Diffusion of N adatoms on the Fe(100) surface

The diffusion of individual N adatoms on Fe(100) has been studied using scanning tunneling microscopy and ab initio density functional theory (DFT) calculations. The measured diffusion barrier for isolated N adatoms is E(d) = (0.92+/-0.04) eV, with a prefactor of nu(0) = 4.3x10(12) s(-1), which is in quantitative agreement with the DFT calculations. The diffusion is strongly coupled to lattice distortions, and, as a consequence, the presence of other N adatoms introduces an anisotropy in the diffusion. Based on experimentally determined values of the diffusion barriers and adsorbate-adsorbate interactions, the potential energy surface experienced by a N adatom is determined.     

石墨烯-六方氮化硼面内异质结构的扫描隧道显微学研究

石墨烯-六方氮化硼面内异质结构因可调控石墨烯的能带结构而受到广泛关注. 本文介绍了在超高真空体系内, 利用两步生长法在两类对石墨烯分别有强和弱电子掺杂的基底, 即Rh(111)和Ir(111)上制备石墨烯-六方氮化硼单原子层异质结构. 通过扫描隧道显微镜及扫描隧道谱对这两种材料的形貌和电子结构进行研究发现: 石墨烯和六方氮化硼倾向于拼接生长形成单层的异质结构, 而非形成各自分立的畴区; 在拼接边界处, 石墨烯和六方氮化硼原子结构连续无缺陷; 拼接边界多为锯齿形型, 该实验结果与密度泛函理论计算结果相符合; 拼接界面处的石墨烯和六方氮化硼分别具有各自本征的电子结构, 六方氮化硼对石墨烯未产生电子掺杂效应.     

Theoretical study of vacancies and adatoms in white graphene

The stability of the B and N atomic vacancies and divacancies in an h-BN monolayer deformed by 2 and 4% along one of the axes has been investigated. It has been established that the N atomic vacancies are most stable; their concentration is insignificant and does not affect the properties of white graphene. The number of vacancies depends on the mobility of N and B atoms on the layer surface; therefore, the probability of recombination with the vacancies has been estimated. It has been revealed that the energy barrier for the migration of the B and N adatoms is about 0.23 and 1.23 eV, respectively. In view of such a low barrier for the B adatom, this type of adatoms will quite rapidly move over the surface and recombine with vacancies, in contrast to the N adatoms. Therefore, only nitrogen atom vacancies can exist in the h-BN monolayer grown by the methods, where the adatoms could possibly appear on the surface.     

Theoretical study of the Ni growth on Pt stepped surfaces

We have investigated the growth of Ni on Pt stepped surfaces with (1 1 1) terraces by means of potentials derived from the second moment approximation in a tight-binding model. The activation energies associated to these processes are determined. The Schwoebel barriers of Ni atoms descending steps of Pt stepped surfaces are calculated for different kinds of straight steps (A and B steps) differing by the orientation of the ledge. In addition, we study the diffusion of Ni adatoms at fcc or hcp sites in the presence of small adislands on the terraces, in the vicinity of the A and B steps. We show that a good estimate of the potential wells and diffusion barriers could be given by introducing a lateral effective pair interaction model, the interactions extending up to the next nearest neighbors. Finally, we have carried out Kinetic Monte-Carlo simulations to investigate the Ni wire formation at Pt step edges and the influence of the exchange processes in the alloy formation.     

Quantum size effect on the diffusion barriers and growth morphology of Pb/Si(111)

An intriguing growth morphology of Pb islands on a Si(111) surface is observed in our STM experiments: the growth of a Pb layer on Pb islands with unstable heights starts from the periphery and moves towards the center, while the nucleation of the next layer on stable Pb islands starts away from the periphery. Using first-principles total energy calculations, we have studied the diffusion barriers of Pb adatoms on a freestanding Pb(111) film as a function of film thickness. The diffusion barriers are found to be very low (<60 meV), and a bi-layer oscillation due to the quantum size effect (QSE) is observed, with a lower barrier on the odd-layered, relatively unstable Pb films. The diffusion barrier difference between the odd- and even-layered film is as large as 40 meV. The observed unusual growth can be attributed to this big difference in the diffusion barriers due to QSE.     

Mechanism of associative oxygen desorption from Pt(111) surface

Mechanism of the associative desorption of oxygen from the Pt(111) surface has been studied on atomic level by means of DFT/GGA calculations and kinetic Monte Carlo simulations. It has been found that two oxygen adatoms can occur, with sufficient probability, in neighboring on-top sites, which is essential for formation and subsequent evaporation of the oxygen molecule. Monte Carlo simulations have demonstrated effectiveness of this channel for O₂ formation on Pt(111) and strongly support the suggested model of associative desorption from transition metal surfaces.     

