A microchip-laser-pumped DFB-polymer-dye laser

A miniaturized, high repetition rate, picosecond all solid state photo-induced distributed feedback (DFB) polymer-dye laser is described by applying a passively Q-switched and frequency-doubled Cr⁴⁺:Nd³⁺:YAG-microchip laser (pulse width Δτ=540 ps, repetition rate ν=3 kHz, pump energy E_pump=0.15 μJ) as a pump source. A poly-methylmethacrylate film doped with rhodamine B dye serves as active medium. The DFB-laser pulses are temporally and spectrally characterized, and the stability of the thin polymer/dye film at high repetition rates is analyzed. The shortest DFB-laser pulses obtained have a duration of 11 ps. After the emission of 350000 pulses the intensity of the DFB-laser output has decreased by a factor of two and the pulse duration has increased by a factor of 1.2. For single DFB-laser pulses of 20-ps duration the spectral bandwidth is measured to be Δλ=0.03 nm, which is only 0.005 nm above the calculated Fourier limit assuming a Gaussian profile for the temporal shape of the pulses. Coarse wavelength tuning of the DFB laser between 590 and 619 nm is done by turning the prism. Additionally, a fine tuning of the DFB-polymer-laser wavelength is achieved by changing the temperature of the polymer/dye layer (=-0.05 nm/°C) in the range from 20 to 40 °C. Received: 1 March 2001 / Revised version: 23 May 2001 / Published online: 18 July 2001     

Distributed feedback dye laser holographically induced in improved organic–inorganic photocurable nanocomposites

Distributed feedback (DFB) lasing in permanent volume transmission gratings formed in a laser dye-doped organic–inorganic nanocomposite has been investigated. DFB laser cavities were fabricated using one-step two-beam holographic exposure of Pyrromethene 567 (PM567) doped photopolymerizable acrylate monomers containing inorganic (LaPO₄) nanoparticles. Compared to the formulation previously utilized, the material composition presented provides longer lifetime of the laser. Spectral and polarization properties, input–output and stability characteristics of the laser output have been investigated by varying the material composition and the patterning parameters. DFB lasing emission of the second and the third diffraction orders has been demonstrated. The spectral linewidth of ∼0.08 nm has been observed at a pump energy threshold of about 0.2 μJ/pulse for the second-order DFB lasing when pumped with 532 nm 500 ps laser pulses. Spectral tuning of the lasing output over ∼56 and ∼7 nm was obtained by varying the grating period and the content of inorganic nanoparticles in the polymer matrix, respectively.     

Solid-state dye laser with moiré gratings

We fabricated distributed-feedback (DFB) solid-state dye lasers with moiré gratings. We formed a moiré grating pattern by superimposing two grating patterns with a rotation angle. The moiré gratings were fabricated by an “etchless” process utilizing a two-beam interference method. The gratings were coated with solidified rhodamine-B. The five laser devices were pumped with the second harmonic generation of a Nd:YAG laser and we obtained narrow-banded laser oscillations at 590, 600, 610, 620, and 630 nm wavelength. Full widths at half maximum of laser spectra were less than 0.5 nm. The results indicated that a moiré fringe can function as a resonator of DFB solid-state dye lasers.     

Coherent electrically excited organic semiconductors: coherent or laser emission?

Recent experimental results demonstrating coherent emission from an electrically-excited pulsed dye-doped organic semiconductor interferometric emitter, are discussed from a coherence and a laser perspective. Examination of available results indicates that there is sufficient evidence to classify the reported emission as being equivalent to broadband dye laser radiation. From a practical perspective, however, this is an interferometric organic semiconductor emitter that yields a spatially coherent beam (Δθ≈ 2.53 mrad or 1.1 times the diffraction limit) and an emission linewidth comparable with broadband dye lasers (Δλ≈ 11 nm at half width). Geometrical dimensions, and electrical excitation parameters, for a significantly smaller interferometric organic emitter are suggested. PACS 42.25.Hz; 42.25.Kb; 42.55.Mv; 42.60.Da; 42.60.Jf     

Integrated self‐aligned conjugated polymer fiber laser devices

In this letter we present a fully integrated self‐aligned distributed feedback (DFB) fiber laser device, which was directly imprinted in the conjugated polymer poly[2‐methoxy‐5 (2‐ethyl‐hexyloxy)‐1,4‐phenylenevinylene] (MEH‐PPV) on the top of optical fibers by using the soft lithographic technique of “liquid imprinting”. For this process master gratings (360 and 380 nm) for the feedback structure were fabricated via e‐beam lithography, transferred to an elastomeric stamp and used to imprint the grating into the highly luminescent conjugated polymer. Such second order gratings were photo‐pumped with a frequency doubled Nd:YAG laser, the laser emission (around 640 nm, depending on the used grating) was directly coupled into the waveguide and detected via a CCD spectrometer at the end of the fiber. The threshold of the laser devices was found to be in the range of 4.3 mJ/cm² and exhibited a line width of approximately 2 nm. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Holographic recording by excitation of metastable electronic states in Na2[Fe(CN)5NO]·2H2O: a new photorefractive effect

