Dynamics of localized excitons in a superlattice grown by molecular-beam epitaxy with submonolayers of CdSe

The low-temperature photoluminescence spectrum and the recombination dynamics of localized excitons have been studied in a short-period superlattice of CdSe/ZnSe submonolayers. As distinct from structures with isolated submonolayers, which exhibit one narrow photoluminescence peak, the photoluminescence and photoluminescence excitation spectra of a superlattice have two peaks, separated by ∼50 meV. The amount of splitting, as well as the temporal characteristics of the damping of the photoluminescence, are interpreted in terms of a model of a disordered superlattice of extended islands, sited randomly in the submonolayers making up the superlattice. Fiz. Tverd. Tela (St. Petersburg) 40, 837–838 (May 1998)     

Molecular layering of 2D films and superlattices based on II–VI compounds

The method of molecular layering is used to prepare CdS thin films and CdS/ZnS and CdS/CdSe superlattices. The dependence of the exciton photoluminescence on film thickness is studied, and the role of internal strains is examined. The effect of the excitation intensity on the superlattice photoluminescence spectra is examined, manifested in a shift of the emission maximum toward shorter wavelengths when this intensity is increased. Fiz. Tverd. Tela (St. Petersburg) 40, 820–821 (May 1998)     

Hot photoluminescence spectroscopy: Investigation of two-dimensional structures

Studies of the secondary luminescence (Raman scattering and hot photoluminescence) in low-dimensional semiconductor structures are reviewed. Fiz. Tverd. Tela (St. Petersburg) 41, 785–788 (May 1999)     

Features of the resonant interaction of moving neutral atoms and clusters with superlattice surface

Features of the interaction of moving neutral atoms, molecules, and clusters with a superlattice field (for example, the system of linear magnetic and electric domains) are considered. It is shown that the character of the particle motion depends on the ratio of the frequency ω₂₁ of the internal electromagnetic resonance to the bounce frequency Ω _s determined by the superlattice period, the velocity of the particle motion, and the possible moments of the particle in the ground d ₁₁ and excited d ₂₂ states. The conditions for regimes of attraction and repulsion of particles by the superlattice are considered. The preconditions for formation of a one-dimensional potential well located far from the superlattice and for stable channeling of neutral and charged particles in this well are also considered. Depending on the ratio of ω₂₁ to Ω _s , particle sorting and beam separation occur during interaction of the multicomponent beam consisting of different particles with the superlattice field.     

Influence of the external deformation on the polarization of hot photoluminescence of the acceptor-conduction band in cubic semiconductors

The uniaxial deformation, varying the wave functions and energies of acceptor sublevels, leads to an essential change in the polarization of hot photoluminescence in semiconductors. The polarization characteristics of photoluminescence caused by recombination of hot and thermalized electrons with the holes bound at shallow-level acceptors with the simultaneous effect of the external magnetic field and uniaxial deformation have been calculated. It has been shown that the comparison of theoretical and experimental results will make it possible to refine some parameters of impurities in crystals.     

Mg掺杂的AlxGa1-xN/GaN超晶格紫外峰的性质

观测了不同Mg含量的Al_xGa_1-xN/GaN超晶格(SLs)样品在不同退火温度和激发强度下的光致发光(PL)光谱。结合霍尔测量,分析了其紫外发射(UVL)峰的起源及相关影响因素。实验发现:同一样品在N₂气氛中高温退火,UVL峰强随退火温度的升高,先增至饱和继而急剧下降,峰位红移;而在相同退火条件下,随着掺杂Mg的流量增加,样品空穴浓度下降,峰强减弱,峰位红移。结果表明:UVL峰是来自于易热分解的浅施主(V_NH)与浅受主(Mg_Ga)之间的跃迁,并受到深施主(Mg_GaV_N)与浅受主(Mg_Ga)自补偿效应的影响。实验上随着PL光谱激发强度的增强,UVL峰位约有260 meV的蓝移,结合超晶格极化场下的能带模型分析,认为这是极化效应导致的锯齿状能带中,V_NH与Mg_Ga之间跃迁方式的改变引起的现象。     

Donor-acceptor recombination in type-II GaAs/AlAs superlattices

A study is reported of steady-and nonsteady-state photoluminescence of intentionally undoped and uniformly silicon-doped type-II (GaAs)₇(AlAs)₉ superlattices grown by MBE simultaneously on (311)A-and (100)-oriented GaAs substrates. It has been established that at elevated temperatures (160>T>30 K) the superlattice spectra are dominated by the line due to the donor-acceptor recombination between donors in the AlAs layers and acceptors located in the GaAs layers. The total carrier binding energy to the donor and acceptor in a pair has been determined. Fiz. Tverd. Tela (St. Petersburg) 40, 1734–1739 (September 1998)     

