Adsorption of oxygen and oxidation of CO on the ruthenium (001) surface

The adsorption of oxygen on the ruthenium (001) surface has been studied using a combination of techniques: LEED/Auger, Kelvin probe contact potential changes, and flash desorption mass spectrometry. Oxygen is rapidly adsorbed at 300 K, forming an ordered LEED structure having apparent (2 × 2) symmetry. Two binding states of oxygen are inferred from the abrupt change in surface work function as a function of oxygen coverage. LEED intensity measurements indicate that the oxygen layer undergoes an order-disorder transition at temperatures several hundred degrees below the onset of desorption. The order-disorder transition temperature is a function of the oxygen coverage, consistent with two binding states. A model involving the adsorption of atomic oxygen at θ < 0.5 and the formation of complexes with higher oxygen content at θ > 0.5 is proposed. The oxidation of CO to form CO₂ was found to have the maximum rate of production at a ruthenium temperature of 950 K.     

Cl chemisorption on the Pd(001) surface: A self-consistent LCAO calculation of electronic structure

The total and partial densities of states and work functions for the clean Pd(001) surface and for a c(2×2) Cl overlayer on this surface are calculated using a self consistent Gaussian LCAO technique. The adlayer increases the work function of the clean surface by 0.8 eV and leads to a distinct split off feature in the total density of states. The band structure of the bands composing this feature are compared to the bands of the isolated Cl layer.     

The process of oxygen chemisorption on the Si(111) surface

The chemisorption of oxygen on the Si(111) surface has been studied by the ASED-MO method. Three steps of the initial oxidation process have been proposed. The first step is molecular oxygen chemisorption. The second step is that of dissociated oxygen chemisorption in which the atomic short bridge site (between the first layer and second layer silicon atoms) can be occupied only after the saturation of the dangling bonds of the surface silicon with oxygen. The third step is the diffusion of atomic oxygen from the short bridge positions into the bulk of silicon to form an SiO₂ film. For molecular chemisorption, both the peroxy vertical and peroxy bridge models are possible although the peroxy vertical model is the more stable. The dissociated atomic oxygen can chemisorb for both the on-top and the short bridge models. Our results can explain, and are consistent with, most experimental results.     

Trapping-mediated chemisorption of ethylene on Si(001)-c(4 x 2)

Adsorption of ethylene molecules on Si(001)-c(4 x 2) was studied using scanning tunneling microscopy at low temperatures. Ethylene molecules trapped at the surface at 50 K were imaged only after decay to chemisorption, each bonding to a Si dimer. Atomic-scale observations of temperature-dependent kinetics show that the decay exhibited Arrhenius behavior with the reaction barrier of 128 meV in clear evidence of the trapping-mediated chemisorption, however, with an anomalously small preexponential factor of 300 Hz. Such a small prefactor is attributed to the entropic bottleneck at the transition state caused by the free-molecule-like trap state.     

The chemisorption of N2 on the (110) surface of iridium

The molecular chemisorption of N₂ on the reconstructed Ir(110)-(1 × 2) surface has been studied with thermal desorption mass spectrometry, XPS, UPS, AES, LEED and the co-adsorption of N₂ with hydrogen. Photoelectron spectroscopy shows molecular levels of N₂ at 8.0 (5σ + 1π) and 11.8 (4σ) eV in the valence band and at 399.2 eV with a satellite at 404.2 eV in the N(1s) region, where the binding energies are referenced to the Ir Fermi level. The kinetics of adsorption and desorption show that both precursor kinetics and interadsorbate interactions are important for this chemisorption system. Adsorption occurs with a constant probability of adsorption of unity up to saturation coverage (4.8 × 10¹⁴ cm^?2), and the thermal desorption spectra give rise to two peaks. The activation energy for desorption varies between 8.5 and 6.0 kcal mole^?1 at low and high coverages, respectively. Results of the co-adsorption of N₂ and hydrogen indicate that adsorbed N₂ resides in the missing-row troughs on the reconstructed surface. Nitrogen is displaced by hydrogen, and the most tightly bound state of hydrogen blocks virtually all N₂ adsorption. A p1g1(2 × 2) LEED pattern is associated with a saturated overlayer of adsorbed N₂ on Ir(110)-(1 × 2).     