Elementary holographic phase gratings can be written in single crystals of Na₂[Fe(CN)₅NO]·2H₂O, sodiumnitroprusside, by excitation of metastable electronic states in the blue–green spectral range. For light polarized parallel to the crystallographic a and b axes of the orthorhombic crystal the light-induced modulation of the refractive index reaches Δn≈2×10^-3 at λ=514.5 nm. Although the largest population of the metastable states is reached for light polarized parallel to the crystallographic c axis, a photorefractive response is not observed. In contrast to electro-optic photorefractive materials the photorefractive effect depends mono-exponentially on the exposure and on the modulation of the incident light interference pattern. Beam-coupling experiments demonstrate that written gratings are in phase with the interference pattern in correspondence with the fact that the excitation of the metastable electronic states is local. The width of the rocking curve shows that the holographic gratings are written completely over the volume of the crystal. Variations of the wavelengths within the excitation range as well as of the crystal thickness do not influence the maximum photorefractive response. Investigations on the grating vector of the written gratings show unambiguously that charge migration is not responsible for the photorefractive effect. Received: 18 November 1998 / Revised version: 26 January 1999 / Published online: 12 April 1999     

Peculiarities of spontaneous grating generation in light-sensitive waveguide layers during holographic grating formation

The generation of spontaneous (noise) gratings during the simultaneous formation of a holographic grating in thin (on the order of the cutoff thickness of the TE₀ waveguide mode) AgCl-Ag films by two laser beams with λ = 532 nm and polarization vectors that make an angle of 45° with the plane of incidence have been studied. The electron microscopy images and diffraction patterns have revealed a significant difference of the spontaneous-grating structure from the structure obtained under irradiation by one laser beam. The spontaneous gratings have a significant spread in the directions of their wave vector, and the diffraction pattern (recorded using a probe beam with λ = 337 nm) has the form of a bundle of diverging arcs that intersect at one point. This difference is caused by self-diffraction from the holographic grating, which is responsible for the main diffraction peaks with odd orders, the growth of spontaneous gratings because of the interference of the beams diffracted by the holographic grating with the waveguide TE₀ modes scattered in the film, and silver transport to the interference minima. The diffraction patterns are quantitatively analyzed and the period of the new (formed under two-beam irradiation) spontaneous gratings is calculated. The calculation results are in good agreement with the experimental data.     

Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm

A distributed feedback (DFB) laser diode emitting at 785 nm was tested and applied as a light source for shifted excitation Raman difference spectroscopy (SERDS). Due to the physical properties of the laser diode, it was possible to shift the emission wavelength by 8 cm^-1 (0.5 nm) required for our SERDS measurements by simply changing the injection current. The internal grating ensured single mode operation at both wavelength with the frequency stability of ±0.06 cm^-1 (0.004 nm) required for high resolution Raman spectroscopic applications. The shifted spectra were used for calculating enhanced Raman spectra being obscured by a strong scattering background. A 16 dB (≈38 fold) improvement of the signal-to-background noise S̄/σ_B was demonstrated using blackboard chalk as a sample. The tunable DFB laser is a versatile excitation source for SERDS, which could be used in any dispersive Raman system to subtract fluorescence contributions and scattering background. PACS 82.80.Gk; 42.55.-f; 42.64.Fi     

Holographic DFB laser with fan-shaped grating for a spectrofluorimeter

A method for recording fan-shaped transmitting phase holographic gratings that ensure tuning of the wavelength of emission for a DFB (distributed-feedback) dye laser is presented. Traditional optical elements are used in the scheme of grating recording. A change in the degree of grating fanning is reached here without replacement of gratings. The possibility of obtaining frequency-tuned emission by means of the fan-shaped gratings created is demonstrated experimentally. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 1, pp. 48–51, January–February, 2000.     

Antimonide-based lasers and DFB laser diodes in the 2–2.7 μm wavelength range for absorption spectroscopy

We report on Fabry–Pérot semiconductor lasers and single frequency distributed feedback lasers based on GaInAsSb/AlGaAsSb quantum wells. The laser structures were grown by molecular beam epitaxy on GaSb substrates. The devices were etched either by wet process or by inductively coupled plasma (ICP) process. Electron-beam lithography was used to deposit a metal Bragg grating on each side of the laser ridge to fabricate the DFB lasers. The devices all operate in the continuous wave regime at room temperature with a single frequency emission above 2.6 μm and good tuning properties, making them well adapted to tunable diode laser absorption spectroscopy. PACS 42.55.Px; 42.62.Fi     

