Interpretation of the Vapor Pressure Isotope Effect of BF3

The available experimental data on the vapor pressure isotope effect (VPIE) of BF₃ are interpreted within the framework of the statistical theory of isotope effects in condensed systems. It is shown that the temperature dependence of the VPIE of ¹⁰BF₃/¹¹BF₃ observed by Rayleigh distillation experiments cannot be rationalized at all, while the curie obtained by vapor pressure difference measurements seems to be too steep below the boiling point.     

用高压显微光谱系统研究非晶态As2S3的光学折射率随流体静压力变化的规律

用金刚石对顶砧高压显微光谱系统在高达66kbar的流体静压力和光谱波段为400—900nm范围内,用透射光干涉谱法测量了非晶态As₂S₃(a-As₂S₃)的光学折射率n与压力p以及波长λ的变化关系。a-As₂S₃的折射率对压力极为敏感,在波长为650nm,压力从1bar变到66kbar时,它增加35％。在计算机上用最小二乘法对实验点进行拟合的结果得到:对某一波长λ来说,遵循n(P)=n(0)+Ap+Bp²的非线性关系。其中n(p)和n(0)是p压和常压下的折射率,A和B是与波长有关的系数,文中给出了A和B的具体参数。这个关系与Weinstein和Galkiewicz等人公布的n(p)和p之间遵循线性关系不同。 关键词：     

Pressure and temperature-dependent raman study of ZnWO4

Abstract

The Raman spectra of monoclinic ZnWO₄ (c⁴ _2h-space group) are reported over wide ranges of pressure (0-24GPa) and temperature (13-970 K). All 18 Raman active pho-nons are observed throughout these ranges. Combining the pressure and temperature Raman data, an identification scheme is suggested which makes possible to distinguish the internal modes (vibrations in the octahedral WO₆ units) from the external ones (pure lattice modes). All phonons harden with pressure, thus showing normal positive dω/dP slopes, and soften with temperature in the region 250 - 970 K (normal negative dω/dT slopes). However, two phonons show a change of slope sign below 300 K, resulting in small positive slopes at low temperatures. Since the pressure dependence of these two phonons is normal and linear, it is concluded that their anomalous, non-linear dependence with temperature is due to anharmonic (temperature induced) phonon interactions rather that volume expansion. It is found that ZnWO₄ remains stable throughout the pressure and temperature ranges.     

Spectral dependence of polarization of cesium atoms during pumping by a narrowband semiconductor laser

It is found in an experiment with narrowband laser pumping of Cs atoms by light of the D ₂-line that the spectral dependence of the polarization of atoms significantly differs from the spectral dependence of the light absorption by nonpolarized atoms. The difference lies in a partial resolution of the hyperfine structure of the excited 6² P _3/2 state, which remains unresolved in the case of nonpolarized atoms. The shape of the spectral dependence of the atom polarization observed upon pumping with circularly polarized light differs from that in the case of the linear polarized pumping and depends strongly on the buffer gas pressure, which allows one to obtain experimental information on collisional relaxation in the excited state. Calculation for a cell with antirelaxation coating and a cell with helium (6-Torr pressure) gives spectral dependences that are qualitatively consistent with experiment.     

Quenching of SO2 phosphorescence by a magnetic field

Phosphorescence excitation spectra of the ã³B₁← [Xtilde]¹A₁ transition of SO₂ were measured in the absence and presence of a magnetic field (B = 0?44 T², P(SO₂) = 0?7 Torr). The absorption and phosphorescence excitation spectra of the ã³B₁← [Xtilde]¹A₁ transition of SO₂ measured in the absence of a magnetic field show that the relative intensity of the bands of the phosphorescence excitation spectrum is smaller than the relative intensity of the corresponding bands of the absorption spectrum beginning with the (0, 2, 0) band. In the presence of a magnetic field, the intensity of the phosphorescence excitation band falls, for ν_exc> 26400 cm^-1. Under the direct excitation of the ã³B₁← [Xtilde]¹A₁ transition, the dependence of the magnetic quenching of the SO₂ phosphorescence on the excitation frequency (ν_exc) was studied at P(SO₂) = 0?7 Torr and B = 0?44 T. The dependence of the magnetic field effect on ν_excshows that only the vibrationally excited levels of the ã³B₁ state are sensitive to an external magnetic field. The magnetic field strength and the pressure dependence of the magnetic field effects were studied under indirect excitation of the ã³B₁← [Xtilde]¹A₁ transition at λ_exc = 308 nm. The magnetic field and the pressure dependence were investigated for pure SO₂ and for SO₂ + RH (RH n-C₅H₁₂) mixtures. It was found that the magnetic field effect was saturated at B ? 0?25 T. The saturation value (Gr = l(0?3 T)/l(0)) increases with increasing gas pressure. The magnetic field, the pressure and the excess vibrational energy (ν_excess) dependence of the magnetic quenching of SO2 phosphorescence show that the data observed can be explained by an indirect mechanism within the framework of a low level density approximation.     

