Systematic search of the rotation-compatible polar phases in perovskite oxides: A first-principles study

In many perovskite oxides, ferroelectricity is intimately related to octahedral rotation patterns, which can suppress or enhance polar distortions. Using first-principles density functional theory, we investigate the relation between octahedral rotation patterns and polar instability. Based on the rotation patterns commonly observed in perovskite oxides, we present a workflow that allows to systematically and efficiently search for the unstable polar phonon modes and identify metastable polar structures. We apply the workflow to investigate rotation-pattern-dependent polar phases of CaSnO₃ and find metastable polar structures by changing rotation patterns. Further investigation of the polar R3c structures shows sizable polarization comparable to the conventional ferroelectrics. We discuss substrate materials having the potential to stabilize the polar structure. Our work provides an efficient way to identify new polar phases by changing the octahedral rotation patterns, which will be useful to design new functional materials in the thin-film/substrate configuration utilizing interfacial coupling.     

First-principles study of transition metal linear monoatomic chains adsorption on boron nitride nanotube

Structural, electronic and magnetic properties of six 3d transition metals (TM=V, Cr, Mn, Fe, Co and Ni) linear monoatomic chains adsorbed on the (5,5) boron nitride nanotube (BNNT) at five different sites have been investigated by first-principle calculations. The results indicate all TM chains can be spontaneously adsorbed on the outer surface of the BNNT. The stable adsorption sites are different for different TM chains. All TM chains can be adsorbed on the N site, while the adsorption on the Z site is unstable. The dispersion character occurs in energy band curves of stable TM/BNNT systems and bring about the band gap disappearance in comparison with that of pure (5,5) BNNT. Interestingly, the TM/BNNT systems with nearly half-filled 3d metals V and Cr at H and N sites, as well as Mn at A site show a half-metal character and are usable in spintronics devices. The different electronic properties of BNNT can also be achieved through decorations of the same TM chain on different sites. The TM chain adsorbed BNNT systems exhibit high stability, promising electronic properties and high magnetic moments, which may be useful for a wide variety of next-generation nanoelectronic device components.     

V2CN2负载过渡金属双原子电催化固氮的第一性原理研究

电催化剂固氮能够在温和条件下催化氮气还原制氨.本工作基于第一性原理计算,系统地探究了分散在二维V₂CN₂上过渡金属二聚体(Fe, Mo, Ru)形成的双原子催化剂用于电催化固氮的可行性.双原子的协同作用使氮气得到较好的活化.吉布斯自由能计算表明,在V₂CN₂负载双铁原子(Fe₂@V₂CN₂)体系进行的催化反应过电位最低,仅为0.25 eV.进一步的分子动力学计算表明Fe₂@V₂CN₂具有较好的结构稳定性,并且该体系能很好的抑制HER反应的发生.通过与Mo₂@V₂CN₂,Ru₂@V₂CN₂体系的比较可知,氮气分子的吸附构型以及HER反应的竞争对催化剂的选择影响很大.我们的计算能够为双原子催化剂的设计提供更多的依据.     

First-principles study on the structural and electronic properties of ultrathin ZnO nanofilms

Using first-principles density-functional calculations, we have studied the structural and electronic properties of ultrathin ZnO {0001} nanofilms. The structural parameters, the charge densities, band structures and density of states have been investigated. The results show that there are remarkable charge transfers from Zn to O atoms in the ZnO nanofilms. All the ZnO nanofilms exhibit direct wide band gaps compared with bulk counterpart, and the gap decreases with increased thickness of the nanofilms. The decreased band gap is associated with the weaker ionic bonding within layers and the less localization of electrons in thicker films. A staircase-like density of states occurs at the bottom of conduction band, indicating the two-dimensional quantum effects in ZnO nanofilms.     

First-principles study on structural,electronic and ferroelectric properties of Bi2VO5.5 compound

A first-principles investigation of the origin of ferroelectricity in the Aurivillius compound Bi₂VO_5.5 is presented. Calculations with the density functional theory, in conjunction with the modern theory of polarization, allowed us to study the structural, electronic, and polar properties of two configurations built with oxygen vacancies, causing a charge imbalance and a subsequent displacement of the ions, generating two maximum polarizations, one of 14.75 μC/cm² and one of 4.31 μC/cm² along [011] direction. Electron localization function schemes were used to identify the asymmetry of charges in (001), (010) and (100) planes. The results obtained in this study establish that the origin of ferroelectricity is due to the displacement of the ions caused by oxygen vacancies and the asymmetric distribution of the isolated pair of Bi ions. On the other hand, the bandgap calculations and the results of P_s establish that Bi₂VO_5.5 is a candidate ferro-photovoltaic material.     

