解析计算半导体激光器列阵的热沉温升

通过解热传导方程得到了半导体激光器列阵的热沉温升分布的解析表达式,并利用该解析式得到了热沉的温升分布图。分析了对流换热传热系数对上下表面温升的影响,当对流换热传热系数增大到某个值后,上下表面的温差变化很小,而温升随该系数的增大而降低,所得的结果与用有限元法算得的并经过实验验证的结果基本上是一致的。     

解析计算半导体激光器列阵的热沉温升

 通过解热传导方程得到了半导体激光器列阵的热沉温升分布的解析表达式,并利用该解析式得到了热沉的温升分布图。分析了对流换热传热系数对上下表面温升的影响,当对流换热传热系数增大到某个值后,上下表面的温差变化很小,而温升随该系数的增大而降低,所得的结果与用有限元法算得的并经过实验验证的结果基本上是一致的。     

Jet-type, water-cooled heat sink that yields 255-W continuous-wave laser output at 808 nm from a 1-cm laser diode bar

A newly designed jet-type, water-cooled heat sink (the funryu heat sink, meaning fountain flow in Japanese) yielded 255-W cw laser output at 808 nm from a 1-cm bar made from InGaAsP/InGaP quantum-well active layers with a 67% fill factor [70 quantum-well laser diode (LD) array along the 1-cm bar]. A funryu heat sink measuring 1.1 mm in thickness gave the LD 0.25 degrees C/W thermal resistance, one of the lowest values achieved with a 1-cm LD bar. Over a short period of operation, the device reached a maximum cw power of 255 W. To the best of our knowledge, this is the highest power ever achieved in 808-nm LD operation. In the future, the funryu heat sink may be capable of 80-W cw operation over an extended lifetime of several thousand hours.     

高功率半导体激光器微通道热沉的方案设计

 对用于高功率半导体激光器的叠片式微通道热沉进行方案设计,利用计算流体力学和数值传热学对各种方案进行数值仿真,研究了微通道的特征尺寸和流量等因素对冷却效果和流动阻力特性的影响,一般情况下,减小微通道的特征尺寸和增加冷却水的流量可以降低传热热阻,但增加了流动压力损失;另外对金刚石热扩散片（次热沉）的效果也进行了数值计算,计算结果表明:金刚石热扩散片在该类型问题中降低温度作用明显。     

高功率半导体激光器微通道热沉的方案设计

对用于高功率半导体激光器的叠片式微通道热沉进行方案设计,利用计算流体力学和数值传热学对各种方案进行数值仿真,研究了微通道的特征尺寸和流量等因素对冷却效果和流动阻力特性的影响,一般情况下,减小微通道的特征尺寸和增加冷却水的流量可以降低传热热阻,但增加了流动压力损失;另外对金刚石热扩散片（次热沉）的效果也进行了数值计算,计算结果表明:金刚石热扩散片在该类型问题中降低温度作用明显。     

Beam concentration and homogenization for high power laser diode bar

A novel optical element is presented and applied for beam concentration and homogenization of laser diode (LD) bar. It consists of a tapered SiO₂-rod with twisted surfaces which is designed and optimized by the optical system design software and fabricated by a curved surface grinder and an optical polishing lathe. Results show that a rectangular output beam spot with uniform intensity distributions both at slow and fast axis is obtained at the output facet of the rod and the beam size is only 1.3 mm ∗ 0.8 mm.     

Effective suppression of beam divergence for a high-power laser diode bar by an external-cavity technique

We describe effective suppression of beam divergence for a high-power laser diode bar by use of an external-cavity technique. Nineteen off-axis external-cavity laser diodes of the high-power laser diode are formed by feedback with a stripe mirror. At three times the threshold current, the diverging angle (1/e2) of the external-cavity laser diode bar is reduced to 1.5 degrees from 6.6 degrees (free running) with 14.1-W peak output power and 70.4% of the radiated power of the free-running state without the external cavity. This technique effectively improves the beam quality of the high-power laser diode bar.     

