在Pb基底上的沉积过程. 对Al原子在Pb基底(001)面上沉积的形态与Pb原子在Al(001)基底上沉积的形态做了比较. 由于界面间势垒的不同, 两个体系界面间的形态有明显的差异. 分析了基底温度、基底晶面指向、沉积原子的入射动能对界面间原子混合的影响. 模拟结果显示: 随着基底温度升高, 基底原子的可移动性大大增加, 与沉积原子发生较大程度的混合; 入射能的改变对界面间原子的混合影响很小; 基底表面取不同的晶格指向时, 基底与沉积原子间的混合行为也有明显的不同. 利用径向分布函数分析了沉积原子的入射能对薄膜中原子排列有序性的影响. 较高入射能对应更有序的薄膜结构; 由径向分布函数的结构可以推测Al原子在Pb(001)基底表面沉积时界面间可能有金属间化合物生成. 关键词： Pb/Al体系 沉积过程 分子动力学 入射能     

Ultra thin Al film on the W(110) surface

We have investigated the surface structure of the Al/W(110) surface using low energy electron diffraction (LEED) and low energy ion scattering spectroscopy (ISS). We observe a p(2 × 1) double domain LEED image for the 0.5 ML Al/W(110) surface at annealing temperature 850 °C. We found that 0.5 ML Al atoms cover on the W(110) surface uniformly but do not form 3 or 2-dimensional islands. We also measured the Al adsorption site at the Al/W(110)-p(2 × 1) surface using ISS. We found that Al atoms adsorbed at the center of the bridge site. The height of the adsorbed Al atoms is determined to be 2.18 ± 0.15 Å above the W surface layer.     

Photoemission study of Gd metal overlayers on a GaAs(110) surface

We have studied the chemical reactions of Gd metal on an in situ cleaved GaAs(110) surface by photoemission spectroscopy of Ga 3d and As 3d core-levels as well as the Gd 4f level on- and off-resonance valence band using synchrotron radiation. We find that the Fermi-level pinning is completed before 0.13 ML coverage, and the deposited Gd atoms start to react with the GaAs substrate at a very low coverage (critical coverage < 0.067 ML). As more Gd atoms are deposited, they form stable compounds with As atoms which are then trapped in the relatively narrow interfacial layer of thickness less than about 3.3 ML, while Ga atoms diffuse out towards the surface and eventually become metallic. The thickness of the GdGa intermixed layers is estimated to be about 6.7 ML, which is somewhat greater than that for a interface.     

Epitaxial growth of bcc Fe films on Al(1 0 0) surfaces using Ti as an interface stabilizer

An approach is described to promote epitaxial growth of thin metal films on single-crystal metal substrates by stabilizing the interface with an extremely thin metallic interlayer. A single atomic layer of a metal is deposited at the interface, Ti on Al(1 0 0) in this case, prior to the growth of the metal film of interest to produce an epitaxial interface in a system that is otherwise characterized by interdiffusion and disorder. The stabilized interface reduces interdiffusion and serves as a template for ordered film growth. Using Rutherford backscattering and channeling techniques along with low-energy electron diffraction and low-energy He⁺ scattering, it is demonstrated that an atomically thin layer of Ti metal deposited at the Fe-Al interface, a system well known for considerable intermixing at room temperature, reduces interdiffusion and promotes the epitaxial growth of Fe films on the Al(1 0 0) surface. The decrease in ion scattering yield for Al atoms, Fe-Fe shadowing and long-range order of the surface suggest that the epitaxial growth of Fe is greatly improved when the Ti interlayer is introduced prior to Fe deposition. Off-normal ion channeling experiments provide clear evidence for the bcc structure of Fe on the Ti/Al(1 0 0) template with the measured average (1 0 0) interplanar distance of 1.44 Å in the Fe overlayer.     

