Thermoelectric and optical properties of CuAlO2 synthesized by direct microwave heating

A single phase of delafossite CuAlO₂ (CAO) was successfully synthesized by a 600 W microwave radiation for 20 min. The CAO sample was composed of quite distorted single-crystalline plates with 200–350 nm thick. Its atomic vibrations were detected at 760 and 550 cm⁻¹ belonging to Al–O and Cu–O stretching, respectively. The direct and indirect energy gaps were respectively determined to be 3.9 and 2.9 eV. The photoluminescence (PL) at room temperature was at 585 nm (2.12 eV) corresponding to the indirect energy gap and at 760 nm (1.63 eV) corresponding to the p-type native defect. For its thermoelectric (TE) properties, the Seebeck coefficient (S) was positive value, with holes as the majority of charge carriers. By increasing of the test temperature, both the electrical resistivity and absolute value of Seebeck coefficient were decreased, but the power factor was in the opposite manner. The dimensionless figure of merit (ZT) of the crystalline CAO was evaluated to be the maximum of 9 × 10⁻³ at 1073 K.     

Keggin结构纳米硅钨酸铵的室温固相合成与物性

首次以H4SiW12 O40·2 2H2 O和 (NH4) 2 C2 O4·H2 O为原料 ,室温固相反应合成出 (NH4) 4 SiW12 O40 纳米微粒 ;用元素分析、FTIR确定产物的组成和结构 ;XRD、TEM和BET对产物的形貌、晶粒尺寸和比表面积进行了表征 ;TG DTA确定了产物的稳定温区 .结果表明 ,产物为纳米粒子 ,平均粒径为 6 0nm ,比表面积为 10 8.7m2 /g ,在 4 30℃以下具有良好的热稳定性 .在固相反应中 ,研磨和放热反应热效应能加快反应物扩散速率和生成物成核速率 ,使产物粒径减小 ;反应物含有结晶水和生成物H2 C2 O4·2H2 O ,对形成小粒径的 (NH4) 4 SiW12 O40 纳米粒子起关键作用 .     

Structural and magnetic properties of NiZn ferrite films with high saturation magnetization deposited by magnetron sputtering

NiZn ferrite films with well-defined spinel crystal structure were in situ fabricated by radio frequency magnetron sputtering at room temperature. The microstructures and static magnetic properties of the films’ dependence on the partial pressure ratio of argon to oxygen gas were investigated. Scanning electron microscope images indicated that all the films consisted of particles nanocrystalline in nature and the sizes increase as the ratio increases in the range of 10-25 nm. A large saturation magnetization (237.2 emu/cm³) and a minimum of coercivity (68 Oe) were obtained when the ferrite film was deposited in the ratio of 4:1. The complex permeability values (μ = μ′−iμ″) of the film were measured at frequency up to 5 GHz. It was shown that the film exhibited a large real part of permeability μ′ of 18 and a very high resonance frequency f_r of 1.2 GHz. The results suggested that the NiZn ferrite film as-deposited in the ratio of 4:1 may be promised as magnetic medium in the application of integrated circuits operating at microwave frequencies.     

氧化钨纳米线-单壁碳纳米管复合型气敏元件的室温NO2敏感性能与机理

利用溶剂热法合成了一维的氧化钨纳米线, 通过掺入适量单壁碳纳米管(SWNT)制备了基于氧化钨纳米线-SWNT 复合结构的室温气敏元件并评价了其对NO₂气体的室温敏感性能. 利用X射线与扫描电子显微镜表征了材料的微结构, 结果表明, 合成的氧化钨纳米线具有单斜的W₁₈O₄₉结构, 复合材料中SWNT被包埋在氧化钨纳米线中间. 气敏性能测试结果表明, 氧化钨纳米线-SWNT复合结构气敏元件在室温下对NO₂气体表现出了高的灵敏度和超快的响应特性; 较低的SWNT掺入量对获得好的气敏性能有利. 分析了基于复合结构材料气敏元件的可能的气敏机理, 认为元件良好的室温敏感性能与SWNT掺入在复合结构材料中引入大量的贯穿气孔和p-n异质结有关.     

