氧分压对ZnO纳米结构的形貌及光学性能的影响

利用未采用催化剂的真空热蒸发法合成了不同形貌的硅基ZnO纳米结构,研究了氧分压对纳米ZnO结构及光学性能的影响.研究结果表明氧分压对ZnO纳米结构的形貌及光学性能具有明显的影响,在氧分压为25;、10;和5;时制得的纳米ZnO结构分别为纳米线、纳米带和纳米梳.X射线衍射测试表明制得的不同ZnO纳米材料均为六方纤锌矿结构,并具有明显的c轴择优取向性.采用PL谱对制备纳米结构的光学性能进行了测试.     

纳米氧化锌的制备及改性研究进展

介绍了纳米ZnO的制备方法,对比了各种制备方法的优缺点,综述了近年来研究者在改性纳米氧化锌材料方面做的工作,展望了未来的研究方向和发展趋势.     

表面活性剂辅助法制备纳米Z nO及光催化性能研究

以Zn(NO3)2·6H2 O、氨水和不同的表面活性剂为原料,采用沉淀法制备了具有不同微观形貌和尺寸的纳米ZnO,研究表面活性剂对纳米ZnO光催化降解甲基橙性能的影响.通过X射线衍射仪(XRD)、扫描电镜(SEM)和紫外可见分光光度计(UV-Vis)等对所制备纳米ZnO的物相、形貌及光吸收性能进行表征,并对其进行光催化性能测试.结果表明,以CTAB为表面活性剂所制备的纳米ZnO,粒径均匀、分散性良好、无明显团聚现象,并且对甲基橙的光催化降解性能最好,在2 h内降解率可达90.6;.     

纳米金刚石材料的研究进展

纳米金刚石不但拥有金刚石材料优异的物理、化学特性,还具备一些在纳米尺度下的特殊性能,如半导体特性、良好的生物相容性及光学特性.其研究吸引了国内外研究人员的广泛关注,且关于纳米金刚石材料的制备、性能表征以及应用的相关研究逐渐开展.前期的研究显示:不同形貌的纳米金刚石材料需要特定的制备方法、且表现出各异的特殊性能,适合于不同的应用领域.文中首先介绍了纳米金刚石颗粒、薄膜、金刚石纳米片及金刚石纳米线的制备方法;其次阐述了各类纳米金刚石材料在光、电、力学等方面的特殊性能,并对纳米金刚石材料在民用、生物医药、军事等领域的应用进行了总结,最后展望了纳米金刚石材料的发展前景.     

钇掺杂多孔结构氧化锌纳米棒的制备与性能研究

采用两步法在二氧化锡掺氟(SnO2:F,FTO)导电玻璃基板上制备出钇(Y)掺杂多孔结构氧化锌(ZnO)纳米棒,首先利用浸渍-提拉法在FTO导电玻璃基板上制备ZnO晶种层,然后利用水热法在ZnO晶种层上生长Y掺杂ZnO纳米棒.研究了不同浓度Y掺杂ZnO纳米棒的晶相结构、微观形貌、化学组成及光学性能.实验结果表明:所制备的Y掺杂ZnO纳米棒为沿c轴择优取向生长的六方纤锌矿结构,随着Y掺杂浓度的增加,ZnO纳米棒(002)衍射峰强度先增大后减小,纳米棒的平均长度由1.3μm增加到2.6μm.ZnO纳米棒的形貌由锥状结构向柱状结构演化,纳米棒侧面的孔洞分布密度增加.所制备的Y掺杂ZnO纳米棒具有一个较弱的紫外发光峰和一个较强的宽可见发光峰.所制备样品的光学带隙随着Y掺杂浓度的增加而减小,其光学带隙在3.29～3.21 eV之间变化.利用Y掺杂ZnO纳米棒作为量子点敏化太阳能电池的光阳极可极大提高太阳电池的光电转换效率.     