梳状散热器结构和角度对大功率LED结温的影响

利用计算流体力学(CFD)软件Fluent模拟了梳状肋片散热器的大功率LED灯的温度场分布。从散热器肋片高度、肋片间距以及灯具的照射角度三方面分析了散热器的散热效果。通过对比分析不同散热器的速度流场与温度场分布,得知当肋片高度为10mm、间距为4.1mm时散热器散热效果最佳。灯具的照射角度也会影响到散热器的散热性能,当照射角为90°时散热器性能最佳。     

Vector far-field propagation of a high-power laser diode

Based on the scalar nonparaxial theory, using a simple mathematical expression, a vector model to describe the propagation of a high-power laser diode beam is proposed. Through the analysis of the properties of the TM-mode propagation, a relative error criterion of optical intensity is discussed, it is found that the error is only correlative with the coordinate perpendicular to the junction plane and the propagation distance.     

Beam quality of high-power broad-area visible diode lasers

We characterize the beam quality of visible-wavelength GRIN-SCH-SQW lasers in terms of geometry and driving current. A second-moment-based, free beam measurement of M ² yields values ranging from near unity on the plane parallel to the junction, to near 10 in the perpendicular plane. The M ² values exhibit a dependence on the shape of the L-I characteristic. Higher-order moments are uso quantitatively describe the changes in beam shape as a function of current, and a correlation between the kurtosis and M ² is observed.Current address: Spire Corporation, Bedford, MA 01730, USA.     

高功率半导体激光器光纤耦合实验研究

为进一步提高光纤耦合半导体激光器的输出功率,提出了一种多单管半导体激光器通过台阶分布、光束精密准直及自由空间合束实现高功率光纤耦合输出的方法,该方法具有结构简单、光学元件易于加工、耦合效率高等优点。采用这种方法对5只封装在次热沉上的单管半导体激光器开展了芯径100 m、数值孔径0.22多模光纤的耦合实验研究,当工作电流为7.0 A时,光纤连续输出功率为21.8 W,亮度为1.83 MW/(cm2sr) ,耦合效率为70.32%。     

高功率半导体激光器光纤耦合实验研究

为进一步提高光纤耦合半导体激光器的输出功率,提出了一种多单管半导体激光器通过台阶分布、光束精密准直及自由空间合束实现高功率光纤耦合输出的方法,该方法具有结构简单、光学元件易于加工、耦合效率高等优点。采用这种方法对5只封装在次热沉上的单管半导体激光器开展了芯径100μm、数值孔径0.22多模光纤的耦合实验研究,当工作电流为7.0 A时,光纤连续输出功率为21.8 W,亮度为1.83 MW/(cm~2·sr),耦合效率为70.32%。     

Facet degradation of high-power diode laser arrays

Micro-Raman facet temperatures of high-power diode lasers with different waveguide architectures are compared. For regular operation conditions, the thermal behavior of ‘unaged’ arrays emitting in the 808-nm wavelength region with different architectures is similar, however, with an increased load thermal behaviors differ significantly and exhibit failure events at facet temperatures typically between 150 and 450 °C. From various experiments, among them facet temperature measurements for ultrahigh-power operation as well as by preparative failure analytics, we provide evidence that in arrays the front facets are significantly affected by device operation and influence the failure behavior of the whole high-power diode laser also in cases when the device failure is accompanied by dislocation creation inside the device. Received: 3 October 1999 / Accepted: 9 November 1999 / Published online: 8 March 2000     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