Resonant optical orientation and alignment of excitons in superlattices

Exciton states in short-period GaAs/AlGaAs superlattices have been studied by optical orientation and optical dipole-moment alignment methods. The effect of magnetic field in the Faraday and Voigt geometries on the degree of linear and circular polarization of photoluminescence have been studied under resonant and nonresonant excitation. The constants of electron-hole exchange interaction in the exciton have been determined. Fiz. Tverd. Tela (St. Petersburg) 40, 2229–2235 (December 1998)     

Anisotropy of cubic semimagnetic Cd1−x MnxTe solid solutions and excitonic magnetic polaron energy from polarized-luminescence measurements

Polarized photoluminescence of Cd_1−x Mn_xTe crystals in a weak magnetic field has been studied in Faraday and Voigt geometries. A simple method is proposed to determine the exciton mobility edge and excitonic magnetic-polaron energy. “Forbidden” polarization components of the recombination radiation have been experimentally detected. It has been established that the moments of magnetic polarons are oriented predominantly along the {111} axes. Fiz. Tverd. Tela (St. Petersburg) 40, 894–896 (May 1998)     

GaAsSb/GaAs quantum well growth by MOCVD hydride epitaxy with laser sputtering of antimony

A new method of obtaining quantum-size GaAs_1−x Sb_x (x⩽0.45) layers is proposed. The method consists in laser vaporization of solid metallic antimony near the substrate directly in the reactor. The antimony concentration is set by the antimony sputtering time with the arsine flux shut off. The polarization of the photoluminescence of the obtained layers indicates the formation of quantum wires. The heterostructures obtained are used to fabricate laser diodes. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 84–88 (10 July 1998)     

Polarization properties of light reflected from dielectric superlattices

The polarization of the light reflected from a superlattice has been studied theoretically as o function of the angle of incidence and wavelength. The spectral and angular distributions of the ellipticity and azimuth of the polarization of the diffracted light in the vicinity of Bragg resonances have been found. It is shown that near the Brewster angle and on the boundaries of the stophands of the superlattice the effect of an anomalous increase in the ellipticity of the reflected light is manifested. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 2, pp. 199–202, March–April, 2000.     

Exciton-electron interaction in quantum wells with a two dimensional electron gas of low density

II–VI quantum-well structures containing a 2DEG of low density have been investigated by means of polarized photoluminescence, photoluminescence excitation and reflectivity in external magnetic fields up to 20 T. The spin splittings of the exciton X and the negatively charged exciton X ⁻ are measured as a function of the magnetic field strength. The behavior of the magnetic-field-induced polarization degree of the luminescence line related to X ⁻ demonstrates the formation process of negatively charged excitons from excitons and free carriers polarized by the external magnetic field. We have determined the binding energies of the trion formed either with the heavy-hole or the light-hole exciton. The optically detected magnetic resonance (ODMR) technique was applied for the first time to study the optical transition processes in a nanosecond timescale. The electron ODMR was observed with the detection on either the direct exciton or the negatively charged exciton X. Further evidence for the interaction of excitons with the electrons of the two-dimensional gas are demonstrated by a combined exciton-cyclotron resonance line observed in reflectivity and luminescence excitation, shake-up processes observed in photoluminescence, as well as inelastic and spin-dependent scattering processes. Fiz. Tverd. Tela (St. Petersburg) 41, 831–836 (May 1999) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor.     

High resolution x-ray diffractometry of the structural characteristics of a semiconducting (InGa)As/GaAs superlattice

A statistical approach is used to construct a kinematic theory of x-ray diffraction on a semiconducting superlattice with a two layer period. This theory takes two types of structural deformations into account: crystal lattice defects caused by microdefects distributed chaotically over the thickness of the superlattice, and periodicity defects of an additional superlattice potential owing to random deviations in the thicknesses of the layers of its period from specified values. Numerical simulation is used to illustrate the effect of structural defects on the development of the diffraction reflection curve. The theory is used to analyze experimental x-ray diffraction spectra of semiconducting In_xGa_1−x As/GaAs superlattices. Zh. Tekh. Fiz. 69, 44–53 (February 1999)     