First-principles study of spin-density waves in Fe/Cr and V/Cr multilayers

A first-principles electronic structure calculation for Fe/Cr and V/Cr multilayers is performed, and spin-density wave order in the Cr layer is investigated. It is found that for a sufficiently large spacer thickness of the Cr layer the spin-density wave order grows spontaneously and becomes similar to that in bulk Cr in the vicinity of the middle of the Cr layer.     

闪锌矿结构AlN、AlP、AlAs和AlSb电子结构和光学性质的第一性原理研究

本文采用基于密度泛函理论下的第一性原理平面波赝势从头算量子力学方法,对闪锌矿结构AlN、AlP、AlAs和AlSb的电子结构和光学性质进行了研究。分析比较了这些化合物的能带结构、态密度、介电函数及折射率等性质,总结Al与不同Ⅴ族元素形成化合物时的性质变化规律。结果表明,四种材料有着相似的能带结构,都是间接带隙宽禁带半导体,但是在导带底AlN的能态结构与其它三种材料明显不同。随着从AlN到AlSb的变化,光学性质曲线发生红移。     

过渡金属(Ni)掺杂ZnV2O4的第一性原理计算

采用基于密度泛函理论下的MS软件模拟了过渡金属Ni掺杂ZnV₂O₄前后的能带结构、态密度以及光学性质.结果表明：ZnV₂O₄具有间接的光学跃迁且能带间隙为0.355 eV,Ni掺杂后能带间隙增加为0.785 eV,且带隙类型不变,引入的Ni-3d轨道电子对ZnV₂O₄的价带和导带组成提供了较大贡献.光学性质结果表明ZnV₂O₄为一种低介电材料,在可见光区的吸收系数和折射率较低,主要表现为紫外吸收.掺杂Ni后,在可见光区的吸收特性和光电导率均增大,有效改善了ZnV₂O₄在可见光区的光电性能.     

MC与$lt;i$gt;M$lt;/i$gt;$lt;sub$gt;$lt;i$gt;n$lt;/i$gt;+1$lt;/sub$gt;$lt;i$gt;AC$lt;/i$gt;$lt;sub$gt;$lt;i$gt;n$lt;/i$gt;$lt;/sub$gt;稳定性与电子特征的第一性原理研究

研究MC与M_n+1AC_n(M=Sc, Ti, V, Cr, Mn; A=Al, Si, P, S; n=1, 2, 3)结构的稳定性与电子特征有利于探究三元层状结构M_n+1AC_n稳定性的内在原因和设计新型M_n+1AC_n结构. 第一性原理计算研究表明, M-3d与C-2p轨道间的电子转移对MC与M_n+1AC_n 的形成焓有较大影响. 供电子能力较强的前过渡金属可以形成稳定的MC结构. 计算结果显示, MC结构是缺电子体系, 其趋向于与具有一定供电子能力的MA结构结合形成M_n+1AC_n. 与M₂PC和M₂SC 相比, M₂AlC和M₂SiC可以更为容易地被分离成二维 M₂C结构. 关键词： MAX相结构 第一性原理 电子结构 过渡金属碳化物     

提高单层GeSe对H2O气体传感性能的第一性原理研究

采用第一性原理计算方法,通过在单层GeSe上施加双轴向应变、外加电场、掺Ag等途径来探索提高单层GeSe对H₂O分子传感性能的有效方法,并从微观角度阐明内在机理.计算结果表明,-1.0 V/?的外加电场能有效降低H₂O分子在单层GeSe的吸附能并使二者之间的电荷转移量增加11倍,显著提高了单层GeSe对H₂O分子的响应速度和敏感性.研究结果为进一步设计并制成二维GeSe基湿度传感器提供了理论依据.     

