Terahertz absorption by electrons and confined acoustic phonons in free-standing quantum wells

The acoustic phonon confinement in a free-standing quantum well (FSQW) results in an acoustic phonon energy quantization. Typical quantization energies are in the terahertz frequency range. Free electrons may absorb electromagnetic waves in this frequency range if they emit or absorb acoustic phonons. Therefore, the terahertz absorption reveals the characteristic features of the acoustic phonon spectrum in free-standing structures. We have calculated the absorption coefficient of an electromagnetic wave by free electrons in a FSQW in the terahertz frequency range. We took into account a time dependent electric field, an exact form of the acoustic phonon spectrum and eigenmodes, and electron interactions with confined acoustic phonons through the deformation potential. We demonstrate numerical results for GaAs FSQW of width 100 Å at low lattice temperatures in the frequency range 0.1-1 THz. The absorption coefficient exhibits several structures at frequencies corresponding to the lowest acoustic phonon modes. These features occur due to absorption of photons by electrons, which is accompanied by the emission of corresponding acoustic phonons.     

Comparative study of vibrations in submonolayer structures of potassium on Pt(111)

We present results of a comparative study of the vibrational spectrum and local density of phonon states in ordered p(2 x 2) and (√3 x √3)R30° structures formed by potassium atoms on the Pt(111) surface. The calculations were performed with tight-binding interatomic interaction potentials. It was found that the mode associated with vertical displacements of K adatoms has an energy of about 20 meV in both K structures. The strength and energy of this mode slightly decreases with increasing coverage. This result is in good agreement with available experimental data. As in time-resolved second harmonic generation measurements, we observed low frequency modes for both structures considered, which are caused by the interaction of potassium with the second layer of the substrate.     

Phonon dispersion of quasi-freestanding graphene on Pt(111)

High-resolution electron energy loss spectroscopy has been used to probe phonon dispersion in quasi-freestanding graphene epitaxially grown on Pt(111). Loss spectra clearly show different dispersing features related to both acoustic and optical phonons. The present results have been compared with graphene systems which strongly interact with the substrate, i.e. the nearly-flat monolayer graphene (MLG)/Ni(111) and the corrugated MLG/Ru(0001). We found that the phonon dispersion of graphene/Pt(111) reproduces well the behavior of pristine graphite. This could be taken as an indication of the negligible interaction between the graphene sheet and the underlying Pt substrate. The softening of out-of-plane modes observed for interacting graphene/metal interfaces does not occur for the nearly-free-standing graphene/Pt(111).     

TATB晶体声子谱及比热容的第一性原理研究

利用第一性原理并结合vd W-DF2范德瓦耳斯力校正研究了TATB(C6H6O6N6)晶体声子谱及比热容.采用冷冻声子法计算了TATB晶体声子谱和声子态密度,发现在2.3 THz附近TATB声子态密度最大,证实了太赫兹光谱实验观察到的2.22 THz附近的强吸收峰.基于声子态密度研究了振动模式对比热容的贡献,分析结果表明,常温下0—27.5 THz频段振动模式贡献了比热容的93.7%.同时比较了升温过程中振动模式对比热容的贡献,指出TATB热分解的引发键是C—NO_2键断裂的可能性更大.     

Phonon States and Dispersive Spectra of Polar Optical Phonons in Quasi-One-Dimensional Nanowires of Wurtzite ZnO and Zinc-Blend MgO Semiconductors

Within the framework of the macroscopic dielectric continuum model and Loudon's uniaxial crystal model, the phonon modes of a wurtzite/zinc-blende one-dimensional (1D) cylindrical nanowire (NW) are derived and studied. The analytical phonon states of phonon modes are given. It is found that there exist two types of polar phonon modes, i.e. interface optical (IO) phonon modes and the quasi-confined (QC) phonon modes existing in 1D wurtzite/zinc-blende NWs. Via the standard procedure of field quantization, the Fröhlich electron-phonon interaction Hamiltonians are obtained. Numerical calculations of dispersive behavior of these phonon modes on a wurtzite/zinc-blende ZnO/MgO NW are performed. The frequency ranges of the IO and QC phonon modes of the ZnO/MgO NWs are analyzed and discussed. It is found that the IO modes only exist in one frequency range, while QC modes may appear in three frequency ranges. The dispersive properties of the IO and QC modes on the free wave-number k_z and the azimuthal quantum number m arediscussed. The analytical Hamiltonians of electron-phonon interaction obtained here are quite useful for further investigating phonon influence on optoelectronics properties of wurtzite/zinc-blende 1D NW structures.     