Hot electron photoluminescence in GaAs crystals

The spectrum and the linear polarization of photoluminescence of hot electrons in GaAs crystals were investigated. Oscillations in the hot photoluminescence (HPL) spectrum due to the subsequent emission of LO-phonons were observed. The study of HPL depolarization in an external magnetic field yielded the scattering time due to the emission of a LO-phonon by a hot electron in the Γ-valley (τ_?0 = 1 × 10^?13 sec) as well as the Γ?L intervalley scattering time. The radiative recombination of hot electrons created in the central Γ-valley via the subsidiary L-valley was observed. The distribution function of hot electrons in a wide energy range was evaluated from the spectra.     

Zone–edge optical transitions in GaAs/AlAs lateral superlattices grown on vicinal surfaces by molecular beam epitaxy

We report on new features in the photoluminescence excitation (PLE) spectra and PLE linear polarization spectra of GaAs/AlAs lateral superlattices grown by molecular beam epitaxy (MBE). These lines appear systematically as the tilt angle of the lateral superlattice is varied. They are identified as zone–edge excitonic transitions by comparison between experimental data and detailed numerical calculations of optical transitions including valence-band mixing and tilt effects.     

Effect of electron-phonon interaction on the thermoelectric properties of superlattices

The electron relaxation time on acoustical phonons, the electrical conductivity, and the phonon-drag thermopower of a semiconductor superlattice with quasi-two-dimensional quantum wells are calculated. The inelasticity of the scattering of charge carriers is taken into account. It is shown that the phonon-drag thermopower of a superlattice can be an order of magnitude greater than the corresponding thermopower of a bulk semiconductor. Pis’ma Zh. éksp. Teor. Fiz. 69, No. 4, 290–295 (25 February 1999)     

Evidence for interlayer donor–acceptor recombination in type II GaAs/AlAs superlattices

Steady-state and time-resolved photoluminescence of (GaAs)₇(AlAs)₉type II superlattices grown simultaneously by molecular beam epitaxy on (311)A and (100) GaAs substrates, intentionally undoped or uniformly doped with silicon, has been studied. It is shown that at temperatures T >  30 K, the dominant line in the photoluminescence spectra of superlattices is caused by donor–acceptor recombination between the donors located in the AlAs layers and the acceptors in the GaAs layers. The sum of the binding energies of the donors and acceptors in the pairs has been determined. A spectrally-dependent linear polarization of the donor–acceptor line along the direction of the interface corrugation of the superlattice has been discovered in the spectra of (311)A-oriented superlattices.     

Magneto-optical studies of CdTe/CdMnTe semimagnetic semiconductor superlattices under high pressure

Abstract

The photoluminescence (PL) of a CdTe/CdMnTe superlattice has been studied at pressures up to 4.1GPa, where the phase transition occurs. PL is observed up to this pressure, and it moves to higher energy with pressure at 66meV/GPa. This result is consistent with theory. Magnetic fields decrease the band-gap of the semimagnetic CdMnTe barriers and this reduces the PL energy. The pressure dependence of this effect is expected to provide a stringent test of the theory of semimagnetic materials and of superlattices.     

Possibility of the propagation of an electromagnetic soliton in a two-dimensional superlattice

A two-dimensional electron structure in a system with a periodic potential, i.e., a two-dimensional superlattice, is investigated. An equation is derived describing the propagation of an electromagnetic wave in a two-dimensional superlattice. It is shown that an electromagnetic soliton can propagate in a two-dimensional superlattice, where it is detectable experimentally because it can induce a pulsed entrainment current. The influence of an elliptically polarized (specified) electromagnetic wave on the form of the soliton is also investigated. It is shown that a solitary wave can be amplified under certain conditions. Fiz. Tverd. Tela (St. Petersburg) 39, 1470–1472 (August 1997)     

GaAs/AIAs superlattices under pressure: steady-state and subpicosecond time-resolved measurements

Abstract

Low-temperature photoluminescence measurements under hydrostatic pressure were performed on [100]-, [311]-and [111]-grown GaAs/AlAs superlattices. The indirect optical transitions for all three growth directions were identified by their characteristic pressure dependences as originating from the X point of the AlAs conduction band. Subpicosecond-time-resolved measurements on a GaAs/AIAs superlattice show a decrease of electron transfer times from the GaAs layer into the A1As layer with pressure from 400 fs to 5Ofs and an intensity dependence of the pressure-induced crossover from type I to type II.