猝发双脉冲直线感应加速器组元研究

在原单脉冲直线感应加速器（LIA）组元的基础上，利用电缆延时和电缆反射两种方式获得了间隔500～1 000 ns的猝发双脉冲输出。在感应加速腔上进行了双脉冲实验，获得了幅度大于200 kV、前沿小于35 ns、平顶大于60 ns的双脉冲加速电压波形。两种方式中第一个脉冲的前沿和幅度都达到了原单脉冲组元的水平，表明加速腔负载的变化对波形没有明显影响，但由于电缆对波形的损耗，第二个脉冲的幅度和前沿比第一个脉冲略差。可以利用水介质传输线来代替长电缆，减小传输线的长度及其对波形的损耗。两个脉冲间的幅度差异可以通过改变长电缆的阻抗来调节。实验表明，通过这两种猝发双脉冲的产生方式并结合加速腔磁芯的改进，可简单高效地完成原单脉冲LIA的双脉冲改造。     

大功率半导体激光器阵列热串扰行为

以硬焊料传导制冷,30%填充因子半导体激光器阵列为例,建立了三维有限元模型,对阵列内部各发光单元之间的热串扰行为进行了分析研究。结果表明,当其连续波工作时间大于1.2 ms后,阵列内发光单元之间出现热串扰现象;当次热沉由CuW合金改为铜金刚石复合材料时,阵列内发光单元自热阻和相邻发光单元的串扰热阻降低,有效地降低了各发光单元之间的热串扰行为。保持阵列宽度、发光单元数目及发光单元周期不变,发现随阵列填充因子的增加,器件热阻以指数衰减趋势逐渐降低,而发光单元间的热串扰特性对此变化并不敏感;保持阵列单个发光单元输出功率,发光单元尺寸及阵列宽度不变,增加发光单元个数后,阵列内各发光单元之间热串扰加剧,填充因子越高阵列升温速率越快;但在最初约70 s内,包含不同数目发光单元的阵列最高温度差异仅约0.5 ℃,有利于多发光单元高填充因子器件高功率输出。     

大功率半导体激光器线阵列电流扩展的研究

利用金属有机物气相淀积生长了980 nm GaAs/AlGaAs分别限制应变单量子阱激光器物质,通过常规工艺制成国际标准的1 cm半导体激光器线阵列。隔离槽的深度与电流扩展有着密切的关系,对出光功率等重要参数有着较大的影响。通过隔离槽变深度实验,发现在不超过有源层的前提下,输出功率和斜率效率与隔离槽深度均成正比,阈值电流与隔离槽深度成反比,隔离槽深度过深即超过有源层会导致激光器线阵列的主要参数下降,从而最佳腐蚀深度应不超过有源层,本实验为1.993 mm。     

二极管激光线阵光束的远场特性

 利用X-Y函数记录仪测试了双异质结连续60 W,1×19激光二极管线阵（LDB）发射光束的空间光强分布和时间稳定性,被测样品的型号为JOLD-60-CPNN-1L。实验结果表明:组成DLB的19个二极管发射的光束基本上是独立传输的,DLB光束远场光强分布由19个子束非相干叠加而成,并且不随时间变化,发光区间距不相等。以实验为依据,对理论模型做了改进。将低注入电流的实验与用改进的理论模型的计算结果做了比较,二者符合甚好。     

Beam breakup integral measurement on high-power laser chains

We experimentally demonstrate the efficiency of a single-shot method to measure the beam breakup integral (B) accumulated across a high power chain. The technique uses spectrally shaped strongly chirped femtosecond pulses and takes advantage of time-to-spectral coupling generated by nonlinear effects. We performed B measurements on regenerative amplifiers (Ti:sapphire) and on the ALISE 200 J facility currently installed at CEA-CESTA (France).     

高功率半导体激光器的可靠性与寿命评价

介绍了高功率半导体激光器的结构特点、失效机理和热产生机制等方面的内容。就寿命评价方面展开讨论,详细分析了高功率半导体激光器寿命评价的难点、现有方法以及国内外发展状况,最后就寿命评价系统及寿命试验提出了一些建议。高功率半导体激光器在工业加工、国防航天等领域的巨大应用前景推动其可靠性与寿命的发展,而其可靠性的提高和寿命的延长会大大拓宽其应用领域。