紫外Sc_2O_3薄膜的光学和结构性能表征及其激光作用下的损伤机理

利用电子束蒸发方法,在不同沉积温度(50~350℃)下制备了Sc2O3薄膜。分别用分光光度计,小角掠入射X射线衍射仪和轮廓仪测试了薄膜样品的光谱、微结构和表面粗糙度信息,并用薄膜分析软件Essential Macleod计算了Sc2O3薄膜的折射率和消光系数。结果表明:随着沉积温度升高,Sc2O3薄膜结晶程度增强,晶粒尺寸增大,且较高的沉积温度有利于获得较高的折射率。最后用355 nm,8 ns的三倍频Nd:YAG激光器测试了其激光损伤阈值(LIDT),最大值为2.6 J/cm2,且阈值与薄膜的消光系数、表面粗糙度、光学损耗均呈现相反的变化趋势。用光学显微镜和扫描电子显微镜表征了该薄膜的破坏形貌,详细分析了薄膜在不同激光能量作用下破坏的发展过程,以及Sc2O3薄膜在355 nm紫外激光作用下LIDT与制备工艺的关系,重点分析了355 nm激光作用下薄膜的破坏机理。     

离子束增强沉积VO_2多晶薄膜的温度系数

用改进的离子束增强沉积方法和恰当的退火从V2 O5粉末直接制备了VO2 多晶薄膜 .实验测试表明 ,薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好 ,薄膜的电阻温度系数 (TCR)最高可达 4 2 3% K .从成膜机理出发 ,较详细地讨论了离子束增强沉积VO2 多晶薄膜的TCR高于VOx 薄膜的TCR的原因 .分析认为 ,单一取向的VO2 结构使薄膜晶粒具有较高的电导激活能 ,致密的薄膜结构减少了氧空位和晶界宽度 ,使离子束增强沉积VO2 多晶薄膜结构比其他方法制备的VOx 薄膜更接近于单晶VO2 是其具有高TCR的原因     

离子束增强沉积VO2多晶薄膜的温度系数

用改进的离子束增强沉积方法和恰当的退火从V2O5粉末直接制备了VO2多晶薄膜.实验测试表明，薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好，薄膜的电阻温度系数（TCR）最高可达4.23%/K.从成膜机理出发，较详细地讨论了离子束增强沉积 VO2多晶薄膜的TCR高于VOx薄膜的TCR的原因.分析认为，单一取向的VO2结构使薄膜晶粒具有较高的电导激活能，致密的薄膜结构减少了氧空位和晶界宽度，使离子束增强沉积 VO2多晶薄膜结构比其他方法制备的VOx薄膜更接近于单晶VO2是其具有高TCR的原 关键词： VO2多晶薄膜 离子束增强沉积 热电阻温度系数     

Synthesis of ZnO-SnO2 composite oxides by CTAB-assisted co-precipitation and photocatalytic properties

ZnO-SnO₂ composite oxides with various molar ratios of Sn:Zn have been synthesized at different calcination temperatures via a facile cetyltrimethylammonium bromide (CTAB)-assisted co-precipitation method with Zn(NO₃)₂·6H₂O and SnCl₄·5H₂O as starting materials. XRD, TEM, SEM and BET were employed to characterize the as-prepared samples. It has been found that amorphous intermediates appear between the evolutions of ZnO and SnO₂ crystals. The photocatalytic properties of the composite oxides were investigated using photocatalytic degradation of methyl orange as the probe reaction. The results show that the ZnO-SnO₂ composite oxide with a cube morphology exhibits the best photocatalytic activity, which was prepared with a molar ratio of Zn:Sn of 2:1 and calcination temperature of 700 °C.     

A significant enhancement in thermoelectric power factor of In2Te3 thin films by Se doping and Te composition tuning

Thermoelectric power factor of a material significantly relies on its electrical conductivity, thermal conductivity, and Seebeck coefficient. Herein, an attempt has been made to enhance the thermoelectric power factor of In₂Te₃ thin films by tuning their Te composition and via Se doping. The optimum Se-doping concentration and Te composition enhanced the power factor of pristine In₂Te₃ films by 14 and 7.4 times, respectively. The modified chemical composition, structural characteristics, and surface morphological features of In₂Te₃ films are observed to be pivotal in improving their thermoelectric power factor. Overall, this study offers a facile approach to control the thermoelectric power factor of In₂Te₃ thin films which is significant for their futuristic applications.     

