Built-in electric field effect on cyclotron mass of magnetopolarons in a wurtzite In_xGa_（1-x）N/GaN quantum well

The cyclotron mass of magnetopolarons in wurtzite In x Ga 1 x N/GaN quantum well is studied in the presence of an external magnetic field by using the Larsen perturbation method.The effects of the built-in electric field and different phonon modes including interface,confined and half-space phonon modes are considered in our calculation.The results for a zinc-blende quantum well are also given for comparison.It is found that the main contribution to the transition energy comes from half-space and interface phonon modes when the well width is very small while the confined modes play a more important role in a wider well due to the location of the electron wave function.As the well width increases,the cyclotron mass of magnetopolarons first increases to a maximum and then decreases either with or without the built-in electric field in the wurtzite structure and the built-in electric field slightly reduces the cyclotron mass.The variation of cyclotron mass in a zinc-blende structure is similar to that in a wurtzite structure.With the increase of external magnetic field,the cyclotron mass of polarons almost linearly increases.The cyclotron frequency of magnetopolarons is also discussed.     

Effects of Crossed Electric and Magnetic Fields on Shallow Donor Impurity Binding Energy in a Parabolic Quantum Well

We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a parabolic quantum well in the presence of crossed electric and magnetic fields. These homogeneous crossed fields are such that the magnetic field is parallel to the heterostructure layers and the electric field is applied perpendicular to the magnetic field. The dependence of the donor impurity binding energy to the well width and the strength of the electric and magnetic fields are discussed. We hope that the obtained results will provide important improvements in device applications, especially for a suitable choice of both fields in the narrow well widths.     

Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field

The optical response of an inverted InAs/GaSb quantum well is studied theoretically. The influence of an in-plane magnetic field that is applied parallel to the quantum well is considered. This in-plane magnetic field will induce a dynamical polarization even when the electric field component of the external optical field is parallel to the quantum well.The electron–electron interaction in the quantum well system will lead to the de-polarization effect. This effect is found to be important and is taken into account in the calculation of the optical response. It is found that the main feature in the frequency dependence of the velocity–velocity correlation function remains when the velocity considered is parallel to the in-plane magnetic field. When the direction of the velocity is perpendicular to the in-plane magnetic field, the depolarization effect will suppress the oscillatory behavior in the corresponding velocity–velocity correlation function. The in-plane magnetic field can change the band structure of the quantum well drastically from a gapped semiconductor to a no-gapped semi-metal, but it is found that the distribution of the velocity matrix elements or the optical transition matrix elements in the wave vector space has the same two-tadpole topology.     

Large linear magnetoresistance in a new Dirac material BaMnBi_2

Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles.Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials.In this paper,we report the synthesis of high quality single crystals of BaMnBi_2 and investigate the transport properties of the samples.BaMnBi_2 is a metal with an antiferromagnetic transition at T_N = 288 K.The temperature dependence of magnetization displays different behavior from CaMnBi_2 and SrMnBi_2,which suggests the possible different magnetic structure of BaMnBi_2.The Hall data reveals electron-type carriers and a mobility μ(5K)= 1500 cm~2/V·s.Angle-dependent magnetoresistance reveals the quasi-two-dimensional(2D) Fermi surface in BaMnBi_2- A crossover from semiclassical MR~H~2dependence in low field to MR~H dependence in high field,which is attributed to the quantum limit of Dirac fermions,has been observed in magnetoresistance.Our results indicate the existence of Dirac fermions in BaMnBi_2.     

Multiple broadband magnetoelectric response in Terfenol-D/PZT structure

In this paper, a novel magnetoelectric(ME) composite structure is proposed, and the ME response in the structure is measured at the bias magnetic field up to 2000 Oe(1 Oe = 79.5775 A·m~(-1)) and the excitation frequency of alternating magnetic field ranging from 1 kHz to 200 kHz. The ME voltage of each PZT layer is detected. According to the measurement results, the phase differences are observed among three channels and the multi-peak phenomenon appears in each channel. Meanwhile, the results show that the ME structure can stay a relatively high ME response within a wide bandwidth.Besides, the hysteretic loops of three PZT layers are observed. When the frequency of alternating current(AC) magnetic field changes, the maximum value of ME coefficient appears in different layers due to the multiple vibration modes of the structure. Moreover, a finite element analysis is performed to evaluate the resonant frequency of the structure, and the theoretical calculating results accord well with the experimental results. The experiment results suggest that the proposed structure may be a good candidate for designing broadband magnetic field sensors.     

