开口悬挂端对单壁碳纳米管电子输运特性的影响

采用紧束缚模型研究了悬挂端对单壁碳纳米管电子输运特性的影响.结果表明：有限长悬挂端开口碳纳米管的电导在费米能级附近作周期性振荡.椅型(armchair)碳纳米管的振荡同时具有快、慢两个准周期，而锯齿型(zigzag)碳纳米管的振荡仅有一个周期；碳纳米管电导在费米能级附近的振荡周期随着悬挂端的增长而减小.研究还发现：有限长悬挂端开口碳纳米管的平均电导随探针与碳纳米管间耦合强度的增加而增大，其大小约为无限长悬挂端开口碳纳米管平均电导的两倍. 关键词： 输运特性 碳纳米管 紧束缚模型     

Growth of carbon nanotubes from ring carbon clusters

The possibility of growing single-wall carbon nanotubes from ring carbon clusters that appear at a certain stage of cooling carbon vapor is discussed. Such a technique could allow one to grow single-wall nanotubes without introducing a macroscopic amount of a catalyst and to retain nanotubes open during their growth. An analysis performed using semiempirical quantum-chemical methods shows that, when catalyst atoms interact with the edge of an already formed nanotube surface, the bonds of these atoms with carbon tend to occupy positions normal to the generatrix of the nanotube. This situation is natural for transition-metal atoms, since they favor the destruction of pentagonal cycles at the edge of the surface. The destruction mechanism consists in the fact that pentagons incorporate carbon atoms from the outside and become hexagons. The dependence of this tendency on the type of catalyst atom is considered.     

Density functional calculations of dangling bonds for CN and SiN films

Hyperfine interaction constants (HFICs) of dangling bonds for CN and SiN films were calculated by density-functional theory. The averaged ¹⁴N isotropic HFICs for C dangling bonds are almost equal to those for Si dangling bonds. The anisotropic ¹⁴N HFICs calculated for C dangling bonds are larger than those for Si dangling bonds by a factor 2. The calculated results were compared with experimental results obtained by electron spin resonance and electron nuclear double resonance. It was indicated that the carbon dangling bonds are located such that they avoid N atoms in CN films.     

Simultaneous interaction of methyl radicals and atomic hydrogen with amorphous hydrogenated carbon films, as investigated with optical in situ diagnostics

Methyl radicals (CH₃) and atomic hydrogen (H) are dominant radicals in low-temperature plasmas from methane. The surface reactions of these radicals are believed to be key steps leading to deposition of amorphous hydrogenated carbon (a-C:H) films or polycrystalline diamond in these discharges. The underlying growth mechanism is studied, by exposing an a-C:H film to quantified radical beams of H and CH₃. The deposition or etching rate is monitored via ellipsometry and the variation of the stoichiometry is monitored via isotope labeling and infrared spectroscopy. It was shown recently that, at 320 K, methyl radicals have a sticking coefficient of 10^-4 on a-C:H films, which rises to 10^-2 if an additional flux of atomic hydrogen is present. This represents a synergistic growth mechanism between H and CH₃. From the interpretation of the infrared data, a reaction scheme for this type of film growth is developed: atomic hydrogen creates dangling bonds by abstraction of bonded hydrogen within a surface layer corresponding to the range of H in a-C:H films. These dangling bonds serve at the physical surface as adsorption sites for incoming methyl radicals and beneath the surface as radicalic centers for polymerization reactions leading to carbon–carbon bonds and to the formation of a dense a-C:H film. Received: 18 July 2000 / Accepted: 12 December 2000 / Published online: 3 April 2001     

From ceramic–matrix nanocomposites to the synthesis of carbon nanotubes

The selective reduction in H₂ of oxide solid solutions produces nanocomposite powders in which transition metal nanoparticles are dispersed inside and on the surface of the oxide matrix grains. When using a H₂/CH₄ reducing atmosphere, the metal nanoparticles that form on the surface of the oxide grains act as catalysts for the CH₄ decomposition and, because of their small size at high temperatures (>800^○C), favor the in-situ nucleation and growth of single-wall and thin multiwall carbon nanotubes. This article reviews our results on the synthesis and characterization of M-MgAl₂O₄ (M=Fe, Fe/Co, Fe/Ni) nanocomposite powders, without and with carbon nanotubes, emphasizing the information that can be derived from Mössbauer spectroscopy as a complement to other characterization techniques.     

