Ultrahigh-efficiency TEM<Subscript>00</Subscript> diode-side-pumped Nd:YVO<Subscript>4</Subscript> laser

Ultrahigh-efficiency TEM₀₀ operation is demonstrated in a diode-pumped Nd:YVO₄ laser in a bounce amplifier geometry using a specially designed astigmatically optimised cavity configuration. Optical efficiency >68% is demonstrated and up to 27.1 W of output power for multimode operation. For single-mode TEM₀₀ operation, an output power of 23.1 W for 39.5 W of diode pumping was produced with beam propagation parameters of M_x ²=1.3 and M_y ²=1.1. Received: 10 October 2002 / Revised version: 9 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +44-20/7594-7744, E-mail: a.minassian@ic.ac.uk     

Compact diode-side-pumped Nd:YVO<Subscript>4</Subscript> laser in grazing-incidence configuration

The analysis of compact CW diode-side-pumped grazing-incidence-geometry Nd:YVO₄ laser designs is presented. An output power of 5 W (λ=1064 nm) was produced at 17 W of diode pump (conversion efficiency of 30%) in single transverse TEM₀₀ mode operation at high laser beam quality (M_x ²≈1.05 and M_y ²≈1.01). The resonator geometry was analyzed by applying generalized 4×4 matrix modeling of the spatial mode size, including the impact on the laser operation of cavity astigmatism and a thermal lens in the laser slab. The simplicity and compactness of the laser cavities allow their use for technological applications. Received: 31 July 2002 / Published online: 22 January 2003 RID="*" ID="*"Corresponding author. Fax: +44-20/7594-7744, E-mail: m.damzen@ic.ac.uk     

High-peak-power diode-pumped passively Q-switched Nd:YVO<Subscript>4</Subscript> laser

We report on a passively Q-switched diode-pumped Nd:YVO₄ laser polarized along the a axis (corresponding to the smallest value of emission cross section at 1064 nm), generating 157-μJ pulses with 6.0-ns time duration (>20 kW peak power) and 3.6 W of average power at 1064 nm with good beam quality (M²<1.4). The selection of the polarization was performed by a novel technique relying on the birefringence of the laser crystal and on the misalignment sensitivity of the resonator. Received: 30 September 2002 / Revised version: 22 November 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +39-382/422583, E-mail: agnesi@ele.unipv.it     

Emission of laser pulses due to transitions from metastable to metastable levels in strontium vapor

Multi-line laser transitions from one metastable triplet state to another at wavelengths of 2.92, 3.01, 2.69 and 2.60 μm have been obtained through high pulse repetition frequency longitudinal discharge in a mixed gas of strontium vapor and helium buffer gas. The intensity ratio of these laser lines was 5:4:4:1. As far as we know, these laser lines have never been reported except for 3.01 μm. Some mechanisms for forming a population inversion are initially discussed on the basis of analyzing features of corresponding energy-level structure and experimental phenomena. It is reasonable to name this kind of laser as an M–M transition laser according to the feature of the lasing process. Received: 15 October 2002 / Published online: 9 April 2003 RID="*" ID="*"Corresponding author. Fax: +86-0571/8795-1328, E-mail: pbl66@zju.edu.cn     

High-repetition-rate eye-safe optical parametric oscillator intracavity pumped by a diode-pumped Q-switched Nd:YVO<Subscript>4</Subscript> laser

A high-repetition-rate eye-safe optical parametric oscillator (OPO), using a non-critically phase-matched KTP crystal intracavity pumped by an acousto-optically (AO) Q-switchedNd:YVO₄ laser, is experimentally demonstrated. It is found that the average OPO signal power at 1573 nm can be efficiently increased by increasing the pulse repetition rate. Moreover, the intracavity OPO process effectively shortens the pulse width so that it is in the range 5∼8 ns for pulse repetition rates of 10 to 80 kHz. As a result of the relatively short pulse, the peak power at 1573 nm is higher than 2 kW at a pulse repetition rate of 80 kHz. Received: 10 July 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +886-35/729-134, E-mail: yfchen@cc.nctu.edu.tw     

Sub-90 fs pulses from a passively mode-locked Yb:YAl<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> laser

Passive mode locking of the self-frequency doubling Yb:YAB crystal with a saturable absorber mirror is studied at the fundamental wavelength. This laser has a very low threshold, and pulses as short as 85 and 87 fs are obtained for Ti:sapphire and diode laser pumping, respectively.     