柔性有序ZnO纳米棒/TiO2纳米粒子复合薄膜的制备及其光电转换性能研究

采用电沉积法,在柔性不锈钢网基底上制备了ZnO纳米棒阵列,随后旋涂P25浆料,最终经退火后得到了ZnO纳米棒阵列/TiO2纳米粒子的复合结构薄膜,详细探讨了TiO2纳米粒子的填充,初级ZnO纳米棒阵列的形貌,P25浆料的旋涂次数以及表面活性剂PEG添加量等制备条件对复合结构光阳极形貌及光电性能的影响.研究表明:TiO2纳米粒子的引入能有效提高光阳极的比表面积,增强半导体与染料的耦合能力,ZnO纳米棒阵列能够为电子提供快速传输的通道.最佳制备条件为:初级ZnO纳米棒沉积次数为两次,浆料浓度为1 g/50 mL,旋涂浆料次数为三次,PEG添加量为4g/100 mL,制备的复合结构DSSC的光电转换效率较单一纳米棒阵列有一定的提高.     

衬底放置方式对ZnO阵列形貌的影响

ZnO纳米棒阵列通过两步化学法制备,首先通过水热法在ITO衬底上制备ZnO晶种,然后把有ZnO晶种的ITO衬底垂直放入以氯化锌和氨水为溶剂的pH值为11的溶液,在85℃恒温条件下生长2h,然后在600 ℃对其进行退火处理,就得到了在ITO衬底上生长的ZnO纳米棒阵列.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、紫外可见分光光度计和光致发光谱仪(PL)对样品的晶体结构、形貌和光学性能进行了表征.结果表明制备的高密度棒状ZnO纳米阵列是垂直生长在ITO衬底上,纳米棒的直径大约为150nm,长约1μm,纤锌矿ZnO纳米棒沿着[0002]方向一致生长;ZnO纳米棒阵列在波长为300 ～400 nm处出现了很强的紫外吸收峰;ZnO纳米棒阵列的光致发光光谱在380 nm左右有一个极强的紫外发光峰.研究了衬底放置方式对ZnO晶种形貌和光学性能的影响.最后通过对棒状ZnO纳米阵列形成过程中可能涉及到的化学反应以及形成机理做了简单的分析.     

垂直导电衬底的ZnO纳米片的制备及其染料敏化太阳电池的性能

介绍了二水乙酸锌/甲醇体系和硝酸锌/尿素体系制备垂直导电衬底的多孔ZnO纳米片、相应染料敏化太阳电池的性能以及制备垂直导电衬底ZnO纳米片体系的发展和现状.硝酸锌/尿素体系更易得到垂直导电衬底的多孔ZnO纳米片,而采用二水乙酸锌/甲醇体系,既可得到垂直导电衬底的多孔ZnO纳米片,也可得到由纳米片组成的多级结构微球.当前,硝酸锌/尿素体系制备的垂直导电衬底的ZnO纳米片的电池最高光电转换效率已达6.06;.     

PLD制备的籽晶层对ZnO纳米棒形貌及性能的影响

本文研究了脉冲激光沉积法(PLD)制备的不同籽晶层对水热生长ZnO纳米棒的形貌及发光性能的影响,通过比较得出,籽晶层是获得高度取向,排列有序的ZnO纳米棒的基础.电子回旋共振(ECR)氧等离子体参与沉积,有利于获得表面均匀且光滑平整的籽晶层,进而得到形貌及结晶质量较好的ZnO纳米棒.籽晶层的厚度不仅能够改变纳米棒的疏密程度,而且还能够改善纳米棒的取向性.通过调节籽晶层的退火温度可以调节纳米棒直径的大小,恰当的籽晶层退火温度也是获得形貌优良的ZnO纳米棒的一个关键因素.     

ZnO/Fe2O3复合结构的制备及光电化学性能研究

采用水热法在FTO导电玻璃上制备出大面积高能面裸露的ZnO纳米片阵列.采用旋涂法在纳米片表面制备Fe2O3纳米颗粒形成ZnO/Fe2O3复合结构.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见光吸收光谱和三电极光电测试系统对复合薄膜的结构组成、形貌、光学性能和光电化学性质进行了表征和分析.研究结果表明,随着Fe2O3复合次数的增加薄膜的光吸收范围逐步拓宽到可见光区,ZnO/Fe2O3复合结构光电极的光电流明显高于单纯的ZnO纳米片阵列光电极.     

