Structural and optical properties of Co-doped NiO films prepared by SILAR method

In this study, transparent thin films of un-doped and Co-doped nickel oxide were deposited onto microscopic glass substrates using the successive ionic layer adsorption and reaction (SILAR) method. The effect of cobalt doping on structural, morphological and optical properties was investigated. XRD studies reveal that all the films are polycrystalline with cubic structure and exhibit (1 1 1) and (2 2 2) preferential orientations. Co is well incorporated in the host lattice without altering the structure. All films retain high transparency throughout the visible spectral regime. No significant shift in Raman spectra was observed due to the Co doping.     

Effect of cationic precursor pH on optical and transport properties of SILAR deposited nano crystalline PbS thin films

The lead sulfide (PbS) thin films were deposited on glass substrate using successive ionic layer adsorption and reaction (SILAR) method at different pH of the cationic precursor, keeping the pH of the anionic precursor invariant. In this work, we establish that the pH of the cationic precursor and in turn the size of the crystallites affects the optical and electrical properties of PbS thin films. The characterization of the film was carried out using X-ray diffraction, scanning electron microscopy, optical and electrical measurement techniques. The presence of nanocrystallites was revealed by optical absorption and structural measurements. The PbS thin films obtained under optimal deposition conditions were found to be polycrystalline with face centered cubic structure. The lattice parameter, grain size, micro strain, average internal stress and dislocation density in the film were calculated and correlated with pH of the solution. The values of average crystallite size were found to be in the range 16-23 nm. Optical studies revealed the existence of direct and indirect band gap values in the range 0.99-1.84 eV and 0.60-0.92 eV, respectively. The room temperature resistivity of the synthesized PbS films was in the range of 1.2 × 10⁷ to 3.5 × 10⁷ Ω cm.     

Third-order nonlinear optical properties of thin sputtered gold films

Au films of thickness ranging between 5 and 52 nm were prepared by sputtering on quartz substrates and their third-order nonlinear optical response was investigated by Optical Kerr effect (OKE) and Z-scan techniques using 532 nm, 35 ps laser pulses. All prepared films were characterized by XRD, AFM and UV-VIS-NIR spectrophotometry while their third-order susceptibility χ⁽³⁾ was measured and found to be of the order of 10⁻⁹ esu. The real and imaginary parts of the third-order susceptibility were found in very good agreement with experimental results and theoretical predictions reported by Smith et al. [D.D. Smith, Y. Yoon, R.W. Boyd, Y.K. Cambell, L.A. Baker, R.M. Crooks, M. George, J. Appl. Phys. 86 (1999) 6200].     

近距离升华沉积CdTe掺Cd薄膜的微结构和电学、光学特性

采用近距离升华技术制备了掺杂Cd元素的CdTe多晶薄膜.利用X射线衍射仪和扫描电子显微镜表征其微结构,用霍尔效应测试仪和紫外可见分光光度计分析其电学、光学特性.结果显示,适量的掺杂Cd元素可改善CdTe薄膜晶形,显著提高薄膜的电导特性,由弱的p型电导转变为导电性能良好的n型电导,但对光能隙影响不大. 关键词： 近距离升华 CdTe薄膜 掺杂Cd 电学和光学特性     

Effect of precursors on structure, optical and electrical properties of chemically deposited nanocrystalline ZnO thin films

Nanocrystalline ZnO thin films were chemically deposited on glass substrates using two different precursors namely, zinc sulphate and zinc nitrate. XRD studies confirm that the films are polycrystalline zinc oxide having hexagonal wurtzite structure with crystallite size in the range 25-33 nm. The surface morphology of film prepared using zinc sulphate exhibits agglomeration of small grains throughout the surface with no visible holes or faulty zones, while the film prepared using zinc nitrate shows a porous structure consisting of grains with different sizes separated by empty spaces. The film prepared using zinc sulphate shows higher reflectance due to its larger refractive index which is related to the packing density of grains in the film. Further, the film prepared using zinc sulphate is found to have normal dispersion for the wavelength range 550-750 nm, whereas the film prepared using zinc nitrate has normal dispersion for the wavelength range 450-750 nm. The direct optical band gaps in the two films are estimated to be 3.01 eV and 3.00 eV, respectively. The change in film resistance with temperature has been explained on the basis of two competing processes, viz. thermal excitation of electrons and atmospheric oxygen adsorption, occurring simultaneously. The activation energies of the films in two different regions indicate the presence of two energy levels - one deep and one shallow near the bottom of the conduction band in the bandgap.     