First-principles study of the electronic structure and magnetism of SrFe0.5Ru0.5O2

We study the electronic structures and magnetism of SrFe_0.5Ru_0.5O₂ by first-principles calculations in the framework of density functional theory (DFT) with generalized gradient approximation plus on site repulsion (GGA+U). The DFT calculations were carried out with ten kinds of Fe-site doping form. Calculations show that the d-orbital electronic configurations of Fe²⁺ and Ru²⁺ ions are (d_z²)²(d_yzd_xz)²(d_xy)²(d_x²_−y²)¹ and (d_z²)²(d_yzd_xz)³(d_xy)¹(d_x²_−y²) , respectively, which are independent of the doping form. The degenerated (d_xzd_yz) orbitals of Ru²⁺ ions are occupied by three electrons, so it gives rise to the Jahn–Teller distortion. The calculated magnetic moments of Fe²⁺ and Ru²⁺ ions are 3.7 μ_B and 1.6 μ_B, respectively. The exchange parameters including nearest neighbor (NN) ions and next nearest neighbor (NNN) ions are calculated by using Heisenberg model and the magnetic frustration in the ordered structure is explained by the competition of the exchange parameters. We also study the external pressure effect on the compound. A pressure-induced orthorhombic to tetragonal structure transition accompanied by an insulator to half-metal transition and an antiferromagnetic (or spin glass) to ferromagnetic state transition is observed.     

First-principles study on structural and electronic properties of AlNSix heterosheet

Under generalized gradient approximation (GGA), the structural and electronic properties of AlN and Si sheets, hydrogen terminated AlN and Si nanoribbons with hexagonal morphology and 2, 4, 6 zigzag chains across the ribbon width and the hexagonally bonded heterosheets AlNSi_x (x=2, 4, and 6) consisting of hexagonal networks of AlN (h-AlN) strips and silicene sheets with zigzag shaped borders have been investigated using the first-principles projector-augmented wave (PAW) formalism within the density function theory (DFT) framework. The AlN sheet is an indirect semiconductor with a band gap of 2.56 eV, while the Si sheet has a metallic character since the lowest unoccupied conduction band (LUCB) and the highest occupied valence band (HOVB) meet at one k point from Γ to Z. In the semiconductor 6-ZAlNNR, for example, the states of LUCB and HOVB at zone boundary Z are edge states whose charges are localized at edge Al and N atoms, respectively. In metallic 6-ZSiNR, a flat edge state is formed at the Fermi level E_F near the zone boundary Z because its charges are localized at edge Si atoms. The hybridizations between the edge states of h-AlN strips and silicene sheets result in the appearance of border states in the zigzag borders of heterosheets AlNSi_x whose charges are localized at two atoms of the borders with either bonding or antibonding π character.     

稀土元素(Ce/Pr/Nd)掺杂Mn_4Si_7的第一性原理计算

利用第一性原理,对稀土元素Ce、Pr或Nd掺杂Mn_4Si_7前后的几何结构、电子结构和光学性质进行了计算与分析.结果表明,掺杂后Mn_4Si_7晶格常数变大,禁带宽度明显减小,由于稀土元素特殊的4f层电子的影响,在费米能级附近出现了杂质能级.掺杂后Mn_4Si_7的介电函数虚部、吸收系数的主峰均出现红移,红外光区的光跃迁强度明显增强,光吸收系数和光电导率均增大.说明掺杂稀土元素Ce、Pr或Nd后改善了Mn_4Si_7在红外光区的光电性能.     

不同浓度下V掺杂Mg2Si的第一性原理研究

本文用基于密度泛函理论的超软赝势平面波方法,分别计算了四种V掺杂模型Mg_2-xV_xSi(x=0,0.25,0.5,0.75)的电子结构和光学性质,并对其能带图、态密度图和光学性质进行了分析.结果表明,V掺杂之后会使Mg₂Si由其原本的半导体性变为半金属性,在费米能级处出现了杂质能级,态密度图也显示V元素的3d轨道的贡献在费米能级附近占据主导地位,Mg₂Si的光学性质随着V元素的掺入也发生了改变.该文为Mg₂Si材料在电子器件和光学器件方面的应用提供了理论依据.     