表面Cu原子间相互作用对Cu(001)表面跳跃扩散行为的影响

采用嵌入原子方法的原子间相互作用势，利用准静态分子动力学模拟研究了Cu原子在Cu(001)表面吸附所导致的基体晶格畸变以及对其附近的另一个吸附原子自扩散行为的影响.研究结果表明，吸附原子的存在可以导致多达10层的Cu基体晶格产生畸变.两个吸附原子所产生的晶格畸变应力场之间的相互作用，可以导致吸附原子运动活性的增加.通过比较同一路径上往返跳跃扩散势垒的差异发现，在原子间相互作用势的有效距离之外，两个吸附原子的扩散行为可以认为是存在晶格畸变应力场相互作用的两个独立吸附原子的扩散；在原子间相互作用势的有效距离之 关键词： 表面吸附原子 晶格畸变 表面二聚体 扩散     

Simulation of surfactant effects on the growth of metal homoexpitaxial Sb-Ag/Ag(111)

A kinetic Monte Carlo simulation is performed in order to study the effect of Sb atoms as a surfactant on the growth of Ag on Ag(111).In our model the repulsive mechanism in which the surfactant Sb atoms repel diffusing Ag adatoms,and the exchange mechanism between Ag and Sb atoms,are considered.Our simulations show that the effects of Sb atoms for Ag/Ag(111) growth system are mainly to increase the chances for Ag atoms to overcome the Ehrlich-Schwoebel barrier both in the interlayer growth and along the edge diffusion.The influence of the coverage of Sb atoms and substrate temperature on the growth of Ag/Sb/Ag(111) is discussed.     

Simulation of surfactant effect on growth of metal homoexpitaxial Sb－Ag/Ag(111)

A kinetic Monte Carlo simulation is performed in order to study the effect of Sb atoms as a surfactant on the growth of Ag on Ag(111). In our model the repulsive mechanism in which the surfactant Sb atoms repel diffusing Ag adatoms, and the exchange mechanism between Ag and Sb atoms, are considered. Our simulations show that the effects of Sb atoms for Ag/Ag(111) growth system are mainly to increase the chances for Ag atoms to overcome the Ehrlich--Schwoebel barrier both in the interlayer growth and along the edge diffusion. The influence of the coverage of Sb atoms and substrate temperature on the growth of Ag/Sb/Ag(111) is discussed.     

Electronic stabilization of the Si(111)5 × 2-Au surface: Pb and Si adatoms

Using scanning tunneling microscopy/spectroscopy (STM/STS), angle resolved photoemission spectroscopy (ARPES) and first-principles density functional theory (DFT), we study the structural and the electronic properties of the Si(111)5 × 2-Au surface decorated with Pb adatoms. The STM topography data reveal that Pb adatoms form a similar superstructure to that observed in the case of Si adatoms on a bare Si(111)5 × 2-Au surface. The DFT calculations show that preferential adsorption sites of Pb atoms are located near the double Au chain. Bias dependent STM topography and spectroscopy together with the DFT calculations allow us to distinguish Pb from Si adatoms. Both the Si and Pb adatoms modify the electronic properties in the same way, which confirms the electronic origin of the stabilization of the surface.     

铜箔上生长的六角氮化硼薄膜的扫描隧道显微镜研究

利用扫描隧道显微镜研究了采用化学气相沉积法在铜箔表面生长出的高质量的六角氮化硼薄膜. 大范围的扫描隧道显微镜图像显示出该薄膜具有原子级平整的表面, 而扫描隧道谱则显示, 扫描隧道显微镜图像反映出的是该薄膜样品的隧穿势垒空间分布. 极低偏压的扫描隧道显微镜图像呈现了氮化硼薄膜表面的六角蜂窝周期性原子排列, 而高偏压的扫描隧道显微镜图像则呈现出无序和有序排列区域共存的电子调制图案. 该调制图案并非源于氮化硼薄膜和铜箔衬底的面内晶格失配, 而极有可能来源于两者界面处的氢、硼和/或氮原子在铜箔表面的吸附所导致的隧穿势垒的局域空间分布.     

Controllable oxidation of h-BN monolayer on Ir(111) studied by core-level spectroscopies

The effect of atomic oxygen adsorption on the structure and electronic properties of monolayer hexagonal boron nitride (h-BN) grown on Ir(111) has been studied using near edge X-ray absorption fine structure spectroscopy (NEXAFS), photoelectron spectroscopy (PES), and low-energy electron diffraction (LEED). It has been shown that the oxidation of the h-BN monolayer occurs through a gradual substitution of N by O in the h-BN lattice. This process leads to the formation of defect sites corresponding to three different types of the B atom environment (BN_3 ? xO_x with x = 1,2,3). The oxidation of the h-BN monolayer is very different from the case of graphene on Ir(111), where adsorption of atomic oxygen results mainly in the formation of epoxy groups [J. Phys. Chem. C. 115, 9568 (2011)]. A post-annealing of the h-BN monolayer after oxygen exposure results in further destruction of the B–N bonds and formation of a B₂O₃-like structure.     