Fabrication and optical properties of SnS thin films by SILAR method

Although the fabrication of tin disulfide thin films by SILAR method is quiet common, there is, however, no report is available on the growth of SnS thin film using above technique. In the present work, SnS films of 0.20 μm thickness were grown on glass and ITO substrates by SILAR method using SnSO₄ and Na₂S solution. The as-grown films were smooth and strongly adherent to the substrate. XRD confirmed the deposition of SnS thin films. Scanning electron micrograph revealed almost equal distribution of the particle size well covered on the surface of the substrate. EDAX showed that as-grown SnS films were slightly rich in tin component while UV-vis transmission spectra exhibited high absorption in the visible region. The intense and sharp emission peaks at 680 and 825 nm (near band edge emission) dominated the photoluminescence spectra.     

Effect of boron ion implantation on the structural, optical and electrical properties of ZnSe thin films

Zinc Selenide (ZnSe) thin films were deposited onto well cleaned glass substrates using vacuum evaporation technique under a vacuum of 3×10⁻⁵ mbar. The prepared ZnSe samples were implanted with mass analyzed 75 keV B⁺ ions at different doses ranging from 10¹² to 10¹⁶ ions cm⁻². The composition, thickness, microstructures, surface roughness and optical band gap of the as-deposited and boron-implanted films were studied by Rutherford backscattering (RBS), grazing incidence X-ray diffraction, Atomic force microscopy, Raman scattering and transmittance measurements. The RBS analysis indicates that the composition of the as-deposited and boron-implanted films is nearly stoichiometric. The thickness of the as-deposited film is calculated as 230 nm. The structure of the as-deposited and boron-implanted thin films is cubic. It is found that the surface roughness increases on increasing the dose of boron ions. In the optical studies, the optical band gap value decreases with an increase of boron concentration. In the electrical studies, the prepared device gave a very good response in the blue wavelength region.     

The influence of Fe doping on the structural, magnetic and optical properties of nanocrystalline ZnO particles

We report the results of an investigation of Fe-doped nanocrystalline ZnO particles synthesized using the co-precipitation method with doping concentrations from 5 up to 31 at%. To understand how the dopant influenced the structural, magnetic and optical properties of nanocrystalline ZnO particles, X-ray diffraction, energy dispersive X-ray spectroscopy, infrared absorption spectroscopy, UV-vis spectroscopy, electron spin resonance spectroscopy (ESR) and vibrating sample magnetometer were employed. From the analysis of X-ray diffraction, our Fe-doped nanocrystalline ZnO particles are identified as having the wurtzite crystal structure and the unit cell volume increases with increasing doping concentrations. However, impurity phases are observed for Fe contents higher than 21 at%. Sample structures were further studied by infrared spectra, from which a broad and strong absorption band in the range of 400-700 cm⁻¹ and -OH stretching vibrational mode at approximately 3400 cm⁻¹ were observed. Ultraviolet-visible measurements showed a decrease in the energy gap with increasing Fe content, probably due to an increase in the lattice parameters. Magnetic measurements showed a ferromagnetic behavior for all samples. ESR results indicate the presence of Fe in both valence states Fe²⁺ and Fe³⁺.     

Effect of K-doping on structural and optical properties of ZnO thin films

In this work, K-doped ZnO thin films were prepared by a sol–gel method on Si(111) and glass substrates. The effect of different K-doping concentrations on structural and optical properties of the ZnO thin films was studied. The results showed that the 1 at.% K-doped ZnO thin film had the best crystallization quality and the strongest ultraviolet emission ability. When the concentration of K was above 1 at.%, the crystallization quality and ultraviolet emission ability dropped. For the K-doped ZnO thin films, there was not only ultraviolet emission, but also a blue emission signal in their photoluminescent spectra. The blue emission might be connected with K impurity or/and the intrinsic defects (Zn interstitial and Zn vacancy) of the ZnO thin films.     

Structural and optical properties of electrodeposited molybdenum oxide thin films

Electrosynthesis of Mo(IV) oxide thin films on F-doped SnO₂ conducting glass (10-20/Ω/□) substrates were carried from aqueous alkaline solution of ammonium molybdate at room temperature. The physical characterization of as-deposited films carried by thermogravimetric/differential thermogravimetric analysis (TGA/DTA), infrared spectroscopy and X-ray diffraction (XRD) showed the formation of hydrous and amorphous MoO₂. Scanning electron microscopy (SEM) revealed a smooth but cracked surface with multi-layered growth. Annealing of these films in dry argon at 450 °C for 1 h resulted into polycrystalline MoO₂ with crystallites aligned perpendicular to the substrate. Optical absorption study indicated a direct band gap of 2.83 eV. The band gap variation consistent with Moss rule and band gap narrowing upon crystallization was observed.Structure tailoring of as-deposited thin films by thermal oxidation in ambient air to obtain electrochromic Mo(VI) oxide thin films was exploited for the first time by this novel route. The results of this study will be reported elsewhere.     