Pressure dependence of the electric field gradient in Sb and Sb1−x M x (M=ln,Zn, Ge,Pb, Cd,Sn) at the site of111Cd

Using the¹¹¹Cd-TDPAC (time differential perturbated angular correlation) method, the pressure dependence of the electric field gradient (EFG) in Sb and Sb_1–x M _x (M=ln, Zn, Ge, Pb, Cd, Sn) was investigated. The application of a phenomenological ansatz for the parametrisation of the pressure and temperature dependence of the EFG made it possible to combine temperature data gained in former studies [1], [2] with the pressure dependent data presented in this paper. The resulting pressure dependence of –2±0.2 MHz/kbar is shown to be independent of concentration and element of admixture. Results for the volume and explicit temperature dependence agree with existing information on the mixed system Sb_1–x M _x (M=ln, Zn, Ge, Pb, Cd, Sn); the investigation of the EFG in Sb_1–x–y M _x Pb _y showed that the resulting EFG may be interpreted as the weighted sum of the individual contributions of the two metals.This paper is dedicated to Prof. Dr. W. Kreische on the occasion of his 60th aniversary on 02.02.1995     

High pressure optical study of KTbP2Se6

We have observed a pressure induced phase transition in KTbP₂Se₆ at about 9.2 GPa which was accompanied by a discontinuous jump of the absorption edge of about 0.5 eV into the red. We have proposed that the high pressure phase is due to charge transfer from the selenium to the phosphorous accompanied by the formation of a Se-Se bond. In order to exclude a model which involves a 4f-5d charge transfer in Tb, leading to the intervalence charge transfer from Tb³⁺P⁴⁺-Tb⁴⁺P³⁺,we have measured the pressure dependence of the luminescence of the crystal field split levels of the Tb-ion. A comparison of the pressure dependence of the luminescence spectra of KTb(MoO₄)₂ and KTbP₂Se₆ shows that such a charge transfer does not occur in KTbP₂Se₆.     

Charge transport and pressure dependence of Tc of single crystal,ferromagnetic EuB6

We present Hall Effect and resistivity data which demonstrate that EuB₆ is a degenerate semiconductor transforming into a metal or semimetal below the ferromagnetic ordering temperature, T_c = 13.7K. We also report an anomalously large, positive pressure dependence of T_c, (1/T_c)(ΔT_c/ΔP) ? 4 × 10^?2 kbar^?1.     

流体静压力对锗隧道二极管伏安特性的影响

本文报导了在流体静压力18000kg/cm²的范围内,锗隧道二极管伏安特性随压力变化的实验结果。测量了十六只锗隧道二极管的峯值电流I_P、峯值电压V_P、谷值电流I_V、谷值电压V_V、指数过剩电流I_X和反向隧道电流等参数与流体静压力的关系。结果表明:峯值电流I_P相对于压力的半对数作图为斜率不同的二段下降直线,在5000—9000kg/cm²范围内有转折点;峯值电压随压力改变较小;在误差范围内谷值电压不随压力而改变。对于大部分被测管子,谷值电流与压力的关系类似于峯值电流与压力的关系;随着压力的增加,指数过剩电流区向高偏压方向移动。讨论了峯值电流及指数过剩电流随压力变化的规律和其他结果。认为转折点的存在是表明隧道跃迁机构的改变;由指数过剩电流区固定电流值测偏压随压力改变,求得禁带宽度的压力系数与其他方法获得的结果很好符合。     

Effect of pressure on the temperature dependence of the thermal conductivity of InSb

The dependence of the thermal conductivity of indium antimonide on temperature (in the range 300–450 K) and hydrostatic pressure (up to 0.4 GPa) has been investigated. It is shown that the phonon thermal conductivity λ_ph obeys the law T ^?n (n ≥ 1). Hydrostatic pressure affects the magnitude and temperature dependence of the thermal conductivity of InSb: with an increase in pressure, the thermal conductivity increases, while the parameter n in the dependence λ_ph ≈ T ^?n decreases.     