Zinc oxide – analogue of GaN with new perspective possibilities

Zinc oxide due to specific electrical, optical and acoustic properties is the important semiconductor material, which has many various applications. There is growing interest in ZnO due to its potential applicability for optoelectronic devices such as light‐emitting diodes, laser diodes and detectors for UV wavelength range. ZnO properties are very close to those of widely recognized semiconductor GaN. The band gap of ZnO (3.37 eV) is close to that of GaN (3.39 eV) but ZnO exciton binding energy (60 meV) is twice larger than that of GaN (28 meV). Optically pumped UV lasing have been demonstrated at room temperature using high textured ZnO films. The excitonic gain close to 300 cm^–1 was achieved. ZnO thin films are expected to have higher quantum efficiency in UV semiconductor laser than GaN. The physical properties of ZnO are considered. PEMOCVD technology was used to deposit piezoelectric and highly transparent electroconductive ZnO films. Their properties are discussed. The experiments on polycrystalline ZnO films deposited by RF magnetron sputtering at different partial pressure of oxygen are presented. AFM images were studied in tapping mode for deposited films. The investigated films were dielectric ones and had optical transparency within 65‐85% at thickness in the interval 0.2‐0.6 μm. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

透明导电氧化物MgIn2O4的研究进展

透明导电氧化物(TCO)材料由于它的特殊性质,在平板显示器和太阳能电池等方面得到了广泛的应用.MgIn2O4作为一种新型的尖晶石结构的透明导电材料,也受到了研究人员的重视,成为近年来的研究热点,常用的MgIn2O4材料制备方法包括固相合成、磁控溅射、脉冲激光沉积等,本文综合国外学者的一些研究成果,介绍了目前MgIn2O4材料的制备方法及其性能提高和应用.     

氧化锌单晶生长、载流子调控与应用研究进展

氧化锌(ZnO)是一种历史悠久的材料,由于其微观结构非中心对称,最初被预测可以应用于压电和非线性光学领域,又因为它在室温下具有宽的禁带和高的激子束缚能,是一类重要的第三代宽禁带半导体材料,在半导体领域受到了广泛关注.然而,在实际应用中,ZnO在上述各个领域都遇到了一些瓶颈问题:在压电领域,原本被认为是绝缘的ZnO出现了...     

钙钛矿及类钙钛矿热致变色单晶材料的研究进展

随着人们对智能光伏玻璃、智能温度传感器等智能光电器件的需求增加,卤化物钙钛矿热致变色材料逐渐走进大众视野,由于钙钛矿材料的颜色可随温度发生快速响应,且该循环可逆,其在智能变色半导体器件中的应用相关研究已获得了广泛的关注。本文从钙钛矿单晶材料出发,首先介绍了钙钛矿及类钙钛矿单晶材料的几种常用液相制备方法。随后分别重点介绍了三维卤化物钙钛矿、低维类钙钛矿等几类单晶材料的热致变色现象,包括不同类型的材料因结构不同,而表现出两种不同的热变色机理:以低维类钙钛矿材料为代表的结构相变和以双钙钛矿材料为代表的晶格膨胀。对比了不同单晶材料热致变色性能的优劣,如是否具有可逆性等,同时介绍了其在多功能应用领域的发展潜力。最后对钙钛矿热致变色材料目前面临的挑战和未来的发展进行了展望。     

ZnO薄膜结构缺陷与发光性能研究(一)

