Hybrid magnetic transistor

We report the development of a hybrid semiconductor-metal-semiconductor permeable-base transistor in vertical architecture. This transistor has a p-type silicon collector, a thin tin layer as base and a magnetoresistive conjugated polymer, poly(9,9-dioctyl-1,4-fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal, independently of the magnetic field in the investigated range.     

Inductive single-electron transistor

We demonstrate a sensitive method of charge detection based on radio-frequency readout of the Josephson inductance of a superconducting single-electron transistor. Charge sensitivity 1.4 x 10(-4) e/square root Hz, limited by a preamplifier, is achieved in an operation mode which takes advantage of the nonlinearity of the Josephson potential. Owing to reactive readout, our setup has more than 2 orders of magnitude lower dissipation than the existing method of radio-frequency electrometry. With an optimized sample, we expect uncoupled energy sensitivity below variant Planck's over h in the same experimental scheme.     

Exciton optoelectronic transistor

We demonstrate experimental proof of principle for an optoelectronic transistor based on the modulation of exciton flux via gate voltage. The exciton optoelectronic transistor (EXOT) implements electronic operation on photons by using excitons as intermediate media; the intensity of light emitted at the optical output is proportional to the intensity of light at the optical input and is controlled electronically by the gate. We demonstrate a contrast ratio of 30 between an on state and an off state of the EXOT and its operation at speeds greater than 1 GHz. Our studies also demonstrate high-speed control of both the flux and the potential energy of excitons on a time scale much shorter than the exciton lifetime.     

All-optical passive transistor

We show the possibility of developing an all-optical passive transistor in a simple and novel way. This could be done by copropagating two coaxial beams through a modified optical power filter. We show NOT logic and intensity modulation of the strong beam by the weak beam obtained with the analog.     

深亚微米金属氧化物场效应晶体管及寄生双极晶体管的总剂量效应研究

为从工艺角度深入研究航空航天用互补金属氧化物半导体(CMOS)工艺混合信号集成电路总剂量辐射损伤机理, 选取国产CMOS 工艺制作的NMOS晶体管及寄生双极晶体管进行了⁶⁰Coγ射线源下的总剂量试验研究. 发现: 1) CMOS工艺中固有的寄生效应导致NMOS晶体管截止区漏电流对总剂量敏感, 随总剂量累积而增 大; 2) 寄生双极晶体管总剂量损伤与常规双极晶体管不同, 表现为对总剂量不敏感, 分析认为两者辐射损伤的差异来源于制作工艺的不同; 3)寄生双极晶体管与NMOS晶体 管的总剂量损伤没有耦合效应; 4)基于上述研究成果, 初步分析CMOS工艺混合信号集成电路中数字模块及模拟模块辐射损伤机制, 认为MOS晶体管截止漏电流增大是导致数字模块功耗增大的主因, 而Bandgap电压基准源模块对总剂量不敏感源于寄生双极晶体管抗总剂量辐射的能力. 关键词： 总剂量效应 N沟道金属氧化物场效应晶体管 寄生双极晶体管 Bandgap基准电压源     

抗辐射双极n-p-n晶体管的研究

根据发射极周长与面积比(P/A)最小的原则,优化设计了双极n-p-n晶体管的尺寸参数,采用20 V双极型工艺设计制造了三种抗辐射加固的n-p-n晶体管.测试表明,在总剂量为1 kGy的辐照条件下,所制备的发射结加固型n-p-n晶体管和含有重掺杂基区环的n-p-n晶体管,辐照后的电流增益比常规结构的n-p-n晶体管高10%-15%;而两种加固措施都有的n-p-n晶体管,辐照后的电流增益比常规结构的n-p-n晶体管高15%-20%. 关键词： 双极n-p-n晶体管 辐射效应 电流增益 抗辐射     

From transistor to nanotube

We present here the main steps in the evolution of the transistor, since the tremendous invention of such a device and the introduction of the integrated circuit. We will then recall the main steps of Moore's law development. Nanotechnology began at the very beginning of the 21st century. Two aspects are presented in this article: the first, called ‘More Moore’, consists in continuing the laws of scale up to the physical limits; the second aspect, called ‘beyond CMOS’ explores new concepts such as spintronics, moletronics, nanotronics and other types of molecular electronics. To cite this article: J.-C. Boudenot, C. R. Physique 9 (2008).     

