真空热蒸发制备CdS/ZnS核/壳异质结纳米线

将传统的真空热蒸发镀膜实验加以改进,先以催化剂辅助蒸发制备出CdS纳米线,再将其作为模板,以ZnS为蒸发源物质,二次蒸发包覆ZnS层,成功制备出大量的CdS/ZnS核/壳异质结纳米线.经X射线衍射、X射线能量色散谱、透射电镜分析表明,所得CdS/ZnS异质结纳米线的核心部分为CdS单晶纳米线,外层为ZnS多晶层.本文的实验方法简便易行,所得纳米结构在光电纳米器件领域有一定应用前景.     

The electrical properties of semiconductor/metal,semiconductor/liquid,and semiconductor/conducting polymer contacts

Critical comparisons are drawn between the basic electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer junctions. A theoretical model is developed to describe the basic current-voltage properties of semiconductor contacts, with emphasis on the contrasts between ideal and observed behavior. Using the concepts from this model, the characteristics of a variety of semiconductor contacts are evaluated. The discussion focuses on the following semiconductors: Si, GaAs, InP, and II-VI compounds based on the Cd-(chalcogenide) materials.     

从高质量半导体/超导体纳米线到马约拉纳零能模

作为马约拉纳费米子的"凝聚态版本",马约拉纳零能模是当前凝聚态物理领域的研究热点.马约拉纳零能模满足非阿贝尔统计,可以构建受拓扑保护的量子比特.这种由空间上分离的马约拉纳零能模构建的拓扑量子比特不易受局域噪声的干扰,具有长的退相干时间,在容错量子计算中具有重要的应用前景.半导体/超导体纳米线是研究马约拉纳零能模和拓扑量...     

The structural and optical properties of gallium arsenic nanoparticles

Spherical gallium arsenic nanoparticles prepared by thermal evaporation method have been fabricated successfully. The structural and optical properties of GaAs nanoparticles are studied in detail. It is found that while the growth pressure rises from 0.4 to 5 Torr, the average size of GaAs nanoparticles increases from 6 to 12 nm and standard deviation keeps almost the same (2 nm) except for 0.5 Torr. By using transmission electron microscopy and Raman spectra, a critical preparation condition has been found which characterize the amorphous to crystal transition of GaAs nanoparticles.     

Molecular dynamics simulation of structural change at metal/semiconductor interface induced by nanoindenter

The structures of the Si/Cu heterogenous interface impacted by a nanoindenter with different incident angles and depths are investigated in detail using molecular dynamics simulation.The simulation results suggest that for certain incident angles,the nanoindenter with increasing depth can firstly increase the stress of each atom at the interface and it then introduces more serious structural deformation of the Si/Cu heterogenous interface.A nanoindenter with increasing incident angle(absolute value) can increase the length of the Si or Cu extended atom layer.It is worth mentioning that when the incident angle of the nanoindenter is between-45° and 45°,these Si or Cu atoms near the nanoindenter reach a stable state,which has a lower stress and a shorter length of the Si or Cu extended atom layer than those of the other incident angles.This may give a direction to the planarizing process of very large scale integration circuits manufacture.     

Morphology and interfacial properties of microrelief metal–semiconductor interface

The effect of the morphology of Au/GaAs interface microrelief, prepared by chemical anisotropic etching, on current flow mechanism, electronic and recombination properties of interface has been investigated. Simulation of I–V curves and optical transmittance of light into semiconductor was made on the basis of the developed theories taking into account the barrier height distribution and the effect of scattering of light by low microrelief.     

Fabrication of highly luminescent InP/Cd and InP/CdS quantum dots

Highly luminescent InP/Cd and InP/CdS core-shell QDs were fabricated by sequential addition of cadmium acetylacetonate and dodecanethiol to InP core solutions, which showed a red-shift in absorption and emission. ICP measurement revealed the existence of cadmium and TEM images showed the increased size of InP/CdS QDs. PXRD data identified zinc blend structures of InP and InP/CdS QDs, which indexed to the (1 1 1), (2 2 0) and (3 1 1) planes. The slight shift of peaks between InP and InP/CdS QDs can demonstrate the existence of CdS shell structures.     

