不同能量下核束缚能的影响

在不同能量下， 利用核束缚能对虚光子四动量的平方项进行修正， 分别计算了Sn核碰撞中核束缚能对反应截面中湮灭项和康普顿散射项及K因子的影响。 结果表明， 核束缚能在小x区域对反应截面中湮灭项和康普顿散射项及K因子的影响明显， 并且能量越低这种影响越显著， 随着x2增大影响逐渐消失。 We made a revision of square of virtual photon four momentum by means of using nuclear bin ding energy formula in different energy， and we also made an accurate calculation for the effect of nuclear binding energy on K factor and Compton term and annihilate term in the Drell Yan process of the Sn Sn collision. The outcome indicates that the effect of nuclear binding energy on the annihilate term and the Compton term is marked in little x region and the effect will become more obvious with decrease of the energy and come to disappear with increase of the x.     

用π云孤粒子袋模型计算强子的静态物理性质

本文研究在g_s零阶近似孤粒子袋模型.考虑了夸克间的单胶子交换相互作用,则构成π云孤粒子袋模型.并导出强子各种静态物理性质的解析表达式,给出与实验值基本相符的计算结果.     

包含键环境修正的硅氢紧束缚势模型

在已有的硅势模型基础上,引进氢原子,计及Si-H键环境的影响,构造出新的硅氢紧束缚势模型.通过测试计算,这一新的硅氢势模型显示出较好的传递性,可适宜于研究复杂的硅氢体系. 关键词： 紧束缚势模型 半导体 缺陷     

能带论教学拓展：紧束缚模型的离散形式及应用

紧束缚模型的离散形式具有形式简洁且抓住物理本质等特点,成为科学研究工作中的重要表达形式.本文主要介绍紧束缚模型离散形式的推导过程,并以固体物理课程中两个常见模型为例进行了相应结果展示.本文的讨论一方面可以为固体物理课堂教学提供进一步研讨的素材,另一方面还可帮助学生顺利从课本学习过渡到前沿研究.     

等效质量模型中的重子质量谱

在等效质量模型框架下,考虑线性禁闭和一阶微扰相互作用的贡献并通过拟合$ \mathrm{p} $、$ \mathrm{n}$、$\Lambda$和$ \Delta $的质量来得到模型参数。发现,等效质量模型能够较好地给出符合实验的重子质量谱。而禁闭强度$D$、强耦合常数$\alpha_{\rm{s}}$以及夸克质量因子$f$与微扰强度$C$之间都存在关联,并能够很好地用解析公式逼近。除此之外,单胶子交换相互作用的色磁部分在重子质量谱中起着重要作用,从而使自旋$J=1/2$和3/2的重子之间的质量差最高达到300 MeV。为了更好地描述超子质量,对于包含奇异夸克的一对夸克间的相互作用我们进一步采用不同的强耦合常数,其具体的模型参数通过拟合$ \Sigma $和$ \Xi $的质量得到。基于本工作得到的等效质量模型参数组,能够更好地描述$ \mathrm{ud}$夸克物质团、奇异子以及致密星。     

半导体束缚激子基态能的变尺度法

提出了计算体系基态能的变尺度法，用该算法计算了电子和空穴有效质 量比值不同时，离子化施主束缚激子（D+，X）的基态能. 在求解体系基态能上与传统的变分法相比有很大的优势，尤其适合复杂体系基态能的计算. 关键词： 束缚激子 氦原子 基态能 变尺度方法     

GaAs基InAs量子点中类氢杂质的束缚能

在有效质量近似下,采用微扰法研究了InAs/GaAs量子点内类氢杂质基态及低激发态的束缚能.受限势采用抛物形势,在二维平面极坐标下,精确地求解了电子的薛定谔方程.数值计算结果表明,类氢杂质基态及低激发态的束缚能敏感地依赖于抛物形势的角频率,受类氢杂质的影响,谱线发生蓝移.这一结果对设计和制备量子点器件是有价值的.     

闪锌矿GaN量子点中类氢杂质态的束缚能

在有效质量近似下,用变分法研究了闪锌矿GaN/AlxGa1-xN单量子点中的类氢杂质态。结果表明量子点中的杂质位置和量子点结构参数（量子点高度H、半径R及Al含量x）对施主束缚能有很大的影响。当杂质位于量子点中心时,施主束缚能 有最大值。此外,施主束缚能 随着量子点高度H（半径 ）的增大而减小,随着量子点中Al含量x的增大而增大。     

对称GaAs/Al0.3Ga0.7As双量子阱中激子的束缚能

在有效质量近似下采用简单的尝试波函数变分地计算了对称GaAs/Al0.3Ga0.7As双量子阱中激子体系束缚能,研究了体系束缚能随阱宽和垒宽的变化情况.发现双量子阱中激子体系束缚能随阱宽变化同单量子阱情况类似,但束缚能的峰值出现在阱宽为10(A)左右,峰值位置小于单阱的情况;束缚能随垒宽的增加有一极小值,这与波函数向垒中的渗透有关.     

CdTe和HgTe电子结构的紧束缚模型计算

基于局域密度近似(LDA或GGA)的密度泛函理论计算往往低估体系的禁带宽度,而这一低估对窄带隙半导体尤为严重.尽管基于混合泛函的密度泛函理论能有效地修正这一误差,但是由于计算量较大仍无法用于计算较大体系.本文发展了一组能够比较准确描述CdTe和HgTe晶体电子结构的紧束缚参数.将基于混合泛函的密度泛函计算结果作为输入,我们构建了正交的sp~3s~*基组下的紧束缚模型.此模型能够比较准确地描述能带结构在费米面附近4 eV范围内的色散关系.利用当前模型计算了CdTe和HgTe非晶的电子态密度,计算结果与他人的理论计算和实验值符合较好.     