Binding Energies of Excitons in Square Quantum-Well Wires in the Presence of a Magnetic Field

The binding energies of the ground state of excitons in the GaAs/Ga1-xAlxAs square quantum-well wire in the presence of a magnetic field are investigated by using the variational method. It is assumed that the magnetic field is applied parallel to the axis of the wire. The calculations of the binding energy as a fimction of the wire size have been performed for infinite and finite confinement potentials. The contribution of the magnetic field makes the binding energy larger obviously, particularly for the wide wire, and the magnetic field is much more pronounced for the binding energy in a square quantum wire than that in a cylindrical quantum wire. The mismatch of effective masses between the well and the barrier is also considered in the calculation.     

Electron transport across a quantum wire embedding a saw-tooth superlattice

By developing the recursive Green function method, the transport properties through a quantum wire embedding a finite-length saw-tooth superlattice are studied in the presence of magnetic field. The effects of magnetic modulation and the geometric structures of the superlattice on transmission coefficient are discussed. It is shown that resonant peak splitting of this kind of structure is different from that of ‘magnetic' and ‘electric' superlattices in two-dimensional electron gas. The transmission spectrum can be tailored to match requirements through adjusting the size of saw-tooth quantum dot and field strength.     

Spatial Characteristics of Thomson Scattering Spectra in Laser and Magnetic Fields

Spatial characteristics of Thomson scattering spectra are studied for an electron moving in the circularly polarized laser field in the presence of a strong uniform magnetic field. The results show that the angular distributions of the spectra with respect to the azimuthal and polar angles exhibit different symmetries, respectively, which depend on the fields and electron parameters sensitively and significantly. Moreover, for relatively large parameters such as high laser intensity, high magnetic resonance parameter as well as large initial momentum of electron, the two lobes in spectra tend to the laser-propagating direction so that the radiation can be collimated in the forward direction. Furthermore, an important finding is that by choosing the appropriate fields and initial momentum of electron, the high frequency part of the Thomson scattering spectra can reach the frequency range of soft x-ray,in which a high radiation power per solid angle as ～10~(11) a.u. can be obtained.     

Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes

Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.     

Double threshold behaviour of I－V characteristics of CoSi2/Si Schottky contacts

The forward current－voltage (I－V) characteristics of polycrystalline CoSi₂/n-Si(100) Schottky contacts have been measured in a wide temperature range. At low temperatures (≤200K), a plateau-like section is observed in the I－V characteristics around 10^-4A·cm^-2. The current in the small bias region significantly exceeds that expected by the model based on thermionic emission (TE) and a Gaussian distribution of Schottky barrier height (SBH). Such a double threshold behaviour can be explained by the barrier height inhomogeneity, i.e. at low temperatures the current through some patches with low SBH dominates at small bias region. With increasing bias voltage, the Ohmic effect becomes important and the current through the whole junction area exceeds the patch current, thus resulting in a plateau-like section in the I－V curves at moderate bias. For the polycrystalline CoSi₂/Si contacts studied in this paper, the apparent ideality factor of the patch current is much larger than that calculated from the TE model taking the pinch-off effect into account. This suggests that the current flowing through these patches is of the tunnelling type, rather than the thermionic emission type. The experimental I－V characteristics can be fitted reasonably well in the whole temperature region using the model based on tunnelling and pinch-off.     

