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A. v. v. Bassewitz G. v. v. Minnigerode 《Zeitschrift für Physik A Hadrons and Nuclei》1964,181(4):368-390
An apparatus is described, which enables us to measure the thicknesses of films immediately after condensation at low temperatures and in different stages of annealing by means of a multiple beam interferometry technique (Tolansky). The film thicknesses are also measured by the temperature dependence of the electrical resistance. Measurements of Pb- and Cu-films are given as an example, and the sources of errors are discussed. In the case of Pb-films both the methods give the same thicknesses at any condensation temperature. This leads to the conclusion that Pb-films have a density of the compact material. At low condensation temperatures the disorder in the films turns out to be thickness dependent, and the distribution of defects seems to be inhomogeneous. Cu-films condense at low temperatures with high porosity. This may be the cause of the often observed getter effect of freshly condensed Cu-films. The filling factor of Cu-films is studied at different condensation temperatures. The temperature dependence of the resistivity of thin metallic films is discussed in the appendix of this paper. 相似文献
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