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1.
张甦  杨秋红  李启笛 《无机化学学报》2023,39(10):1923-1930
采用固相合成法制备了NaBi(WO4)2(NBW)陶瓷,研究了NBW陶瓷的相结构、形貌、烧结特性和微波介电性能。NBW陶瓷在625~800℃烧结1~4 h能够致密化。X射线衍射表明在625~800℃烧结2 h的NBW陶瓷均为四方晶系白钨矿结构的单相陶瓷。随着烧结温度的提高,NBW陶瓷的介电常数、品质因数(Qf值)先增加后降低,谐振频率温度系数逐渐降低。经650℃烧结2 h获得的NBW陶瓷的介电常数为14.36,Qf值为16 503 GHz,谐振频率温度系数为-1.055×10-5-1。NBW陶瓷与银共烧反应生成Ag2W2O7相,而与Au、Al共烧具备化学兼容性。  相似文献   

2.
以硝酸锂、偏钒酸铵、硝酸钙、硝酸镁、正硅酸乙酯为原料,采用溶胶-凝胶法低温合成纳米CaMgSi2O6微波介质陶瓷粉体,研究了不同粒径粉体的烧结行为与微波介电性能。结果表明,通过在钙镁硅溶胶中引入锂钒烧结助剂可大大降低陶瓷粉体的晶相合成温度,干凝胶在750 ℃煅烧后可获得主晶相为CaMgSi2O6、分散性良好、粒径为78~98 nm的陶瓷粉体,可满足微型片式元器件用超薄陶瓷介质层的制备要求;该粉体在890 ℃烧结后获得致密结构的陶瓷,具有良好的微波介电性能:介电常数为7.68,品质因数为24 542 GHz,频率温度系数为-57.25×10-6-1。  相似文献   

3.
采用柠檬酸凝胶法两步热处理工艺制备了单相Ba2Ti9O20。干凝胶在750 ℃热处理得到了物相为BaTi5O11和Ba4Ti13O30、尺寸为30~50 nm的前驱体粉体。纳米前驱体具有高表面活性,促使单相Ba2Ti9O20在1 200 ℃热处理温度下形成。两步热处理所得的粉体比一步热处理所得的粉体具有更好的烧结和介电特性,两步热处理所得的粉体,在1 250 ℃烧结4 h,可获得理论密度为97%的Ba2Ti9O20微波介质陶瓷,其介电性能:εr=38.5,Qf=19 320 GHz,τf=8.7×10-6-1。  相似文献   

4.
通过调节B2O3‐Bi2O3‐ZnO‐Al2O3(BBZA)玻璃的添加量研究其对钛酸钡(BaTiO3)陶瓷烧结条件、晶体结构和介电性能的影响。结果表明:添加适量的BBZA玻璃能够有效地将BaTiO3陶瓷烧结温度由1350℃降至950℃,并使其致密化。同时,添加BBZA玻璃后,BaTiO3的晶体结构随着烧结温度的升高而发生转变(立方相→四方相)。另外,BBZA玻璃的引入使BaTiO3陶瓷的居里峰得到了有效的抑制和拓宽。陶瓷微观形貌显示,玻璃相均匀分布在BaTiO3晶粒表面。优化的BaTiO3陶瓷制备条件如下:BBZA添加量(质量分数)为2.0%,烧结温度为950℃。在该条件下制备的BaTiO3陶瓷介电常数达到1364,介电损耗低至1.2%。  相似文献   

5.
刘荣梅  马桂林  周丽  陈蓉 《化学学报》2005,63(6):491-496
以湿化学法制得Zr(OH)4和Sm(OH)3的共沉淀为前驱体, 在碱性介质中用水热法合成了(ZrO2)0.86(Sm2O3)0.14及(ZrO2)0.88(Sm2O3)0.12纳米粉体. 将纳米粉体在较低温度(1450 ℃)下烧结制得了致密的固体电解质陶瓷样品, 比通常高温固相反应法采用的烧结温度(>1600 ℃)降低了150 ℃以上. XRD测定结果表明, (ZrO2)0.86(Sm2O3)0.14纳米粉体及其烧结体均为立方相, 但(ZrO2)0.88(Sm2O3)0.12纳米粉体为立方相, 它的烧结体为立方相和单斜相的混合相. 用交流阻抗谱法、氧浓差电池法及氧泵(氧的电化学透过)法研究了(ZrO2)0.86(Sm2O3)0.14陶瓷样品在600~1000 ℃下的离子导电特性. 结果表明, 该陶瓷样品在600~1000 ℃下氧离子迁移数为1, 氧离子电导率的最大值为3.2×10-2 S•cm-1, 是一个优良的氧离子导体; 它的氧泵性能明显地优于YSZ.  相似文献   