Determination of parameters of Cu surface mass transport on sapphire from morphological changes of beaded films caused by evaporation

s , the surface diffusion coefficient, D_s ^′, and the surface reaction rate coefficient, β_s ^′, of Cu on alumina are determined in the temperature range 1048–1198 K. Measuring simultaneously the time dependence of the effective thickness, H_eff(t), the lateral shift of the boundary, y(t) of beaded films (BF) and using vapour pressure data we concluded that the process is controlled by surface reaction at the perimeters of beads. Supposing Arrhenius-type temperature dependence for D_s ^′, β_s ^′ and λ_s the activation energies and preexponential factors have been calculated. Received: 2 October 1996/Accepted: 27 November 1996     

The pressure dependence of the Herzberg photoabsorption continuum of oxygen

The origin of pressure dependence in the dipole forbidden Herzberg continuum of oxygen is discussed in terms of the formation of oxygen dimers and the collision of free molecules. The small temperature dependence of the pressure coefficient indicates that the collisions of free molecules have the dominant influence. Consideration of the selection rules applying to the Herzberg systems and the strengths of the associated band systems leads to the conclusion that the pressure dependence results from enforced dipole transitions in the Herzberg III (A′³Δ_u−X³Σ_g^-) system.     

Pressure dependence of the isomer shift of Sn119

Using recoilless gamma resonance absorption of the 23.8 keV transition of Sn¹¹⁹ we have measured the isomer shift as a function of hydrostatic pressure up to 100 kbar. The tin isotope was introduced into the substances SnMg₂, metallic tin, Pd(12 wgt.% Sn), Sn (SO₄)₂·2H₂O, and SnAu. Except for SnMg₂, all compounds exhibit a linear relation between isomer shift and pressure, which reflects a decrease of ¦ ψ(0)¦², the probability density of the electrons at the nuclear site, with increasing pressure. This decrease is interpreted by a volume-dependent screening of the 5s electrons by the 5p electrons. The non-linear dependence of the isomer shift upon pressure in the case of SnMg₂ is interpreted in terms of the superposition of two counteracting effects, with band repopulation and electronic shielding effects prevailing in the low and high pressure branches, respectively. Measurements of the pressure dependence of both the electrical resistivity and the lattice structure of SnMg₂ lead to a picture, which resulted in a calculation of the pressure dependence of the isomer shift, which is in agreement with the experimental observations.     

Broadening and shift of lines of the ν<Subscript>2</Subscript> + ν<Subscript>3</Subscript> band of water vapor induced by helium pressure

The broadening and shift coefficients of more than 100 absorption lines of the ν₂ + ν₃ band of water vapor that are induced by the pressure of helium are measured and calculated. The broadening and shift coefficients are obtained from analysis of the room-temperature absorption spectra of an H₂O-He mixture measured with a resolution of 0.007 cm^?1 on a Fourier spectrometer in a large range of helium pressures. The specific features in the rotational dependence of the line center shifts are determined, which, in contrast to the broadening induced by other gases, are mainly positive. The calculated coefficients of the line broadening and shift of line centers are determined by a semiclassical method. An unusual dependence of the shift coefficients is explained by the rotational dependence of the intermolecular isotropic interaction potential.     

Pressure and temperature dependence of the emission in BaF2:Eu and SrF2:Eu

The 4f⁶5d¹(e)→4f⁷ emission (normal) of Eu²⁺ in SrF₂ and normal and anomalous emissions of Eu²⁺ in BaF₂ are studied as a function of pressure and temperature. Although in BaF₂ both emissions (anomalous and normal) shift with pressure in the same spectral direction (a red shift), the anomalous emission converts to the normal emission when the pressure increases to 33 kbar. Considering the dependence of BaF₂:Eu²⁺ luminescence on the pressure and temperature we have found that spectral transformation takes place due to a smooth pressure-induced level crossing at approximately the same pressure as the phase transition.     