Molecular junctions by joining single-walled carbon nanotubes

Crossing single-walled carbon nanotubes can be joined by electron beam welding to form molecular junctions. Stable junctions of various geometries are created in situ in a transmission electron microscope. Electron beam exposure at high temperatures induces structural defects which promote the joining of tubes via cross-linking of dangling bonds. The observations are supported by molecular dynamics simulations which show that the creation of vacancies and interstitials induces the formation of junctions involving seven- or eight-membered carbon rings at the surface between the tubes.     

Hydrogen adsorption on the silicon (001) surface and on a step on the (111) surface

Adsorption of atomic hydrogen on an ideal (001) silicon surface is investigated in the present paper. Saturation of one of the two dangling bonds of a silicon atom on this surface by hydrogen removes the interaction (hybridization) between them, resulting in the appearance of a bonding and an antibonding chemisorption state associated with the attacked dangling bond, and in the shift of the peak of the remaining unsaturated dangling bond to the energy typical of a surface state of the (111) surface. Further saturation leads to the disappearance of this peak from the energy spectrum. An analogous situation occurs for the silicon atom with two dangling bonds on a step on the (111) surface, when hydrogen is chemisorbed. Both examples testify to the local chemical nature of Shockley surface states in silicon.The authors thank A. N. Sorokin for useful discussions.     

Chemical reactions of chlorine on a vicinal Si(100) surface studied by ESDIAD

The reaction of Cl₂ on a vicinal Si(100) surface has been studied by ESDIAD. This type of surface possesses two types of sites: pairs of dangling bonds on Si---Si terrace dimers, and single dangling bonds on the 2-atom layer high steps. The reactivity of these two sites is compared. For low coverages the step dangling bonds are identified as the preferred Cl bonding site after 673 K-annealing. Upon higher temperature annealing and SiCl₂(g) desorption, the terrace-site Cl species are depleted more rapidly than the step-site Cl species. Extensive isothermal etching under a continuous Cl₂ flux at 800 K is found to produce a disordered surface structure. Heating to 1123 K causes a reordering of the surface.     

The structure of thin carbon films deposited at 13.5 nm EUV irradiation

In this work, the structure and chemistry of thin nm-thick carbon films deposited on a substrate using strong 13.5 nm EUV irradiation under a strong vacuum were studied. The film structure was studied by Raman spectroscopy in comparison with the Raman spectra of well-known carbon phases: diamond, single-wall nanotubes, nano- and micro-crystalline graphite and amorphous carbon. As well, FTIR spectroscopy was used to study possible IR-active chemical bonds, primarily, hydrogen bonds. It was shown that films deposited on a surface under EUV irradiation consists of amorphous sp ²-carbon. The mechanisms of deposition are discussed briefly. Knowledge about the structure and chemistry of such carbon films is very important for EUV lithography.     

EPR investigation of a-Si:H aerosol particles formed under silane thermal decomposition

The dangling bond defects were investigated in a-Si:H particles formed under silane thermal decomposition in flow reactor. EPR together with hydrogen evolution method were used. The experimental results allowed us to conclude that there are two kinds of dangling bond defects in a-Si:H aerosol particles. The defects of the first kind are localized on the surface of interconnected microvoids and microchannels (surface dangling bonds) and those of the second kind are embedded in amorphous silicon network (volume dangling bonds). The thermal equilibration of dangling bonds and temperature dependence of equilibrium dangling bond concentration were investigated. It was found that at temperatures > 400 K the dangling bond concentrationNApplied Magnetic Resonance _s reversibly depends on sample temperature. The volume dangling bond concentration increases with temperature increasing (the effective activation energy of dangling bond formationU > 0), and the surface dangling bond concentration decreases with temperature increasing (U < 0). It has been found that EPR line is considerably asymmetric for samples with high hydrogen content and for low hydrogen content the EPR line is weakly asymmetric. A conclusion was drawn that the asymmetry degree depends on amorphous silicon lattice distortions. This conclusion has been confirmed by EPR spectra simulations.     

