EuS/Ta异质结的极大磁电阻效应

在铁磁/超导异质结中,铁磁体的交换场通过近邻效应将导致超导体准粒子态密度的塞曼劈裂.基于该效应,在外磁场不强的情况下,通过外加磁场可以有效地调节铁磁/超导界面处的交换作用,从而实现超导体在正常态和超导态之间转换,产生极大磁电阻.本文利用脉冲激光沉积方法制备了EuS/Ta异质结并研究了其电磁特性.Ta在3.6 K以下为超...     

Specific features of the Hall effect in Cr/Co bilayer films

The Hall effect and magnetoresistance in Cr(50 Å)/Co(200 Å) bilayer films prepared by ion sputtering on a silicon substrate are investigated at room temperature. The planar Hall effect revealed in the bilayer films differs from the planar Hall effect observed usually in that it is symmetric with respect to the sign of the change in the rotation angle of the magnetic moment in the film plane. Under conditions where the symmetric planar Hall effect is realized, the change in the Hall resistance is more than 10% and exceeds the anisotropic magnetoresistance by two orders of magnitude. The hysteresis loops are measured at different orientations of magnetic fields. The planar Hall effect is studied in a weak longitudinal magnetic field. The results obtained demonstrate that the symmetric planar Hall effect is associated with the multidomain structure of the cobalt film in Cr/Co bilayer composites.     

Correlation between reentrant spin glass behavior and the magnetic order-disorder transition of the martensite phase in Ni-Co-Mn-Sb Heusler alloys

We have performed ac susceptibility and dc magnetization measurements in Ni(50-x)Co(x)Mn(38)Sb(12) Heusler alloys. From the ac susceptibility measurements, the existence of reentrant spin glass (RSG) state is observed for x=0-5. It is found that the signature of RSG behavior diminishes with increase in x. This behavior is in contrast to the fact that the exchange bias field increases with x, which reveals that the origins of RSG and exchange bias are different in the present system. It is found that the system enters a frustrated ferromagnetic state just below the Curie temperature of the martensite phase (T(M)(C)) and then the RSG state at low temperature. The strength of the RSG state is critically dependent on the sharpness of the magnetic transition at (T(M)(C)). This proposition is further supported by the thermo-remanent magnetization and low field thermomagnetic measurements.     

Interface biquadratic coupling and magnon scattering in exchange-biased ferromagnetic thin films grown on epitaxial FeF2

The magnetic anisotropy of ferromagnetic (FM) Ni, Co, and Fe polycrystalline thin films grown on antiferromagnetic (AF) FeF(2)(110) epitaxial layers was studied, as a function of temperature, using ferromagnetic resonance. In addition to an in-plane anisotropy in the FM induced by fluctuations in the AF short-range order, a perpendicular (biquadratic) magnetic anisotropy, with an out-of-plane component, was found which increased with decreasing temperature above the AF Neél temperature (T(N) = 78.4 K). This is a surprising result given that the AF's uniaxial anisotropy axis was in the plane of the sample, but is consistent with prior experimental and theoretical work. The resonance linewidth had a strong dependence on the direction of the external magnetic field with respect to in-plane FeF(2) crystallographic directions, consistent with interface magnon scattering due to defect-induced demagnetizing fields. Below T(N), the exchange bias field H(E) measured via FMR for the Ni sample was in good agreement with H(E) determined from magnetization measurements if the perpendicular out-of-plane anisotropy was taken into account. A low field resonance line normally observed at H ≈ 0, associated with domain formation during magnetization in ferromagnets, coincided with the exchange bias field for T < T(N), indicating domain formation with the in-plane FM magnetization perpendicular to the AF easy axis. Thus, biquadratic FM-AF coupling is important at temperatures below and above T(N).     

Magnetization reversal in perpendicular exchange-biased multilayers

Co/Pt multilayers with perpendicular magnetic anisotropy exhibit an exchange bias when covered with an IrMn layer. The exchange bias field, which is about 7 mT for 3 Co/Pt bilayer repetitions and a Co layer thickness of 5 Å, can be increased up to 16.5 mT by the insertion of a thin Pt layer at the Co/IrMn interface. The interfacial magnetic anisotropy of the Co/IrMn interface (KSCo/IrMn =-0.09 mJ/m2) favours in-plane magnetization and tends to tilt the Co spins away from the film normal. Dynamical measurements of the magnetization reversal process reveal that both thermally activated spin reversal in the IrMn layer and domain wall nucleation in the Co/Pt multilayer influence the interfacial spin structure and therefore the strength of the perpendicular exchange bias field.     