Unusual cluster shapes and directional bonding of an fcc metal: Pt/Pt(111)

Small clusters of Pt adatoms grown on Pt(111) exhibit a preference for the formation of linear chains, which cannot be explained by simple diffusion-limited aggregation. Density functional theory calculations show that short chains are energetically favorable to more compact configurations due to strong directional bonding by d(z)(2)-like orbitals, explaining the stability of the chains. The formation of the chains is governed by substrate distortions, leading to funneling towards the chain ends.     

Energy barriers of single-adatoms diffusion on unreconstructed and reconstructed (110) surfaces

The present paper is aimed mainly to investigate theoretically the diffusion of Ag, Cu, Au and Pt adatoms on the (1 × 1) unreconstructed geometry for Ag, Cu and Pt (110), and reconstructed geometries ((1 × 2), (1 × 3) and (1 × 4)) for Pt and Au (110) surfaces. We consider the single adatom diffusion when additional atoms are deposited in adjacent row. For this study, we have used the molecular statics simulations combined with the embedded atom method. For several systems, we have calculated the activation barriers for hopping mechanism. For the diffusion on the unreconstructed surfaces, the trends for the activation barriers are the same for all considered systems except for Cu/Ag (110) system, where the activation barrier do not change. Further, our results indicate that additional atoms lead to a small decreasing of activation barriers for diffusion on reconstructed surfaces for some systems, while for other systems; the activation barrier remains practically unchanged.     

Contrast inversion of the h-BN nanomesh investigated by nc-AFM and Kelvin probe force microscopy

Single sheets of hexagonal boron nitride (h-BN) on transition metals provide a model system for layered insulating materials as well as a functional substrate for molecules and metal clusters. The progress in the understanding of h-BN layers on transition metals was mainly driven by scanning tunnelling microscopy (STM) and photoelectron spectroscopy (PES) measurements within the last decade, while direct measurements of mechanical and electrical properties are still rare. Our investigations of the two-dimensional (2D) h-BN nanomesh on a Rh(111) substrate by high-resolution noncontact atomic force microscopy (nc-AFM) reveal a complex surface structure including a frequently observed contrast inversion. Detailed 2D force spectroscopy measurements are revealing towards a mechanical elastic deformation of the h-BN monolayer caused by the tip-sample interaction. Furthermore, Kelvin probe force microscopy (KPFM) and spectroscopy measurements show local work function variations of the nanomesh, proving the results obtained by PES but additionally providing detailed local information.     

Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al₂O₃ substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.     

Graphene growth on h-BN by molecular beam epitaxy

The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.     

On diffusion lengths of Ga adatoms on AlAs(111) and GaAs(111) surfaces

An expression for calculating the effective diffusion length from the measured values of the height and density of nanowhiskers is derived in terms of the diffusion growth model. From experimental data for GaAs nanowhisker MBE growth, the diffusion lengths of Ga adatoms on the GaAs(111) and AlAs(111) surfaces are evaluated. Under typical growth conditions, the value of the Ga diffusion length is found to be about several hundreds of nanometers.     

Modelling self-ordering behaviour on Ag covered Pt vicinal surfaces

We use computer simulation to explore the formation process of a monolayer of Ag on a stepped Pt(111) substrate and the formation of 3D Pt nanostructures on an Ag covered (111) and (100) Pt substrate. We show that broken lines of Pt nanostructures are preferred at the step edges on the (111) substrate while continuous lines of Pt nanowires are preferred at the step edge on the (100) substrate. This different behaviour is due to the exposed front facet of the nanostructures running along the step, specifically for the (100) stepped substrate a nanowire grown on the step edge has a stable (111) exposed front facet, whereas a nanowire grown on the (111) substrate would have an unstable (100) front facet (depending on the direction of the step). For the Pt nanowires grown on the (100) substrate we show how arriving Pt dimers (and monomers) preferentially move up off the Ag substrate onto the nanowire's (111) facet where they undergo fast diffusion. We also show that these Pt dimers (and monomers) move up and down the nanowire's facet until a vacancy or defect is encountered.     

Formation of a monolayer h-BN nanomesh on Rh(111) studied using in-situ STM

As a member of the 2 D family of materials, h-BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h-BN can be synthesized on Rh(111) surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneling microscopy(STM), we directly observed the formation of h-BN in real-time. By analyzing the deposition under variable substrate temperatures and the filling rate of the h-BN overlayer vacant hollows during growth, we studied the growth kinetics of how the borazine molecules construct the h-BN overlayer grown on the Rh surface.