Improved performance of dye sensitized ZnO nanorod solar cells prepared using TiO2 seed layer

Zinc oxide (ZnO) nanorods of different structures have been grown on indium-doped tin oxide substrates by using TiO₂ as seed layer. The ZnO nanorods have been prepared using TiO₂ seed layers annealed at different temperatures via a simple sol–gel method. The X-ray diffraction result indicates that the prepared samples are of wurtzite structure. Dye sensitized solar cells have been fabricated using the prepared ZnO nanorods. The open circuit voltage, short circuit current density, fill factor, and power conversion efficiency of the ZnO nanorod based dye sensitized solar cells prepared using TiO₂ seed layers annealed at different temperatures have been determined. The improvement in power conversion efficiency may be due to the flower like structured ZnO nanorods with smaller diameter and large specific surface area which paves way for the efficient electron transfer in hybrid solar cells.     

Enhanced UV photosensing properties of ZnO nanowires prepared by electrodeposition and atomic layer deposition

A new process enabling the synthesis of zinc oxide (ZnO) and Al-doped ZnO nanowires (NWs) for photosensing applications is reported. By combining atomic layer deposition (ALD) for the seed layer preparation and electrodeposition for the NW growth, high-quality ZnO nanomaterials were prepared and tested as ultraviolet (UV) sensors. The obtained NWs are grown as arrays perpendicular to the substrate surface and present diameters between 70 and 130 nm depending on the Al doping, as seen from scanning electron microscopy (SEM) studies. Their hexagonal microstructure has been determined using X-ray diffraction and Raman spectroscopy. An excellent performance in UV sensing has been observed for the ZnO NWs with low Al doping, and a maximal photoresponse current of 11.1 mA has been measured. In addition, initial studies on the stability have shown that the NW photoresponse currents are stable, even after ten UV on/off cycles.     

Enhancing Electron Collection Efficiency and Effective Diffusion Length in Dye‐Sensitized Solar Cells

Intensity‐modulated photocurrent spectroscopy and intensity‐modulated photovoltage spectroscopy are employed to measure the dynamics of electron transport and recombination in the ZnO nanowire (NW) array‐ZnO/layered basic zinc acetate (LBZA) nanoparticle (NP) composite dye‐sensitized solar cells (DSSCs). The roles of the vertical ZnO NWs and insulating LBZA in the electron collection and transport in DSSCs are investigated by comparing the results to those in the TiO₂–NP, horizontal TiO₂–NW and vertical ZnO–NW‐array DSSCs. The electron transport rate and electron lifetime in the ZnO NW/NP composite DSSC are superior to those in the conventional TiO₂–NP cell due to the existence of the vertical ZnO NWs and insulating LBZA. It indicates that the ZnO NW/NP composite anode is able to sustain efficient electron collection over much greater thickness than the TiO₂–NP cell does. Consequently, a larger effective electron diffusion length is available in the ZnO composite DSSC.     

One-step electrodeposition of Ag-decorated ZnO nanowires

A new route for synthesizing Ag-decorated ZnO nanowires (NWs) on conductive glass substrates using a one-step electrodeposition technique is described here. The structural, optical, and photoelectrochemical properties of Ag-decorated ZnO nanowires were studied in detail using techniques such X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, UV-visible spectroscopy, photoluminescence, and photoelectrochemical measurements. Both pure and Ag-decorated ZnO nanowires were found to crystallize in the wurtzite structure, irrespective of their Ag contents. Increasing the Ag content from pure ZnO NWs to 3% Ag ZnO NWs decreases the photoluminescence intensity, shifts the optical band gap to the red, and increases the photocurrent up to threefold. This behavior was attributed to the surface plasmon resonance effect induced by the Ag nanoparticles, which inhibits charge recombination and improves charge transport on the ZnO surface.     

Characteristics of Ga and Ag-doped ZnO-based nanowires for an ethanol gas sensor prepared by hot-walled pulsed laser deposition

Pure ZnO and Ga (3 % w/w) and Ag (3 % w/w)-doped ZnO nanowires (NWs) have been grown by use of the hot-walled pulse laser deposition technique. The doping characteristics of Ga and Ag in ZnO NWs were analyzed by use of photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) and the results were compared with those for pure ZnO NWs. We also fabricated gas sensors by use of pure ZnO and Ga and Ag-doped ZnO NWs. Among the NW sensors, the Ag-doped NW sensor was most sensitive. We synthesized the NWs on sapphire substrates under different conditions, for example temperature, time, gas flow, and distance between target and substrate. The diameter and length of NWs were <100 nm and several microns, respectively. To analyze the effect of Ag doping on ZnO NWs, we investigated the near band edge emission by use of low-temperature PL and XPS. Significant changes in resistance and sensitivity were observed. When the sensors were used at 300 °C for detection of 1 ppm ethanol vapor, the sensitivity of the pure ZnO and the Ga and Ag-doped ZnO NW gas sensors was 97, 48, and 203 %, respectively.     

