Role of deposition temperature and Sn content on structural,optical & electrical properties of In2O3 thin films

High quality indium tin oxide (ITO) thin films (In_2−xSn_xO₃: x = 0, 0.1 and 0.2) have been grown by using pulsed laser deposition technique on quartz substrates. The structural, morphological, optical and electrical investigations of deposited films have been studied as a function of substrate deposition temperatures and the Sn compositions. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) patterns affirm that each film is polycrystalline in nature with cubic bixbyite single phase structure which preferentially oriented along (222) Miller plane. The existence of chemical bonding and functional groups was investigated by FTIR spectroscopy. The TEM micrograph of films (@450°C) for x = 0.1 and x = 0.2 reveal spherical morphology with average particle size 63 nm and 51 nm, respectively. The SEM and AFM images show uniform flower like surface morphology and well-demonstrated nanosized spherical particles, respectively. The widening of the band gap of all the films were exclusively defined by Burstein-Moss shift. The Hall measurement reveals that each film is degenerate with n-type semiconducting nature along with high mobility. Low resistivity (2.024 × 10⁻⁴ Ω-cm) and high transparency (92.58%) along with high carrier concentration (8.915 × 10²⁰ cm⁻³) were optimized for x = 0.1 film at 450°C deposition temperature.     

Investigation of phase segregation in Zn1−xMgxO systems

The present work reports on the synthesis of the Zn_1?xMg_xO (x = 0, 0.02, 0.05, 0.10, 0.15 and 0.20) samples by sol–gel method and the investigations on their structural, morphological and optical properties. X-ray diffraction (XRD) data analysis confirms the formation of pure ZnO phase below 10% Mg doping and MgO related phases appears in 10% doped sample indicating that phase segregation of MgO starts at x ≥ 0.10 samples. The phase segregation observed through XRD analysis is also supported by results from Scanning Electron Microscopy (SEM), Raman spectroscopy and photoluminescence studies. Furthermore, the enhancement in optical band gap, with Mg doping, from 3.1 ± 0.1 eV to 3.5 ± 0.1 eV has been observed through UV–Vis spectroscopic analysis. Above results have been discussed on the basis of defects level observed through Raman and photoluminscence studies.     

Characterisation of thin films obtained by laser ablation of Ge28Se60Sb12 glasses

Films of nominal composition Ge₂₈Se₆₀Sb₁₂ were deposited on microscope slides by pulsed laser deposition (PLD), using either bulk or powdered glassy targets and a Nd:YAG laser (λ=266 nm). The films with thickness comprised between 400 and 800 nm showed a smooth and dense morphology. They were homogeneous in composition all over the samples with a composition somewhat deficient in selenium compared to the nominal one: Ge_28.1±0.3Se_56.1±0.1Sb_15.8±0.2 and Ge_29.0±0.3Se_55.5±0.1Sb_15.5±0.2 for films obtained from powdered glassy targets and bulk targets, respectively. The optical characteristics of the films were extracted from the transmission spectra recorded between 250 and 2500 nm. In particular, the refractive index at 1.5 μm was found to be 2.75±0.03, close to that of the bulk glass, as expected for dense films. The decrease in the optical band gap and the increase in the Urbach absorption edge with the film thickness were attributed to an increase in disorder.     

Exciton spatial dispersion determined through the two-photon Raman scattering via excitonic molecule state at large wave vectors in CuCl

With simultaneous excitation of two dye laser beams the Raman scattering is studied in which the intermediate state is the excitonic molecule and the final states are the longitudinal and transverse excitons. The L-T splitting shows a large k-dependence. The effective masses are determined to be (2.3 ± 0.1)m₀ and (3.1 ± 0.1)m₀ for the transverse and longitudinal excitons, respectively.     