Ⅲ–Ⅴ/Si Hybrid Laser Array with DBR on Si Waveguide

We report an eight-channel silicon evanescent laser array operating at continuous wave under room temperature conditions using the selective-area metal bonding technique.The laser array is realized by evanescentl.y coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed Bragg reflector gratings.The lasers have emission peak wavelengths in a range of 1537-1543 nm with a wavelength spacing of about 1.0 nm.The thermal impedances Z_T of these hybrid lasers are evidently lower than those DFB counterparts     

Compact diode-side-pumped Nd:YVO<Subscript>4</Subscript> laser in grazing-incidence configuration

The analysis of compact CW diode-side-pumped grazing-incidence-geometry Nd:YVO₄ laser designs is presented. An output power of 5 W (λ=1064 nm) was produced at 17 W of diode pump (conversion efficiency of 30%) in single transverse TEM₀₀ mode operation at high laser beam quality (M_x ²≈1.05 and M_y ²≈1.01). The resonator geometry was analyzed by applying generalized 4×4 matrix modeling of the spatial mode size, including the impact on the laser operation of cavity astigmatism and a thermal lens in the laser slab. The simplicity and compactness of the laser cavities allow their use for technological applications. Received: 31 July 2002 / Published online: 22 January 2003 RID="*" ID="*"Corresponding author. Fax: +44-20/7594-7744, E-mail: m.damzen@ic.ac.uk     

Single-frequency Ti:Er:LiNbO3 distributed Bragg reflector waveguide laser with thermally fixed photorefractive cavity

The first single-frequency Ti:Er:LiNbO₃ distributed Bragg reflector waveguide laser with two thermally fixed photorefractive gratings as resonator mirrors is reported. The optically pumped (λ_p=1480 nm,120-mW incident power) laser emits up to 1.1 mW at λ_s=1561.1 nm. The threshold pump power is 70 mW. Received: 7 June 2001 / Published online: 30 October 2001     

Site-selective spectroscopy of Er3+:Ti:LiNbO3 waveguides

Starting from previous investigations in LiNbO₃ bulk crystals, we studied the optical properties of Er³⁺ ions in Ti:LiNbO₃ channel waveguides and investigated the waveguide-specific lattice environment of the Er³⁺ ions (“sites”) caused by the doping method used and the presence of a large number of Ti⁴⁺ ions. For that purpose the method of combined excitation–emission spectroscopy was applied for the first time to waveguides at low temperatures. Comparing the spectroscopic results obtained for the green, red, and near-IR luminescence (λ≈550, ≈650 and ≈980 nm) under direct (450 nm), 2-step (980 nm), and 3-step (1.5 μm) laser excitation, we found several distinguishable Er³⁺ sites which in terms of energy levels and relative numbers are similar to those in bulk material, but exhibit significantly different up-conversion efficiencies and strongly inhomogeneously broadened transitions. Moreover, we were able to distinguish isolated and cluster Er³⁺ sites by their characteristic excitation and emission transition energies and studied the respective excitation/relaxation channels. The cluster sites are most efficient in the up-conversion process, especially under 3-step excitation. Using accepted microscopic models for Er³⁺ and Ti⁴⁺ incorporation into the LiNbO₃ crystal lattice, the site distribution and up-conversion mechanisms are elucidated and their consequences for laser applications in different spectral regions are discussed. Received: 16 November 2000 / Published online: 21 March 2001     

Linewidth studies on Cd+ 636.0 nm and 537.8 nm lines excited in a He-Cd hollow cathode discharge

Hollow cathode (HC) lasers usually operate in a single axial mode without any optical selection. This is attributed to the large homogeneous linewidth of the gain curve due to the relatively high filling pressure of these lasers. Collisional and Doppler broadening (Δν_C and Δν_D) of the Cd⁺ 636 nm and Cd⁺ 538 nm lines (laser transitions of the HeCd⁺ laser) excited in a HC discharge tube were determined using a Fabry–Perot interferometer technique. It was found that in the pressure range 7–25 mbar Δν_D was nearly constant, while, as expected, Δν_C increased linearly with pressure. The broadening constants were α(636 nm)= (47±2) MHz/mbarand α(538 nm)=(11.8±0.5) MHz/mbar. The first constant is large enough to explain single-mode operation of the red HeCd⁺ laser; but in the case of the green laser, the exact reason for the single-mode operation remained unclear. Received: 23 November 2000 / Revised version: 30 March 2001 / Published online: 7 June 2001     

Potential for micromachined actuation of ultra-wide continuously tunable optoelectronic devices