6.
通过静电纺丝技术制备了多孔软硬磁Ni0.5Zn0.5Fe2O4/SrFe12O19复合纤维,利用综合热重分析仪(TG-DSC)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线能谱仪(EDS)和矢量网络分析仪(VNA)等对复合纤维的晶体结构、微观形貌和电磁性能进行了表征,研究了不同软硬磁质量比对纤维结构和性能的影响。结果表明:900℃下制备的复合纤维具有立体多孔结构,软硬磁质量比为1∶3时,复合纤维的比表面积达到55 m2·g-1。吸波性能测试结果显示,当吸波剂涂层厚度为3.5 mm时,复合纤维在10.6 GHz处反射损失(RL)值达到-31.9 dB,在2~18 GHz频率范围内,RL值小于-10 dB的吸收带宽达到10.5 GHz,覆盖了整个X波段(8.2~12.4 GHz)和Ku波段(12.4~18 GHz),显示出优异的宽波段吸收性能。  相似文献   

7.
共沉淀法合成Yb3+∶Y2O3纳米粉及透明陶瓷的性能   总被引:1,自引:0,他引:1  
以Y2O3为基质材料,掺杂不同含量的Yb3+,采用共沉淀法制备出性能良好的Yb3+∶Y2O3纳米粉,将粉体在1 700 ℃和真空度为1×10-3 Pa下烧结5 h得到Yb3+∶Y2O3透明陶瓷。用XRD、TEM、UV-Vis、FL分别对样品的结构、形貌和发光性能进行了研究。结果表明:Yb3+完全固溶于Y2O3的立方晶格中,Yb3+∶Y2O3粉体大小均匀,近似球形,尺寸约40~60 nm。Yb3+∶Y2O3透明陶瓷相对密度为99.7%,在波长600~800 nm范围内其透光率达到80%。Yb3+∶Y2O3透明陶瓷在950 nm处吸收线宽达到26 nm,在1 031 nm和1 076 nm处的发射线宽分别为13 nm和17 nm。  相似文献   

8.
本文研究了Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷的结构和介电性能的影响。X射线衍射(XRD)结果表明,Bi2O3的掺杂可以使陶瓷中Ag+被还原并析出,且银析出的量随Bi2O3掺杂量的增加而不断增加,这可能源自于Bi3+对Ag+的取代。在一定范围内增大Bi2O3掺杂量可提高Ag(Nb0.8Ta0.2)O3陶瓷的室温介电常数,降低介电损耗,并使温度系数向负值方向移动。当Bi2O3的掺杂量约为3.5wt%时,样品具有较大的介电常数(ε=672)和较小的介电损耗(tanδ=7.3×10-4)。  相似文献   

9.
CaTiO3纳米粉体溶胶-凝胶法合成、表征及介电特性   总被引:4,自引:0,他引:4  
采用无机盐溶胶-凝胶法制备了CaTiO3纳米粉体,采用TG-DTA、XRD、TEM等技术进行了表征,并探讨了CaTiO3纳米粉体烧结特性及介电效应。结果表明,干凝胶800 ℃低温煅烧可获得粒径分布较窄、平均粒径为60~70 nm的单相CaTiO3纳米粉。纳米CaTiO3粉具有较大的比表面积,使作为粉体烧结驱动力的表面能剧增,促使CaTiO3在1 200 ℃实现致密烧结,比固相法制备的微米粉烧结降低100~200 ℃,且具有较宽的烧结温区。与微米级粉体烧结体介电特性相比,纳米粉具有更高的Qf值。纳米CaTiO3粉制备的陶瓷在1 250 ℃烧结2 h,获得优良的介电性能:εr=172,Qf=4 239 GHz,τf=+7.68 × 10-4-1。  相似文献   