A Quasi-Symmetric Coupled Quantum Well and Its Electric-Optical Properties

We propose a novel coupled quantum well structure, i.e. a quasi-symmetric coupled quantum well (QSCQW). Based on the demands of optical switching devices for quantum well materials, the QSCQW configuration is further optimized. Consequently, in the case of low applied electric field 25kV/cm and low absorption loss 100cm^-1, a large field-induced refractive index change (for TE mode, n = 0.0106; for TM mode, n = 0.0115) is obtained in the QSCQW structure at the operation wavelength 1550hm. The value is in one or two order of magnitude larger than that in a rectangular quantum well and about 50% larger than that of five-step asymmetric coupled quantum well structure under the same working conditions. The refractive index change obtained with the optimized QSCQW under so low absorption loss and applied electric field is very attractive for semiconductor optical switching devices. This manifests that the QSCQW structure has a great potential for applications in ultra-fast and low-voltage optical switches and in travelling wave modulators.     

Photodetachment of H- near an elastic surface in a magnetic field

This paper investigates the photodetachment of the negative hydrogen ion H near an elastic wall in a magnetic field.The magnetic field confines the perpendicular motion of the electron,which results in a real three-dimensional well for the detached electron.The analytical formulas for the cross section of the photodetachment in the threedimensional quantum well are derived based on both the quantum approach and closed-orbit theory.The magnetic field and the elastic surface lead to two completely different modulations to the cross section of the photodetachment.The oscillation amplitude depends on the strength of the magnetic field,the ion-wall distance and the photon polarization as well.Specially,for the circularly polarized photon-induced photodetachment,the cross sections display a suppressed(E E th) 1/2 threshold law with energy E in the vicinity above Landau energy E th,contrasting with the(E E th) 1/2 threshold law in the presence of only the magnetic field.The semiclassical calculation fits the quantum result quite well,although there are still small deviations.The difference is attributed to the failure of semiclassical mechanics.     

Binding energy of the donor impurities in GaAs-Ga_(1-x)Al_xAs quantum well wires with Morse potential in the presence of electric and magnetic fields

The behavior of a donor in the GaAs–Ga_(1-x)Al_xAs quantum well wire represented by the Morse potential is examined within the framework of the effective-mass approximation. The donor binding energies are numerically calculated for with and without the electric and magnetic fields in order to show their influence on the binding energies. Moreover, how the donor binding energies change for the constant potential parameters(De, re, and a) as well as with the different values of the electric and magnetic field strengths is determined. It is found that the donor binding energy is highly dependent on the external electric and magnetic fields as well as parameters of the Morse potential.     

Influences of spin–orbit interaction on quantum speed limit and entanglement of spin qubits in coupled quantum dots

Quantum speed limit and entanglement of a two-spin Heisenberg XYZ system in an inhomogeneous external magnetic field are investigated. The physical system studied is the excess electron spin in two adjacent quantum dots. The influences of magnetic field inhomogeneity as well as spin–orbit coupling are studied. Moreover, the spin interaction with surrounding magnetic environment is investigated as a non-Markovian process. The spin–orbit interaction provides two important features: the formation of entanglement when two qubits are initially in a separated state and the degradation and rebirth of the entanglement.     

Analysis of asymmetry of the Dαemission spectra under the Zeeman effect in boundary region for D-D experiment on EAST tokamak

In 2015 campaign,deuterium atomic emission spectra(D_α)under the Zeeman effect in boundary region had been measured by a high resolution optical spectroscopic multichannel analysis(OSMA)system based on passive spectroscopy during the deuterium plasma discharge on EAST tokamak,and part of the works about the Zeeman effect on D_αspectra had already been done.However,the asymmetric phenomena of D_αemission spectra under the Zeeman effect were observed in process of analyzing the spectral data.To understand the asymmetric phenomena and acquire the useful local plasma information,an algorithm was proposed and used to analyze the asymmetry of the emission spectra under the Zeeman effect with all polarization components(πand±σ).In the algorithm,the neutral atoms were considered to follow the Maxwell distribution on EAST,and I+σ=I-σwas considered and set.Because of the line-averaged spectra along the viewing chord,the emission spectra were considered from two different regions:low-field side(LFS)and high-field side(HFS).Each spectral line was classified into three energy categories(the cold,warm,and hot)based on different atomic production processes in boundary recycling.The viewing angleθ(between the magnetic field B and the viewing chord),magnetic field B at two spectral emission positions(HFS and LFS)and the Doppler shift of all three energy categories of each spectral line were all considered in the algorithm.The effect of instrument function was also included here.The information of the boundary plasma were acquired,the reason for the asymmetric phenomena was discussed,and the boundary recycling during the discharge were studied in the paper.Based on fitting a statistical data of acquired fitting results,an important conclusion was acquired that the ratio of the spectral line intensity in HFS and LFS was proportional to the square of that of the corresponding magnetic field.     