High performance organic planar heterojunction solar cells by controlling the molecular orientation

A highly efficient planar heterojunction OSC based on zinc phthalocyanine (ZnPc)/fullerene (C₆₀) by controlling the orientation of the ZnPc by using copper iodide (CuI) as the interfacial layer is reported. The proportion of face-on ZnPc molecules was increased significantly on the CuI layer compared to the layer without the CuI layer, which was analyzed with wide-angle X-ray scattering (WAXS) and optical absorption. The power conversion efficiency (PCE) of the orientation controlled planar heterojunction OSC was remarkably enhanced to 3.2 ± 0.1% compared with 1.2 ± 0.1% of the conventional OSCs without the control of the molecular orientation. By inserting the 3-nm-thick CuI layer, J_SC, V_OC and FF have increased from 4.6 ± 0.2 to 8.9 ± 0.2 mA cm^?2, from 0.48 ± 0.01 to 0.59 ± 0.02 V, and from 0.56 ± 0.01 to 0.61 ± 0.02, respectively. V_OC enhancement is discussed with the result of the ultraviolet photoemission spectra (UPS) measurements.     

Anisotropic polariton dispersion in red HgI2

We have measured resonant Brillouin Scattering near the A-exciton region of a layer-semiconductor, red-HgI₂. The Brillouin shift is interpreted in terms of a scattering process between the two polariton states by an acoustic phonon. The estimated exciton masses for the translational motion are (0.68 ± 0.1)m₀ and (1.2 ± 0.1)m₀ for the (100 and (001) directions, respectively.     

Structural and magnetic properties of the double perovskite Sr2MnWO6

The nuclear and magnetic structure and the magnetic properties of the polycrystalline double perovskite Sr₂MnWO₆ have been studied. Rietveld analysis of neutron powder diffraction (NPD) data at T=295 K shows that the sample is tetragonal (space group P4₂/n, a=8.0119(4) Å, c=8.0141(8) Å). Some additional magnetic diffraction peaks were found in the NPD pattern at 10 K, which can be accounted for by antiferromagnetic ordering of spins at the Mn sites. The magnetic unit cell is doubled in all three unit axes directions (a=b=15.9984(8) Å, c=16.012(2) Å) and the manganese moments are coupled antiferromagnetically along the unit cell axes. The total magnetic moment of Mn²⁺ is found to be 2.27(7) μ_B. The antiferromagnetic behaviour was confirmed from magnetisation measurements. The transition from a paramagnetic to an antiferromagnetic state takes place at 13.0±0.1 K.     

The location and shape of the conduction band minima in cubic silicon carbide

We have measured the inter-bound state excitation spectrum of the N_C donor in cubic β-SiC through the ‘two-electron’ transition satellites observed in the luminescent recombination of excitons bound to neutral N donors. Transitions are seen to p as well as s-like donor states although the transition oscillator strength is derived from interaction with the impurity core since parity is conserved through inter-valley scattering by p-like X phonons. The Zeeman splitting of a luminescence line involving the 2p± donor state yield the electron mass parameter m_t = 0.24 ± 0.01 m₀. This and the directly measured energy separations of the 2p₀ and 2p± states yields m_t/m₁ = 0.36 ± 0.01 with the static dielectric constant K = 9.92 ± 0.1. Mutually consistent central cell corrections of 1.1 and 8.4 meV are observed for the 2s(A₁) and 1s(A₁) donor states, the latter being in agreement with a recent estimate from electronic Raman scattering by Gaubis and Colwell. The ionization donor energy of the N_C donor, 53.6 ± 0.5 meV is consistent with earlier, less accurate estimates from donor-acceptor pair and free to bound luminescence. There is no evidence for a ‘camel's back’ conduction band structure in cubic SiC, unlike GaP. The two-phonon sidebands of the N_C donor exciton luminescence spectrum in SiC can be constructed by X and Г phonons only.     

Intensities of rotational lines in first overtone bands for axially symmetric molecules of the group C3v

The interaction of vibration and rotation is considered in the computation of the intensities of rotational lines in the first overtone bands of axially symmetric molecules of the group C_3v. The calculation utilizes the contact transformation method through first order of approximation as outlines by Hanson and Nielsen. General formulas for the intensities of the lines in the first overtone bands 2ν_n and 2ν_m are obtained, where n and m denote normal modes of species A₁ and E, respectively. It is found that to this order of approximation the usual selection rules ΔJ = 0, ±1 and ΔK = 0 are observed for the parallel overtone band 2ν_n. For the overtone band 2ν_m, the selection rules are more complicated, being ΔJ = 0, ±1; Δl_m = 0 and ΔK = 0, Δl_m = ±2 and $\text{Δ}\text{K = ?1}$, or Δl_m = ±2 and ΔK = ±2.     