Effect of the laser fluence on structural and optical characterization of thin CdS films synthesized by femtosecond pulsed laser deposition

CdS thin films have been grown on Si(1 1 1) and quartz substrates using femtosecond pulsed laser deposition. X-ray diffraction, atomic force microscopy, photoluminescence measurement, and optical transmission spectroscopy were used to characterize the structure and optical properties of the deposited CdS thin films. The influence of the laser fluence (laser incident energy in the range 0.5–1.5 mJ/pulse) on the structural and optical characterizations of CdS thin films has been studied. The results indicate that the structure and optical properties of the CdS thin films can be improved as increasing the per pulse output energy of the femtosecond laser to 1.2 mJ. But when the per pulse output energy of the femtosecond laser is further increased to 1.5 mJ, which leads to the degradation of the structure and optical properties of the CdS thin films.     

Structural, optical and electrochemical properties of TiO2 thin films grown by APCVD method

Atmospheric pressure chemical vapor deposition (APCVD) of TiO₂ thin films has been achieved onto glass and onto ITO-coated glass substrates, from the reaction of TiCl₄ with ethyl acetate (EtOAc). The effect of the synthesis temperature on the optical, structural and electrochemical properties was studied through spectral transmittance, X-ray diffraction (XRD) and electrochemical impedance spectroscopy (EIS) measurements. It was established that the TiO₂ films deposited onto glass substrate, at temperatures greater than 400 °C grown with rutile type tetragonal structure, whereas the TiO₂ films deposited onto ITO-coated glass substrate grown with anatase type structure. EIS was applied as suitable method to determine the charge transfer resistance in the electrolyte/TiO₂ interface, typically found in dye-sensitized solar cells.     

Effect of position-dependent effective mass on linear and nonlinear optical properties of a cubic quantum dot

In this paper, we first obtain an analytic relation for studying the position-dependent effective mass in a GaAs/Al_xGa_1−xAs cubic quantum dot. Then, the effect of position-dependent effective mass on the intersubband optical absorption coefficient and the refractive index change in the quantum dot are studied. Our numerical calculations are performed using both a constant effective mass and the position-dependent effective mass. We calculate the linear, nonlinear and total intersubband absorption coefficient and refractive index change as a function of the incident optical intensity and structural parameters such as dot length. The results obtained from the present work show that spatially varying electron effective mass plays an important role in the intersubband optical absorption coefficient and refractive index change in a cubic quantum dot.     

Growth and optical properties of Fe2O3 thin films: A study of quantum confinement effects by experiment and theory

Thin iron films in the thickness range 0.7–48 nm have been deposited on high quality Corning glass and Si(100) substrates by radio frequency magnetron sputtering. The films were then oxidized by annealing at temperatures of 400−450 °C in a furnace in air. X-ray diffraction experiments revealed the formation of single-phase α-Fe₂O₃. The films were continuous and present negligible surface roughness. Ultraviolet-visible light absorption spectroscopy has shown a blue shift of both, the indirect and direct band gaps of hematite. The experimental results are interpreted as evidences of quantum confinement effects. This is facilitated by theoretical calculations based on Hartree Fock approximation as applied for an electron-hole system, in the framework of effective mass approximation. The agreement between theory and experiment supports the quantum confinement interpretation.     

Influence of Al concentration on electrical, structural and optical properties of Al-As codoped p-ZnO thin films

We report the influence of Al concentration on electrical, structural, optical and morphological properties of Al-As codoped p-ZnO thin films using RF magnetron sputtering. Al-As codoped p-ZnO films with different Al concentrations were fabricated using As back diffusion from the GaAs substrate and sputtering Al₂O₃ mixed ZnO targets (1, 2 and 4 at%). The grown films were investigated by Hall effect measurement, X-ray diffraction (XRD), electron probe microanalysis (EPMA), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and atomic force microscopy (AFM) to study the electrical, structural, optical and morphological properties of the films. From the XRD, it was observed that both full-width at half-maximum (FWHM) and c-axis lattice constant have similar trends with respect to Al concentration. Hall measurements showed that the hole concentration increases as the Al concentration increases from 10¹⁵ to 10²⁰ cm⁻³. The increase in hole concentration upon codoping was supported by the red shift in the near-band-edge (NBE) emission observed from room temperature PL spectra. The proposed p-type mechanism due to As_Zn-2V_Zn complex was confirmed by low temperature PL and XPS analysis. The low FWHM, resistivity and peak-to-valley roughness observed by XRD, Hall measurement and AFM, respectively, suggest that 1 at% Al-doped ZnO:As film is the best codoped film.     