The laser pulse from a rf waveguide CO2 laser

The behaviour of a rf-excited waveguide CO₂ laser in the pulse regime is studied experimentally. The specific time sections of the pulse have been defined and described in detail. The output pulse evolution versus input power, pressure of the laser mixture, output coupling, repetition frequency and pulse width has been investigated. The spectral content of the pulse has been analysed. A model explaining the effect of laser tuning during the pulse duration is given. The ultrahigh pulse (UHP), defined as the pulse for which the bulge effect occurs, is predicted. Received: 22 October 2002 / Revised version: 13 January 2003 / Published online: 26 March 2003 RID="*" ID="*"Corresponding author. Fax: +48-71/3203-189, E-mail: eda@zr.ita.pwr.wroc.pl     

Catalytic growth and characterization of Ga<Subscript>2</Subscript>O<Subscript>3</Subscript> nanowires

β-Ga₂O₃ nanowires have been synthesized using Ga metal and H₂O vapor at 800 °C in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga₂O₃ nanowires are achieved by separation of Ga metal and H₂O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the β-Ga₂O₃ nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature. Received: 27 June 2002 / Accepted: 7 October 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +886-6/234-4496, E-mail: wujj@mail.ncku.edu.tw     

Intensity resonances in a double-mode HeNe/CH4 laser with synchronized modes

4 gas laser with an intracavity absorbing cell is studied experimentally and theoretically at a modulation frequency approximately equal to the intermode beat frequency. It is revealed that in the vicinity of the absorption-line centre the intensity of every mode for certain system parameters displays resonance structures narrower than the homogeneous line width of the absorption line. This occurs when the range of mode synchronization is near the absorption-line centre and its size is less than the homogeneous width of the absorption line. Received: 29 February 1996/Revised version: 4 February 1997     

VUV F<Subscript>2</Subscript> laser ablation of sodium chloride

We report an investigation of the ablation of NaCl crystals at the 157-nm wavelength of the F₂ laser where there is very strong excitonic absorption. Probe-beam deflection and etch-rate measurements show that the interaction is characterised by a low ablation threshold (∼80 mJ cm^-2) and a capability for controllable material removal at the nanometer level. Scanning electron microscopy of the exposed surfaces show this to be microscopically smooth but with fine cracks present. It is demonstrated that micron-scale features can be formed in NaCl using 157-nm laser ablation, a result attributed to the strongly localised optical and thermal nature of the interaction. The results are discussed within the framework of a thermal vaporisation model. Received: 29 May 2002 / Accepted: 17 July 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +44-1482/465606, E-mail: p.e.dyer@hull.ac.uk     

Tunable single-frequency operation of a diode-pumped vertical external-cavity laser at the cesium D<Subscript>2</Subscript> line

We report on a diode-pumped vertical external-cavity surface-emitting laser emitting around 852 nm for Cesium atomic clocks experiments. We have designed a 7-quantum-well semiconductor structure optimized for low laser threshold. An output power of 330 mW was achieved for 1.1 W of incident pump power. Furthermore, a compact setup was built for low-power single-frequency emission. We obtained an output power of 17 mW in a single longitudinal mode, exhibiting both broad (9 nm) and continuous (14 GHz) tunability around the Cesium D₂ line. The laser frequency has been stabilized on an atomic transition with residual frequency fluctuations ∼300 kHz. Through a beatnote experiment the −3 dB laser linewidth has been measured to <500 kHz over 10 ms.     

Influence of cathode roughness on discharge homogeneity of a high-pulse repetition frequency long-pulse XeCl laser

Received: 17 October 1997/Revised version: 3 March 1998     

Far-infrared laser emission from deuterated ammonia

By optically pumping the deuterated isotopomers of ¹⁴NH₃ and ¹⁵NH₃ using ¹²C¹⁶O₂, ¹³C¹⁶O₂, ¹²C¹⁸O₂, and ¹³C¹⁸O₂ lasers, several new far-infrared (FIR) emission lines between 65 μm and 125 μm have been detected. The existing spectroscopy of ¹⁴N-ammonia isotopomers has been used to identify many of these lines, as well as some previously observed but unidentified. The spectroscopic data have been analyzed to predict over 20 additional FIR laser lines that could be pumped by a more capable CO₂ laser. This effort was motivated by a need for strong laser lines in frequency coincidence with molecular transitions of astrophysical interest. Of particularnote is the measurement of the 2680-GHz line of ¹⁴NHD₂, whose frequency is 4.9 GHz higher than that of the important J=1-0 line of interstellar HD. Received: 25 July 2002 / Published online: 20 December 2002 RID="*" ID="*"Corresponding author. Fax: +1-303/492-5941, E-mail: boreiko@spot.colorado.edu     

Photoluminescence behavior of pulsed laser deposited ZnGa<Subscript>2</Subscript>O<Subscript>4</Subscript> thin-film phosphors grown on various substrates

ZnGa₂O₄ thin-film phosphors have been grown on Si(100), Al₂O₃(0001) and MgO(100) substrates using pulsed laser deposition. The structural characterization was carried out on a series of ZnGa₂O₄ films grown on various substrates under various substrate temperatures and oxygen pressures. The films grown on these substrates not only have different crystallinity and surface morphology, but also different Zn/Ga composition ratio. The crystallinity and photoluminescence (PL) of the ZnGa₂O₄ films are highly dependent on the deposition conditions, in particular the stoichiometry ratio of Zn/Ga and the kind of substrate. The variation of Zn/Ga in the films also depends on not only the oxygen pressure but also the substrate temperature during deposition. The PL properties of pulsed laser deposited ZnGa₂O₄ thin films have indicated that Al₂O₃(0001) and MgO(100) are promising substrates for the growth of high-quality ZnGa₂O₄ thin films and that the luminescence brightness depends on the substrate. The luminescence spectra show a broad band extending from 350 to 600 nm and peaking at 460 nm. Received: 11 July 2002 / Accepted: 31 July 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +82-51-6206356, E-mail: jhjeong@pknu.ac.kr     