在ZnO发光材料中存在的各种结构缺陷是制约ZnO发光性能的一个关键因素。本文总结了ZnO薄膜材料中可能存在的缺陷类型,并就点缺陷的性质及其对发光性能影响的研究现状做了重点评述。对ZnO薄膜发光光谱常见的三个发光带,即紫外、绿光和黄光而言,紫外发光普遍被认为是带-带直接辐射复合发光或激子发光;而对可见光,尤其是绿光的发光机理却有着不同的说法,人们早期认为是铜杂质,近年来普遍认为是氧空位、锌空位等点缺陷所致,确切机理仍有争论。此外,点缺陷作为非辐射中心对ZnO薄膜的发光寿命有一定的影响。     

Structural and photoluminescence properties of GaN/ZnO core‐shell nanowires with their shells sputtered

We have reported the preparation of ZnO‐coated GaN nanowires and investigated changes in the structural and photoluminescence (PL) properties by the application of a thermal annealing process. For fabricating the core‐shell nanowires, Zn target was used to sputter ZnO shell onto GaN core nanowires. X‐ray diffraction (XRD) analysis indicated that the annealed core‐shell nanowires clearly exhibited the ZnO as well as GaN phase. The transmissoin electron microscopy (TEM) investigation suggested that annealing has induced the crystallization of ZnO shell layer. We have carried out Gaussian deconvolution analysis for the measured PL spectra, revealing that the core GaN nanowires exhibited broad emission which consist of red, yellow, blue, and ultraviolet peaks. ZnO‐sputtering induced new peaks in the green region. Thermal annealing reduced the relative intensity of the green emission. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis of multi‐linked ZnO rods by microwave heating

Synthesis of linked ZnO micro rods by microwave radiation and its characterization is presented in this report. In this simple microwave assisted solution phase route zinc nitrate and hexamethylenetetramine has been used as the starting materials for the synthesis of linked ZnO rods. Linked ZnO rods with various morphologies such as bipods, tripods, tetrapods and etc have been prepared. The influence of irradiation time of microwave on the formation of linked ZnO rods was investigated. X‐ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), and energy dispersive spectroscopy (EDS) were used for the characterization of the product. The FESEM images showed ZnO rods of diameter in the range of 100‐200 nm and length around 5000 nm. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and growth mechanism of ZnO rod‐like nanostructures by a microwave‐assisted low‐temperature aqueous solution route

A zinc oxide (ZnO) nanoarray (rod‐like nanostructure) was successfully synthesized through a low‐temperature aqueous solution and microwave‐assisted synthesis using zinc nitrate hexahydrate (Zn(NO₃)₂·6H₂O) and hexamethylenetetramine (HMTA) as raw materials, and using FTO glass as substrate. The effects of parameters in the preparation process, such as solution concentration, reaction temperature and microwave power, on the morphology and microstructure of ZnO nanoarray were studied. Phase structure and morphology of the products were characterized by X‐ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The results indicated that hexagonal wurtzite structure ZnO nanoarray with good crystallization could be prepared through a low‐temperature solution method. When the concentration of the mixed solution was 0.05 M, the reaction temperature was 95 °C, and the reaction time was 4 h, high‐density ZnO regular nanorods of 200 nm diameter were obtained. A possible mechanism with different synthesis methods and the influence of microwave processing are also proposed in this paper.     

Role of transmission electron microscopy in the semiconductor industry for process development and failure analysis

Transmission electron microscope (TEM) based techniques offer superior spatial resolution and highly sensitive elemental analysis capabilities that can be exploited for metrology and materials characterization of sub-nanometer sized device features in advanced semiconductor technologies. TEM based techniques are suited for evaluating interfacial details, dimensions of device structures, and defects or flaws that arise during the fabrication process. In this work, TEM based techniques that are commonly used for physical characterization, compositional analysis, and failure analysis of semiconductor device structures are reviewed. Sample preparation methods, based on focused ion beam milling that is capable of site specific sample preparation, are also reviewed. The strength of these methods as well as problems, such as focused ion beam induced damage and gallium contamination, and methods to control them are described. Examples are presented from case studies that are required for process development, yield enhancement, and failure analysis of semiconductor manufacturing. Challenges faced due to introduction of alternative gate structures, nano-sized features, high-K gate dielectrics, and new materials needs in the integration of device structures are addressed.