10.
在5% H2+95% N2V/V)还原气氛中1 500℃烧结4 h制备La0.1BixSr0.9-xTiO3x=0、0.05、0.075、0.1)陶瓷,并对其组成、显微结构和热电性能进行研究。结果表明:掺Bi试样的主晶相均为SrTiO3,当Bi掺杂量大于0.075时,样品中出现少量Bi2O3杂相;掺Bi试样的晶粒发育完全,形状规则,结合紧密,显示出Bi2O3良好的助烧效果。另外,Bi元素掺入使La0.1Sr0.9TiO3陶瓷的电导率和Seebeck系数绝对值显著增加,说明Bi元素的掺入可有效提高材料的载流子浓度和载流子迁移率。其中,x=0.075时试样的功率因子最大,在400℃时为692 μW·m-1·K-2。虽然其热导率比未掺杂Bi试样有所提高,x=0.075时试样的ZT值在500℃时仍可达0.172,比未掺杂Bi试样提高了130%。  相似文献   

11.
An experimental study on the conversion of NO in the NO/N2, NO/O2/N2, NO/C2H4/N2 and NO/C2H4/O2/N2 systems has been carried out using dielectric barrier discharge (DBD) plasmas at atmospheric pressure. In the NO/N2 system, NO decomposition to N2 and O2 is the dominating reaction; NO conversion to NO2 is less significant. O2 produced from NO decomposition was detected by an on-line mass spectrometer. With the increase of NO initial concentration, the concentration of O2 produced decreases at 298 K, but slightly increases at 523 K. In the NO/O2/N2 system, NO is mainly oxidized to NO2, but NO conversion becomes very low at 523 K and over 1.6% of O2. In the NO/C2H4/N2 system, NO is reduced to N2 with about the same NO conversion as that in the NO/N2 system but without NO2 formation. In the NO/C2H4/O2/N2 system, the oxidation of NO to NO2 is dramatically promoted. At 523 K, with the increase of the energy density, NO conversion increases rapidly first, and then almost stabilizes at 93–91% of NO conversion with 61–55% of NO2 selectivity in the energy density range of 317–550 J L−1. It finally decreases gradually at high energy density. A negligible amount of N2O is formed in the above four systems. Of the four systems studied, NO conversion and NO2 selectivity of the NO/C2H4/O2/N2 system are the highest, and NO/O2/C2H4/N2 system has the lowest electrical energy consumption per NO molecule converted.  相似文献   

12.
Nd2O3添加量对BaTiO3陶瓷介电性能的影响   总被引:4,自引:0,他引:4  
BaTiO3 ceramics doped with Nd2O3(the additive content was respectively 0.001,0.002,0.003,0.005,0.01,0.03mol)were prepared by Sol-Gel method. Effects of Nd2O3 contents on the dielectric constant (ε), the dielectric loss (tanδ) ,the Curie-temperature (TC) and the resistivity (ρ) of BaTiO3 ceramic were studied. When Nd2O3 content was 0.001mol and 0.002mol, the dielectric constant was increased obviously, but the dielectric loss was also increased. When Nd2O3 content was 0.003mol, the dielectric constant was increased, and the dielectric loss was decreased, which was suitable for application in condenser. The resistivity was decreased obviously with the increasing of Nd2O3 contents, the resistivity was the smallest when Nd2O3 content was 0.001mol. The Curie-temperature was also decreased with the increasing of Nd2O3 contents.  相似文献   

13.
溶胶凝胶法制备Nd2O3改性钛酸钡陶瓷的研究   总被引:13,自引:0,他引:13  
The technological condition for the preparation of BaTiO3 ceramics doped with Nd2O3 by Sol-Gel was deter-mined through orthogonal experiment. When nBa(Ac)2nTi(OC4H9)4nNd2O3nCH3(CH2)2CH2OHnH2O=1.00∶1.00∶0.003∶7.30∶37.04, pH=3.5,T=25℃,the light-yellow-transparent-stable solution and thorough transparent gel was generat-ed, the transforming time of solution to gel was 25h. The crystal structure and particle size of BaTiO3 ceramics doped with Nd2O3 were studied by SEM and X-ray respectively, the type of the crystal was tetragonal, the particle size was about 24.7nm. The dielectric constant (ε) and dielectric loss (tanδ) of BaTiO3 ceramics doped with Nd2O3 were determined between 104~106Hz, and the results showed that the dielectric constant was increased obviously, the dielectric loss was decreased clear and the resistivity (ρV) was also decreased noticeably.  相似文献   