Fabrication of urchin‐like Ag/ZnO hierarchical nano/microstructures based on galvanic replacement mechanism and their enhanced photocatalytic properties

Urchin‐like Ag/ZnO hierarchical nano/microstructures have been synthesized through a facile low‐temperature hydrothermal growth method based on galvanic replacement mechanism. The experimental results show that the urchin‐like Ag/ZnO heterostructures are formed through the epitaxial growth of ZnO nanorods on the {111} facets of Ag nanoparticles along their own c‐axis. The photocatalytic properties of the products were evaluated by the degradation of RhB dye solution under ultraviolet irradiation, and the results show that the products exhibit significantly enhanced photocatalytic properties comparing with pure ZnO nanorods. The products with a Ag content of 35.64 atom % prepared with a Ag⁺ concentration in solution of 5 mM exhibit surprisingly high degradation rate (99.5%) for RhB dye solution (4 mg/L) after photocatalytic reaction for only 14 min under ultraviolet irradiation. The Schottky barrier formed at the metal‐semiconductor interfaces improves the segregation of charges and prevents the charge recombination, and thus significantly enhances the photocatalytic activities of the products. On the other hand, the high stability of the urchin‐like Ag/ZnO hierarchical nano/microstructures can effectively prevent the aggregation of nanostructures with simultaneously preserving high photocatalytic properties due to the existence of nanosized unites. Copyright © 2016 John Wiley & Sons, Ltd.     

Ultrafast Photodynamics of the Indoline Dye D149 Adsorbed to Porous ZnO in Dye‐Sensitized Solar Cells

We investigate the ultrafast dynamics of the photoinduced electron transfer between surface‐adsorbed indoline D149 dye and porous ZnO as used in the working electrodes of dye‐sensitized solar cells. Transient absorption spectroscopy was conducted on the dye in solution, on solid state samples and for the latter in contact to a I^?/I₃^? redox electrolyte typical for dye‐sensitized solar cells to elucidate the effect of each component in the observed dynamics. D149 in a solution of 1:1 acetonitrile and tert‐butyl alcohol shows excited‐state lifetimes of 300±50 ps. This signature is severely quenched when D149 is adsorbed to ZnO, with the fastest component of the decay trace measured at 150±20 fs due to the charge‐transfer mechanism. Absorption bands of the oxidized dye molecule were investigated to determine regeneration times which are in excess of 1 ns. The addition of the redox electrolyte to the system results in faster regeneration times, of the order of 1 ns.     

Magnesium doped ZnO nanoparticles embedded ZnO nanorod hybrid electrodes for dye sensitized solar cells

We report a novel type of Mg doped ZnO nanoparticles (ZMP) embedded on hydrothermally grown ZnO nanorod (ZR) based photoanode dye sensitized solar cells. The crystallinity, composition and morphology of the photoanodes were characterized by using X-ray diffraction analysis, X-ray photoelectron spectroscopy and scanning electron microscopy. The amount of dye absorbed in the photoanode was observed using UV visible spectral analysis. The improved internal resistance and charge-transfer kinetics of the fabricated cells were analyzed using electrochemical impedance spectroscopy. The ZMP embedded electrode of low thickness (~2.5 μm) gained an enhanced short-circuit current density of 8.56 mA/cm², open-circuit photo voltage of 0.71 V, fill factor of 0.51, and overall conversion efficiency of 2.91 % under 1 sun illumination. This shows high conversion efficiency and performance than that of ZnO nanorod (η ~ 0.22 %) and bare ZnO nanoparticles (ZP) embedded ZnO nanorod (η ~ 1.04 %) based cells. The presence of Mg ions in the ZnO nanoparticle hinders the interfacial recombination of the photo-excited electrons with the electrolyte and also shows better dye absorption than that of ZR. These factors can significantly enhance solar-cell performance and increase the efficiency of the ZMP based dye sensitized solar cells.     