Mesoscopic photon heat transistor

We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit--leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-type of conductance formula, which gives the photonic heat current through an arbitrary circuit element coupled to two dissipative reservoirs at finite temperatures. As an illustration we present an exact solution for the case when the intermediate circuit can be described as an electromagnetic resonator. We discuss in detail how the MPHT can be implemented experimentally in terms of a flux-controlled SQUID circuit.     

Double-gate-all-around tunnel field-effect transistor

In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional core gate, the novel device achieves a steeper subthreshold slope, less susceptibility to the short channel effect, higher on-state current, and larger on/off current ratio than the traditional gate-all-around tunneling field-effect transistor. The excellent performance makes the proposed structure more attractive to further dimension scaling.     

Terahertz plasmon-emitting graphene-channel transistor

In this work we propose and analyze the possibility of creating terahertz plasmon-emitting graphene-channel transistor. It is shown that at electric pumping the damping of the terahertz plasmons can give way to their amplification, when the real part of the dynamic conductivity of graphene becomes negative in the terahertz range of frequencies due to the interband population inversion.     

Double base hot electron transistor

We propose a novel device concept of focusing a hot-electron beam for ballistic injection. Such a focused beam may be achieved by passing injected electrons through a doped semiconductor layer with a built-in electric field. This leads to a more narrow and energy-monochromatic beam. When such a beam is used in ballistic devices, the device performance should significantly improve. As an example, we propose a novel Double-Base-Hot-Electron Transistor (DBHET). Some preliminary calculations demonstrate that both electron transit time across the active base and the density of high energy electrons improve in DBHETs compared to conventional Hot-electron Transistors (HETs). We also show that the DBHET has better temperature stability because of its more energetic and monochromatic electron beam injected into the active base.     

InP-based deep-ridge NPN transistor laser

We report an InP-based deep-ridge NPN transistor laser (TL, λ～1.5 μm). By placing the quantum well (QW) active material above the heavily Zn-doped base layer, both the optical absorption of the heavily p-doped base material and the damage of the quality of the QWs resulted from the Zn diffusion into the QWs are decreased greatly. CW operation of the TL is achieved at -40 °C, which is much better than the shallow-ridge InP-based NPN TL. With future optimization of the growth procedure, significant improvement of the performance of the deep-ridge InP-based NPN TLs is expected.     

A silicon stress-sensitive unijunction transistor

The performance of a silicon stress-sensitive unijunction transistor is investigated. The transistor is classed as a stress-sensitive semiconductor lateral bipolar device with an S-type input (emitter) I-V characteristic. The optimal layout of the device and its basic parameters are determined. The device can serve as a basis for designing relaxation oscillators with the physically integrated function of mechanical stress-to-signal frequency conversion at the output.     

The electron cut-off wavelength transistor

We propose a transistor based on the transverse quantization of electron waves. The spread of non-degenerate electrons is some 20 nm at room temperature. In a wire-like structure having a diameter of this or smaller size, the electron transport will be cut-off like that of electromagnetic modes in a wave guide. Accelerated in electric fields, hot electrons have smaller spread and may now propagate through the narrow electron waveguide. This principle presents the basis for novel minuscule and versatile simple devices.     

Three-terminal normal-superconductor junction as thermal transistor

The European Physical Journal B - By means of ab initio calculations, we have investigated the chemisorption properties of ethanol onto segregating binary nanoalloys (NAs). We select nanostructures...     

Dynamic theory of an optical transistor

The amplification of a modulation by an optical transistor is shown to depend on the modulation frequency. At high frequency there is no amplification whereas at low frequency the expected amplification occurs. The critical frequency which separates these two domains depends on the modulation amplitude. These results are derived analytically for purely dispersive optical bistability in the bad cavity case. The modulation can be applied to the holding beam, to the refraction index or to the detuning with similar results for the output field intensity.     

Monolithically integrated bacteriorhodopsin-GaAs field-effect transistor photoreceiver

We have applied the large photovoltage developed across a layer of selectively deposited bacteriorhodopsin to the gate terminal of a monolithically integrated GaAs-based modulation-doped field-effect transistor, which delivers an amplified photoinduced current signal. The integrated biophotoreceiver device exhibits a responsivity of 3.8 A/W. The optoelectronic integrated circuit is achieved by molecular-beam epitaxy of the field-effect transistor's heterostructure, photolithography, and selective-area bacteriorhodopsin electrodeposition.