Quantum transformation of spin structure of a Fe8 nanocluster in ultrastrong magnetic fields

The transformation of the spin structure of a high-spin Fe₈ cluster in a strong magnetic field has been investigated. The magnetization and magnetic susceptibility of the material are calculated at different external magnetic fields and temperatures. It is shown that the magnetic field induces transformation of the spin structure of a Fe₈ cluster from the quasi-ferrimagnetic structure with an average magnetic moment of 20 μ_B per molecule to the quasi-ferromagnetic structure with a magnetic moment of 40 μ_B. Unlike a similar transformation of a Néel ferrimagnet, which is continuous and occurs through an intermediate angular phase, this process in Fe₈ at low temperatures manifests itself as a cascade of discrete quantum jumps, each being the transition accompanied by an increase in the spin number of the complex. At high temperatures, the behavior of the magnetic cluster approaches the cluster behavior described by the classical theory. The nature of quantum jumps is discussed in terms of the magnetic-field-induced energy level crossing in the ground state of a magnetic cluster. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 6, 2000, pp. 1068–1072. Original Russian Text Copyright ? 2000 by Zvezdin, Plis, Popov.     

Transport of Spin-Polarized Current Through a Mesoscopic Ring with Two Leads Induced by Aharonov-Bohm and Aharonov-Casher Phases

We study the transport of spin-polarized current induced by the Aharonov-Bohm and Aharonov-Casher phases in a mesoscopic ring with two leads in the presence of a cylindrically symmetric electric field and the magnetic flux at the centre of the same ring. An exact solution for the quantum transport is obtained. It is shown that the transport spin-polarized current and its polarizability can be controlled by the electric field and the magnetic flux as well.     

Landau level transitions in InAs/AlSb/GaSb quantum wells

The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the 14-band ?? · ?? approach without making the axial approximation.At zero magnetic field, for a quantum well with a wide In As layer and a wide GaSb layer, the energy of an electron-like subband can be lower than the energy of hole-like subbands. As the strength of the magnetic field increases, the Landau levels of this electron-like subband grow in energy and intersect the Landau levels of the hole-like subbands. The electron–hole hybridization leads to a series of anti-crossing splittings of the Landau levels. The magnetic field dependence of some dominant transitions is shown with their corresponding initial-states and final-states indicated. The dominant transitions at high fields can be roughly viewed as two spin-split Landau level transitions with many electron–hole hybridization-induced splittings. When the magnetic field is tilted, the electron-like Landau level transitions show additional anti-crossing splittings due to the subband-Landau level coupling.     

Influence of DCM dye doping on the magnetic field dependent electroluminescence in organic light emitting diodes

The DCM dye doped organic electroluminescence devices with structure of ITO/NPB/Alq 3 : DCM/Alq 3 /LiF/Al were fabricated. From 15 K to room temperature, the magnetic field dependent of electroluminescence (MEL) of devices was investigated. Our observations indicated that the MEL is composed of two effects in different regimes: a low field (0≤B≤40 mT) effect and a high field (B 40 mT) effect. For undoped devices, the low field effect exhibits a rapid rising with the increasing field, and the high field effect shows a slow increase and gradually saturates at room temperature. For doped devices, the low field rapid increase is also present, whereas the high field effect displays a decrease with the increasing field. The larger the injection current is, the more apparent the high field decrease is. In addition, the doped device demonstrates less temperature dependence of the high field effect than undoped device, although the undoped devices also present high field decrease of electroluminescence at low temperatures (T≤150 K). Based on the energy level trapping effect due to dye doping and magnetic field modulated triplet exciton annihilation, the experimental results are carefully explained.