Asymmetric effect of (000$\bar{1}$) and (0001) facets on surface and interface properties of CdS single crystal

A different effect of (0001) and (000[`1]\bar{1}) crystal facets of the cadmium sulfide (CdS) wurtzite structure terminated with Cd and S atoms, respectively, was observed in respect to the properties of the crystal surface and interface with metal or organic semiconductor contacts. In addition to the different surface morphology, a bare CdS single crystal showed different features in photoluminescence from the Cd- and S-terminated surfaces. Different adhesive behavior of poly(3,4-ethylenedioxythiophene): poly(styrene sulfonic acid) (PEDOT:PSS) films in respect to the Cd- and S-terminated facets of the crystal has also been found. Photovoltaic properties of hybrid CdS/PEDOT:PSS heterojunctions have been shown to be sensitive in respect to the crystal facet used. Thin films of aluminum (Al) equally deposited onto the opposite crystal facets revealed much smaller sheet resistance on the sulfur facet than on the cadmium one, which has been assigned to the difference in both chemical interaction with the surface atoms and surface morphology. Current–voltage characteristics of an apparently symmetric Al/CdS/Al structure with Al electrodes deposited onto the opposite crystal facets showed asymmetric behavior depending on the bias direction applied to the Cd or S-terminated facet, with the barrier for electrons at the Al/S-terminated interface, respectively.     

Valence variations in the monolayer regime of Sm on the Nb(110) surface

Sm overlayers in the monolayer regime, deposited on a Nb(110) single-crystal surface at room temperature, have been studied by means of high-resolution photoelectron spectroscopy of the Nb 3d_5/2 core level and the Sm valence band. In the submonolayer regime, the Sm valence varies from mainly divalent for very low coverages to essentially trivalent close to a complete monolayer. Above 1 ML, a new divalent component appears in the Sm 4f spectra, corresonding to divalent Sm in the second layer. The mixed valence in this overlayer system is concluded to be heterogeneous (all Sm atoms have integer but site-dependent valence). Sm forms ordered overlayers on Nb(110) and the Sm growth is consistent with a layer-by-layer growth mode (Frank–van der Merwe growth).     

Alloy formation of Co/Ni/Pt(1 1 1)

The initial growth and alloy formation of ultrathin Co films deposited on 1 ML Ni/Pt(1 1 1) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and ultraviolet photoelectron spectroscopy (UPS). A sequence of samples of d_Co Co/1 ML Ni/Pt(1 1 1) (d_Co = 1, 2, and 3 ML) were prepared at room temperature, and then heated up to investigate the diffusion process. The Co and Ni atoms intermix at lower annealing temperature, and Co-Ni intermixing layer diffuses into the Pt substrate to form Ni-Co-Pt alloys at higher annealing temperature. The diffusion temperatures are Co coverage dependent. The evolution of UPS with annealing temperatures also shows the formation of surface alloys. Some interesting LEED patterns of 1 ML Co/1 ML Ni/Pt(1 1 1) show the formation of ordered alloys at different annealing temperature ranges. Further studies in the Curie temperature and concentration analysis, show that the ordered alloys corresponding to different LEED patterns are Ni_xCo_1−xPt and Ni_xCo_1−xPt₃. The relationship between the interface structure and magnetic properties was investigated.     

磁控溅射沉积铝/贫铀与金/贫铀镀层的界面研究

采用磁控溅射技术沉积制铝/贫铀/铝(Al/DU/Al)、金/贫铀/金(Au/DU/Au) "三明治" 薄膜样品. 利用高分辨扫描电镜、 X射线衍射仪、X射线光电子能谱仪、 扫描俄歇微探针对Al/DU/Al, Au/DU/Au样品的Al/DU, Au/DU界面行为进行表征与研究. 结果表明: 沉积态DU层以柱状晶生长; Al/DU界面扩散明显, 物理扩散过程中伴随着Al, DU化学反应形成Al₂U, Al₃U金属化合物; 金属化合物的形成导致界面处Al 2p电子结合能向高能端移动, U 4f电子向低能端移动; 微量O在Al/DU界面处以Al₂O₃及铀氧化物形式存在; DU镀层中以铀氧化形式存在; 沉积态的Au/DU界面扩散为简单的物理扩散, 团簇效应导致Au/DU界面处Al 2p, U 4f电子结合能均向高能端移动; 在Au/DU界面及DU镀层中, 微量O以铀氧化物形式存在; Al/DU界面扩散强于Au/DU; 相同厚度的Al, Au保护镀层, Al镀层保护效果优于Au镀层. 关键词： Al/DU界面 Au/DU界面 磁控溅射 界面扩散     

