椭偏法测量表面微粗糙合金钢材料的光学常数研究

采用椭偏法测量入射光波长为0.632μm,入射角为50°～85°时合金钢的光学常数。考虑材料表面的粗糙度,用Ohlidal-Lukes理论对所测光学常数值进行了修正,发现椭偏参量的修正量随入射角增大而增大。结果表明,测量入射角在50°～70°范围内测量值与修正后计算结果基本一致,在70°～85°范围内测量值与修正后的计算结果差距较大。因此,用椭偏法测量合金钢光学常数时使入射角小于70°,测量结果会更加准确。     

采用椭偏法结合分光光度法研究极薄银的光学常数

极薄银在滤光片、高反射镜等中有广泛的应用,其光学常数严重影响着膜系的特性。在室温条件下,采用电阻热蒸发技术分别在硅和玻璃基底上沉积5.3 nm~26 nm不同厚度的极薄银薄膜,用TalySurfCCI非接触式轮廓仪测量了薄膜的厚度,研究了不同厚度银薄膜的光学常数n和k。镀制厚度5.3 nm、7.9 nm、14.1 nm、26.0 nm的银薄膜,结果显示极薄银的光学常数与块状银光学常数不同,当膜厚小于14.1 nm时,折射率n在380 nm~600 nm随波长增加而增加,在600 nm~1 600 nm随波长增加缓慢减小至趋于稳定值2.6;消光系数k在380 nm~500 nm随着波长增加而增加,在500 nm~1 600 nm随波长增加而缓慢减小至趋于0不变;当膜厚大于14.1 nm时,折射率随波长增加而增加,消光系数随波长近似呈线性增加。整体上,膜厚增加时折射率减小且趋于块状银的折射率,k随厚度增加而增加并最终趋于块状膜。用此拟合的光学常数代入TFc膜系设计软件计算其透射率,发现与分光光度计测得的透射率吻合较好。     

椭偏光谱测量中椭偏参数的灵敏度分析

在对椭圆偏振测量的基本原理进行了简单介绍和推导后,讨论了椭圆偏振测量中椭偏参数关于薄膜参数的灵敏度以及入射角对椭偏参数的影响,并进行了具体的仿真分析,得到如下结论：椭偏参数Delta对薄膜光学常数和薄膜厚度变化的灵敏度明显高于椭偏参数Psi。在椭偏数据处理中,椭偏参数Delta的测量精度直接影响薄膜光学常数和薄膜厚度的拟合精度。为了提高椭偏参数Delta的测量精度,可以选择入射角在膺布儒斯特角附近。所得结论对高精度椭偏测量具有指导意义。     

椭偏与光度法联用精确测定吸收薄膜的光学常数与厚度

介绍了一种同时利用椭偏仪和分光光度计精确测量薄膜光学常数的方法, 并详细比较了该方法与使用单一椭偏仪拟合结果的可靠性.采用可变入射角光谱型椭偏仪（VASE）表征了250—1700 nm波段辉光放电法沉积的类金刚石薄膜,研究发现当仅用椭偏参数拟合时,由于厚度与折射率、消光系数的强烈相关性,无法得到吸收薄膜光学常数的准确解.如果加入分光光度计测得的透射率同时拟合,得到的结果具有很好的惟一性.该方法无需设定色散模型即可快速拟合出理想的结果,特别适合于确定透明衬底上较薄吸收膜的光学常数.关键词：光学常数光谱型椭偏仪吸收薄膜透射率     

椭偏与光度法联用精确测定吸收薄膜的光学常数与厚度

介绍了一种同时利用椭偏仪和分光光度计精确测量薄膜光学常数的方法, 并详细比较了该方法与使用单一椭偏仪拟合结果的可靠性.采用可变入射角光谱型椭偏仪（VASE）表征了250—1700 nm波段辉光放电法沉积的类金刚石薄膜,研究发现当仅用椭偏参数拟合时,由于厚度与折射率、消光系数的强烈相关性,无法得到吸收薄膜光学常数的准确解.如果加入分光光度计测得的透射率同时拟合,得到的结果具有很好的惟一性.该方法无需设定色散模型即可快速拟合出理想的结果,特别适合于确定透明衬底上较薄吸收膜的光学常数.     