Hierarchically Structured ZnO Nanorods as an Efficient Photoanode for Dye‐Sensitized Solar Cells

Hierarchical ZnO nanorods composed of interconnected nanoparticles, which were synthesized by controlling precursor concentrations in a solvothermally assisted process, were exploited as photoanodes in dye‐sensitized solar cells (DSCs). The as‐prepared hierarchical nanorods showed greatly enhanced light scattering compared to ZnO nanoparticles for boosting light harvesting while maintaining sufficient dye‐adsorption capability. The charge‐transfer characteristics were studied by electrochemical impedance measurements, and reduced electron recombination and longer electron lifetime were observed for the ZnO nanorods. Photovoltaic characterization demonstrated that DSCs utilizing the hierarchical nanorods significantly improved the overall conversion efficiency by 34 % compared to nanoparticle‐based DSCs.     

Synthesis and alignment of silver nanorods and nanowires and the formation of Pt, Pd, and core/shell structures by galvanic exchange directly on surfaces

Here we describe the synthesis of Ag nanorods (NRs) (aspect ratio <20) and nanowires (NWs) (aspect ratio > or =20) directly on surfaces by seed-mediated growth. The procedure involves attaching gold seed nanoparticles (Au NPs) to 3-mercaptopropyltrimethoxysilane (MPTMS)-functionalized silicon or glass surfaces and growing them into NRs/NWs by placing the substrates into a solution containing cetyltrimethylammonium bromide (CTAB), silver nitrate, and ascorbic acid with the pH ranging from 7 to 12. Under our conditions, Ag NRs/NWs grow optimally at pH 10.6 with a 3% yield, where spherical, triangular, and hexagonal nanostructures represent the other byproducts. The length of Ag NRs/NWs ranges from 50 nm to more than 10 microm, the aspect ratio (AR) ranges from 1.4 to >300, and the average diameter is approximately 35 nm. Approximately 40% of the 1D structures are NRs, and 60% are NWs as defined by their ARs. We also report the alignment of Ag NRs/NWs directly on surfaces by growing the structures on amine-functionalized Si(100) surfaces after an amidation reaction with acetic acid and a method to improve the percentage of Ag NRs/NWs on the surface by removing structures of other shapes with adhesive tape. Surface-grown Ag NRs/NWs also react with salts of palladium, platinum, and gold via galvanic exchange reactions to form high-surface-area 1D structures of the corresponding metal. The combination of the seed-mediated growth of Ag on Au NRs followed by the galvanic exchange of Ag with Pd leads to interesting core/shell NRs grown directly on surfaces. We used scanning electron microscopy, UV-vis spectroscopy, and X-ray photoelectron spectroscopy to characterize the surface-grown nanostructures.     

ZnO/eosin-Y混合薄膜的生长机理和形态

Thin hybrid films of ZnO/eosin-Y were prepared by electrodeposition at-0.8 and-0.9 V in aqueous and non-aqueous baths at temperatures ranging from 40 to 90 ℃ with dye concentrations of 100 and 400 μmol·L-1.The films were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),energy-dispersive X-ray analysis (EDX),and absorption spectroscopy.The films prepared in a non-aqueous bath were non-porous and did not adsorb dye molecules on their surface.However,the films grown in aqueous media were porous in nature and adsorbed dye during the deposition of ZnO.Preferential growth of the film along the (002) face was observed,and the highest crystallinity was achieved when the film was deposited at 60 ℃.The maximum absorption was achieved for the films grown at 60 to 70 ℃,a deposition potential of-0.9 V,and a dye concentration of 100 μmol·L-1.     

Synthesis of ZnO nanomaterials with controlled morphology and their photoelectrochemical properties

Three morphologies of ZnO nanomaterials (ZnO-hand grenade, ZnO-rod and ZnO-particle) were synthesized via a facile hydrothermal method. The as prepared ZnO nanomaterials were used as photoelectrodes to fabricate dye sensitized solar cells (DSSCs). Of the three samples, ZnO-particle displays the highest photovoltaic conversion efficiency which can be attributed to the high surface area to absorb light more efficiently. Intensity modulated photocurrent spectroscopy (IMPS), and intensity-modulated voltage spectroscopy (IMVS) indicate that ZnO-rod provides superior electron transfer kinetics: fast electron transfer and long electron lifetimes with suppressed recombination.     