First-principles study on the structural,electronic and optical properties of BiOX (X=Cl,Br, I) crystals

In order to investigate systematically the structural, electronic and optical properties of bismuth oxyhalides BiOX (X=Cl, Br, I) semiconductors, the lattice constants, structural characteristics, band structures, densities of states, atomic charge populations and optical properties of BiOX crystals have been calculated using first-principles based on DFT. The calculated indirect band gaps of BiOCl, BiOBr and BiOI crystals are 2.50, 2.10 and 1.59 eV, respectively. The analysis of densities of states and atomic charge populations for BiOX crystals indicates that, (a) the valance band maximum is mainly contributed to O 2p and X np states and the Bi 6p states dominate the conduction band minimum; (b) the contribution of X ns states obviously increases with the increase of X atomic numbers, and the dispersive energy level becomes more and more significant and (c) the sequence of covalent bonding strength between atoms is Bi–O >Bi–I>Bi–Br>Bi–Cl. In addition, the calculated absorption edges of the absorption coefficients I(ω) for BiOCl, BiOBr and BiOI crystals are 355, 448 and 645 nm, respectively, which agree well with our experimental measurements of 376, 442 and 628 nm and the previous reported results of 370, 440 and 670 nm.     

压力下CaN_2结构稳定性和电子结构的第一性原理研究

通过运用基于密度泛函理论的第一性原理计算方法结合广义梯度近似对压力下CaN_2的结构稳定性和电子结构进行了理论研究.对结构稳定性的研究表明,ZnCl_2型结构是CaN_2在环境压力下最稳定的结构,而实验上观察到的CaC_2-I型结构是CaN_2高压下(8.7 GPa)的稳定性结构.在50 GPa的压力范围内,CaN_2将发生从ZnCl_2型结构到ThC_2型结构再到CaC_2-I型结构的两次压致结构相变,其相变压力分别为0.81 GPa和8.77 GPa.而对电子结构的研究表明ZnCl_2型、ThC_2型和CaC_2-I型三种结构的CaN_2都表现出了金属特征,三种结构CaN_2当中Ca-N键的离子-共价性特征和N原子间的N=N双键特征得到了确认.     

密度泛函理论研究硫族元素取代对单层Ag2S结构和电子性质的影响

本文利用第一性原理计算讨论了硫族元素掺杂单层Ag₂S的缺陷形成能和电子性质.缺陷形成能反映了在富Ag条件下的掺杂更容易.计算得到的带隙、Mulliken布居和态密度展示出了其相应结构的电子性质.与纯单层的Ag₂S相比,Se/Te掺杂Ag₂S后的带隙显示出其电导率变化不大.基于Mulliken原子和键布居,研究了硫族元素掺杂后Ag₂S中的共价性.此外,通过讨论态密度,分析了能级的移动和电子的贡献.     

Charge transfer transitions in the transition metal oxides ABO4:Ln and APO4:ln (A=La, Gd, Y, Lu, Sc; B=V, Nb, Ta; Ln=lanthanide)

We have compiled and analyzed optical and structural properties of lanthanide doped non-metal oxides of the form APO₄:Ln³⁺ with A a rare earth and of transition metal oxides with formula ABO₄:Ln³⁺ with B a transition metal. The main objective is to understand better the interrelationships between the band gap energy, the O²⁻→Ln³⁺ charge transfer energy, and the Ln³⁺→B⁵⁺ inter-valence charge transfer energy. Various models exist for each of these three types of electron transitions in inorganic compounds that appear highly related to each other. When properly interpreted, these optically excited transitions provide the locations of the lanthanide electron donating and electron accepting states relative to the conduction band and the valence band of the hosting compound. These locations in turn determine the luminescent properties and charge carrier trapping properties of that host. Hence, understanding the relationship between the different types of charge transfer processes and its implication for lanthanide level location in the band gap is of technological interest.     

First-principles study of monolayer and bilayer honeycomb structures of group-IV elements and their binary compounds

By using first-principles pseudopotential method, we investigate the structural, vibrational, and electronic properties of monolayer and bilayer honeycomb structures of group-IV elements and their binary compounds. It is found that the honeycomb structures of Si, Ge, and SiGe are buckled for stabilization, while those of binary compounds SiC and GeC containing the first row elements C are planar similar to a graphene sheet. The phonon dispersion relations and electronic band structures are very sensitive to the number of layers, the stacking order, and whether the layers are planar or buckled.