硅表面抗反射纳米周期阵列结构的纳米压印制备与性能研究

硅表面固有的菲涅耳反射, 使得硅基半导体光电器件(如太阳能电池、红外探测器)表面有30%以上的入射光因反射而损失掉, 严重影响着器件的光电转换效率. 寻找一种方法降低硅基表面的反射率, 进而提高器件的效率成为近年来研究的重点.本文基于纳米压印光刻技术, 在2 英寸单晶硅表面制备出周期530 nm, 高240 nm的二维六角截顶抛面纳米柱阵列结构. 反射率的测试表明, 当入射光角度为8° 时, 有纳米结构的硅片相对于无纳米 结构的硅片来讲, 在400到2500 nm波长范围内的反射率有很明显的降低, 其中, 800到2000 nm波段的反射率都小于10%, 在波长1360 nm附近的反射率由31%降低为零. 结合等效介质理论和严格耦合波理论对结果进行了分析和验证. 关键词： 纳米压印 截顶抛物面阵列 抗反射 等效介质理论     

纳米压印技术制备表面光子晶体LED的研究

利用表面光子晶体能大幅提高发光二极管(LED)的外量子效率, 但如何制备大面积的纳米光子晶体是该研究方向的主要难点之一. 本文基于纳米压印技术在氮化镓基发光二极管(GaN-LED)表面制作孔状二维光子晶体. 通过以金属和聚合物双层掩膜干法刻蚀法, 得到了很好的光子晶体图形转移效果. 最终在LED的p-GaN层表面获得了大面积光子晶体, 周期为450 nm, 纳米孔直径为240 nm. 器件测试结果显示, 有表面光子晶体的LED比没有光子晶体的LED, 光致发光强度峰值提高到了7.2倍.     

基于Mueller矩阵椭偏仪的纳米压印模板与光刻胶光栅结构准确测量

在纳米压印工艺中,对模板和压印结构的几何参数进行快速、低成本、非破坏性地准确测量具有非常重要的意义.与传统光谱椭偏仪只能改变波长和入射角2个测量条件并且在每一组测量条件下只能获得振幅比和相位差2个测量参数相比,Mueller矩阵椭偏仪可以改变波长、入射角和方位角3个测量条件,而且在每一组测量条件下都可以获得一个4×4阶Mueller矩阵共16个参数,因此可以获得更为丰富的测量信息.通过选择合适的测量条件配置,充分利用Mueller矩阵中的测量信息,有望实现更为准确的纳米结构测量.基于此,本文利用自主研制的Mueller矩阵椭偏仪对硅基光栅模板和纳米压印光刻胶光栅结构进行了测量.实验结果表明,通过对Mueller矩阵椭偏仪进行测量条件优化配置,并且在光学特性建模时考虑测量过程中出现的退偏效应,可以实现压印工艺中纳米结构线宽、线高、侧壁角以及残胶厚度等几何参数更为准确的测量,同时对于纳米压印光刻胶光栅结构还可以直接得到光斑照射区域内残胶厚度的不均匀性参数.     

FIB快速加工纳米孔点阵的新方法

纳米尺度的点阵在纳米器件和基础科学研究方面都具有非常重要的应用.目前普遍采用的聚焦离子束和电子束曝光技术可以很方便的在衬底上加工纳米量级的微细结构，但大面积的图形加工过程需要花费太多的机时.介绍一种利用设计图形BMP文件的像素点阵和实际加工区域之间的匹配关系，通过聚焦离子束加工获得所需要的纳米孔点阵的新方法.采用这种方法可以在短时间内获得大面积的纳米点阵结构. 关键词： 聚焦离子束 电子束曝光 纳米孔点阵     

振动辅助纳米压印制备大面积光栅结构北大核心CSCD

为了解决纳米压印过程中填充率低下,压印图案易发生形变等问题,提出了一种新型振动辅助纳米压印方法。在压印过程中对压印胶施加横向的振动,增大了压印力,从而提高了填充率。运用时域有限差分法(finite difference time domain,FDTD),在波长300 nm~1000 nm范围内,数值模拟了不同光栅结构,得到了光栅结构参数变化对其吸收率的影响规律。在振动辅助装置上进行振动辅助纳米压印实验,实验结果表明:与传统纳米压印技术相比,压印胶的填充率提高了30%,并改善了压印后微结构的表面形貌,减少了缺陷。     