Adsorption of thiophene on Al(1 1 1) and deposition of aluminum on condensed thiophene

The adsorption of thiophene on clean Al(1 1 1) at 90 and 130 K has been studied with X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and work function measurements. Relatively weak chemisorption compared to adsorption on transition metals is indicated by minor changes in the valence spectrum in progressing from monolayer to multilayer thiophene, a modest work function change of −0.50 eV due to saturation dosing, and return of the work function and valence spectrum to that of clean Al(1 1 1) upon annealing at 210 K. The complementary experiment in which aluminum is thermally deposited on multilayer thiophene condensed on gold at 130 K has also been performed. XPS peak area analysis shows that metal doses less than 14×10¹⁵ atoms/cm² result in penetration through the physisorbed thiophene, but higher doses lead to the gradual build up of metal throughout the organic layer. Persistence of the thiophene UPS valence features for metal doses of 50×10¹⁵ atoms/cm² is consistent with penetration and aluminum island formation. For aluminum deposition on thiophene, charge transfer from aluminum is evidenced by metal-induced low binding energy components in the C 1s and S 2p spectra at 282.6 and 162.5 eV, respectively, and a shift in the Al 2p spectrum of 0.5 eV to higher binding energy compared to metallic aluminum. UPS also indicates progression of the frontier orbital toward the Fermi level as aluminum is deposited.     

The epitaxial growth of Fe on GaAs(110): Development of the electronic structure and interface formation

The epitaxial growth of ultra-thin Fe films on GaAs(110) at a substrate temperature of 175° C has been studied by spin-resolved and spin-integrated photoemission with synchrotron radiation. Formation and evolution of the interface region have been followed for incremental Fe coverages Θ between 0.1 and 75 ML. The ordered growth of the overlayer is accompanied by reactive intermixing for metal coverage up to 15 ML followed by further As outdiffusion. The surface is ferromagnetically ordered by 6 ML.     

Adsorption and electron properties of thin nickel films on W(110) surface

The evolution of the properties of ordered nickel films with thicknesses increasing from one to three atomic monolayers (ML) adsorbed on the W(110) single crystal surface is studied under ultrahigh vacuum conditions by the methods of reflection-absorption infrared spectroscopy (RAIRS) and ultraviolet photoelectron spectroscopy (UPS). The film structure corresponds to that of the Ni(111) single crystal face. The RAIRS technique is used to study the vibrational properties of the probing NO molecules adsorbed on the nickel films studied. In the course of the nickel film growth, whereby its thickness increases from 1 to 3 ML, both the vibrational and photoelectron spectra exhibit significant variation, which is indicative of a change in the adsorption and electron properties of the film. Stabilization of the IR and photoelectron spectra at a film thickness of 3 ML indicates that this thickness corresponds to the formation of the main adsorption and electron properties of the deposit. At the same time, the vibrational spectra of NO molecules adsorbed on a monoatomic nickel film exhibit features typical of adsorption on the W[110] surface of a massive tungsten crystal.     

AES and ELS study of gold deposition on top of hydrogen saturated Si(1 1 1) surfaces

Gold was deposited on top of hydrogen saturated Si(1 1 1) clean surfaces. The electronic nature and atomic intermixing between gold overlayer and silicon substrate were studied by AES and ELS. It is claimed that there is a critical thickness (～ 2 ML), where 1 ML = 7.8 × 10¹⁴ atoms cm^?2 for Si(1 1 1), for gold to induce alloyed metallic overlayer formation on the surface of a specimen due to intermixing reaction independently whether a surface of Si(1 1 1) substrate is saturated with hydrogen atoms or not.     

Ni ultrathin film development on SrTiO3(1 0 0) surface

The Ni ultrathin film development on the SrTiO₃(1 0 0) surface doped by Fe acceptors (0.14 wt%) has been studied by AES, LEED, TDS, EELS and relative WF measurements. Heating of the clean STO surface above 1100 K causes TiO desorption. The adsorbate grows in the simultaneous multilayers (SM) mode, approaching a rather metallic character at high coverages. The nickel adatoms in the metal–oxide interface, interact with the outmost surface oxygen atoms resulting in a two-dimensional NiO compound. The formation of this surface oxide is: (i) time dependent, (ii) temperature independent for T>300 K and (iii) promoted by the presence of surface defects. A significant amount of Ni (1.4 ML) remains on the surface, strongly chemisorbed, after high temperature annealing.     