制备条件及添加稀土对SO_4~(2-)/ZrO_2-Al_2O_3固体超强酸酸性影响的研究

用共沉淀法制备了SO4 2 -/ZrO2 -Al2 O3 固体超强酸 ,并采用低温陈化和添加稀土La对其制备方法进行改进 .通过样品催化正丁烷异构化反应考察了该固体超强酸中nZr和nAl的最佳配比为 1∶2 .该法制备的样品的IR显示 ,在 1393cm-1处的吸收峰强度较常温陈化样品大大增加 .XRD分析表明 ,低温陈化和加入稀土添加剂的样品在6 5 0℃焙烧温度下 ,出现了亚稳态的ZrO2 四方晶相的晶体是表面酸性和催化活性增加的微观原因 .样品催化合成八乙酸蔗糖酯反应结果同样证明 ,在相同的时间内 ,低温陈化和添加稀土添加剂的样品具有较好的催化活性     

紫外Sc2O3薄膜的光学和结构性能表征及其激光作用下的损伤机理

利用电子束蒸发方法,在不同沉积温度 (50~350 ℃)下制备了Sc2O3薄膜。分别用分光光度计,小角掠入射X射线衍射仪和轮廓仪测试了薄膜样品的光谱、微结构和表面粗糙度信息,并用薄膜分析软件Essential Macleod计算了Sc2O3薄膜的折射率和消光系数。结果表明：随着沉积温度升高,Sc2O3薄膜结晶程度增强,晶粒尺寸增大,且较高的沉积温度有利于获得较高的折射率。最后用355 nm,8 ns的三倍频Nd:YAG激光器测试了其激光损伤阈值（LIDT）,最大值为2.6 J/cm2,且阈值与薄膜的消光系数、表面粗糙度、光学损耗均呈现相反的变化趋势。用光学显微镜和扫描电子显微镜表征了该薄膜的破坏形貌,详细分析了薄膜在不同激光能量作用下破坏的发展过程,以及Sc2O3薄膜在355 nm紫外激光作用下LIDT与制备工艺的关系,重点分析了355 nm激光作用下薄膜的破坏机理。     

制备条件及添加稀土对SO42- /ZrO2 -Al2O3固体超强酸酸性影响的研究

用共沉淀法制备了SO4^2-/ZrO2-Al2O3固体超强酸，并采用低温陈化和 添加稀土La对其制备方法进行改进，通过样品催化正丁烷异构化反应考察了该固体超强酸中nZr和nAl的最佳配比为1：2，该法制备的样品的IR显示，在1393cm^-1处的吸收峰强度较常温陈化样品大大增加，XRD分析表明，低温陈化和加入稀土添加剂的样品在650℃焙烧温度下，出现了亚稳态的ZrO2四方晶相的晶体是表面酸性和催化活性增加的微观原因，样品催化合成八乙酸蔗糖酯反应结果同样证明，在相同的时间内，低温陈化和添加稀土添加剂的样品具有较好的催化活性。     

In situ formation of Al2O3-SiO2-SnO2 composite ceramic coating by microarc oxidation on Al-20%Sn alloy

In situ formation of Al₂O₃-SiO₂-SnO₂ composite ceramic coating on Al-20%Sn alloy was successfully fabricated in aqueous Na₂SiO₃ electrolyte by microarc oxidation technology. The compositions, structure, mechanical and tribological properties of the composite coating were detailed studied by scanning electron microscope, energy dispersive spectroscopy, X-ray diffraction, hardness tester and ball-on-disc friction tester. It is found that the species originating from the Al-20%Sn alloy substrate and the electrolyte solution both participate in reaction and contribute to the composition of the coating, which results in the generated coating firmly adherent to the substrate. The composite ceramic coating can greatly improve the microhardness and tribological property of Al-20%Sn alloy.     

