ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术,制备了ZnSe/SiO2复合薄膜.X射线衍射分析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1:1.01-1:1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌,结果表明复合薄膜表面既存在尺寸约为400nm的ZnSe晶粒,也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测量了薄膜椭偏角Ψ,Δ与波长λ的关系,采用Maxwell-Garnett有效介质理论对薄膜的光学常数、厚度、气孔率、ZnSe的浓度进行了数据拟合.利用荧光光谱分析了薄膜的光致发光,结果表明在波长为395nm的激发光下,487nm的发射峰对应着闪锌矿型ZnSe的带边发射,同时也观测到薄膜中ZnSe晶体增强的自由激子发射及伴随着ZnSe晶体缺陷而产生的辐射发光.     

Size dependence of non-linear optical properties of SiO2 thin films containing InP nanocrystals

SiO₂ composite thin films containing InP nanocrystals were fabricated by radio-frequency magnetron co-sputtering technique. The microstructure of the composite thin films was characterized by X-ray diffraction and Raman spectrum. The optical absorption band edges exhibit marked blueshift with respect to bulk InP due to strong quantum confinement effect. Non-linear optical absorption and non-linear optical refraction were studied by a Z-scan technique using a single Gaussian beam of a He-Ne laser (632.8 nm). We observed the saturation absorption and two-photon absorption in the composite films. An enhanced third-order non-linear optical absorption coefficient and non-linear optical refractive index were achieved in the composite films. The nonlinear optical properties of the films display the dependence on InP nanocrystals size. Received: 27 June 2000 / Accepted: 27 June 2000 / Published online: 13 September 2000     

Growth of Nb thin films on SiO2

Nb thin films have been prepared by electron beam evaporation under ultrahigh vacuum conditions on fused silica substrates at various temperatures, and their structural and morphological evolutions have been investigated using X-ray diffraction and atomic force microscopy. The crystallographic texture of the Nb films is found to depend on the growth temperature. At room temperature, the [1 1 0] texture is dominant. However, at 200°C, the [3 1 0] oriented growth is favored, co-existing with [1 1 0] and [2 0 0] oriented grains. At 400–600°C, a completely [1 1 0] textured film is formed. At even higher temperature (800°C), a complex texture of [1 1 0] (dominant), [2 0 0] and [3 1 0] is observed again. It is also found that the single [1 1 0] textured Nb films have smooth surfaces, and the complex textured Nb films have rough surfaces.     

Omnidirectional reflector using nanoporous SiO2 as a low-refractive-index material

Triple-layer omnidirectional reflectors (ODRs) consisting of a semiconductor, a quarter-wavelength transparent dielectric layer, and a metal have high reflectivities for all angles of incidence. Internal ODRs (ambient material's refractive index n > 1.0) are demonstrated that incorporate nanoporous SiO2, a low-refractive-index material (n = 1.23), as well as dense SiO2 (n = 1.46). GaP and Ag serve as the semiconductor and the metal layer, respectively. Reflectivity measurements, including angular dependence, are presented. Calculated angle-integrated TE and TM reflectivities for ODRs employing nanoporous SiO2 are R(int)/TE = 99.9% and R(int)/TM = 98.9%, respectively, indicating the high potential of the ODRs for low-loss waveguide structures.     

A comparative morphological study of electron beam co-deposited binary optical thin films of HfO2:SiO2 and ZrO2:SiO2

A comparative morphology, grain structure and optical properties studies of reactive electron beam co-evaporated mixed thin films of hafnia–silica (HfO₂:SiO₂) and zirconia–silica (ZrO₂:SiO₂) systems have been carried out using atomic force microscopy and phase modulated ellipsometry. The addition of silica, especially with small fractions, has demonstrated altogether different types of evolutions in the microstructure and morphology in these binary thin film systems possibly forming new solid solution phases. Such morphological evolutions are probed through RMS roughness, power spectral density, height–height correlation and autocorrelation analyses of the topographic data acquired through atomic force microscopy. The present investigations indicated that with composition-control morphological quality improvement is more favourable in composite hafnia–silica over the zirconia–silica films. So for ultraviolet optical coating applications which demand low light scattering thin film microstructure, hafnia–silica binary composite system has a definite edge over the zirconia–silica counterpart.     

Hydrogen-release mechanisms in the breakdown of thin SiO2 films

The mechanism of hydrogen release from the anode Si/SiO(2) interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms.     