14.
以CaCO3,CuO,TiO2,La2O3为反应物,NaCl,KCl为熔盐,通过熔盐法分别在700、750、800、850℃条件下合成Ca0.9La0.2/3Cu3Ti4O12陶瓷粉体。利用XRD和SEM分别对陶瓷粉体的物相结构和微观形貌进行了分析,并对其介电性能进行了测试。实验结果表明,随着合成温度的升高,陶瓷粉体的钙钛矿相含量逐渐增大,与传统固相法相比,熔盐法制备的粉体无团聚现象,耗时少。Ca0.9La0.2/3Cu3Ti4O12粉体制备的陶瓷在1 000℃烧结、测试频率在100 Hz~10 kHz时,获得优良的介电性能:介电常数大大超过104,介电损耗在0.1~0.47之间。  相似文献   

15.
The compound previously reported as Ba2Ti2B2O9 has been reformulated as Ba3Ti3B2O12, or Ba3Ti3O6(BO3)2, a new barium titanium oxoborate. Small single crystals have been recovered from a melt with a composition of BaTiO3:BaTiB2O6 (molar ratio) cooled between 1100°C and 850°C. The crystal structure has been determined by X-ray diffraction: hexagonal system, non-centrosymmetric space group, a=8.7377(11) Å, c=3.9147(8) Å, Z=1, wR(F2)=0.039 for 504 unique reflections. Ba3Ti3O6(BO3)2 is isostructural with K3Ta3O6(BO3)2. Preliminary measurements of nonlinear optical properties on microcrystalline samples show that the second harmonic generation efficiency of Ba3Ti3O6(BO3)2 is equal to 95% of that of LiNbO3.  相似文献   

16.
用液相反应-前驱物烧结法制备了Cr2(WO4)3和Cr2(MoO4)3粉体。298~1 073 K的原位粉末X射线衍射数据表明Cr2(WO4)3和Cr2(MoO4)3的晶胞体积随温度的升高而增大, 本征线热膨胀系数分别为(1.274±0.003)×10-6 K-1和(1.612±0.003)×10-6 K-1。用热膨胀仪研究了Cr2(WO4)3和Cr2(MoO4)3在静态空气中298~1 073 K范围内热膨胀行为,即开始表现为正热膨胀,随后在相转变点达到最大值,最后表现为负热膨胀,其负热膨胀系数分别为(-7.033±0.014)×10-6 K-1和(-9.282±0.019)×10-6 K-1。  相似文献   

17.
本文研究了Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷的结构和介电性能的影响。X射线衍射(XRD)结果表明,Bi2O3的掺杂可以使陶瓷中Ag+被还原并析出,且银析出的量随Bi2O3掺杂量的增加而不断增加,这可能源自于Bi3+对Ag+的取代。在一定范围内增大Bi2O3掺杂量可提高Ag(Nb0.8Ta0.2)O3陶瓷的室温介电常数,降低介电损耗,并使温度系数向负值方向移动。当Bi2O3的掺杂量约为3.5wt%时,样品具有较大的介电常数(ε=672)和较小的介电损耗(tanδ=7.3×10-4)。  相似文献   

18.
采用传统固相反应工艺,按化学计量比合成BaO-Al_2O3-SiO_2(BAS)-x%(w/w) Li_2O-Na_2O-B_2O3-SiO_2(LNBS)(x=0,1,2,3,4)陶瓷。研究不同LNBS烧结助剂添加量对BAS系微波介质陶瓷的结构和介电性能的影响。通过Clausius-Mossotti公式计算讨论了BAS理论与实验介电常数(εr)的差异。研究结果表明:LNBS烧结助剂中Li+进入钡长石Al3+位或单四元环(S4R)间隙,并产生了O_2-空位或Ba2+空位,从而促进BAS六方相向单斜相的转变。添加适量的LNBS烧结助剂后,BAS陶瓷的烧结温度从1 400℃降低到1 325℃,同时BAS陶瓷样品密度、品质因数(Qf)值以及频率温度系数(τf)得到改善。当x=1,烧结温度为1 325℃时,可获得综合性能相对较好的BAS陶瓷,其介电性能:Qf=35 199 GHz,εr=6.37,τf=-1.613×10-5℃-1。  相似文献   

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