Inelastic neutron scattering an ab-initio calculation of negative thermal expansion in Ag2O

The compound Ag₂O undergoes large and isotropic negative thermal expansion over 0–500 K. We report temperature dependent inelastic neutron scattering measurements and ab-initio calculations of the phonon spectrum. The temperature dependence of the experimental phonon spectrum shows strong anharmonic nature of phonon modes of energy around 2.4 meV. The ab-initio calculations reveal that the maximum negative Grüneisen parameter, which is a measure of the relevant anharmonicity, occurs for the transverse phonon modes that involve bending motions of the Ag₄O tetrahedra. The thermal expansion is evaluated from the ab-initio calculation of the pressure dependence of the phonon modes, and found in good agreement with available experimental data.     

High-resolution phonon study of the Ag(100) surface

Using high-resolution electron energy loss spectroscopy the phonon dispersion of Ag(100) has been studied at two different sample temperatures of 86 and 300 K. The dominant feature in the spectra corresponds to the Rayleigh wave. Its full dispersion is determined along the ΓX high symmetry direction in the first and second Brillouin zones. The Rayleigh phonon maximum at the X point shows a redshift with increasing temperature. This is explained based on a surface anharmonicity with an anharmonicity constant of 0.014, comparable to the value reported for Cu(100). In the vicinity of the Γ point two additional phonon features have been discovered at about 110 and 160 cm(-1), which are tentatively assigned to high density of states features from the bulk phonon bands. However, the observed steep dispersion is in contrast to theoretical calculations. Along ΓX two surface resonance branches have been observed with maximum frequencies in the range of 90-110 cm(-1) near to the zone boundary. These branches agree with helium atom scattering data where available, but are not predicted by theory.     

Shift and broadening of adsorbate vibrational modes

The shift and broadening of the vibrational frequency of the adsorbate on a metal surface are calculated on the basis of two different models. The first model is an anharmonic one which includes multiphonon processes to all order in first-order perturbation theory. We show that anharmonic damping due to multiphonon processes is substantial for CO adsorbed on a Ni(100) surface and small for H adsorbed on a W(100) surface. At room temperature multiphonon processes with n > 2 are very important even in cases when the frequency of vibration of the adsorbate lies below twice the maximum phonon frequency of the substrate (n is the order of the process). For the CNi stretching mode of top-bonded CO on Ni(100) our results are in accord with the experimental data. The second model is an electronic one which includes the electron-hole pair loss mechanism. We show that the observed shift and broadening of the CO stretching vibration mode for a CO molecule adsorbed on Cu(100) and for a H atom adsorbed on a W(100) surface can be explained on the basis of this model. Variation of the shift and broadening of the CO stretching mode with the distance from a CO molecule to Ni(111) surface are calculated.     

Deformation resonance approach to adsorbate induced relaxation

Adsorbate induced modifications of the surface lattice dynamics are of particular interest with respect to surface reconstruction and relaxation. We report on a theoretical attempt of disclosing the microscopic mechanism of an adsorbate driven change of the surface geometry in the early stages of adsorption. The theoretical framework is the deformation resonance approach (DRA), which has been developed for the investigation of inelastic gas - surface interactions. The adsorbate - phonon interaction is of short range and therefore treated in a localized basis set. The local deformation of the surface in the environment of the adsorbed particle is calculated self-consistently using quantum mechanics. Qualitative aspects of the correlated adsorbate - substrate motion are discussed paying special attention to the possibility of adsorbate induced soft phonon modes.The method is applied to studying the interaction of a hydrogen atom with the nickel (110) - surface. The three-dimensional static potential energy surface including the first and second derivatives with respect to the substrate atom displacements has been evaluated using a sophisticated electronic model Hamiltonian. Many - body forces lead to a modification of the coupling between substrate atoms as compared to the clean surface. The metal atoms relax from their original equilibrium positions in order to minimize the total ground state energy of the interacting system. This behaviour is discussed as a possible driving force for the hydrogen induced reconstruction.     