Piezo‐voltage control of magnetization orientation in a ferromagnetic semiconductor

The possibility to control magnetic properties via electrical fields is investigated in a piezoelectric actuator/ferromagnetic semiconductor thin film hybrid structure. Using anisotropic magnetoresistance techniques, the magnetic anisotropy and the magnetization orientation within the plane of the ferromagnetic film are measured quantitatively. The experiments reveal that the application of an electrical field to the piezoelectric actuator allows to continuously and reversibly rotate the magnetization orientation in the ferromagnet by about 70°. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Perpendicular exchange bias of Co/Pt multilayers

Exchange bias measurements of ferromagnetic/antiferromagnetic (F/AF) bilayers are typically performed with the magnetization of the F layer parallel to the AF interface. We describe measurements of Co/Pt multilayers with out-of-plane magnetic easy axis that are exchange biased with CoO. Field-cooling experiments with the applied field perpendicular and parallel to the sample plane exhibit loop shifts and enhanced coercivities. Modeling and comparison to biasing of samples with planar easy axis suggests such measurements provide a way to probe the spin projections at F/AF interfaces.     

Exchange bias effects in ferromagnetic wires

We have investigated the exchange bias effect in micron-sized ferromagnetic wires made from Co and Ni₈₀Fe₂₀ films. The wires were fabricated using optical lithography, metallization by sputtering and lift-off technique. Magnetotransport measurements were performed at temperatures ranging from 3 to 300 K. We observed marked changes in the magnetoresistance (MR) properties as the temperature is varied. At 300 K, the field at which the sharp peak occurs corresponding to the magnetization reversal of the Co wires is 167 Oe and is symmetrical about the origin. As the temperature was decreased to 3 K, we observed a shift in the peak positions of the MR characteristics for both the forward and reverse field sweeps corresponding to a loop shift of 582 Oe in the field axis. The asymmetric shift in the MR loops at low temperatures clearly indicates the exchange bias between ferromagnetic (Co) and antiferromagnetic parts (Co-oxide at the surfaces) from natural oxidation. Ni₈₀Fe₂₀ wires of the same geometry showed similar effect with a low exchange bias field. The onset of exchange biasing effect is found to be 70 and 15 K for the Co and Ni₈₀Fe₂₀ wires, respectively. A striking effect is the existence of exchange biasing effect from the sidewalls of the wires even when the wires were capped with Au film.     

Co-Ni/FeMn双层膜中磁化强度对交换偏置的影响

固定CoNiFeMn双层膜中反铁磁层的厚度,改变CoNi铁磁层的成分来调节磁化强度,从而研究铁磁层的饱和磁化强度对CoNiFeMn双层膜中交换偏置的影响.研究表明,CoNiFeMn界面的交换耦合能U不是一个常量,而是随(MFM)12的增加而线性增加.其原因是铁磁层磁矩通过界面相互作用在反铁磁层中形成的局域交换磁场,在磁场冷却时影响反铁磁层的自旋结构或磁畴结构及双层膜中的交换偏置 关键词： 交换偏置 磁化强度     

Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlO_(x)/Pt structures

We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a nonmagnetic Pt counterelectrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength, bias voltage, and temperature. For ferromagnetic electrodes terminated by two monolayers of Pt we observe order(s) of magnitude enhancement of the TAMR and a strong dependence on field, temperature and bias. The discussion of experiments is based on relativistic ab initio calculations of magnetization orientation dependent densities of states of Co and Co/Pt model systems.     

铁磁/反铁磁双层膜中的磁锻炼效应

采用Monte Carlo 方法,研究铁磁/反铁磁双层膜中的磁锻炼效应.结果表明,反铁磁层中冷场诱发的界面净磁化(钉扎效应)的磁弛豫可导致系统中的交换偏置场的磁锻炼效应.进一步研究表明,反铁磁层中掺杂可调控交换偏置场的磁锻炼效应,原因在于反铁磁层中掺杂能有效地改变冷场诱发的净磁化的磁弛豫过程.     

All-optical probe of magnetization dynamics in exchange biased bilayers on the picosecond timescale

All-optical control of the magnetization of polycrystalline exchange bias bilayer systems is achieved using short picosecond laser pulses. Due to the photoexcitation, the spin temperature across the interface between the ferromagnetic and antiferromagnetic layer is elevated, resulting in a collapse of the interfacial exchange coupling. Thus, within the first 10 ps, a fast reduction of both the exchange bias field and the coercive field is observed for three different exchange bias systems comprising both different ferromagnets and antiferromagnets. The fast thermal unpinning is followed by a slower heat diffusion dominated relaxation process, which strongly depends on the thermal conductivity of the used buffer layers and substrates. The fast optical unpinning can be understood in terms of an internal anisotropy pulse field capable of triggering ultrafast precessional magnetization dynamics of the ferromagnetic layer, which makes heat-assisted coherent magnetization rotation feasible.     

Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks

We employ antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift, which correlates with the observation of fully rotating antiferromagnetic moments inside the IrMn film. The onset of exchange bias at lower temperatures is linked to a partial rotation between distinct metastable states and pinning of the IrMn antiferromagnetic moments in these states. The observation complements common pictures of exchange bias and reveals an electrically measurable memory effect in an antiferromagnet.     

Exchange bias dependence on interface spin alignment in a Ni80Fe20/(Ni,Fe)O thin film

A Ni80Fe20/(Ni,Fe)O thin film exhibits a positive exchange bias when cooled in a zero field and a negative exchange bias when field cooled. With transmission electron microscopy and electron energy loss spectrometry, the composition and magnetic structure has been ascertained and a distribution of magnetization easy axes about the interface extrapolated. The results indicate that the positive exchange bias is from antiferromagnetic interface moments perpendicular to their ferromagnetic counterparts. With field cooling the alignment is put into a parallel configuration resulting in a negative exchange bias.     