Toward highly efficient CdS/CdSe quantum dots-sensitized solar cells incorporating ordered photoanodes on transparent conductive substrates

A series of ordered photoanodic architectures (including ordered TiO(2) nanotube arrays (TNT), ZnO nanorods, ZnO/TiO(2) core/shell nanostructures) for CdS/CdSe sensitized solar cells (QDSCs), were fabricated directly on transparent conductive oxide glasses by a facile sol-gel assisted template process. The morphologies, optical and electrical properties of TNTs and CdS/CdSe co-sensitized TNTs have been demonstrated. The effect of CdSe deposition time on the cell performance was clarified, and the growth mechanism of the CdSe quantum dots on the surface of the TNTs has been proposed as well. Furthermore, the evolution of open-circuit photovoltage (V(oc)) towards CdSe deposition time has been investigated by electrochemical impedance spectroscopy (EIS). A promising light-to-electricity conversion efficiency of up to 4.61% has been achieved with 3 μm long TNT arrays, which is the best record for sandwich-type ordered TNT-based QDSCs.     

Characterizing the Role of Iodine Doping in Improving Photovoltaic Performance of Dye‐Sensitized Hierarchically Structured ZnO Solar Cells

We report two novel types of hierarchically structured iodine‐doped ZnO (I? ZnO)‐based dye‐sensitized solar cells (DSCs) using indoline D205 and the ruthenium complex N719 as sensitizers. It was found that iodine doping boosts the efficiencies of D205 I? ZnO and N719 I? ZnO DSCs with an enhancement of 20.3 and 17.9 %, respectively, compared to the undoped versions. Transient absorption spectra demonstrated that iodine doping impels an increase in the decay time of I? ZnO, favoring enhanced exciton life. Mott–Schottky analysis results indicated a negative shift of the flat‐band potential (V_fb) of ZnO, caused by iodine doping, and this shift correlated with the enhancement of the open circuit voltage (V_oc). To reveal the effect of iodine doping on the effective separation of e^?‐h⁺ pairs which is responsible for cell efficiency, direct visualization of light‐induced changes in the surface potential between I? ZnO particles and dye molecules were traced by Kelvin probe force microscopy. We found that potential changes of iodine‐doped ZnO films by irradiation were above one hundred millivolts and thus significantly greater. In order to correlate enhanced cell performance with iodine doping, electrochemical impedance spectroscopy, incident‐photon‐current efficiency, and cyclic voltammetry investigations on I? ZnO cells were carried out. The results revealed several favorable features of I? ZnO cells, that is, longer electron lifetime, lower charge‐transfer resistance, stronger peak current, and extended visible light harvest, all of which serve to promote cell performance.     

Environmentally Benign and Efficient Ag2S‐ZnO Nanowires as Photoanodes for Solar Cells: Comparison with CdS‐ZnO Nanowires

In this work, we develop a low‐temperature, facile solution reaction route for the fabrication of quantum‐dot‐sensitized solar cells (QDSSCs) containing Ag₂S‐ZnO nanowires (NWs), simultaneously ensuring low manufacturing costs and environmental safety. For comparison, a CdS‐ZnO NW photoanode was also prepared using the layer‐by‐layer growth method. Ultraviolet photoelectron spectroscopy analysis revealed type‐II band alignments for the band structures of both photoanodes which facilitate electron transfer/collection. Compared to CdS‐ZnO QDSSCs, Ag₂S‐ZnO QDSSCs exhibit a considerably higher short‐circuit current density (J_sc) and a strongly enhanced light‐harvesting efficiency, but lower open‐circuit voltages (V_oc), resulting in almost the same power‐conversion efficiency of 1.2 %. Through this work, we demonstrate Ag₂S as an efficient quantum‐dot‐sensitizing material that has the potential to replace Cd‐based sensitizers for eco‐friendly applications.     