薄膜光学常数的椭偏测量

利用光谱型椭偏仪测量了镀在熔石英玻璃基片上的氟化镁薄膜在300～850nm波长范围内的椭偏参数.并利用Levenberg-Marquardt算法.反演出了氟化镁薄膜在该波长范围内的色散曲线.通过与纯氟化镁体材料的色散曲线比较,发现所镀的氟化镁薄膜的折射率略小于体材料的折射率.     

光谱型椭偏仪精确表征非晶吸收薄膜的光学常数

采用光谱型椭偏仪(SE)和分光光度计分别测量了超薄类金刚石(DLC)薄膜和非晶硅(a-Si)薄膜的椭偏参数(y和D)和透射率T。由于薄膜的厚度与折射率、消光系数之间存在强烈的相关性,仅采用椭偏参数拟合,难以准确得到薄膜的光学常数。如果加入透射率同时进行拟合(以下简称SE+T法),可简单、快速得到薄膜的厚度和光学常数。但随机噪声、样品表面的轻微污染或衬底上任何小的吸收都可能影响SE+T法拟合的光学常数的准确性。因此将SE+T法和光学常数参数化法联用,实现DLC、a-Si薄膜光学常数的参数化,以消除测量数据中的噪声对光学常数的影响。结果显示,联用时的拟合结果具有更好的唯一性,而且拟合得到的光学常数变得平滑、连续且符合Kramers-Kronig(K-K)关系。这种方法特别适合于精确表征厚度仅为几十纳米的非晶吸收薄膜的光学常数。     

椭偏透射法测量氢化非晶硅薄膜厚度和光学参数

针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度T_s和辉光放电前气体温度T_g的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜.关键词：椭偏测量透射法光学参数氢化非晶硅薄膜     

光谱型椭偏仪精确表征非晶吸收薄膜的光学常数EI北大核心CSCD

采用光谱型椭偏仪(SE)和分光光度计分别测量了超薄类金刚石(DLC)薄膜和非晶硅(a-Si)薄膜的椭偏参数(y和D)和透射率T。由于薄膜的厚度与折射率、消光系数之间存在强烈的相关性,仅采用椭偏参数拟合,难以准确得到薄膜的光学常数。如果加入透射率同时进行拟合(以下简称SE+T法),可简单、快速得到薄膜的厚度和光学常数。但随机噪声、样品表面的轻微污染或衬底上任何小的吸收都可能影响SE+T法拟合的光学常数的准确性。因此将SE+T法和光学常数参数化法联用,实现DLC、a-Si薄膜光学常数的参数化,以消除测量数据中的噪声对光学常数的影响。结果显示,联用时的拟合结果具有更好的唯一性,而且拟合得到的光学常数变得平滑、连续且符合Kramers-Kronig(K-K)关系。这种方法特别适合于精确表征厚度仅为几十纳米的非晶吸收薄膜的光学常数。     

FTIR and spectroscopic ellipsometry investigations of the electron beam evaporated silicon oxynitride thin films

FTIR and variable angle spectroscopic ellipsometer in conjunction with computer simulation were employed to investigate the electron beam evaporated SiO_xN_y thin films. FTIR showed a large absorption band located between 600 and 1250 cm⁻¹, which indicates that Si-O and Si-N bands are overlap in SiO_xN_y films. A three layers model was used to fit the calculated data to the experimental ellipsometric spectra. The main layer was described by Cauchy model while the interface layer and the surface layer were described using Tauc-Lorenz oscillator and Bruggeman effective medium approximation, respectively. The thickness, the refractive index and the extinction coefficient were accurately determined. The refractive index at 630 nm was found to increase from 1.74 to 1.85 with increasing the film thickness from 191.6 to 502.2 nm. The absorption coefficient was calculated from the obtained extinction coefficient values and it has been used to calculate the Tauc and Urbach energies.     

Thermally tunable optical constants of vanadium dioxide thin films measured by spectroscopic ellipsometry

Smart materials with reversible tunable optical constants from visible to near-infrared wavelengths could enable excellent control over the resonant response in metamaterials, tunable plasmonic nanostructures, optical memory based on phase transition and thermally tunable optical devices. Vanadium dioxide (VO₂) is a promising candidate that exhibits a dramatic change in its complex refraction index or complex dielectric function arising from a structural phase transition from semiconductor to metal at a critical temperature of 70 °C. We demonstrated the thermal controllable reversible tunability of optical constants of VO₂ thin films. The optical/dielectric constants showed an abrupt thermal hysteresis which confirms clearly the electronic structural changes. Temperature dependence of dielectric constants as well as optical conductivity of sputtered VO₂ thin films was also reported and compared to previous theoretical and experimental reports.     