Semiempirical model calculations for chemisorption on transition metals: III. CO,N2 and NO on Ni,Cu, Pd and Ag

An effective one electron Hamiltonian is used to calculate the qualitative behaviour of various physical quantities (adsorption energy, shifts of ionization energies, energy profiles, etc.) over a series of different adsorption systems. The numerical calculations allow for several orbitals on the adsorbed particle as well as for the s- and the d-and in the metal. The experimentally found trends concerning the general features of photoelectron spectra and the variation of the adsorption energy with adsorbate and substrate as well as with the surface orientation and the location of the adsorbed species are reproduced reasonably well. A simple theory of photoemission (the final state is a plane wave) has been combined with the semiempirical calculations. The generally observed decrease of emission from the d-band region can be understood as an interference effect in the initial state.     

A quantum field theory of localized and resonant modes in 3D nonlinear lattices at finite temperatures II

We solve the eigenvalue equation derived in paper I under the assumption that a localized or resonant mode is well-localized at a lattice site. Localized modes appear above the top of the phonon band for an appropriate positive quartic potential at any temperatures. Resonant modes appear in the middle of the phonon band for an appropriate negative quartic potential at low temperatures due to the frequency dependent coupling of the mode. This fact is essentially different from that in the force constant defect, where resonant modes appear in the lower frequency regions due to the frequency independent couplings. Both modes are investigated numerically using the tables of the Green's functions for monoatomic simple cubic lattices in terms of the Bessel functions. Resonant modes are also investigated in the Debye approximation.     

Intervalley Γ- X Deformation Potentials in Ⅲ-V Zincblende and Si Semiconductors by Ab Initio Pseudopotential Calculations

Intervalley Γ- X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the Ⅲ-V zincblende semiconductors Alp, AlAs, AlSb, Gap, GaAs, GaSb, InP, ZnAs and ZnSb. As a pro to type crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for Gap, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for Gap, InP and ZnAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting Γ- X intervalley shatteri'ngs for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.     

Polar optical phonon states and dispersive spectra of wurtzite ZnO nanocrystals embedded in zinc-blende MgO matrix

Based on the macroscopic dielectric continuum model and Loudon’s uniaxial crystal model, the polar optical phonon modes of a quasi-0-dimensional (Q0D) wurtzite spherical nanocrystal embedded in zinc-blende dielectric matrix are derived and studied. It is found that there are two types of polar phonon modes, i.e. interface optical (IO) phonon modes and the quasi-confined (QC) phonon modes coexisting in Q0D wurtzite ZnO nanocrystal embedded in zinc-blende MgO matrix. Via solving Laplace equations under spheroidal and spherical coordinates, the unified and analytical phonon states and dispersive equations of IO and QC modes are derived. Numerical calculations on a wurtzite/zinc-blende ZnO/MgO nanocrystal are performed. The frequency ranges of the IO and QC phonon modes of the ZnO/MgO nanocrystals are analyzed and discussed. It is found that the IO modes only exist in one frequency range, while QC modes may appear in three frequency ranges. The dispersive frequencies of IO and QC modes are the discrete functions of orbital quantum numbers l and azimuthal quantum numbers m. Moreover, a pair of given l and m corresponds to one IO mode, but to more than one branches of QC. The analytical phonon states and dispersive equations obtained here are quite useful for further investigating Raman spectra of phonons and other relative properties of wurtzite/zinc-blende Q0D nanocrystal structures.     

Surface vibrations on clean and hydrogen saturated W(100)

Electron energy loss Spectroscopy (EELS) and lattice dynamical calculations are used to investigate the vibrational properties of surface phonons and adsorbate phonons on clean and hydrogen-saturated W(100). Two distinct intrinsic surface vibrations are observed in specular scattering geometry. One of the surface modes is attributed to a surface resonance of a bulk longitudinal phonon at the hydrogen-stabilized (1×1) surface. The second surface mode occurs only on the low-temperature-stabilized c(2×2) [011] displacement surface. Detailed experimental studies and lattice dynamical analysis of the hydrogen-saturated W(100) surface account for a new hydrogen-derived loss peak at 118 meV in terms of an optic mode of the adsorbed layer. Experimental evidence of impact scattering resonances under certain kinematic conditions are observed.     