Displacive surface phases formed by hydrogen chemisorption on W {001}

A detailed LEED study is reported of the surface phases stabilised by hydrogen chemisorption on W {001}, over the temperature range 170 to 400 K, correlated with absolute determinations of surface coverages and sticking probabilities. The saturation coverage at 300 K is 19(± 3) × 10¹⁴ atoms cm^?2, corresponding to a surface stoichiometry of WH₂, and the initial sticking probability for both H₂ and D₂ is 0.60 ± 0.03, independent of substrate temperature down to 170 K. Over the range 170 to 300 K six coverage-dependent temperature-independent phases are identified, and the transition coverages determined. As with the clean surface $\text{(}\text{2}\text{×}\text{2}\text{)R45°}$ displacive phase, the c(2 × 2)-H phase is inhibited by the presence of steps and impurities over large distances (～20 Å), again strongly indicative of CDW-PLD mechanisms for the formation of the H-stabilised phases. These phases are significantly more temperature stable than the clean $\text{(}\text{2}\text{×}\text{2}\text{)R45°}$, the most stable being a c(2 × 2)-H split half-order phase which is formed at domain stoichiometries between WH_0.3 and WH_0.5. LEED symmetry analysis, the dependence of half-order intensity and half-width on coverage, and I-V spectra indicate that the c(2 × 2)-H phase is a different displacive structure from that determined by Debe and King for the clean $\text{(}\text{2}\text{×}\text{2}\text{)R45°}$. LEED I-V spectra are consistent with an expansion of the surface-bulk interlayer spacing from 1.48 to 1.51 Å as the hydrogen coverage increases to ～4 × 10¹⁴ atoms cm^?2. The transition from the split half-order to a streaked half-order phase is found to be correlated with changes in a range of other physical properties previously reported for this system. As the surface stoichiometry increases from WH to WH₂ a gradual transition occurs between a phase devoid of long-range order to well-ordered (1 × 1)-H. Displacive structures are proposed for the various phases formed, based on the hypothesis that at any coverage the most stable phase is determined by the gain in stability produced by a combination of chemical bonding to form a local surface complex and electron-phonon coupling to produce a periodic lattice distortion. The sequence of commensurate, incommensurate and disordered structures are consistent with the wealth of data now available for this system. Finally, a simple structural model is suggested for the peak-splitting observed in desorption spectra.     

Dissociative nitrogen chemisorption and bonding on Gd(0001)

The electronic structure of dissociatively chemisorbed nitrogen on Gd(0001) has been studied using angle-resolved photoemission at 150 K. The symmetry of the nitrogen-induced states and bonding configuration for the initial chemisorption has been identified. Bonding occurs above the Gd(0001) surface plane via the N p_z orbital. Two possible adsorption sites are postulated, with preferential occupancy that is dependent upon coverage.     

The chemisorption and decomposition of NO on the (110) surface of iridium

The chemisorption of NO on Ir(110) has been studied with thermal desorption mass spectrometry (including isotopic exchange experiments), X-ray and UV-photoelectron spectroscopies, Auger electron spectroscopy,LEED and CPD measurements. Chemisorption of NO proceeds by precursor kinetics with the initial probability of adsorption equal to unity independent of surface temperature. Saturation coverage of molecular NO corresponds to 9.6 × 10¹⁴ cm^?2 below 300 K. Approximately 35% of the saturated layer desorbs as NO in two well separated features of equal integrated intensity in the thermal desorption spectra. The balance of the NO desorbs as N₂ and O₂ with desorption of N₂ beginning after the low-temperature peak of NO has desorbed almost completely. Molecular NO desorbs with activation energies of 23.4–28.9 and 32.5–40.1 kcal mole^?1, assuming the preexponential factor for both processes is between 10¹³–10¹⁶ s^?1. At low coverages of NO, N₂ desorbs with an activation energy of 36–45 kcal mole^?1, assuming the preexponential factor is between 10^?2 and 10 cm²s^?1. Levels at 13.5, 10.4 and 8.5 eV below the Fermi level are observed with HeI UPS, associated with the 4σ, 5σ and 1π orbitals of NO, respectively. Core levels of NO appear at 531.5 eV [O(1s)] and 400.2 eV [N(1s)], and do not shift in the presence of oxygen. Oxygen overlayers tend to stabilize chemisorbed NO as reflected in thermal desorption spectra and a downshift in the 1π level to 9.5 eV.     

Alkali adsorption on the Al(001) surface

The chemisorption of Na on the Al(001) surface has been studied by 2D bandstructure calculations on slab models using a density functional STO-LCAO method. Two slab models of three and five layers of substrate atoms have been used. Overlayers of the structuresp(2×2),c(2×2) andp(1×1), representing coverages of a quarter, a half and a full atomic monolayer of sodium atoms, respectively, have been investigated. The electronic structure of the adatoms and the charge transfer to the substrate are discussed. Satisfactory agreement with experiment is obtained for the adsorption induced change of the work function, correctly reproducing its monotonic character.     