表面悬挂键对GaAs纳米线掺杂的影响及其钝化

利用第一性原理计算方法研究了表面悬挂键对GaAs纳米线掺杂的影响及其钝化．计算结果显示,不论是闪锌矿结构还是纤锌矿结构,GaAs纳米线表面Ga原子上带正电荷的表面悬挂键都是一类稳定的缺陷,并且这种稳定性不会随着纳米线直径的变化而变化．这种表面悬挂键会形成载流子陷阱中心从而从p型掺杂的GaAs纳米线俘获空穴,使得纳米线的掺杂效率下降．和NH₃相比,NO₂ 具有足够的电负性来俘获GaAs纳米线表面悬挂键上的未配对电子,从而有效地钝化GaAs纳米线的表面悬挂键,提高纳米线的p型掺杂效率,并且这种钝化特性不会随着纳米线直径的变化而改变．     

Monte Carlo simulated annealing study of mixed Si–Ge and C–C dimer adsorption on a Si (001) 2×1 surface

Energetics and structural relaxations related to the surface complexes formed by mixed Si–Ge and C–C dimer adsorption on predefined adsorption sites on a (2×1) reconstructed Si (001) surface are investigated. Monte Carlo simulated annealing procedure is used in conjugation with Tersoff's semi-empirical potentials. The reliability check of the method is performed by comparing our results for the case of Si–Ge dimer adsorption with the results reported by using ab initio pseudo-potential calculations. The agreement is found to be good. For carbon dimer adsorption, the nucleation centers are found to be different from those for Si and Ge. It is seen that carbon has a tendency to get adsorbed at the dangling bond site, or to form a Si–C–C–Si chain like structure under specific conditions.     

Simulating the thermal stability and phase changes of small carbon clusters and fullerenes

The thermal stability, phases and phase changes of small carbon clusters and fullerenes are investigated by constant energy Molecular Dynamics simulations performed over a wide range of temperatures, i.e., from to above the melting point of graphitic carbon. The covalent bonds between the carbon atoms in the clusters are represented by the many-body Tersoff potential. The zero temperature structural characteristics of the clusters, i.e., the minimum energy structures as well as the isomer hierarchy can be rationalized in terms of the interplay between the strain energy (due to the surface curvature) and the number of dangling bonds in the cluster. Minimization of the strain energy opposes the formation of cage structures whereas minimization of the number of dangling bonds favors it. To obtain a reliable picture of the processes experienced by carbon clusters as a function of temperature, both thermal and dynamical characteristics of the clusters are carefully analyzed. We find that higher excitation temperatures are required for producing structural transformations in the minimum energy structures than in higher lying isomers. We have also been able to unambiguously identify some structural changes of the clusters occurring at temperatures well below the melting-like transition. On the other hand, the melting-like transition is interrupted before completion, i.e., the thermal decomposition of the clusters (evaporation or ejection of or units) occurs, from highly excited configurations, before the clusters have fully developed a liquid-like phase. Comparison with experiments on the thermal decomposition of and a discussion of the possible implications of our results on the growth mechanisms leading to the formation of different carbon structures are included. Received: 25 March 1998 / Received in final form: 30 October 1998     

A tight binding analysis of the step-dependent density of 〈111〉 surface states for covalent semiconductors

The influence of steps on the electronic dangling bonds surface states is studied in a tightbinding approximation. It is first shown how surface states can be studied separately as a two dimensional problem, using the concept of effective interactions between dangling bonds. This technique is applied to perfect 〈111〉 surfaces where a nearest neighbour approximation reproduces fairly well the existing dispersion curves. This simplified model is then used for a systematic analysis of the existence of localized states associated with steps. The results are found to provide a theoretical interpretation of the observed features appearing when step densities are important.     

Model band structure of reconstructed (111) 2 × 1 surface of silicon

We have computed the electronic band structure for a model of the 2 × 1-reconstructed (111) surface of Si, based on 2 two-dimensional net of dangling bonds. A pairing of surface atoms is assumed, involving a displacement and a tilting of the dangling bonds towards each other. The energy gap that separates the two bands of surface states obtained increases with the degree of reconstruction, which is taken as a parameter. Experimental data, particularly surface optical absorption, find a satisfactory explanation in terms of this calculation, which indicates in Si (111) 2 × 1 a shift of the surface atoms by about 8% of their ideal distance.     

Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

The lattice-misfit InN/GaN (0001) interface supports a triangular network of α-core 90° partial misfit dislocations. These misfit dislocations provide excellent strain relief. However, in their unreconstructed form the dislocation contains numerous high-energy N dangling bonds, which must be eliminated by reconstructing the dislocation core. Existing single-period (SP) and double-period (DP) dislocation reconstruction models eliminate these dangling bonds via a like-atom dimerization, such as N-N dimers. However, we show that these N–N dimers are unstable for the III-N materials, so an entirely new reconstruction mechanism is needed. A “triple-period” (TP) structural model is developed which eliminates N dangling bonds via the formation of N vacancies instead of N-N dimers. The model contains no N–N (or III–III) bonds, fully bonds all N atoms to four group-III neighboring atoms, and satisfies the “electron counting rule” by transferring charge from In dangling bonds to Ga dangling bonds.     

Energetics and stability of vacancies in carbon nanotubes

In this work we present ab initio calculations of the formation energies and stability of different types of multi-vacancies in carbon nanotubes. We demonstrate that, as in the case of graphene, the reconstruction of the defects has drastic effects on the energetics of the tubes. In particular, the formation of pentagons eliminates the dangling bonds thus lowering the formation energy. This competition leads to vacancies having an even number of carbon atoms removed to be more stable. Finally the appearance of magic numbers indicating more stable defects can be represented by a model for the formation energies that is based on the number of dangling bonds of the unreconstructed system, the pentagons and the relaxation of the final form of the defect formed after the relaxation.     

Indium square root 7 x square root 3 on Si(111): a nearly free electron metal in two dimensions

We present measurements of the Fermi surface and underlying band structure of a single layer of indium on Si(111) with square root 7 x square root 3 periodicity. Electrons from both indium valence electrons and silicon dangling bonds contribute to a nearly free, two-dimensional metal on a pseudo-4-fold lattice, which is almost completely decoupled at the Fermi level from the underlying hexagonal silicon lattice. The mean free path inferred from our data is quite long, suggesting the system might be a suitable model for studying the ground state of two-dimensional metals.     

The interaction of Cr(CO)3 on the (n, 0) nanotube side-walls: a density functional study through a cluster model approach

Density functional calculations have been performed to investigate the functionalization of single-wall carbon nanotubes (SWNTs) with the Cr(CO)₃ metal fragment, employing extended molecular models. A circumcoronene molecule (C₅₄H₁₈), made by the fusion of 19 hexagonal carbon rings, can be regarded as a fragment of a graphene sheet. To reproduce the curvature of the SWNT surface, suitable geometric constraints have been imposed on the C₅₄H₁₈ model, freezing the positions of the outer hydrogens along the directions of the nanotube C-C bonds. Geometry optimizations have then been performed under this constraint on the Cr(CO)₃-C₅₄H₁₈ complexes, pointing out the most favourable coordination sites on the hexagonal rings of the carbon atom surface and the electronic properties of the resulting system. The effect of the curvature on the metal coordination to nanotubes has been analysed by investigating the interaction of the Cr(CO)₃ metal complex with the C₅₄H₁₈ molecules, modelling (n, 0) nanotubes with different degrees of curvature, i.e. with various values of the chiral vector (n, 0).     

Hydrogen-induced metallization of the 3C-SiC(0 0 1)-(3 × 2) surface

A surprising metallization of the SiC(0 0 1)-(3 × 2) surface induced by hydrogen adsorption was discovered in recent experiments. The effect was ascribed to dangling bonds created on the third layer of the surface system by H adsorption and stabilized by steric hindrance. We have investigated the surface metallization by density functional calculations. Our total-energy minimizations show that dangling bonds on the third layer are very unstable. Instead, H adatoms form angular Si-H-Si bonds on the third layer after the asymmetric dimers on the top layer have been saturated by H forming monohydrides. The novel Si-H-Si bonds on the third layer give rise to a metallic surface, indeed. But the mechanism for metallization is very different from the one suggested originally. Likewise, H atoms can also occupy bridge positions in angular Si-H-Si bonds on the second layer and induce metallization, as well. In addition to monohydrides on the top-layer dimers, we have also investigated dihydride surfaces with additional H on the second and/or third layer. The dihydride surface structure with H adsorbed on both the second and third layers is energetically most favorable and is also metallic. In all three cases the new Si-H-Si bonds are the origin of the surface metallization while its nature is somewhat more intricate, as will be discussed.