Emission of ballistic photoelectrons from <Emphasis Type="Italic">p</Emphasis>-GaN(Cs,O) with the effective negative electron affinity

This paper reports on a study of the emission of ballistic photoelectrons from p-GaN(Cs,O) with an effective negative electron affinity. At photon energies less than the GaN band gap width, where emission of electrons originates from photoexcitation of surface and near-surface states, an increment in the energy of ballistic electrons is equal to that of exciting photons, which is substantiated by the dispersionless character of the initial states. At photon energies exceeding the band gap width, the excess energy of light is partitioned among the kinetic energies of ballistic photoelectrons and holes in accordance with their effective masses. This relation was used to determine the effective hole mass along the c axis of the GaN lattice of the wurtzite structure, which turned out to be m* _h‖ = (0.60 ± 0.15)m ₀.     

Band offsets of epitaxial Tm2O3 high-k dielectric films on Si substrates by X-ray photoelectron spectroscopy

Tm₂O₃ crystalline films have been deposited on Si (0 0 1) by molecular beam epitaxy (MBE). Band alignments of Tm₂O₃/Si gate stacks were studied by X-ray photoelectron spectroscopy (XPS). According to XPS measurements, it can be noted that a valence-band offset of ?3.1 ± 0.1 eV and a conduction-band offset of 2.3 ± 0.3 eV for the Tm₂O₃/Si heterojunction have been obtained. Based on analysis from O 1s energy-loss spectrum, the energy gap of Tm₂O₃ is determined to be 6.5 ± 0.3 eV. A relatively thicker interfacial SiO_x layer was observed for the as-annealed samples. However, no apparent change in band alignment has been observed for Tm₂O₃/Si heterojunction with the formation of interface layer, which has been discussed in detail.     

Measurement at different temperatures of absolute intensities,line half-widths,and broadening by Ar and N2 for the 3001II←0000 band of CO2

Absolute intensities, self-broadening coefficients, and foreign-gas broadening by Ar and N₂ were measured at temperatures of 197, 233 and 294 K for the 30⁰1_II←00⁰0 band of CO₂ at 6348 cm^-1. Also, the intensity parameters and total band intensity were calculated. We obtained for the vibration-rotation interaction factor the value F(m) = 1 + (0.26 ± 0.06) × 10^-2m + (0.92 ±0.32 × 10^-4 m²; for the purely vibrational transition moment, we found ¦R₀₀₀₀^3001_II¦к(0.4351 ± 0.0014)()10^b3 debye; and, for the total band intensity at STP conditions, S_band(30⁰1_II←00⁰0)_STP = 1255 ± 9 cm^-1 km^-1 atm^-1.Self-broadening coefficients at 197 and 294 K were also measured, as well as broadening by Ar and N₂. Foreign-gas-broadening efficiencies (Ar and N₂) were determined. Finally, a comparison is made with measurements by other authors and with theoretically calculated values.     

Magnetic ordering in uranium monophosphide

The magnetic ordering in uranium monophosphide (UP) has been studied by neutron diffraction from a single crystal in a magnetic field. UP orders at T_N ? 122 ± 0.1 K with the type-I antiferromagnetic structure (+-+-), the ordering taking place in a first-order transition. At T₀ = 22.5 K the ordered magnetic moment jumps from 1.7 μ_B to 1.9 μ_B. With a magnetic field H = 25 kOe applied along the [11&#x0304;10] direction, it is found that UP has the collinear single-$\text{K}$ type-I structure above T₀ and undergoes a first-order transition to the planar double-$\text{K}$ type-I structure, accompanied by a “moment jump” due to the change in the moment direction from <001> to <110>.     