Interface effects on the nonlinear optical properties of thin films

The optical nonlinearity of low-dimension structures is studied in the self-effect case at a wavelength of 630 nm in a range of light intensities below 0.1 W/cm² by waveguide methods. Common tendencies in relationships between intensity of light and optical properties of multilayer structures and semiconductor-doped glass films are detected. It is shown that the state of interfaces determines the character of optical nonlinearity.     

Effect of oxygen partial pressure on the structural and optical properties of dc reactive magnetron sputtered molybdenum oxide films

Molybdenum oxide films (MoO₃) were deposited on glass and crystalline silicon substrates by sputtering of molybdenum target under various oxygen partial pressures in the range 8 × 10⁻⁵–8 × 10⁻⁴ mbar and at a fixed substrate temperature of 473 K employing dc magnetron sputtering technique. The influence of oxygen partial pressure on the composition stoichiometry, chemical binding configuration, crystallographic structure and electrical and optical properties was systematically studied. X-ray photoelectron spectra of the films formed at 8 × 10⁻⁵ mbar showed the presence of Mo⁶⁺ and Mo⁵⁺ oxidation states of MoO₃ and MoO_3−x. The films deposited at oxygen partial pressure of 2 × 10⁻⁴ mbar showed Mo⁶⁺ oxidation state indicating the films were nearly stoichiometric. It was also confirmed by the Fourier transform infrared spectroscopic studies. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 × 10⁻⁴ mbar showed the presence of (0 k 0) reflections indicated the layered structure of α-phase MoO₃. The electrical conductivity of the films decreased from 3.6 × 10⁻⁵ to 1.6 × 10⁻⁶ Ω⁻¹ cm⁻¹, the optical band gap of the films increased from 2.93 to 3.26 eV and the refractive index increased from 2.02 to 2.13 with the increase of oxygen partial pressure from 8 × 10⁻⁵ to 8 × 10⁻⁴ mbar, respectively.     

Incidence angle dependence on structural and optical properties of UHV deposited copper nano layers

Copper nano-layers with different incident angles as vertical, 20 and 30 degrees, same 73.3 nm thicknesses, and same deposition rate, were deposited on glass substrates, at 373K temperature, under UHV conditions. Their nano-structures were determined by AFM and XRD methods. Their optical properties were measured by spectrophotometry in the spectral range of 300–1100 nm. Kramers–Kronig relations were used for the analysis of the reflectivity curves of Cu films to obtain the optical constants of the nano layers. Different incident angles show important effects on both structural and optical properties. The effective medium approximation was employed to establish the relation between structure zone model (SZM) and EMA predictions. By increasing incidence angle the separation of metallic grains increases, hence the volume fraction of voids increases. That is in agreement with AFM analysis. The predictions of Drude free-electron theory are compared with experimental results for dielectric functions of these nano layers. There is a good agreement between our optical results and Hangman's optical results for a bulk standard Cu sample.     

Effect of Co2+ on the growth,optical properties and laser damage threshold of potential nonlinear optical l-alanine single crystal

Good transparent bulk single crystals of pure l-alanine (LA) and cobalt doped LA crystals have been synthesized and successfully grown by slow-cooling method from their aqueous solutions. The concentration of metal dopants in the mother solution with 0.5 mol% for cobalt was carried out individually and crystals were obtained with well defined morphology. The as grown metal doped and pure single crystals were characterized by single crystal XRD studies which confirm that the incorporation of metallic dopants has not changed the basic structure of the parent crystal. The absorption of these crystals was analyzed and the result confirms that they possess low absorption in the range 230–1100 nm. Fourier transform infrared (FTIR) spectroscopy was carried out to investigate the molecular vibrations of these crystals and to confirm the incorporation of the dopants. The thermal properties have been studied by TGA/DTA curves. The EDAX measurement and surface morphology were studied for pure and metal doped LA crystals. The second harmonic generation (SHG) signals were observed using Nd: YAG laser with fundamental wavelength of 1064 nm in pure and metal doped crystals. The laser damage threshold was measured for pure and metal doped LA crystals and also tested by using a Q-switched Nd: YAG laser showed enhanced LDT value for metal (Co²⁺) doped LA crystal compared to pure LA crystal due to the metallic substitutions thus proving their useful candidature for nonlinear optical applications.