Phosphine dissociation on the Si(001) surface

Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH3) dosing of the Si(001) surface. On the basis of a comprehensive survey of possible structures, energetics, and simulated STM images, three prominent STM features are assigned to structures containing surface bound PH2, PH, and P, respectively. Collectively, the assigned features outline for the first time a detailed mechanism of PH3 dissociation and P incorporation on Si(001).     

Electron dynamics in charged wet TiO2 anatase (001) surface functionalised by ruthenium ions

The surface of charged wet TiO₂ anatase (001) functionalised by ruthenium ion at ambient temperatures is studied by computational modelling. Response of this model to photoexcitations at ambient temperatures is explored with the Redfield density matrix equation of motion on the basis of Kohn–Sham orbitals. The parameters of the Redfield equation are on-the-fly non-adiabatic couplings for electronic degrees of freedom obtained along the ab initio molecular dynamics nuclear trajectories. The main results in this study are the following: (1) optical properties of the doped models such as light absorption intensity and transition energies can be tuned by modifying total charge; (2) electron and hole relaxation rates depend on the initial excitation; and (3) in the doped model, excitations of lower energy provide quicker relaxation. Results of computational modelling would benefit understanding of the mechanism of electron transfer processes on the surface of ruthenium-doped TiO₂.     

The GaP(001) surface and the adsorption of Cs

GaP(001) cleaned by argon-ion bombardment and annealed at 500°C showed the Ga-stabilized GaP(001)(4 × 2) structure. Only treatment in 10^?5 Torr PH₃ at 500°C gave the P-stabilized GaP(001)(1 × 2) structure. The AES peak ratio $\text{P}\text{Ga}$ is 2 for the (4 × 2) and 3.5 for the (1 × 2) structure. Cs adsorbs with a sticking probability of unity up to 5 × 10¹⁴ Cs atoms cm^?2 and a lower one at higher coverages. The photoemission measured with uv light of 3660 Å showed a maximum at the coverage of 5 × 10¹⁴ atoms cm^?2. Cs adsorbs amorphously at room temperature, but heat treatment gives ordered structures, which are thought to be reconstructed GaP(001) structures induced by Cs. The LEED patterns showed the GaP(001)(1 × 2) Cs structure formed at 180°C for 10 h with a Cs coverage of 5 × 10¹⁴ atoms cm^?2, the GaP(001)(1 × 4) Cs formed at 210°C for 10 hours with a Cs coverage of 2.7 × 10¹⁴ atoms cm^?2, the GaP(001)(7 × 1) and the high temperature GaP(001)(1 × 4), the latter two with very low Cs content. Desorption measurements show three stability regions: (a) between 25–150°C for coverages greater than 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.2 eV; (b) between 180–200°C with a coverage of 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.8 eV; (c) between 210–400°C with a coverage of 2.7 × 10¹⁴ atoms cm^?2, and an activation energy of 2.5 eV.     

The interaction of oxygen and potassium on the Ru(001) surface

The interaction of oxygen and different coverages of potassium on Ru(001) has been investigated by thermal desorption spectroscopy (TDS), metastable quenching spectroscopy (MQS), electron stimulated desorption spectroscopy (ESD), and work-function change measurements. The results show that this is a complex surface system with several different oxides forming, depending on the surface stoichiometry and temperature. While we cannot uniquely identify all the surface species, our interpretation of the present data combined with previous information is as follows. For potassium coverages up to about three monolayers (θ_K ≈ 1), exposure to oxygen initially gives oxygen atoms on the surface. Further exposure produces some surface monoxide ions O²⁻, which are converted with additional exposure to Superoxide ions O⁻₂ and possibly peroxide ions O²⁻₂. Thermal annealing causes strong changes in the surface oxide composition, and with potassium multilayers (θ_K ≈ 10) all the oxides diffuse beneath the K surface layer with annealing to only 300 K. K₂O and K₂O₂ are found to desorb together in the 600–700 K region.     

On the chemisorption of water on the (100) surface of silicon

The chemisorption of water on the (100) surface of silicon has been studied by the MNDO method in the framework of the cluster approach. Molecular chemisorption occurs preferentially at bridge positions, whereas the dissociative process leads essentially to OH (at bridge position) and H (at on-top position) chemisorbed species. The dissociative chemisorption represents the best process from a thermodynamic point of view, but involves an activation energy. As a consequence molecular chemisorption could also be observed. The formation of dihydric phases has been also investigated but is energetically unfavourable.