Neutron diffraction studies of the magnetic ordering in the rare earth compounds TbNi2Si2, HoCo2Si2 and TbCo2Si2

Neutron diffraction studies and magnetic measurements on the compounds TbNi₂Si₂ (1), HoCo₂Si₂ (2) and TbCo₂Si₂ (3) revealed a collinear antiferromagnetic order below T_N = 10 ± 1 K (1), T_N = 13 ± 1 K (2) and T_N = 30 ± 2 K (3) with the rare earths moments oriented along the c-axis [m₀ = 8.8 ± 0.2 μ_B (1), m₀ = 8.1 ± 0.2 μ_B (2), m₀ = 8.8 ± 0.2 μ_B (3)] and the corresponding wavevector are $\text{k}\text{= [}\text{1}\text{2}\text{1}\text{2}\text{0] (1)}\text{and}\text{k}\text{= [ 0 0 1] (2) (3)}$. The magnetic structure of the compounds HoCo₂Si₂ and TbCo₂Si₂ consists of ferromagnetic layers perpendicular to the c-axis coupled antiferromagnetically (+?+?) while for TbNi₂Si₂ the ordering within (0 0 1) plane is antiferromagnetic and the planes (0 0 1) are indeed decoupled.     

Diffusivity mapping of the ovaries: Variability of apparent diffusion and kurtosis variables over the menstrual cycle and influence of oral contraceptives

PurposeWe aimed to investigate whether quantitative diffusivity variables of healthy ovaries vary during the menstrual cycle and to evaluate alterations in women using oral contraceptives (OC).MethodsThis prospective study (S-339/2016) included 30 healthy female volunteers, with (n = 15) and without (n = 15) intake of OC between 07/2017 and 09/2019. Participants underwent 3T diffusion-weighted MRI (b-values 0–2000 s/mm²) three times during a menstrual cycle (T1 = day 1–5; T2 = day 7–12; T3 = day 19–24). Both ovaries were manually three-dimensionally segmented on b = 1500 s/mm²; apparent diffusion coefficient (ADC) calculation and kurtosis fitting (D_app, K_app) were performed. Differences in ADC, D_app and K_app between time points and groups were compared using repeated measures ANOVA and t-test after Shapiro-Wilk and Brown-Forsythe test for normality and equal variance.ResultsIn women with a natural menstrual cycle, ADC and kurtosis variables showed significant changes in ovaries with the dominant follicle between T1 vs T2 and T1 vs T3, whilst no differences were observed between T2 vs T3: ADC ± SD for T1 1.524 ± 0.160, T2 1.737 ± 0.160, and T3 1.747 ± 0.241 μm²/ms (p = 0.01 T2 vs T1; p = 1.0 T2 vs T3, p = 0.003 T3 vs T1); D_app ± SD for T1 2.018 ± 0.140, T2 2.272 ± 0.189, and T3 2.230 ± 0.256 μm²/ms (p = 0.003 T2 vs T1, p = 1.0 T2 vs T3, p = 0.02 T3 vs T1); K_app ± SD for T1 0.614 ± 0.0339, T2 0.546 ± 0.0637, and T3 0.529 ± 0.0567 (p < 0.001 T2 vs T1, p = 0.86 T2 vs T3, p < 0.001 T3 vs T1). No significant differences were found in the contralateral ovaries or in females taking OC.ConclusionPhysiological cycle-dependent changes in quantitative diffusivity variables of ovaries should be considered especially when interpreting radiomics analyses in reproductive women.     

High resolution measurements of the line positions and strengths of the 2ν2 band of H2CO

Spectra of the 2ν₂ band of formaldehyde have been obtained with high resolution (0.035 cm^?1). Measurements were made with path lengths of 8, 16, and 24 m and at sample pressures from 0.1 to 0.3 mm Hg at room temperature (～296°K). From these data, the following constants were determined for the 2ν₂ band in wavenumber units: v₀=3471.718±0.004,A=9.3958±030013,B=1.28100±0.00024,C=1.11662±0.00024, Tbbb=-12.8±0.5×10^-6,Taabb=60±5×10^-6. The line strengths were also obtained from the data. The strengths were analyzed to determine the band strength and the rotational factors. At 296°K, the strength of the 2ν₂ band was found to be 15.5 ± 0.9 cm^?1/(cm·atm).     