放电等离子烧结制备ZrB2-SiC超高温陶瓷的力学性能及氧化行为

在服役环境中,超高声速飞行器表面与空气剧烈摩擦导致温度极高。超高温陶瓷相较于一般陶瓷而言具有高熔点和良好的抗氧化烧蚀性能,是目前极具前景的热防护材料之一。采用放电等离子两步烧结工艺将ZrB2纳米粉末和SiC粉末在1700℃下制备超高温陶瓷材料ZrB2-20%SiC,通过纳米压痕微观实验、三点弯实验研究其力学性能及其在高温环境下的氧化行为,着重分析1000、1200、1400和1600℃4种不同氧化温度下ZrB2-20%SiC超高温陶瓷的氧化表面、氧化截面和氧化层厚度。结果表明:ZrB2-20%SiC超高温陶瓷的硬度为18 GPa,弹性模量为541 GPa,断裂韧性为5.7 MPa·m1/2;当氧化温度为1600℃时,超高温陶瓷内部的SiC由被动氧化转变为主动氧化,并且随着氧化温度升高,超高温陶瓷氧化层厚度与氧化温度呈正相关。     

封闭空间中易燃混合气体在HF和CO_2激光作用下的燃烧引发(英文)

研究了封闭圆柱石英腔中化学计量CH4∶O2混合气的燃烧试验。使用了非定域脉冲HF激光触发和直接使用脉冲CO2激光器助燃两种引燃方法。第二种引燃方法是使用小剂量的可以强烈吸收脉冲CO2激光辐射的SF6来加热易燃混合气。研究了燃烧过程,并确定了燃烧辉光的谱线特征。试验表明,即使在小体积反应器中,固定数量反应气的快速激光加热也能够极大地加速燃烧进程并达到混合气燃烧的爆炸模式。得到了阈值情况下沿腔轴的初始温度分布。     

Microstructure and mechanical properties of Al2O3-Al composite coatings deposited by plasma spraying

Al₂O₃ and Al₂O₃-Al composite coatings were prepared by plasma spraying. Phase composition of powders and as-sprayed coatings was determined by X-ray diffraction (XRD), while optical microscopy (OM) and scanning electron microscopy (SEM) were employed to investigate the morphology of impacted droplets, polished and fractured surface, and the element distribution in terms of wavelength-dispersive spectrometer (WDS). Mechanical properties including microhardness, adhesion and bending strength, fracture toughness and sliding wear rate were evaluated. The results indicated that the addition of Al into Al₂O₃ was beneficial to decrease the splashing of impinging droplets and to increase the deposition efficiency. The Al₂O₃-Al composite coating exhibited homogeneously dispersed pores and the co-sprayed Al particles were considered to be distributed in the splat boundary. Compared with Al₂O₃ coating, the composite coating showed slightly lower hardness, whereas the coexistence of metal Al phase and Al₂O₃ ceramic phase effectively improved the toughness, strength and wear resistance of coatings.     

封闭空间中易燃混合气体在HF和CO2激光作用下的燃烧引发

研究了封闭圆柱石英腔中化学计量CH4：O2混合气的燃烧试验。使用了非定域脉冲HF激光触发和直接使用脉冲CO2激光器助燃两种引燃方法。第二种引燃方法是使用小剂量的可以强烈吸收脉冲CO2激光辐射的sF6来加热易燃混合气。研究了燃烧过程,并确定了燃烧辉光的谱线特征。试验表明,即使在小体积反应器中,固定数量反应气的快速激光加热也能够极大地加速燃烧进程并达到混合气燃烧的爆炸模式。得到了阈值情况下沿腔轴的初始温度分布。     

Effect of RF power and sputtering pressure on the structural and optical properties of TiO2 thin films prepared by RF magnetron sputtering

TiO₂ thin films were deposited onto quartz substrates by RF magnetron sputtering. The samples deposited at various RF powers and sputtering pressures and post annealed at 873 K, were characterized using X-ray diffraction (XRD), micro Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy and photoluminescence (PL) spectroscopy. XRD spectrum indicates that the films are amorphous-like in nature. But micro-Raman analysis shows the presence of anatase phase in all the samples. At low sputtering pressure, increase in RF power favors the formation of rutile phase. Presence of oxygen defects, which can contribute to PL emission is evident in the XPS studies. Surface morphology is much affected by changes in sputtering pressure which is evident in the SEM images. A decrease in optical band gap from 3.65 to 3.58 eV is observed with increase in RF power whereas increase in sputtering pressure results in an increase in optical band gap from 3.58 to 3.75 eV. The blue shift of absorption edge in all the samples compared to that of solid anatase is attributed to quantum size effect. The very low value of extinction coefficient in the range 0.0544-0.1049 indicates the excellent optical quality of the samples. PL spectra of the films showed emissions in the UV and visible regions.     

High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.