Investigation of the interaction of evaporated aluminum with vapor deposited Teflon AF films via X-ray photoelectron spectroscopy

The interfacial bonding and mixing between evaporated aluminum and a vapor deposited Teflon AF (abbreviated to AF) film have been investigated with X-ray photoelectron spectroscopy. Graphite carbon (C–C), and aluminum carbide (Al–C), oxide (Al–O–C) and fluoride (Al–F) are formed when aluminum atoms are deposited on to the AF film. With increasing deposition of aluminum, the concentrations of these newly formed components increase gradually. Moreover, in situ annealing results in remarkable increases in the C–C, Al–C, Al–O–C and Al–F configurations and a decrease in metallic aluminum. No significant diffusion of aluminum into the AF film was observed during the annealing. The Al compounds form a layer at the Al/AF interface that acts as an adhesion promoter and diffusion barrier. Received: 21 October 2002 / Accepted: 22 October 2002 / Published online: 15 January 2003 RID="*" ID="*"Corresponding author. Fax: +49-431/880-6229, E-mail: sjding@yahoo.com     

Substrate-induced spin-orbit splitting of quantum-well and interface states in Au,Ag, and Cu layers of different thicknesses on W(110) and Mo(110) surfaces

The substrate-induced spin-orbit splitting of interface and quantum-well states formed in Au, Ag, and Cu layers on W(110) and Mo(110) surfaces has been revealed using angle- and spin-resolved photoelectron spectroscopy. It has been shown that the magnitude of the splitting depends noticeably on the atomic number of the substrate material and is markedly larger for layers of these metals on W(110), i.e., on the surface of a metal with a larger atomic number (Z _W = 74), than on the surface of Mo(110), i.e., an element with a smaller atomic number (Z _Mo = 42), while depending only weakly on the atomic number of the adsorbed metal. Measurements of the dispersion of the formed quantum-well states have shown that the substrate-induced spin-orbit splitting increases with increasing parallel component of the photoelectron momentum (which correlates with the Rashba model) for all thicknesses of deposited films (up to 10 ML). The magnitude of induced spin-orbit splitting of the interface states evolving in monolayer Au, Ag, and Cu coatings on W(110) and Mo(110) decreases with increasing parallel component of the excited photoelectron momentum.     

Surface segregation of Al substrate metal on Zr film surface

Segregation of substrate Al on thin Zr film, Zr/Al/Al system was investigated by heating the specimen in a UHV chamber. Dual-cathode magnetron-sputtering source was used for deposition of Zr film as well as thin Al film to avoid aluminum oxide formation at Zr/Al interface. Al segregates on Zr film surface at 730 K. It was found that oxide-free interface between film and substrate is important for segregation in Al system. The diffusion coefficient calculated for surface segregation and inter-metallic compound showed that the grain boundary diffusion and bulk diffusion are very close in Zr/Al/Al system. Hence, it is important to control specimen heating to cause surface segregation by grain boundary diffusion.     

Growth,electronic properties and thermal stability of the Fe/Al2O3 interface

Soft X-ray photoelectron spectroscopy and resonant photoemission have been used to study the growth and electronic properties of Fe ultrathin films deposited on Al₂O₃ substrates. A simultaneous multilayer growth mode has been found for Fe growth at room temperature. For iron coverages below 1 ML, Fe²⁺ species are formed at the Fe/Al₂O₃ interface, followed by the formation of a metallic iron overlayer. The bonding of Fe at very low coverages occurs by charge transfer from Fe to surface oxygen atoms, and neither hybridisation of Fe and Al states nor reduction of the Al₂O₃ substrate are observed. The thermal stability of the interface has been also studied in the range 673–873 K. Annealing produces Fe agglomeration in such a way that some areas of the Al₂O₃ substrate become fully Fe-depleted. In these Fe-depleted areas, Fe²⁺ completely disappears and Al⁰ reduced species are formed. This behaviour would explain the decrease in the magnetoresistance performance of magnetic tunnel junctions after annealing above 573 K.