Characterization of CBD-CdSe1-ySy deposited at low-temperature for photovoltaic applications

We present the structural and optical characterization of cadmium selenide sulphur (CdSe_1-yS_y) deposited by chemical bath deposition (CBD) technique at low-temperature (20 ± 2 °C). The sulphur molar fraction is varied from 0 to 42.13%. The chemical stoichiometry is estimated by energy-dispersive X-ray spectroscopy (EDS). The CdSe_1-yS_y shows hexagonal wurtzite crystalline phase, which was found by X-ray diffraction (XRD) analysis and it was confirmed by Raman spectroscopy. The average grain size of the CdSe_1-yS_y films was ranged from 1.20 to 1.68 nm that was determined by Debye-Scherrer equation from W(002) direction and it was confirmed by high resolution transmission electron microscopy (HRTEM). This average grain size indicates a high quantum confinement because of it is smaller than the Bohr radii of CdS (2.8 nm) and CdSe (4.9 nm). Raman spectra show two dominant vibrational bands about 208 and 415 cm⁻¹ associated at CdSe-1LO-like and CdSe-2LO-like. By transmittance measurements at room temperature are found that the optical band gap energies vary from 1.86 to 2.16 eV in the range of investigated sulphur molar fraction. Room temperature photoluminescence shows radiative bands in the visible range and a dominant band in the UV range, approximately 3.0 eV, which can be associated with a radiative transition, bound exciton to donor impurity.     

Intensities of rotational lines in combination bands for axially symmetric molecules of the group C3v

The interaction of vibration and rotation is considered in the computation of the intensities of rotational lines in the combination bands of axially symmetric molecules of the group C_3v. The calculation utilizes the contact transformation method through first order of approximation as outlined by Hanson and Nielsen. General formulas for the intensities of the lines in the parallel combination band (ν_n + ν_n′) and perpendicular combination band (ν_m + ν_n) are obtained. It is found that to this order of approximation the usual selection rules ΔJ = 0, ±1 and ΔK = 0 are observed for the parallel combination band. For the perpendicular combination band the selection rules are more complicated, being ΔJ = 0, ±1, Δl_m = +1 and ΔK = +1 or ?2, Δl_m = ?1 and ΔK = ?1 or +2, Δl_m = ±3 and ΔK = 0. Specific intensity formulas are then given for the (ν₁ + ν₃) parallel and (ν₂ + ν₃) perpendicular combination bands of ammonia.     

Optical investigation of strain-balanced superlattices

A series of strain-balanced GaInAs/AlInAs superlattices were investigated using optical spectroscopy. Three sets of excitonic Landau levels could be resolved in magneto-absorption spectra enabling estimates to be made for the reduced effective masses of the first and second electron to heavy hole (0.040±0.001m_eand 0.034 ± 0.002m_e) and the first electron to light hole (0.053 ±  0.002m_e) excitons. Enhancement in the light hole in-plane effective mass, relative to the heavy hole, is shown to result from the tensile strain in the quantum wells. Temperature-dependent photoluminescence measurements of these samples show evidence of thermal excitation of carriers between the first light and heavy hole states. The activation energy of this process compares well with the separation of the first heavy and light holes confined levels found from low-temperature absorption measurements in two structures with energy splitting of ∼40 meV and <10 meV respectively.     

Interfacial electronic structure of molybdenum oxide on the fullerene layer,a potential hole-injecting layer in inverted top-emitting organic light-emitting diodes

The interfacial electronic structures of molybdenum oxide (MoO_x) deposited on fullerene (C₆₀) which could be used as a hole-injecting layer in inverted top-emitting organic light-emitting diodes (TE-OLEDs) were investigated by photoemission spectroscopy. The hole-injecting barrier height (Φ_B^h) at each interface investigated by an ultraviolet photoemission spectroscopy was reduced to from 1.4 to 0.1 eV as the thickness of MoO_x (Θ_MoOx) was increased from 0.1 to 5.0 nm on C₆₀. In these interface system, the sign of vacuum-level shift, highest occupied molecular orbital (HOMO)-level shift, and core-level shifts were all positive indicating that the interface mechanism is attributed to the work-function differences due to a band bending at these interfaces. Moreover, the near-edge X-ray absorption fine structure spectra at carbon K-edge did not show any structural modification as well as any chemical reaction at the MoO_x-on-C₆₀ interfaces when Θ_MoOx was changed on C₆₀. From these results, the inverted TE-OLED with C₆₀ (5.0 nm)/MoO_x (5.0 nm) showed the power efficiency of 1.7 lm/W at a luminance of about 1000 cd/m² and the maximum luminance of about 76.000 cd/m² at the bias voltage of 11.0 V. It exhibited the highest performance among the inverted TE-OLEDs fabricated as a function of MoO_x thickness from 0 to 5.0 nm.