Tailored scaling represents a principle of success that, both in nature and in technology, allows the effectiveness of physical effects to be enhanced. Mutation and selection in nature are imitated in technology, e.g. by model calculation and design. Proper scaling of dimensions in natural photonic crystals and our fabricated artificial 1D photonic crystals (DBRs, distributed Bragg reflectors) enable efficient diffractive interaction in a specific spectral range. For our optical microsystems we illustrate that tailored miniaturization may also increase the mechanical stability and the effectiveness of spectral tuning by thermal and electrostatic actuation, since the relative significance of the fundamental physical forces involved considerably changes with scaling. These basic physical principles are rigorously applied in micromachined 1.55-μm vertical-resonator-based devices. We modeled, implemented and characterized 1.55-μm micromachined optical filters and vertical-cavity surface-emitting laser devices capable of wide, monotonic and kink-free tuning by a single control parameter. Tuning is achieved by mechanical actuation of one or several air-gaps that are part of the vertical resonator including two ultra-highly reflective DBR mirrors of strong refractive index contrast: (i) Δn=2.17 for InP/air-gap DBRs (3.5 periods) using GaInAs sacrificial layers and (ii) Δn=0.5 for Si₃N₄/SiO₂ DBRs (12 periods) with a polymer sacrificial layer to implement the air-cavity. In semiconductor multiple air-gap filters, a continuous tuning of >8% of the absolute wavelength is obtained. Varying the reverse voltage (U=0–5 V) between the membranes (electrostatic actuation), a tuning range of >110 nm was obtained for a large number of devices. The correlation of the wavelength and the applied voltage is accurately reproducible without any hysteresis. In two filters, tuning of 127 and 130 nm was observed for about ΔU=7 V. The extremely wide tuning range and the very small voltage required are record values to the best of our knowledge. For thermally actuated dielectric filters based on polymer sacrificial layers, Δλ/ΔU=-7 nm/V is found. Received: 10 May 2002 / Published online: 8 August 2002     

InP-based optoelectronic devices for optical fiber communications

In this contribution we report the research and development of 1.55 μm InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 μm and 1.55 μm InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7–10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 μm and 1.55 μm InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. Kunio Tada and Yoshiaki Nakano for their cooperation in the fabrication of the novel gain-coupled DFB lasers.     

Long-wavelength GaInAsSb/AlGaAsSb DFB lasers emitting near 2.6 μm

We have successfully fabricated and characterized room temperature continuous wave (cw) GaInAsSb/AlGaAsSb distributed feedback lasers emitting in the wavelength region between 2.499 and 2.573 μm. To the best of our knowledge, this is the longest emission wavelength realized with a GaSb-based DFB laser diode. The laser structure used for DFB processing was grown by solid source molecular beam epitaxy. A DFB concept requiring no subsequent overgrowth step was used by defining first-order Cr-Bragg gratings laterally patterned to a ridge waveguide. Threshold currents smaller than 60 mA and room temperature cw output powers up to 6.5 mW were obtained. The laser diodes show single mode emission with side mode suppression ratios (SMSR) of up to 32 dB.     

Interaction of laser radiation with TNT with respect to the laser neutralisation of AP mines

According to UN estimations there are between 80 and 115 million activated landmines worldwide. These mines, or other unexploded ordnance (UXO), can be triggered accidentally and kill or injure more than 2000 civilians per month. The most common explosive in these mines is trinitrotoluene (TNT). In this paper, the potential of some of the most promising lasers for mine neutralisation is investigated, namely an ArF laser, a KrF excimer laser and a Nd:YAG solid-state laser. We have studied the interaction between laser beams emitting at λ=193 nm, 248 nm and 1060 nm and a bare solid sample of TNT of approximately 15 mg. Using pulsed excimer radiation at λ=193 nm, with an energy density up to 1 J/mm², ablation of the TNT without any deflagration has been achieved. At λ=248 nm, using the KrF excimer laser with a pulse duration of 30 ns and a repetition rate of 5 Hz, the TNT sample started melting and burning after an irradiation of 10 s. Preliminary results with the Nd:YAG solid-state laser operating in cw emission have shown that the irradiated sample exhibits the desired burning behaviour even after the exposure is stopped. Received: 14 December 2000 / Accepted: 18 December 2000 / Published online: 20 June 2001     

Polymeric distributed-feedback resonator with sub-micrometer fibers fabricated by two-photon induced photopolymerization

The authors observed amplified spontaneous emission (ASE) action with an ultra-low threshold under optical excitation from an active polymeric distributed-feedback (DFB) resonator which consists of sub-micrometer fiber grating. A dendrimer was used to modify the laser dye and increased its concentration up to 4.95 wt. % in the photocured resin. The DFB resonator was fabricated by using two-photon induced polymerization (TPIP) technique. The ASE at 556 nm was observed with a threshold of 0.30 μJ/pulse due to fourth-order diffraction feedback of the optical gain. This DFB could be expected to open a way for the fabrication and application of microscale polymeric mirrorless laser. PACS 42.70.-a; 81.40.Tv; 82.35.Ej; 82.50.Pt; 42.60.Da