Laser modification of silver nanoclusters in SiO2 thin films

Thin films of silica containing silver nanoclusters have been deposited by magnetron co-sputtering followed by thermal annealing. Laser modification of the mean cluster size was performed using the fourth harmonic of a Nd:YAG laser with energies of between 35 and 125 mJ/cm². The mean size of the clusters was estimated from the shape of the plasmon resonance band in the optical absorption spectra with the help of a computer simulation based on the Mie theory in static approximation. It was found that laser treatment with fluences above a certain threshold leads to a reduction of the mean size of the clusters and this reduction is greater for greater fluences. After a long treatment with the same fluence the effect saturates. The final mean size of the clusters after saturation depends only on the laser fluence and not on the initial mean cluster size. When lower laser fluences were used it was possible after laser annealing to return the mean cluster size to its initial value by thermal annealing. In this way by using a combination of laser treatment and thermal annealing a predetermined mean cluster size could be achieved. The mechanism of laser-induced cluster-size modification is discussed. PACS 81.07.-b; 42.62.-b; 36.40.Qv     

非晶SiO2薄膜中氧双键缺陷电子及光学特性的第一性原理研究

利用第一性原理对离子溅射沉积的非晶SiO2薄膜微观结构进行了分析、研究,结果表明,氧双键缺陷（SGs）可以作为体缺陷稳定存在于非晶SiO2中,SGs缺陷导致非晶SiO2薄膜材料禁带中引入了新的电子态,减小了禁带宽度;同时采用时相关密度泛函理论（TDDFT）对其光学特性进行了研究,得到非晶SiO2薄膜介电常数与入射光子能量间的关系曲线,从介电常数的虚部发现SGs缺陷在3.6eV处存在一个光学吸收峰。     

非晶SiO_2薄膜中氧双键缺陷电子及光学特性的第一性原理研究

利用第一性原理对离子溅射沉积的非晶SiO2薄膜微观结构进行了分析、研究,结果表明,氧双键缺陷(SGs)可以作为体缺陷稳定存在于非晶SiO2中,SGs缺陷导致非晶SiO2薄膜材料禁带中引入了新的电子态,减小了禁带宽度;同时采用时相关密度泛函理论(TDDFT)对其光学特性进行了研究,得到非晶SiO2薄膜介电常数与入射光子能量间的关系曲线,从介电常数的虚部发现SGs缺陷在3.6eV处存在一个光学吸收峰.     

Optical properties of thin films of closely packed SiO2 spheres

Ordered, closely packed, defect-free one-, two-, and three-layer thick films of SiO₂ spheres of diameter D varying from 0.6 to 1.4 μm were obtained. Their optical transmittance and reflectance spectra were measured in the range 0.3–2.5 eV. The one-layer structures reveal a transmittance minimum whose spectral position is described by the Bragg law with the plane separation equal to the sphere radius D/2. As the number of the layers increases, a spectral feature appears which signals the formation of a photonic gap in the 〈111〉 direction of the fcc crystal lattice and is determined by the distance between the {111} planes equal to 0.816D. The spectra of two-and three-layer structures measured with a diverging light beam contain additional lines originating from the formation of photonic gaps by the {111} and {221} planes. __________ Translated from Fizika Tverdogo Tela, Vol. 44, No. 6, 2002, pp. 1026–1031. Original Russian Text Copyright ? 2002 by Bazhenov, Gorbunov, Aldushin, Masalov, Emel’chenko.     

Investigation of optical properties of thin CuGaTe2 films

Thin films of copper tellurogallate were obtained by the method of pulsed laser spraying. The structure of the films and the parameters of the unit cell were determined by the x-ray method. It is shown that the films possess p-type conduction and their resistivity decreases with an increase in the substrate temperature. From the transmission near the edge of the fundamental absorption band a determination was made of the energy of interband transitions, crystalline cleavage, and spin-orbital splitting. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 6, pp. 946–949, November–December, 1998.     

单层SiO2物理膜与化学膜激光损伤机理的对比研究

采用离子束溅射沉积技术和溶胶-凝胶技术在K9基片上镀制了厚度相近的SiO2单层介质膜,用表面热透镜技术对两类膜层分别进行了热吸收及实时动态热畸变实验测试,结合散射光阈值测试及实验前后膜层的显微观测,对相同基底、相同膜层材料而采用不同方法镀制的光学膜层,发现化学膜的强激光损伤阈值远高于相应物理膜;从热力学响应及膜层特性差异的角度揭示了化学膜层的强激光损伤阈值远高于相应物理膜层的微观机理,即物理膜具有高吸收下的致密膜层快传导的基底热冲击效应,而化学膜则有低吸收下的疏松空隙填充慢传导的延缓效应,大量的实验数据及现象都证实了这一结论.     