On the performance of an ArF and a KrF laser as a function of the preionisation timing and the excitation mode

An X-ray preionised ArF and KrF excimer laser has been studied with three different spiker-sustainer excitation circuits. We observed large differences in the laser performance, when the preionisation delay timing was varied on a nanosecond timescale. The behaviour of both lasers was found to be equivalent. The observations can be understood by considering the effect of the discharge excitation technique on the preionisation process. An excitation mode with a prepulse well above the steady-state voltage V_SS with a subsequent reversed overshoot voltage for initiating the discharge, in combination with a well-timed preionisation pulse is found to give the best results. Optimum output energies of 50 mJ with ArF and 175 mJ with KrF were obtained from an active volume of 60×1.5×1.2 cm in the so-called swing mode, with the preionisation applied 60 ns before the discharge breakdown. Received: 23 February 1999 / Revised version: 4 June 1999 / Published online: 16 September 1999     

Anisotropy of the dielectric permittivity of Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> measured with light-induced grating techniques

We apply, for the first time to our knowledge, photorefractive grating spectroscopy to obtain not-yet-known data on the anisotropy of the dielectric permittivity of Sn₂P₂S₆. Two independent techniques are used, one based on measurements of the amplitude of the space-charge field grating as a function of grating spacing and the other based on measurements of the grating decay time, also as a function of grating spacing. Both techniques provide close values for the anisotropy, which appears to be well pronounced, a ratio ε_xx/ε_zz≈4 is revealed for two of the three independent components of the dielectric tensor. Our data also allow us to conclude that the charge mobility is nearly isotropic in the same plane, μ_xx/μ_zz≈1. Received: 2 December 2002 / Published online: 26 March 2003 RID="*" ID="*"Corresponding author. Fax: +380-44/265-2359, E-mail: odoulov@iop.kiev.ua     

Self-starting five optical cycle pulse generation in Cr<Superscript>4+</Superscript>:YAG laser

We report stable self-starting near-transform-limited 26-fs pulses at 250-mW output power from a Kerr-lens mode-locked (KLM) Cr⁴⁺:YAG laser using chirped mirrors in combination with prisms. The highest output power achieved in KLM regime was 600 mW at 55-fs pulse duration. The experimental results agree well with the results of theoretical analysis with respect to KLM self-starting ability and stability against continuous-wave and multi-pulse operation. Parameter ranges for stable transform-limited KLM pulses as well as the shortest achievable pulse durations are established. Using an InGaAs-InP semiconductor saturable absorber mirror we could obtain self-starting 57-fs pulses at the average output power of 200 mW. Two-photon absorption was found to be the main mechanism favoring the multiple-pulse operation. Received: 2 May 2002 / Revised version: 16 July 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +43-1/58801-38799, E-mail: sorokina@tuwien.ac.at     

Room-temperature diode-pumped Yb<Superscript>3+</Superscript>-doped LiYF<Subscript>4</Subscript> and KYF<Subscript>4</Subscript> lasers

We present a comparative analysis on the growth, the spectroscopic features, and the cw laser action of room-temperature Yb(5%):LiYF₄ (YLF) and Yb(10%):KYF₄ (KYF) crystals. Optical slope efficiencies of 33% and 52% have been demonstrated for Yb:YLF and Yb:KYF crystals, respectively. A remarkable wide wavelength tunability from 1.01 to 1.07 μm has been obtained for both laser crystals.     

Output power optimisation of slab-waveguide laser with Gaussian output mirror

We present an approximate analysis of the nonlinear operation of the hollow slab-waveguide laser with Gaussian reflectivity profile output mirror, including gain saturation and longitudinal as well as transverse field distribution of the laser mode. The model presented is general and can be applied to the study of arbitrary configuration of the slab-waveguide laser. In particular, the laser characteristics obtained reveal the influence of the position of the output mirror and the Gaussian mirror parameter on the power efficiency of the laser system. Received: 6 January 2000 / Published online: 8 November 2000     

Influence of storage time on laser cleaning of SiO<Subscript>2</Subscript> on Si

The influence of the ‘storage time’ τ_s on the threshold fluence φ_cl and the efficiency in dry laser cleaning is investigated. τ_s denotes the time between the deposition of particles and the cleaning. As a model system we employed silica spheres with diameters of 500 nm and 1500 nm on commercial silicon wafers and single-pulse KrF excimer laser radiation (τ_FWHM=28 ns). For the 1500-nm silica spheres, φ_cl was found to increase from about 65 mJ/cm² to 125 mJ/cm² for storage times of 4 h and 362 h, respectively. For 500-nm silica spheres the increase in the threshold fluence was less than 20% for storage times up to 386 h. Received: 12 July 2002 / Accepted: 12 July 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. E-mail:dieter.baeurle@jku.at