高功率半导体激光器结温与1/f噪声的关系研究

高功率半导体激光器的结温上升, 不仅影响它的输出功率、斜坡效率、阈值电流和寿命, 而且还会产生光谱展宽和波长偏移. 因此, 热管理成为抽运激光器研发中的一个主要问题. 本文首先建立了噪声功率谱与结温变化的物理模型, 根据压缩感知理论, 将测量得到含有高斯白噪声和1/f噪声的混叠复合噪声信号稀疏化后, 进行基追踪算法去噪, 通过改变算法的迭代次数及测量矩阵大小, 获得1/f噪声电压功率谱与结温变化关系曲线, 避免了直接测量结温的复杂性.通过数值估计结果, 可以较好地指导高功率半导体激光器的热管理工作. 关键词： f噪声')" href="#">1/f噪声 结温度 热阻 高功率半导体激光器     

From metal/semiconductor separation to single‐chirality separation of single‐wall carbon nanotubes using gel

In the present work, a review of the metallic (M) and semiconducting (S) separation of single‐wall carbon nanotubes (SWCNTs) using polysaccharide gels is presented. First, the progress of the M/S separation is described, including the following: the discovery of high‐yield separation using agarose gel electrophoresis, the separation of SWCNTs without an electric field, such as through the use of the freeze and squeeze method, the development of continuous separation using column chromatography, and the single‐chirality separation of SWCNTs using a multicolumn with dextran‐based gel. Next, the separation mechanism using gel is discussed, in which separation is achieved by selective adsorption of S‐SWCNTs by gel with a specific combination of surfactant and gel. Lastly, future directions for the separation of SWCNTs and for the use of the separated SWCNTs are discussed.

     

Effects of quantum interference on the electron transport in the semiconductor/benzene/semiconductor junction

Using the tight-binding model and the generalised Green’s function formalism, the effect of quantum interference on the electron transport through the benzene molecule in a semiconductor/benzene/semiconductor junction is numerically investigated. We show how the quantum interference sources, different contact positions and local gate can control the transmission characteristics of the electrode/molecule/electrode junction. We also study the occurrence of antiresonant states in the transmission probability function using a simple graphical scheme for different geometries of the contacts between the benzene molecule and semiconductor (silicon and titanium dioxide) electrodes.     

金属/有机半导体界面偶极层的研究

利用金属/无机半导体界面模型对金属/有机半导体界面偶极层进行了数值研究.讨论了界面处金属/有机半导体原子间距与化学键密度对界面偶极能的影响;分析了界面层电场强度随化学键密度变化的原因;对界面偶极能与金属功函数之间的关系给出了合理的解释.     

The influence of the Dresselhaus spin--orbit coupling on the tunnelling magnetoresistance in ferromagnet/ insulator /semiconductor/ insulator /ferromagnet tunnel junctions

This paper investigates the effect of Dresselhaus spin--orbit coupling on the spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet double-barrier structures. The influence of the thickness of the insulator between the ferromagnet and the semiconductor on the polarization is also considered. The obtained results indicate that (i) the polarization can be enhanced by reducing the insulator layers at zero temperature, and (ii) the tunnelling magnetoresistance inversion can be illustrated by the influence of the Dresselhaus spin--orbit coupling effect in the double-barrier structure. Due to the Dresselhaus spin--orbit coupling effect, the tunnelling magnetoresistance inversion occurs when the energy of a localized state in the barrier matches the Fermi energy E_F of the ferromagnetic electrodes.     

高迁移率Ge沟道器件研究进展

高迁移率Ge沟道器件由于其较高而且更对称的载流子迁移率, 成为未来互补型金属-氧化物-半导体(CMOS) 器件极有潜力的候选材料. 然而, 对于Ge基MOS器件, 其栅、源漏方面面临的挑战严重影响了Ge基MOS 器件性能的提升, 尤其是Ge NMOS器件. 本文重点分析了Ge基器件在栅、源漏方面面临的问题, 综述了国内外研究者们提出的不同解决方案, 在此基础上提出了新的技术方案. 研究结果为Ge基MOS 器件性能的进一步提升奠定了基础.     

Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells

It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation (CSS). The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I--V and C--V measurements and deep level transient spectroscopy (DLTS). By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580oC sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, E_v+0.341 eV(H4), E_v+0.226 eV(H5) and E_C-0.147 eV(E3), are found in the 580oC sample, and the possible source of deep levels is analysed and discussed.     

Lu~(3+)掺杂对CdO陶瓷电、热输运性能的影响

利用传统固相烧结法制备了Cd1-xLuxO(x=0%,0.1%,0.5%,0.75%,1.0%,1.25%,1.5%,2%)陶瓷样品并研究了Lu3+掺杂对其电、热输运性能的影响.随着Lu3+掺杂浓度的增大,Cd1-xLuxO样品的室温载流子浓度持续增大而其迁移率表现出先增大后减小的趋势.在300—1000 K测试温度区间内,Cd1-xLuxO的电导率表现出金属电导行为且其电导率和热导率均随着Lu3+掺杂浓度的增大而升高;塞贝克系数在整个测试区间内均为负值,其随温度和载流子浓度的变化关系可用自由电子模型描述.     

Effect of CdS nanoparticles on fluorescence from Sm doped SiO2 glass

Sm³⁺ doped CdS nanoparticles have been prepared by sol-gel method. The effect of annealing temperatures and doping concentrations of CdS on the photoluminescence spectra of Sm³⁺ were studied. From the measurement of its optical absorption, three phenomenological Judd-Ofelt intensity parameters (Ω₂, Ω₄, and Ω₆) have been computed and used to parameterize the radiative properties. The influences of CdS on Sm³⁺ ions were studied by fluorescence spectroscopy. The fluorescence spectra revealed that the emission intensity of samarium increased considerably in the presence of CdS nanoparticles. The evaluation of radiative properties of Sm³⁺ containing CdS showed that the ⁴G_5/2→⁶H_7/2 transition in silica matrix had the potential to be a laser transition.     

场助InP／InGaAsP／InP半导体光电阴极异质结能带的计算

采用双曲型的渐变函数,同时考虑加偏压时引起的阴极表面空间电荷区的变化,对场助InP/TnGaAsP/InP半导体光电阴极异质结的能带结构进行了详细的分析和计算,得到了在不同材料参数时,异质结能带结构的分布曲线.计算结果指出了达到理想的异质结传输效率时,发射层的厚度和掺杂浓度、吸收层的掺杂浓度、异质结界面处渐变区宽度以及场助偏压应满足的条件.它有助于场助半导体光电阴极的结构设计和材料参数的选择.     

对半导体pn结接触电势的一个讨论

讨论了半导体pn结内建电场和接触电势的形成与可测性，回答了在半导体物理学pn结内容教学中学生经常会提出的一个似是而非的问题．从热力学第一定律、金属-半导体接触等不同角度详细解释了热平衡(零偏下)时pn结不可能对外输出电压和电流的原因．     

真空热蒸发生长CdX(X=S,Te)纳米线研究性实验

将一维纳米结构的气—液—固生长机制与大学材料物理实验真空热蒸发镀膜结合,设计了生长半导体纳米线的研究性实验.利用金属铋或锡作为催化剂,真空热蒸发生长了CdS,CdTe等半导体纳米线.纳米线产物形貌均匀,并可实现选择性生长.     

单核/双壳结构CdSe/CdS/ZnS纳米晶的合成与发光性质

以巯基乙酸为稳定剂,在水溶液中合成了单核/双壳结构的CdSe/CdS/ZnS纳米晶。在内核CdSe和外壳ZnS之间的内壳CdS作为晶格匹配调节层,能够很好的改善核/壳界面处的性能,而且,最外层ZnS能够最大程度地使激子受限。用TEM和XPS对纳米晶进行了表征,并且用光致发光光谱和吸收光谱对不同核壳结构的纳米晶的发光性能进行了比较,结果表明单核/双壳结构的纳米晶具有更加优异的发光特性。