The fabrication of TiO<Subscript>2</Subscript> nanoparticle/ZnO nanowire arrays bi-filmed photoanode and their effect on dye-sensitized solar cells

Porous TiO₂ nanoparticles coated on ZnO nanowire arrays (TiO₂ NP/ZnO NW) as photoanode for dye-sensitized solar cell (DSSC) has been fabricated and investigated to improve the power conversion efficiency. The TiO₂ NP/ZnO NW photoanode consists of single crystalline ZnO NWs synthesized via hydrothermal method and porous TiO₂ NP film covered on the surface of ZnO NW arrays by screen printing technique. The effect of TiO₂ NPs thickness of the bi-filmed photoanode on the cell performance has been investigated, and TiO₂ NP/ZnO NW DSSC with NP thickness of ~5 μm exhibits the best efficiency of 4.68%, higher than 1.16% of ZnO NW DSSC and 3.18% of TiO₂ NPs DSSC, prepared and tested under identical conditions. The efficiency increase is attributed to the enlarged photocurrent, due to the greatly enhanced surface area for dye absorption and light harvesting efficiency resulted from TiO₂ NPs, and improved open-circuit voltage, due to reduced electron recombination by providing direct conduction pathway along ZnO NWs.     

Unexpected optical response of single ZnO nanowires probed using controllable electrical contacts

Relying on combined electron-beam lithography and lift-off methods Au/Ti bilayer electrical contacts were attached to individual ZnO nanowires (NWs) that were grown by a vapor phase deposition method. Reliable Schottky-type as well as ohmic contacts were obtained depending on whether or not an ion milling process was used. The response of the ZnO NWs to ultraviolet light was found to be sensitive to the type of contacts. The intrinsic electronic properties of the ZnO NWs were studied in a field-effect transistor configuration. The transfer characteristics, including gate threshold voltage, hysteresis and operational mode, were demonstrated to unexpectedly respond to visible light. The origin of this effect could be accounted for by the presence of point defects in the ZnO NWs.     

SnO2 quantum dots and quantum wires: controllable synthesis, self-assembled 2D architectures, and gas-sensing properties

SnO2 quantum dots (QDs) and ultrathin nanowires (NWs) with diameters of approximately 0.5-2.5 and approximately 1.5-4.5 nm, respectively, were controllably synthesized in a simple solution system. They are supposed to be ideal models for studying the continuous evolution of the quantum-confinement effect in SnO2 1D --> 0D systems. The observed transition from strong to weak quantum confinement in SnO2 QDs and ultrathin NWs is interpreted through the use of the Brus effective-mass approximation and the Nosaka finite-depth well model. Photoluminescence properties that were coinfluenced by size effects, defects (oxygen vacancies), and surface capping are discussed in detail. With the SnO2 QDs as building blocks, various 2D porous structures with ordered hexagonal, distorted hexagonal, and square patterns were prepared on silicon-wafer surfaces and exhibited optical features of 2D photonic crystals and enhanced gas sensitivity.     

氧化锌纳米棒微结构光电极的制备

通过两步法,即首先热分解醋酸锌制备氧化锌晶种层,在晶种的诱导下,再采用低温水热法在氟掺杂的SnO₂导电玻璃(fluorine-doped tin oxide, FTO)基底导电面上成功制备出高取向性的氧化锌纳米棒阵列光电极。系统研究了前驱液浓度、溶液pH值、反应时间等实验条件对光电极微结构的影响。实验结果表明在一定变化范围内,随着前驱液浓度和溶液pH值的增大,纳米棒的直径增大;随着反应时间的延长,纳米棒的长度增长。将氧化锌纳米棒阵列薄膜制作成染料敏化太阳电池(dye-sensitized solar cell, DSSC)的光电极,并对电池的I-V特性进行了表征。     

Enhanced visible-light-driven photocatalytic activities of 0D/1D heterojunction carbon quantum dot modified CdS nanowires

Zero-dimensional carbon dots (0D C-dots) and one-dimensional sulfide cadmium nanowires (1D CdS NWs) were prepared by microwave and solvothermal methods, respectively. A series of heterogeneous photocatalysts that consisted of 1D CdS NWs that were modified with 0D C-dots (C-dots/CdS NWs) were synthesized using chemical deposition methods. The mass fraction of C-dots to CdS NWs in these photocatalysts was varied. The photocatalysts were characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and ultraviolet-visible spectroscopy. Their photocatalytic performance for the spitting of water and the degradation of rhodamine B (RhB) under visible light irradiation were investigated. The photocatalytic performance of the C-dots/CdS NWs was enhanced when compared with that of the pure CdS NWs, with the 0.4% C-dots/CdS NWs exhibiting the highest photocatalytic activity for the splitting of water and the degradation of RhB. The enhanced photocatalytic activity was attributed to a higher carrier density because of the heterojunction between the C-dots and CdS NWs. This heterojunction improved the electronic transmission capacity and promoted efficient separation of photogenerated electrons and holes.