Spin-P honon Renormalization of the Excitation Energy in a Diluted Two-Dimensional Ferromagnet

The contribution of spin-lattice coupling to the phonon self-energy is calculated for a diluted two-dimensional "soft" ferromagnet. The calculations are based on a bond percolation model. Numerical results are presented for the dampings of phonon excitations. At low temperature, the damping rate is much smaller than the frequency of excitations, leading to well-defined phonons. The overall features of the Г ( q ) curves possess similar characteristics: Г ( q ) has two maximum points at qa ≈ 0.5 and qa ≈ 1.7, the value of the latter is much larger than the former. The temperature-dependent phonon line widths arising from spinlattice coupling are also presented. We point out the sensitivity of the interaction on bond concentration of the network.     

Ab initio calculation of local vibrational modes by the Green’s function method. Application to GaAs:C and GaN:As

We present an ab initio technique for the calculation of vibrational modes at deep defects in semiconductors outside and inside the host-phonon bands. The dynamical matrix is calculated using density-functional theory in the local density approximation. In the results presented here all interatomic harmonic forces up to the eleventh nearest neighbour of a particular atom of the perturbed or unperturbed crystal are included. The Green's function method is used to obtain the difference of the density of phonon states between the perturbed and the perfect crystal. This technique is applied to calculate the split-off mode at the C impurity at As site in GaAs and its isotope shifts, which are in good agreement with Raman scattering experiments. It is demonstrated that the impurities generate resonances and localized modes inside the host-phonon bands. The resonances arise at specific energies of the density of phonon states of the perfect crystal which are practically independent of the chemical nature of the defect, whereas the localized modes show distinct impurity or ligand isotope shifts. Our calculations of GaAs and cubic GaN lead to the assignment of a number of low energy Raman-scattering peaks between 7.2 meV and 31.0 meV, observed at a layer of cubic GaN on a GaAs substrate, to resonances inside the phonon bands of GaAs and GaN. Received 5 March 1999     

Variational treatment for the dynamical pseudo Jahn-Teller system

We present a variational treatment for the E × e pseudo Jahn-Teller system. Through canonical transformation the electron and phonon states are decoupled. An analytical form is obtained for the ground state energy by scaling transformation. Including both the dynamical displacement of phonon modes and the softening of phonon frequency, this approach yields fairly accurate results for the ground state energy. The energy splitting and Ham's reduction factor are calculated, which also generates fairly good results compared with other perturbation results. We argue that our variational wave function is valid for the weak and intermediate coupling range.     

Frequency average loss factors of plates and shells

This paper describes a thorough investigation of the measurement of frequency band average loss factors of structural components for use in the statistical energy analysis (SEA) method of computation of vibration levels. The “traditional” method of measurement is to excite the structure by a random force having a flat spectral density in the frequency band of interest. The force is then cut off and the decay of the modes excited in the band is noted. The average loss factor is deduced from the decay curve. The alternative energy method is the subject of this study. In this test the power input from the band limited random force is measured and the spatial average vibration level of the structure is estimated from several surface accelerometers. It is shown that when the modes in the band have similar loss factors (as is usually the case) the energy method gives a result which is very close to that obtained from the decay method. These in turn are close to the arithmetic average of the loss factors of the individual modes in the band. It is shown that only when the band contains one or two very lightly damped modes amongst several more heavily damped modes is there a difference between the two methods. In this case it is better to use the energy result in the SEA calculations.     

Temperature and layer number dependence of the G and 2D phonon energy and damping in graphene

We have studied the temperature and size dependence of the G and 2D phonon modes in graphene. It is shown that in a graphene monolayer the phonon energy decreases whereas the phonon damping increases with increasing temperature. The electron-phonon interaction leads to hardening whereas the fourth-order anharmonic phonon-phonon processes lead to softening of the phonon energy with increasing temperature. We have shown that the electron-phonon interaction plays an important role also by the dispersion dependence of the phonon G mode, by the observation of the Kohn anomaly. The G mode frequency decreases and damping increases, whereas the 2D phonon frequency and damping increase with increasing layer number. The temperature and size effects of the 2D mode are much stronger than those of the G mode.     

GaN直纳米线的光学性能

对 Ga N直纳米线的拉曼光谱及光致发光光谱进行了研究。拉曼光谱表明 ,与计算值相比 ,E2 ( high)声子频率在 560 cm- 1有 -9cm- 1的移动 ,这种声子频率显示出向低能带频移及带变宽的特征 ,是由于纳米尺寸效应所引起的结果。体系的光致发光光谱在 3 44 .8nm附近的近带隙发光 ,与文献报道的 Ga N体材料的数值3 65nm相比有一蓝移 ,这是由于量子限制效应造成的