Optical arrangement and proof of concept prototype for mid infrared variable angle spectroscopic ellipsometry

We present an optical setup for variable angle mid infra red spectroscopic ellipsometry. The arrangement can be placed into the sample compartment of a Bruker ifs66v/s vacuum Fourier transform infrared spectrometer. A first prototype of the setup has been tested in the spectral range from 650 cm⁻¹ to 4000 cm⁻¹ and can measure incidence angles between 8° and 87°. We compare the measured data to reference measurements with a commercial variable angle infrared spectroscopic ellipsometer. The comparison gives a proof of concept for the discussed optical arrangement.     

各向异性表面的椭偏测量的消光过程

本文描述了在正向入射条件下,当待测的各向异性反射面(如全息光栅)的两个笛卡儿本征矢方向与系统的指向有微小偏离时,椭偏测量的消光过程由理想的两步过程转变成多步过程。文中同时定量指出该偏离所造成的影响及应用。     

In situ roughness monitoring of sputtered Pt thin film under dynamic turbulence using adaptive optics

A new optical monitoring system for rapid and in situ surface roughness measurement of Pt film on silicon is developed in this study. The in-process measurement is achieved by combining an optical probe of laser-scattering phenomena and adaptive optics for aberration correction. Platinum (Pt) thin film is selected due to the extensive utilization in semiconductor industry and excellent chemical inertness. The aim of this study was to demonstrate the necessity for adaptive optics (AO) compensation in regions containing room-temperature turbulences. Measurement results of eight Pt films (roughness ranging from 58 to 83 nm) sputtered on top of P-type silicon wafer demonstrate excellent correlation between the peak power and average roughness with a correlation coefficient (R²) of 0.9962 and a trend equation for predicting the surface roughness of Pt thin films is obtained as y = 9E07x^−3.783. Roughness average (Ra) of Pt thin films (x) of can be directly determined from the peak power (y) using the proposed method under dynamic disturbance. Furthermore, the proposed AO-assisted system is in good agreement with stylus method and less than 1.1% error values are obtained for the aforementioned average sample roughness.     

Low-temperature far-infrared ellipsometry of convergent beam

Development of an ellipsometry to the case of a coherent far infrared irradiation, low temperatures and small samples is described, including a decision of the direct and inverse problems of the convergent beam ellipsometry for an arbitrary wavelength, measurement technique and a compensating orientation of cryostat windows. Experimental results are presented: for a gold film and UBe₁₃ single crystal at room temperature (=119m), temperature dependencies of the complex dielectric function of SrTiO₃ (=119, 84 and 28m) and of YBa₂Cu₃O_7– ceramic (A=119m).     

Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN

GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation.     

Rotating polarizer,compensator, and analyzer ellipsometry

In this paper we propose theoretically a set of ellipsometric configurations using a rotating polarizer, compensator, and analyzer at a speed ratio of N1ω：N2ω：N3ω. Different ellipsometric configurations can be obtained by giving different integral values to N1, N2, and N3. All configurations are applied to bulk c-Si and GaAs to calculate the real and imaginary parts of the refractive index of the samples. The accuracies of all ellipsometric configurations are investigated in the presence of a hypothetical noise and with small misalignments of the optical elements. Moreover, the uncertainties in the ellipsometric parameters as functions of the uncertainties of the Fourier coefficients are studied. The comparison among different configurations reveals that the rotating compensator–analyzer configuration corresponds to the minimum error in the calculated optical parameters.     

Observation of strong light-matter coupling by spectroscopic ellipsometry

We report on the observation of strong coupling between excitons and cavity photons in a ZnO-based microresonator up to room temperature. The ZnO-based resonator was grown by means of pulsed laser deposition (PLD) on c-sapphire substrate and consists of a half-wavelength ZnO-cavity between two Bragg reflectors, each made of 10.5 layer pairs of yttria stabilized zirconia and Al₂O₃. Angle-resolved spectroscopic ellipsometry revealed the resonator to be in the strong coupling regime at room temperature. This was confirmed for temperatures between 10 K and 290 K by means of angle-resolved photoluminescence and reflection experiments. Prior studies on a Fabry–Perot resonator containing a half-wavelength YSZ-cavity (empty resonator) demonstrate the ability of ellipsometry to gain comprehensive information on mode-structure properties of resonators without coupling effects.