Universal,Solution of Oppenheimer-Volkov Equatiops for Strange Stellar System Based on the MIT Bag Model

The universal solution of Oppenheimer-Volkov equations with strange quark matter equation of state of the MIT bag model is calculated in a reduced form which is independent of the MIT constant B. The lower limit of the observational pulse period of pulsars (0.69 ma) is predicted by the MIT bag constant B=(146 MeV)⁴ which ia fitted to the hadronic spectrum, while the observed lower limit of pulse period of pulaara (1.56 ms) gives an astrophysical restriction on the lower limit of the MIT bag constant as B>(97 MeV)⁴.     

连续谱X射线在ICT中的能谱硬化修正模型

X射线ICT中,由于连续谱X射线源在穿过物质时,能量较低的射线优先被吸收,也即较高能量的X射线的衰减系数比较低能量的X射线的衰减系数小,射线随透射厚度增大,变得更易穿透,也就是发生了能谱硬化现象。如不加修正,必引起赝像。文中对能谱硬化现象进行实验和理论上的分析,探讨了在均匀物质中, X射线的衰减系数与透射厚度的关系, 提出新的能谱硬化修正方法和严谨精确的能谱硬化修正模型。     

X射线TICT在复合材料工件检测中的能谱硬化修正模型

X射线TICT中,由于X射线能谱具有多色性, X射线在透射物质时,能量较低的射线优先被吸收,也即较高能量的X射线的衰减系数比较低能量的X射线的衰减系数小,射线随透射厚度增大,变得更易穿透,也就是发生了能谱硬化现象。如不加修正,必引起赝像。文中对能谱硬化现象进行了分析,探讨了X射线TICT在复合材料工件检测中, X射线的衰减系数与透射厚度的关系, 并根据Beer定律和X射线与复合材料作用的特点, 推导出X射线TICT在复合材料工件检测中, 严谨精确的能谱硬化修正模型及其修正方法。对修正后的衰减系数再做卷积反投影重构, 即可有效消除能谱硬化造成的影响。     

Derivative Form of Off-axis Aberration Correction Surface and Its Application in Solar Energy Concentration

By using the derivative method, we obtained the same result with that of the previous work of Chen et al. in 2006. Different from the integral form, the derivative form of the surface expression published in this paper is derived from differential equation and based on the theory of non-imaging focusing heliostat proposed by Chen et al. in 2001. The comparison of the derivative form of fixed aberration correction surface has been made with that of integral form surface as well as that of spherical surface in concentrating the solar ray.     

The Binding Energy, Spin－Excitation Gap, and Charged Gap in the Boson－Fermion Model

In this paper, by applying a simplified version of Lieb‘s spin-reflection-positivity method, which was recently developed by one of us [G.S. Tian and J.G. Wang, J. Phys. A: Math. Gen. 35 (2002) 941], we investigate some general properties of the boeon-fermion Hamiltonlan, which has been widely used as a phenomenological model to describe the real-space pairing of electrons. On a mathematically rigorous basis, we prove that for either negative or positive couping V, which represents the spontaneous decay and recombination process between boson and fermion in the model, the pairing energy of electrons is nonzero. Furthermore, we also show that the spin-excitation gap of the boson-fermion Hamiltonian is always larger than its charged gap, as predicted by the pre-palred electron theory.     

The Binding Energy, Spin-Excitation Gap, and Charged Gap in the Boson-Fermion Model

In this paper, by applying a simplified version of Lieb ‘s spin-refleetion-positivity method, which was recentlydeveloped by one of us [G.S. Tian and J.G. Wang, J. Phys. A: Math. Gen. 35 (2002) 941], we investigate some generalproperties of the boson-fermion Hamiltonian, which has been widely used as a phenomenological model to describe thereal-space pairing of electrons. On a mathematically rigorous basis, we prove that for either negative or positive couplingV, which represents the spontaneous decay and recombination process between boson and fermion in the model, thepairing energy of electrons is nonzero. Furthermore, we also show that the spin-excitation gap of the boson-fermionHamiltonian is always larger than its charged gap, as predicted by the pre-paired electron theory.     

Calculation of the Binding Energy in the One-Dimensional Hubbard Model by the VMC Method

Using variational Monte-Carlo method and choosing an antiferromagnetic trial wave function,we have calculated the binding energies just off half-filling in one-dimensional Hubbard chains. We found the binding for the lattice length N being less than 40 in the degenerate case, but no binding at aU in the non-degenerate case. However, with lattice length increasing gradually, difference between the two cases becomes smaller and smaller. Finally, there is no binding at all no matter whether or not the chains have a degeneracy at the Fermi level in the non-interacting (U=0) limit. It may bean in,dication of the independence of the final calculation results on the boundary conajtions for the large enough system or in thermodynamic limit.     

中能Abrasion-Ablation模型的核内核子密度分布修正

将具体的核内核子(包括中子、质子)密度分布引入到中能Abrasion-Ablation模型中,用修正后的模型计算了30MeV/u ⁴⁰Ar+^natAg反应中的弹核碎裂过程.结果表明,在非常周边的碰撞中,修正后的模型计算的碎片截面与修正前的计算相比有明显的差别,反映了核密度边缘弥散的影响.与实验结果的比较验证了中能弹核碎裂碎片能量相对于束流能量的降低是由摩擦作用引起的.