纳米压印多孔硅模板的研究

纳米压印模板通常采用极紫外光刻、聚焦离子束光刻和电子束光刻等传统光刻技术制备,成本较高.寻找一种简单、低成本的纳米压印模板制备方法以提升纳米压印光刻技术的应用成为研究的重点与难点.本文以多孔氧化铝为母模板,采用纳米压印光刻技术对纳米多孔硅模板的制备进行了研究.在硅基表面成功制备出纳米多孔阵列结构,孔间距为350—560 nm,孔径在170—480 nm,孔深为200 nm.在激发波长为514 nm时,拉曼光谱的测试结果表明,相对于单面抛光的硅片,纳米多孔结构的硅模板拉曼光强有了约12倍左右的提升,对提升硅基光电器件的应用具有重要的意义.最后,利用多孔硅模板作为纳米压印母模板,通过热压印技术,成功制备出了聚合物纳米柱软模板.     

假塑性流体纳米压印中影响填充度的因素

作为新一代的半导体加工工艺, 直接金属纳米压印以其步骤简单、成本低等显著优点得到迅速的发展. 然而目前纳米压印中所采用的转移介质在流动状态下为牛顿流体, 牛顿流体的黏度是一个常量, 而假塑性流体具有黏度随着剪切速率的增大而逐渐减小的趋势, 更适用于纳米压印. 综合假塑性流体的剪切稀化特性以及直接金属图形转移的优点, 将不同大小的金属纳米粒子分散在基液中制成假塑性金属纳米流体并将其作为转移介质用于纳米压印中. 基于假塑性流体的Carreau流变模型利用COMSOL软件仿真分析金属纳米粒子假塑性流体参数集对图形压印转移的影响, 完成假塑性流体与牛顿流体分别作为转移介质实现图形转移的对比分析. 同时还得到了压印过程中影响填充度的各个因素, 如流体黏度、施加压强、掩模板移动速度等. 研究工作为金属纳米粒子假塑性流体制备以及纳米压印流程的设计提供了理论基础. 关键词： 纳米压印 假塑性流体 填充度     

基于纳米压印的大角度衍射光学元件批量化制备方法

针对大角度(大于50°)衍射光学元件低成本、批量化制备的需求,提出一种基于纳米压印技术的制备方法.首先利用光学曝光技术或电子束直写技术制备衍射元件的原始母板,然后将原始母板的结构通过纳米压印过程复制到压印胶上,完成衍射光学元件的制备.由于纳米压印母板可以多次重复使用,降低了制作成本,提高了效率.用该方法制备了不同特征尺寸(最小为250nm,衍射全角为70°)的衍射光学元件,具有良好的衍射效果,实现了对高深宽比浮雕结构的高保真复制.该技术可实现从微米到纳米跨尺度兼容的衍射光学元件的高保真、低成本、批量化制备.     

Preparation of a novel ferrofluidic photoresist for two-photon photopolymerization technique

We present a novel route for the preparation of ferrofluidic photoresist compatible with two-photon photopolymerization (TPP). To get a homogeneous ferrofluidic photoresit, the compatibility of photoresist and magnetic materials has been improved. Monodispersed Fe₃O₄ nanoparticles synthesized via thermal decomposition of iron precursor were stabilized by 6-(methacryloyloxy) hexanoic acid (a kind of acrylate-based monomer). A ferrofluidic photoresist was prepared by doping the modified Fe₃O₄ nanoparticles in acrylate-based resin. In this way, the dispersibility of nanoparticles in photoresist was enhanced significantly. As a representative example, a precise magnetic micron-sized spring was created. In the test of the magnetic response, the sensitivity of magnetic microspring was improved remarkably due to the optimization of the ferrofluidic photoresist. When the intensity of external magnetic field reached a value of 1500 Gs, the deformation rate of the microspring would get to 2.25, indicating the compatibility of the ferrofluidic photoresist in microfabrication.     

聚焦离子束研制半导体材料光子晶体

介绍了利用聚焦离子束设备在多种半导体材料上成功研制的近红外波段二维光子晶体，给出了相关微加工结果，发现微加工的尺寸和理论设计尺寸相吻合；测试了所加工的无源光子晶体光子带隙和有源光子晶体的发光谱. 实验证明聚焦离子束可以研制二维光子晶体及相关光子晶体器件. 关键词： 聚焦离子束 半导体材料 光子晶体     