流体静压力下快离子导体Rb4Cu16I7Cl13离子电导的研究

在流体静压力为0.5—11.6kbar,温度-80—80℃范围内,测量了Rb₄Cu₁₆I₇Cl₁₃多晶粉末“松散”样品和“致密”样品的离子电导。“松散”样品电导与压力的关系表明,在4.0—5.0kbar附近,电导存在极大值;“致密”样品电导随压力单调下降。在一定压力下,“致密”样品电导率随温度变化的趋势与常压结果相同,压力对Rb₄Cu₁₆I₇Cl_关键词：     

SrB4O7:Sm2+: an optical sensor reflecting non-hydrostatic pressure at high-temperature and/or high pressure in a diamond anvil cell

A systematic investigation on the fluorescent spectra of SrB₄O₇:Sm²⁺ was performed in detail at high-temperature up to 623?K and/or high pressure up to 23.2?GPa with different pressure-transmitting media (PTMs), respectively. Combined with experiment data of previous research, the change of the ⁷D₀–⁵F₀ line (0–0 line) full width at half maximum (FWHM) of SrB₄O₇:Sm²⁺ under different pressure environments was specifically discussed. The results indicate that the FWHM of 0–0 line is sensitive to the non-hydrostatic pressure environment in 2-propanol, and methanol and ethanol mixture (ME) PTMs at ambient temperature. The first-order and the second-order derivation of the temperature dependence of 0–0 line FWHM at ambient pressure are 1.48(±0.21)?×?10^?4?nm/K and 9.63(±0.63)?×?10^?7?nm²/K² below 623?K. The 0–0 line FWHM is also sensitive to the non-hydrostatic pressure environment in ME at high-temperature and high pressure simultaneous, the non-hydrostatic transition pressures are 9.6?GPa at 323?K, 11.0?GPa at 373?K, 14.4?GPa at 423?K, respectively. SrB₄O₇:Sm²⁺ is recommended as an optical sensor to reflect the change of pressure environment in liquid media at high-temperature and/or high pressure.     

Quantum properties of two-dimensional electron gas in the inversion layer of Hg1−xCdxTe bicyrstals

The electronic and magnetotransport properties of conduction electrons in the grain boundary interface of p-type Hg_1−xCd_xTe bicrystals are investigated. The results clearly demonstrate the existence of a two-dimensional degenerate n-type inversion layer in the vicinity of the grain boundary. Hydrostatic pressure up to 10³ MPa is used to characterize the properties of the two-dimensional electron gas in the inversion layer. At atmospheric pressure three series of quantum oscillations are revealled, indicating that tthree electric subbands are occupied. From quantum oscilations of the magnetoresistivity the characteristics parameters of the electric subbands (subband populations n_si, subband energies E_F−E_i, effective electron masses m^*_ci) and their pressure dependences are established. A strong decrease of the carrier concentration in the inversion layer and of the corresponding subband population is observed when pressure is applied A simple theoretical model based on the triangular-well approximation and taking into account the pressure dependence of the energy band structure of Hg_1−xCd_xTe is use to calculate the energy band diagram of the quantum well and the pressure dependence of the subband parameters.     

Electric and magnetic interaction in181TaTb measured with TDPAC

The temperature and pressure dependence of the combined magnetic and electric interaction of¹⁸¹Ta in Tb have been measured using the TDPAC method. At 20K the field is 27.6 T and the EFG 7.32 10¹⁷ V/cm². The antiferromagnetic phase is suppressed by the 0.5 wt% Hf and T_C is shifted to 236K. No pressure dependence is observed at 140K in contrast to that of the magnetization while at 208K we obtain dlnB/dP=–13 (2) Mbars–1 essentially due to the pressure dependence of T_C.     

High‐pressure μSR studies of ferro‐ and antiferromagnetic metals

High‐pressure μSR experiments on ferromagnetic nickel and \alpha‐iron and antiferromagnetic chromium are reported. In Ni above 260 K B_Fermi was found to be proportional to the saturation magnetization, whereas at lower temperatures it is temperature independent apart from a small anomaly below 30 K which is presumably caused by a magnetoelastic interaction. There was no evidence for an occupation of metastable sites by the μ⁺ below the Curie temperature. By contrast, in \alpha‐Fe the temperature dependence of \curpartialB_μ/\curpartialp shows a structure which might be attributed to the occupation of excited muon states at elevated temperatures. High‐pressure zero‐field experiments on Cr performed in the temperature regime between 4.5 K and 8 K revealed a pressure dependence of B_μ as large as \curpartialB_μ/\curpartialp=-(89.15\pm 0.06)\times 10^-12 T/Pa. In terms of volume dependence a very large negative Grüneisen parameter \gamma =-27 was obtained. This revised version was published online in July 2006 with corrections to the Cover Date.