Controlled optical properties of a five-level atom embedded in photonic crystals with defect modes

The optical spectra of a five-level atom embedded in a photonic crystal are studied by considering the double-band photonic band gap reservoir with defect modes in the band gap. It is shown that some interesting phenomena such as absorption, transparency, normal or anomalous dispersion, and large amplification of a weak probe field can be observed by modulating system parameters.     

Generation of new longitudinal modes in an amplifying dye solution

A novel phenomenon is reported for the first time that the generation of the newlongitudinal modes in amplifying multi-longitudinal mode laser in a dye amplifier.The newmodes are located on the violet side within the gain band of the amplifing medium.The phe-nomenon is explained by the theory of third-order nonlinear polarization in the case of four-wave resonances.The intensity of the new modes created are comparable with or even higherthan that of the original modes.The effect can be expected to serve as a new method for ex-tention of spectral tuning ranges of laser.     

ICF中靶丸内等离子体的温度和密度的估算

用原子物理方法中Grasp-92实用程序, 计算了原子系统的能谱和辐射系数。根据局部热动平衡理论,结合惯性约束聚变 “058发充Ar+D2靶丸实验”的光谱数据, 估算得到靶丸内等离子体的温度和密度分别为804.7 eV和8.39×1023 cm-3 。     

Effect of pearlitic morphology with varying fineness on the cavitation erosion behavior of eutectoid rail steel

The present work discusses the effect of the pearlitic morphology with varying fineness on the cavitation erosion behavior of eutectoid rail steel. Cavitation erosion of three different types of the pearlitic steels (furnace-cooled, air-cooled, and forced-air-cooled) consisting of coarse, fine, and very fine microstructures were tested in 3.5% NaCl solution and compared with that of the as-received pearlitic rail steel. The variation in the mean depth of erosion (MDE) and mean depth erosion rate (MDER) with erosion time was analyzed. Furthermore, the cavitation erosion resistance of the as-received, the air-cooled, and the forced-air-cooled was found to be 1.03, 1.51, and 2.14 times better than the furnace-cooled pearlitic steel, respectively. It was concluded that the cavitation erosion resistance of the pearlitic steel increased with the increase in the fineness of the microstructure.     

X波段五腔渡越管振荡器的理论与实验研究

提出了一种新结构的X波段五腔渡越管振荡器，进行了理论和实验研究。根据场分布进行了一维非线性分析，结果表明该结构可以产生高功率微波，并判断了工作模式，为TM01模的3π/5模。采用粒子模拟验证了一维非线性分析的结论，并优化设计出五腔渡越管振荡器,优化结果为:输出功率约1 GW， 工作频率9.3 GHz，束波转换效率约22%。实验中，通过参数调节，得到频率约9.25 GHz，峰值功率约780 MW，脉宽（半高宽）21 ns的输出微波，束波转换效率约为16%。实验结果与模拟结果基本符合。     

薄栅氧化层中陷阱电荷密度的测量方法

提出了一种测量陷阱电荷密度的实验方法,该方法根据电荷陷落的动态平衡方程,利用恒流应力前后MOS电容高频CV曲线结合恒流应力下栅电压的变化曲线求解陷阱电荷密度及位置等物理量.给出了陷阱电荷密度的解析表达式和相关参数的提取方法和结果.实验表明这种方法方便而且具有较高的精度 关键词： 薄栅氧化膜 经时击穿 恒流应力 陷阱电荷密度     

氮氟复合注入对注氧隔离SOI材料埋氧层内固定正电荷密度的影响

为了抑制埋层注氮导致的埋层内正电荷密度的上升, 本文采用氮氟复合注入方式, 向先行注氮的埋层进行了注氮之后的氟离子注入, 并经适当的退火, 对埋层进行改性. 利用高频电容-电压 (C-V) 表征技术, 对复合注入后的埋层进行了正电荷密度的表征. 结果表明, 在大多数情况下, 氮氟复合注入能够有效地降低注氮埋层内的正电荷密度, 且其降低的程度与注氮后的退火时间密切相关. 分析认为, 注氟导致注氮埋层内的正电荷密度降低的原因是在埋层中引入了与氟相关的电子陷阱. 另外, 实验还观察到, 在个别情况下, 氮氟复合注入引起了埋层内正电荷密度的进一步上升. 结合测量结果, 讨论分析了该现象产生的原因. 关键词： 绝缘体上硅(SOI) 材料 注氮 注氟 埋氧层正电荷密度     

The Effect of SRS on Signal Power in Single-mode Silica Fiber in DWDM Optical Communication System with Equally Spaced Channels

Assuming that the Raman gain profile of silica fiber is a triangular function, we derive analytic solutions of N-channel steady-state forward SRS coupling wave equation with equal (but arbitrary) channel spacing. Considering the SRS cross coupling among N-channels, the analytic solutions are applicable to arbitrary signal light power. The results point out that the sequence mi=pi(z)/pi(0) [pi(z) and pi(0) is the power of signal light of i-th channel at transmission length z and 0, respectively. i=1,2,...N] maintains a geometric progression with the common ratio q in the transmission process. The common ratio q varies as a exponential function of the effective transmission length, the sum of input light power and the channel spacing, respectively.     

The Effect of SRS on Signal Power in Single mode Silica Fiber in DWDM Optical Communication System with Equally Spaced Channels

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Calibration Curve with Improved Limit of Detection for Cadmium in Soil: An Approach to Minimize the Matrix Effect in Laser-Induced Breakdown Spectroscopic Analysis

The present article describes a working or combined calibration curve in laser-induced breakdown spectroscopic analysis, which is the cumulative result of the calibration curves obtained from neutral and singly ionized atomic emission spectral lines. This working calibration curve reduces the effect of change in matrix between different zone soils and certified soil samples because it includes both the species' (neutral and singly ionized) concentration of the element of interest. The limit of detection using a working calibration curve is found better as compared to its constituent calibration curves (i.e., individual calibration curves). The quantitative results obtained using the working calibration curve is in better agreement with the result of inductively coupled plasma–atomic emission spectroscopy as compared to the result obtained using its constituent calibration curves.     

Study and modeling of the transport mechanism in a semi insulating GaAs Schottky diode

The current through a metal–semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode: diffusion of carriers from the semiconductor into the metal, thermionic emission–diffusion (TED) of carriers across the Schottky barrier and quantum–mechanical tunneling through the barrier. The insulating layer converts the MS device in an MIS device and has a strong influence on its current–voltage (I–V) and the parameters of a Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behavior of Schottky diodes with and without an interfacial insulator layer. These include the particular distribution of interface states, the series resistance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase of the process of thermionic electrons and holes, which will in turn the IV characteristic of the diode, and an overflow maximum value [NT = 3 × 10²⁰] is obtained. The I–V characteristics of Schottky diodes are in the hypothesis of a parabolic summit.