Ferroelectric SrxBa1-xNb2O6 optical waveguiding thin films on SiO2-coated Si(100) substrates

x Ba_1-xNb₂O₆ (x=0.5) films (abbreviated as SBN:0.5) on SiO₂-coated Si substrates are potential components for the application of integrated electro-optics devices. SBN:0.5 optical waveguiding thin films on SiO₂-coated Si substrates with a very thin MgO diffusion buffer have been successfully prepared by pulsed laser deposition. The as-grown films have a refractive index of 2.28, which is close to that of bulk SBN. X-ray analysis showed that the as-grown films have a single-phase tetragonal tungsten bronze structure. The SBN:0.5 thin films prepared by PLD exhibit favorable ferroelectric and optical waveguiding properties. The composition and the morphology of the films were also examined by XPS and by SEM, respectively. Ferroelectric SBN:0.5 optical waveguiding thin films on SiO₂-coated Si substrates are expected to be used in integrated electro-optic devices. Received: 27 February 1997/Accepted: 17 October 1997     

Production of SiO2 films from alkoxides and their optical properties

The specific features of spectrochemical properties of active silica-gel films in air media with various pH have been studied. SiO₂ films were obtained by acid hydrolysis of tetraethoxysilane. The optical properties were controlled by immobilization of indicators (bromocresol purple, phenol red). The possibility of using them as optical-fiber sensors is shown. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 4, pp. 503–506, July–August, 2000.     

Ag-Au合金/SiO2复合薄膜的制备与表征

以AgNO3,HAuCl4和正硅酸乙酯为主要原料,利用溶胶-凝胶法和旋涂技术,通过热处理和紫外光辐射还原得到了不同nAg/nAu(1∶0,2∶1,1∶2,0∶1)的Ag-Au合金/SiO2复合薄膜.从扫描电子显微镜和X射线衍射谱的结果可以看出得到的薄膜均匀性好,复合薄膜中合金颗粒的尺寸为10 nm左右.利用紫外-可见分光光谱仪研究了复合薄膜的光吸收性能,结果表明,随着nAg/nAu的降低,吸收峰的位置也由最初的Ag纳米粒子的等离子共振吸收峰430 nm附近,逐渐红移到Au纳米粒子的等离子共振吸收峰605和880 nm附近.从光吸收谱可以看出,nAg∶nAu＝2∶1和1∶2的两个样品分别在515,730 nm附近和550,730 nm附近出现表面等离子共振吸收峰.这表明Au-Ag合金固溶体的形成.     

氧化硅稳定的氧化锡量子点薄膜的制备及其光学性能

用溶胶-凝胶-水热过程制备了氧化硅稳定的氧化锡量子点,然后将其分散到氧化硅溶液中,用旋转涂膜的方法制备光学性能良好的氧化硅稳定的氧化锡量子点薄膜。X射线衍射和高分辨透射电镜表征显示氧化锡量子点具有良好的四方金红石晶型,平均粒径约4.0 nm。室温光致发光显示这种氧化硅稳定的氧化锡量子点薄膜在356 nm和388 nm处分别有很强的激子发光和缺陷态发光。根据透射谱拟合得到了氧化锡量子点薄膜的光学禁带宽度,其值约为3.96 eＶ。     

氧化硅稳定的氧化锡量子点薄膜的制备及其光学性能

 用溶胶-凝胶-水热过程制备了氧化硅稳定的氧化锡量子点,然后将其分散到氧化硅溶液中,用旋转涂膜的方法制备光学性能良好的氧化硅稳定的氧化锡量子点薄膜。X射线衍射和高分辨透射电镜表征显示氧化锡量子点具有良好的四方金红石晶型,平均粒径约4.0 nm。室温光致发光显示这种氧化硅稳定的氧化锡量子点薄膜在356 nm和388 nm处分别有很强的激子发光和缺陷态发光。根据透射谱拟合得到了氧化锡量子点薄膜的光学禁带宽度,其值约为3.96 eＶ。     

Third-order nonlinear optical response of Au:SiO 2 thin films: Influence of gold nanoparticle concentration and morphologic parameters

We report a study on the third-order nonlinear optical properties of nanocomposite thin films composed of gold particles embedded in a silica host matrix. Samples of various metal volume fractions, ranging from 8 to 35%, are synthesized by the sputtering technique. Some of them are annealed. Nonlinear optical measurements, which are performed by using the z-scan technique, reveal both a very large nonlinear absorption and a weak nonlinear refraction close to the surface plasmon resonance frequency of the particles. We especially study the effect of the metal concentration and the influence of thermal treatment on the real and imaginary components of the third-order nonlinear susceptibility. Our results reveal that, as the metal concentration reaches a few percent, the mutual electromagnetic interactions between particles greatly enlarge the nonlinear optical response of the material and can not be neglected in the theoretical analysis. Moreover, the thermal treatment leads, for a given concentration, to a significant increase of the nonlinear response, which is ascribed to a modification of the material morphology. We finally point out that the material nonlinear properties are very sensitive to the incident wavelength through the local field enhancement phenomenon. Received 12 December 2001