Exchange bias in bulk layered hydroxylammonium fluorocobaltate (NH?OH)?CoF?

The magnetic properties of layered hydroxylammonium fluorocobaltate (NH(3)OH)(2)CoF(4) were investigated by measuring its dc magnetic susceptibility in zero-field-cooled (ZFC) and field-cooled (FC) regimes, its frequency dependent ac susceptibility, its isothermal magnetization curves after ZFC and FC regimes, and its heat capacity. Effects of pressure and magnetic field on magnetic phase transitions were studied by susceptibility and heat capacity measurements, respectively. The system undergoes a magnetic phase transition from a paramagnetic state to a canted antiferromagnetic state exhibiting a weak ferromagnetic behavior at T(C) = 46.5 K and an antiferromagnetic transition at T(N) = 2.9 K. The most spectacular manifestation of the complex magnetic behavior in this system is a shift of the isothermal magnetization hysteresis loop in a temperature range below 20 K after the FC regime-an exchange bias phenomenon. We investigated the exchange bias as a function of the magnetic field during cooling and as a function of temperature. The observed exchange bias was attributed to the large exchange anisotropy which exists due to the quasi-2D structure of the layered (NH(3)OH)(2)CoF(4) material.     

Field-and Current-Driven Magnetization Reversal and Dynamic Properties of CoFeB-MgO-Based Perpendicular Magnetic Tunnel Junctions

We report a perpendicular magnetic tunnel junction(p MTJ) cell with a tunnel magnetoresistance(TMR) ratio of nearly 200% at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL) and a synthetic antiferromagnetic(SAF) multilayer [Pt/Co]/Ru/[Pt/Co]/Ta/Co Fe B as the reference layer(RL). The field-driven magnetization switching measurements show that the p MTJs exhibit an anomalous TMR hysteresis loop. The spin-polarized layer Co Fe B of SAF-RL has a lower critical switching field than...     

Tunneling Anisotropic Magnetoresistance in L1_0-MnGa Based Antiferromagnetic Perpendicular Tunnel Junction

We report on the tunneling anisotropic magnetoresistance in antiferromagnetic perpendicular tunnel junction consisting of L1_0-MnGa/FeMn/AlO_x/Pt grown on GaAs(001) substrates by molecular-beam epitaxy. The temperature-dependent perpendicular exchange bias effect reveals an exchange coupling between ferromagnetic L1_0-MnGa and antiferromagnetic FeMn. The rotation of antiferromagnetic spins in FeMn can be driven by perpendicularly magnetized L1_0-MnGa due to the exchange-spring effect at the interface and leads to roomtemperature tunneling anisotropic magnetoresistance ratio of 0.86%. We also find that the tunneling anisotropic magnetoresistance strongly depends on temperature and angle. These results have broadened the material selection range for high performance antiferromagnetic spintronic devices.     

Magnetoresistance and magnetization studies through a Cu interlayer in spin valves of NiFe/Cu/NiFe/FeMn

The influence of the Cu layer thickness on the magnetic and magnetotransport properties has been investigated in Ta/NiFe/Cu/NiFe/FeMn spin valves. The magnetization and magnetoresistance measurements were carried out for magnetic field applied along the easy-axis direction. A phenomenological model, which assumes formation of a planar domain wall at the anti-ferromagnetic side of the interfaces as well as bilinear coupling between the ferromagnetic layers, was used to derive the anisotropy characteristics and orientation of each NiFe layer magnetization. The anisotropy and spin valve magnetoresistance were simulated numerically and compared with the experiment. It was found that the anisotropy magnetoresistance is negligible and that there is a poor agreement for the spin-valve one, which was attributed to the model (valid for ferromagnetic layers in single-domain state only) used for its calculation. It was found that the increase of the Cu layer thickness provokes a decrease of the interdiffusion between the NiFe and FeMn layers, and, as consequence, changes of the uniaxial anisotropy of the pinned NiFe layer, of the exchange interaction between the pinned NiFe layer and the FeMn ones, as well as of the exchange-bias field of the pinned NiFe layer.     

外场作用下铁电/铁磁双层膜的极化磁化性质

建立了铁电/铁磁双层膜模型,铁电层的电矩用连续标量描述,而铁磁层的自旋应用经典矢量描述.利用蒙特卡罗方法模拟了体系的热力学性质和极化、磁化行为.给出了零场下体系的内能、比热、极化和磁化随温度变化的关系,并分别研究了体系在外磁场和外电场下的极化和磁化行为.模拟结果表明,双层膜体系的内能、比热、极化和磁化性质因层间耦合系数的不同而明显不同,当界面耦合较弱时,双层膜表现出各自的热力学性质,当层间耦合增强到一定程度时,双层膜耦合为一个整体,表现出统一的热力学性质.该双层膜在外场中形成电滞回线和磁滞回线,并表现出偏置特性,界面耦合强度和温度影响滞后回线和偏置现象.