半导体量子阱材料微加工光子晶体的光学特性

利用聚焦离子束刻蚀方法和电子束制版结合干法刻蚀方法制备了二维近红外波段光子晶体，发现两种方法都可以制备出均匀的二维光子晶体，聚焦离子束方法操作简单，电子束制版结合干法刻蚀方法操作步骤复杂.光谱测试表明，利用聚焦离子束方法在有源材料上刻蚀的光子晶体不发光，而电子束制版结合干法刻蚀方法制备的小晶格常数光子晶体即使有些无序，其出光效率也提高到没有光子晶体时的两倍.对两种方法所加工的光子晶体不发光和提高出光效率的机理进行了分析. 关键词： 聚焦离子束 电子束制版 光子晶体 出光效率     

Geometrical characterization techniques for microlens made by thermal reflow of photoresist cylinder

Microlens characterization is a prerequisite for improving fabrication process, and for satisfying the end user needs. In this paper we explore techniques to characterize geometrical properties of microlens made by thermal reflow: viz. microlens profile; radius of curvature; microlens height; contact angle and focal length. The geometrical characterization is done using techniques such as contact profilometry, scanning electron microscopy (SEM), optical microscopy, white light confocal microscopy and fluorescence confocal microscopy. All the above techniques are studied and compared, keeping in mind the characterization requirements of polymer microlens made by thermal reflow technique.     

离子束刻蚀软X射线透射光栅实验研究

利用全息-离子束刻蚀方法研制出了聚酰亚胺薄膜为衬底的金软X射线透射光栅.研究了光栅制作中曝光量、显影条件和离子束刻蚀工艺等因素对光栅参数的影响,并给出了在惯性约束激光核聚变实验研究中的应用结果,     

Optimum design of photoresist thickness for 90-nm critical dimension based on ArF laser lithography

In this work,a 90-nm critical dimension(CD) technological process in an ArF laser lithography system is simulated,and the swing curves of the CD linewidth changing with photoresist thickness are obtained in the absence and presence of bottom antireflection coating(BARC).By analysing the simulation result,it can be found that in the absence of BARC the CD swing curve effect is much bigger than that in the presence of BARC.So,the BARC should be needed for the 90-nm CD manufacture.The optimum resist thickness for 90-nm CD in the presence of BARC is obtained,and the optimizing process in this work can be used for reference in practice.     

Focused ion beam treatment of ZnO nanowires in the scanning electron microscope

We investigated vapor phase epitaxy-grown ZnO nanowires on a Si substrate by scanning electron microscopy. These investigations show that there are single nanowires and ensembles of nanowires, among which we found straight and bend, perfect and non-perfect nanowires, as well as nanowires with clean surfaces and surfaces with the dark spots and features. After focused ion beam polishing and milling we found that nanowires are homogeneous. The sizes of the nanowires were determined: the length is about 2–24 μm, and the width and height are about 200–500 nm.     

Analysis of absorption enhancement in tailor‐made periodic polycrystalline silicon microarrays

We present a design study of 3D photonic poly‐Si microarchitectures on 2 µm periodically textured glass substrates for application as absorber layers in crystalline Si thin‐film solar cells. Different arrays of microholes and microcones were fabricated in a low‐cost process, by combining high rate electron beam evaporation, nanoimprint technology and self‐organized solid phase crystallization. Two promising designs exhibiting strong absorption enhancement were identified by optical analysis. High angular acceptance and calculated maximum achievable short‐circuit current density of 27.6 mA/cm² for an effective Si thickness of 1.1 µm highlight the optical potential of these microarchitectures as broadband absorbers in polycrystalline Si thin‐film solar cells.

     

Estimation of diffusion coefficient by photoemission electron microscopy in ion-implanted nanostructures

We have fabricated parallel stripes of nanostructures in an n-type Si substrate by implanting 30 keV Ga⁺ ions from a focused ion beam (FIB) source. Two sets of implantation were carried out. In one case, during implantation the substrate was held at room temperature and in the other case at 400 °C. Photoemission electron microscopy (PEEM) was carried out on these samples. The implanted parallel stripes, each with a nominal dimension of 4000 nm × 100 nm, appear as bright regions in the PEEM image. Line scans of the intensities from the PEEM image were recorded along and across these stripes. The intensity profile at the edges of a line scan is broader for the implantation carried out at 400 °C compared to room temperature. From the analysis of this intensity profile, the lateral diffusion coefficient of Ga in silicon was estimated assuming that the PEEM intensity is proportional to Ga concentration. The diffusion coefficient at 400 °C has been estimated to be ∼1.3 × 10⁻¹⁵ m²/s. Across the stripes an asymmetric diffusion profile has been observed, which has been related to the sequence of implantation of these stripes and the associated defect distribution due to lateral straggling of the implanted ions.